CGY41 HiRel L- and S-Band GaAs General Purpose Amplifier * HiRel Discrete and Microwave Semiconductor * Single- stage monolithic mircrowave IC (MMIC- amplifier) * Application range: 100 MHZ to 3 GHz * Gain: 9.5 dB typ. @ 1.8 GHz * Low noise figure: 2.7 dB typ. @ 1.8 GHz * Bandwidth: 3 GHz typ. @ -3 dB, VSWR < 2:1* Operating voltage range: 3 to 5.5 V * Input and output matched to 50 * Individual currenet control with neg. gate bias * Hermetically sealaed ceramic package micro-x CGY41 OUT (VD) 3 IN (VG) 1 2,4 (VS) ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking CGY41 - Pin Configuration 1=inVG 2=Vs 3=Out Package 4=Vs MICRO-X (ql) Testing level: P: Professional testing H: High Rel quality S: Space quality ES: ESA qualified 1 2007-08-20 CGY41 Maximum Ratings Parameter Symbol Drain-voltage VD 5.5 Drain-gate voltage VDG 9.5 Gate-voltage VG RF input power1) PRF,in 16 dBm Channel temperature TCH 175 C Storage temperature Tstg -55...175 Total power dissipation(TS 82C)2) Ptot 440 mW Thermal Resistance Parameter Symbol Value Unit Channel- soldering point2) RthChs 155 K/W 1@ 2T Value Unit V -4...0 VD >4.5V derating required. S is measured on the source lead at the soldering point to the PCB. Notes: Exceeding any of the max. ratings may cause permanent damage to the device. Appropriate handling is required to protect the electrostatic sensitive MMIC against degradation due to excess voltage or current spikes. Proper ground connection of leads 2 and 4 (with min. inductance) is required to achieve the guaranteed RF performance, stable operating conditions and adequate cooling. 2 2007-08-20 CGY41 Electrical Characteristics Parameter Symbol Values Unit min. typ. max. 40 60 80 Characteristics Drain current ID Power Gain G mA dB f = 200 MHz 9.5 10.5 12 f = 1800 MHz 8.5 9.5 11 f= 200 to 1000 MHz - 0.4 - f= 800 to 1800 MHz - 1.1 2 f= 200 to 1000 MHz - 2.5 - f= 800 to 1800 MHz - 2.7 4 f= 200 to 1000 MHz - 13 - f= 800 to 1800 MHz - 12 9.5 f= 200 to 1000 MHz - 12 - f= 800 to 1800 MHz - 12 9.5 31 32 - - 18 - G Gain flatness Noise figure F Input return loss RLIN Output return loss RLOUT Third order intercept point IP3 dBm Two tone intermodulation test f1 = 806 MHz, f2 = 810 MHz, P0=10 dbm 1dB gain compression P1dB f= 200 to 1800 MHz Gain control dynamic range, dB GDYN (per gate control voltage) - 30 - f= 200 to 1000 MHz - 20 - f= 800 to 1800 MHz 3 2007-08-20 CGY41 Application Circuit (f= 800 to 1800 MHz) V D V G C 3 D L Input C L 2 2 C1 3 C 3 4 2 Output CGY41 50Ohm L 1 1 50Ohm 4 50 Ohm Microstripline Legend of Components C1, C 2 Chip capacitors 100 pF C3, C4 Chip capacitors 1 nF L1 For optimized input matching - discrete inductor: approx. 3nH, or - printed microstripline inductor: Z approx. 100 W, le approx. 5 mm L2, L 3 - discrete inductor: approx. 40 nH, as e.g. 5 turns 0.25 mm copper wire on nylon rod with M3-thread, or - printed microstripline inductor D Z diode 5.6 V ( type BZW 22 C5 V 6 ) 4 2007-08-20 CGY41 Total power dissipation P tot = f(TS) 500 Ptot mW 300 200 100 0 0 20 40 60 80 100 120 C 150 TS 5 2007-08-20 CGY41 Mirco-X Package 1.05 0.25 1.02 0.1 0.76 3 o1.65 0.1 1 XY 4.2 -0.2 0.5 0.1 2 4 1.78 0.1 +0.05 -0.03 GXM05552 6 2007-08-20 CGY41 Edition 2006-02-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2007-08-20