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CGY41
HiRel L- and S-Band GaAs General Purpose Amplifier
• HiRel Discrete and Microwave Semiconductor
• Single- stage monolithic mircrowave IC
(MMIC- amplifier)
• Application range: 100 MHZ to 3 GHz
• Gain: 9.5 dB typ. @ 1.8 GHz
• Low noise figure: 2.7 dB typ. @ 1.8 GHz
• Bandwidth: 3 GHz typ. @ -3 dB, VSWR < 2:1*
Operating voltage range: 3 to 5.5 V
• Input and output matched to 50 Ω
• Individual currenet control with neg. gate bias
• Hermetically sealaed ceramic package micro-x
CGY41
IN (VG)
1
2,4 (VS)
OUT (VD)
3
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
CGY41 - 1=inVG 2=Vs 3=Out 4=Vs MICRO-X
(ql) Testing level: P: Professional testing
H: High Rel quality
S: Space quality
ES: ESA qualified
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CGY41
Maximum Ratings
Parameter Symbol Value Unit
Drain-voltage VD5.5 V
Drain-gate voltage VDG 9.5
Gate-voltage VG-4...0
RF input power1) PRF,in 16 dBm
Channel temperature TCH 175 °C
Storage temperature Tst
g
-55...175
Total power dissipation(TS ≤82°C)2) Ptot 440 mW
Thermal Resistance
Parameter Symbol Value Unit
Channel- soldering point2) RthChs 155 K/W
1@ VD >4.5V derating required.
2TS is measured on the source lead at the soldering point to the PCB.
Notes: Exceeding any of the max. ratings may cause permanent damage to the
device. Appropriate handling is required to protect the electrostatic sensitive MMIC
against degradation due to excess voltage or current spikes. Proper ground
connection of leads 2 and 4 (with min. inductance) is required to achieve the
guaranteed RF performance, stable operating conditions and adequate cooling.
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CGY41
Electrical Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Drain current ID40 60 80 mA
Power Gain
f = 200 MHz
f = 1800 MHz
G
9.5
8.5
10.5
9.5
12
11
dB
Gain flatness
f= 200 to 1000 MHz
f= 800 to 1800 MHz
∆G
-
-
0.4
1.1
-
2
Noise figure
f= 200 to 1000 MHz
f= 800 to 1800 MHz
F
-
-
2.5
2.7
-
4
Input return loss
f= 200 to 1000 MHz
f= 800 to 1800 MHz
RLIN
-
-
13
12
-
9.5
Output return loss
f= 200 to 1000 MHz
f= 800 to 1800 MHz
RLOUT
-
-
12
12
-
9.5
Third order intercept point
Two tone intermodulation test
f1 = 806 MHz, f2 = 810 MHz, P0=10 dbm
IP3 31 32 - dBm
1dB gain compression
f= 200 to 1800 MHz P1dB - 18 -
Gain control dynamic range,
(per gate control voltage)
f= 200 to 1000 MHz
f= 800 to 1800 MHz
GDYN
-
-
30
20
-
-
dB
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CGY41
Application Circuit (f= 800 to 1800 MHz)
CGY41
50
O
hm Mi
c
r
ost
ri
p
lin
e
In
p
ut
50Ohm
Out
p
ut
50Ohm
3
2
VD
1
VG
1
L
C
C3
L2
2
C
C4
4
1
D
L3
Legend of Components
C1, C2
C3, C4
Chip capacitors 100 pF
Chip capacitors 1 nF
L1For optimized input matching
- discrete inductor: approx. 3nH, or
- printed microstripline inductor: Z approx. 100 W,
le approx. 5 mm
L2, L3- discrete inductor: approx. 40 nH, as e.g. 5 turns 0.25 mm copper
wire on nylon rod with M3-thread, or
- printed microstripline inductor
D Z diode 5.6 V ( type BZW 22 C5 V 6 )
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CGY41
Total power dissipation Ptot = f(TS)
0 20 40 60 80 100 120 °C 150
TS
0
100
200
300
mW
500
Ptot
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CGY41
Mirco-X Package
X Y
1.78
1.02
±0.1
0.1
ø1.65
±0.1
0.76
±0.25
1.05
GXM05552
1
2
3
4
-0.03
+0.05
-0.2
4.2
0.5
±0.1
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CGY41
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
