620A
INVERTER GRADE THYRISTORS Puk Version
ST303C..C SERIES
1
Bulletin I25172 rev. B 04/00
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case style TO-200AB (E-PUK)
Features
Metal case with ceramic insulator
International standard case TO-200AB (E-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
Major Ratings and Characteristics
(*) tq = 10 to 20µs for 400 to 800V devices
tq = 15 to 30µs for 1000 to 1200V devices
IT(AV) 620 A
@ Ths 55 °C
IT(RMS) 1180 A
@ Ths 25 °C
ITSM @ 50Hz 7950 A
@ 60Hz 8320 A
I2t@
50Hz 316 KA2s
@ 60Hz 289 KA2s
VDRM/VRRM 400 to 1200 V
tq range (*) 10 to 30 µs
TJ- 40 to 125 °C
Parameters ST303C..C Units
ST303C..C Series
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Bulletin I25172 rev. B 04/00
Voltage VDRM/VRRM, maximum VRSM , maximum IDRM/IRRM max.
Type number Code repetitive peak voltage non-repetitive peak voltage @ TJ = TJ max.
VVmA
04 400 500
08 800 900
10 1000 1100
12 1200 1300
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Frequency Units
50Hz 1314 1130 2070 1940 6930 6270
400Hz 1260 1040 2190 1880 3440 2960
1000Hz 900 700 1900 1590 1850 1540 A
2500Hz 340 230 910 710 740 560
Recovery voltage Vr 50 50 50 50 50 50
Voltage before turn-on Vd VDRM VDRM V DRM
Rise of on-state current di/dt 50 50 - - - - A/µs
Heatsink temperature 40 55 40 55 40 55 °C
Equivalent values for RC circuit 10Ω / 0.47µF 10Ω / 0.47µF 10Ω / 0.47µF
ITM
180oel
180oel 100µs
ITM ITM
Current Carrying Capability
V
ST303C..C 50
IT(AV) Max. average on-state current 620 (230) A 180° conduction, half sine wave
@ Heatsink temperature 55 (85) °C double side (single side) cooled
IT(RMS) Max. RMS on-state current 1180 DC @ 25°C heatsink temperature double side cooled
ITSM Max. peak, one half cycle, 7950 t = 10ms No voltage
non-repetitive surge current 8320 A t = 8.3ms reapplied
6690 t = 10ms 100% VRRM
7000 t = 8.3ms reapplied Sinusoidal half wave,
I2t Maximum I2t for fusing 316 t = 10ms No voltage Initial TJ = TJ max
289 t = 8.3ms reapplied
224 t = 10ms 100% VRRM
204 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 3160 KA2√s t = 0.1 to 10ms, no voltage reapplied
Parameter ST303C..C Units Conditions
On-state Conduction
KA2s
ST303C..C Series
3
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Bulletin I25172 rev. B 04/00
VTM Max. peak on-state voltage 2.16 ITM= 1255A, TJ = TJ max, tp = 10ms sine wave pulse
VT(TO)1 Low level value of threshold
voltage
VT(TO)2 High level value of threshold
voltage
rt1Low level value of forward
slope resistance
rt2High level value of forward
slope resistance
IHMaximum holding current 600 TJ = 25°C, IT > 30A
ILTypical latching current 1000 TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A
Parameter ST303C..C Units Conditions
On-state Conduction
1.44 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
V
0.56 (I > π x IT(AV)), TJ = TJ max.
mΩ
mA
di/dt Max. non-repetitive rate of rise TJ = TJ max, VDRM = rated VDRM
of turned-on current ITM = 2 x di/dt
TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, tp= 1µs
Resistive load, Gate pulse: 10V, 5Ω source
TJ = TJ max, ITM = 550A, commutating di/dt = 40A/µs
VR = 50V, tp = 500µs, dv/dt: see table in device code
Switching
Parameter ST303C..C Units Conditions
1000 A/µs
tdTypical delay time 0.83
Min Max
dv/dt Maximum critical rate of rise of TJ = TJ max. linear to 80% VDRM, higher value
off-state voltage available on request
IRRM Max. peak reverse and off-state
IDRM leakage current
Parameter ST303C..C Units Conditions
Blocking
500 V/µs
50 mA TJ = TJ max, rated VDRM/V RRM applied
PGM Maximum peak gate power 60
PG(AV) Maximum average gate power 10
IGM Max. peak positive gate current 10 A TJ = TJ max, tp ≤ 5ms
+VGM Maximum peak positive
gate voltage
-VGM Maximum peak negative
gate voltage
IGT Max. DC gate current required
to trigger
VGT Max. DC gate voltage required
to trigger
IGD Max. DC gate current not to trigger 20 mA
VGD Max. DC gate voltage not to trigger 0.25 V
Triggering
Parameter ST303C..C Units Conditions
20
5
VT
J = TJ max, tp ≤ 5ms
200 mA
3V
µs
tqMax. turn-off time (*) 10 30
WT
J = TJ max, f = 50Hz, d% = 50
(*) tq = 10 to 20µs for 400 to 800V devices; tq = 15 to 30µs for 1000 to 1200V devices.
1.48 (I > π x IT(AV)), TJ = TJ max.
0.57 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
TJ = TJ max, rated VDRM applied
TJ = 25°C, VA = 12V, Ra = 6Ω
ST303C..C Series
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Bulletin I25172 rev. B 04/00
Ordering Information Table
5689
ST 30 3 C 12 C H K 1
34 7
Device Code
1210
1- Thyristor
2- Essential part number
3- 3 = Fast turn off
4- C = Ceramic Puk
5- Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
6- C = Puk Case TO-200AB (E-PUK)
7- Reapplied dv/dt code (for tq test condition)
8-t
q code
9- 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
- Critical dv/dt:
None = 500V/µsec (Standard value)
L = 1000V/µsec (Special selection)
only for
1000/1200V
up to 800V
dv/dt - tq combinations available
dv/dt (V/µs) 20 50 100 200 400
tq(µs) 10 CN DN EN FN * HN
12 CM DM EM FM HM
15 CL DL EL FL * HL
20 CK DK EK FK * HK
tq(µs) 15 CL -- -- -- --
18 CP DP -- -- --
20 CK DK EK FK * HK
25 CJ DJ EJ FJ * HJ
30 -- DH EH FH HH
10
*Standard part number.
All other types available only on request.
TJMax. operating temperature range -40 to 125
Tstg Max. storage temperature range -40 to 150
RthJ-hs Max. thermal resistance, 0.09 DC operation single side cooled
junction to heatsink 0.04 DC operation double side cooled
RthC-hs Max. thermal resistance, 0.020 DC operation single side cooled
case to heatsink 0.010 DC operation double side cooled
F Mounting force, ± 10% 9800 N
(1000) (Kg)
wt Approximate weight 83 g
Parameter ST303C..C Units Conditions
K/W
Thermal and Mechanical Specification
°C
K/W
Case style TO - 200AB (E-PUK) See Outline Table
Single Side Double Side Single Side Double Side
180°0.010 0.010 0.007 0.007
120°0.012 0.012 0.012 0.013
90°0.015 0.015 0.016 0.017 K/W TJ = TJ max.
60°0.022 0.022 0.023 0.023
30°0.036 0.036 0.036 0.037
Sinusoidal conduction Rectangular conduction
Conduction angle Units Conditions
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
ST303C..C Series
5
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Bulletin I25172 rev. B 04/00
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
20
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Conduction Period
Maxim um Allowable Heatsink Tem perature (°C)
ST303C ..C Series
( S in g le S id e C o o le d )
R (D C ) = 0.09 K/W
thJ-hs
40
50
60
70
80
90
100
110
120
130
0 50 100 150 200 250 300 350 400
30°
60°
90°
120°
180°
Average On-state Current (A)
Conduction Angle
M aximum Allowable Heatsink Temperature (°C)
ST303C ..C Series
(Single Side Co oled)
R (D C) = 0.0 9 K/W
thJ-hs
Outline Table
Case Style TO-200AB (E-PUK)
All dimensions in millimeters (inches)
DIA. MAX.
4.75 (0.19)
28 (1.10)
6.5 (0.26)
0.3 (0.01) MIN.
0.3 (0.01) MIN.
ANODE TO GATE
CREEPAGE DISTANCE: 11.18 (0.44) MIN.
STRIKE DISTANCE: 7.62 (0.30) MIN.
25.3 (0.99)
14.1 / 15.1
(0.56 / 0.59)
25°± 5°
GATE TERM. FOR
1.47 (0.06) DIA.
PIN RECEPTACLE
25.3 (0.99)
40.5 (1.59) DIA. MAX.
DIA. MAX.
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
42 (1.65) MAX.
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
ST303C..C Series
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Bulletin I25172 rev. B 04/00
Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-state Power Loss Characteristics Fig. 6 - On-state Power Loss Characteristics
Fig. 8 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
Fig. 7 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
20
30
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000 1200
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Conduction Period
Maximum Allowable Heatsink Temperature (°C)
ST303C ..C Series
(Double Side Cooled)
R (D C ) = 0.04 K/W
th J-hs
20
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700 800
30°
60°
90°
120°
180°
Average On-state Current (A)
Conduction Angle
Maxim um Allowable Heatsink Temperature (°C)
ST303C ..C Series
(D ouble Side Cooled)
R (D C) = 0.0 4 K/W
thJ-hs
0
400
800
1200
1600
2000
2400
2800
0 200 400 600 800 1000 1200
DC
180°
120°
90°
60°
30°
RMS Lim it
Conduction Period
Maximum Average On-state Power Loss (W)
A ve ra g e On -sta te Curre nt (A )
ST30 3C ..C Series
T = 125°C
J
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0 100 200 300 400 500 600 700 800
180°
120°
90°
60°
30°
RMS Limit
Conduction Angle
Maximum Average On-state Power Loss (W)
A verag e O n-sta te Curre nt (A )
ST303C ..C Series
T = 125°C
J
3000
3500
4000
4500
5000
5500
6000
6500
7000
7500
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
In itia l T = 125 °C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
ST303C..C Series
At An y Rated L oad Con dition And W ith
Rated V Applied Following Surge.
RRM
3000
3500
4000
4500
5000
5500
6000
6500
7000
7500
8000
0.01 0.1 1
P u ls e Tr a in D u ra t io n ( s )
V ersus P ulse Tra in D ura tion . C on tro l
Of Conduction May Not Be Maintained.
Peak Half Sine W ave On-state Current (A)
In it ia l T = 1 2 5 °C
N o V o lt a g e R e a pp lie d
Rated V Re ap plied
RRM
J
ST303C ..C Series
M ax im um N on Rep e titiv e Surg e C urre n t
ST303C..C Series
7
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Bulletin I25172 rev. B 04/00
Fig. 9 - On-state Voltage Drop Characteristics Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics
Fig. 13 - Frequency Characteristics
100
1000
10000
012345678
T = 25°C
J
Instan taneous On-state Curren t (A)
Instantaneous On-state Voltage (V)
T = 125°C
J
ST303C..C Series
20
40
60
80
100
120
140
160
180
10 20 30 40 50 60 70 80 90 100
M ax im um Reve rse Rec ove ry C urren t - Irr (A )
R a te O f Fa ll O f Fo rw a rd C ur ren t - d i/d t (A /µs)
I = 500 A
300 A
200 A
100 A
50 A
TM
ST303 C..C Series
T = 125 °C
J
0.001
0.01
0.1
0.001 0.01 0.1 1 10
Square W ave Pulse D uration (s)
thJ-hs
T ran sient The rm a l Im ped anc e Z (K/W )
ST303C ..C Series
Stead y State V a lue
R = 0 .09 K/W
(Single Side Co oled)
R = 0 .04 K/W
(Double Side Co oled )
(D C O peration)
th J- hs
thJ-hs
80
100
120
140
160
180
200
220
240
260
280
300
320
10 20 30 40 50 60 70 80 90 100
I = 50 0 A
300 A
200 A
100 A
50 A
Rate Of Fall Of On-state Current - di/dt (A/µs)
Maximum Reverse Recovery Charge - Q rr (µC)
TM
ST303C..C Series
T = 125 °C
J
1E11E21E31E4
50 Hz
400
2500
100
Pulse B ase w idth (µs)
1000
1500
3000
200
500
Snubber circuit
R = 1 0 o hm s
C = 0.4 7 µF
V = 80% V
s
s
DDRM
ST303C ..C S eries
Sinu so id al puls e
T = 55°C
C
2000
tp
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
Pulse Basew idth (µs)
Peak O n-state Curren t (A)
1000
1500
3000
200
500
Sn ub b e r circ u it
R = 10 ohm s
C = 0.47 µF
V = 80 % V
s
s
DDRM
ST303C ..C Series
Sin uso id a l pu lse
T = 40°C
C
2000
tp
1E4
ST303C..C Series
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Bulletin I25172 rev. B 04/00
Fig. 14 - Frequency Characteristics
Fig. 15 - Frequency Characteristics
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
1000
1500
2000
3000
200
500
Pulse Base w idth (µs)
Peak O n-state C urrent (A)
Snub be r c irc uit
R = 10 ohm s
C = 0.47 µF
V = 80% V
s
s
DDRM
ST3 03C ..C Serie s
Trapezoidal pulse
T = 40°C
di/dt = 100A/µs
C
tp
1E4
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
1000
1500
2000
3000
200
500
Pulse Basewidth (µs)
Peak O n-state C urrent (A)
Snubber circuit
R = 10 ohm s
C = 0.4 7 µF
V = 80% V
s
s
DDRM
ST303 C..C Se ries
Tra pezo id al p ulse
T = 40°C
di/dt = 50A/µs
C
tp
1E4
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
Pulse Basew id th (µs)
1000
1500
2000
200
500
ST303C ..C Series
Trapezoidal pulse
T = 55°C
di/dt = 100A/µs
C
Snubber circuit
R = 10 ohm s
C = 0.47 µF
V = 80% V
s
s
DDRM
tp
3000
1E1
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
Pulse Basewidth (µs)
1000
1500
2000
200
500
ST303C..C Series
Tra p ezoid a l p uls e
T = 55°C
di/dt = 50A/µs
C
Snubber circuit
R = 1 0 o hm s
C = 0 .47 µF
V = 8 0% V
s
s
DDRM
3000
1E1
tp
1E1
1E2
1E3
1E4
1E5
1E1 1E 2 1 E3 1E4
Pulse Basew id th (µs)
20 joules per pulse
2
1
0.5
10
5
Peak On -state C urrent (A)
3
ST3 03C ..C Serie s
Sinusoidal pulse
0.4
tp
1E4 1E1 1E2 1E3 1E4
Pulse B a sew idth (µs)
2 0 jo u le s p e r p uls e
2
1
0.5
ST303C..C Series
Re cta ngu la r p u ls e
di/d t = 50A/µs
10
5
3
0.4
tp
1E1
ST303C..C Series
9
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Bulletin I25172 rev. B 04/00
Fig. 17 - Gate Characteristics
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
Tj=25 °C
Tj=125 °C
Tj=-40 °C
(1)
(2)
Instantaneous Gate Current
(
A
)
Instantaneous Gate Voltage (V)
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
rated di/dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms
(3)
Device: ST303C..C Series Frequency Limited by PG(AV)
(4)
