ST303CLPbF Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 515 A FEATURES * * * * * * * * * * * TO-200AC (B-PUK) PRODUCT SUMMARY IT(AV) Metal case with ceramic insulator All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt International standard case TO-200AC (B-PUK) High surge current capability Low thermal impedance High speed performance Lead (Pb)-free Designed and qualified for industrial level RoHS COMPLIANT TYPICAL APPLICATIONS 515 A * * * * Inverters Choppers Induction heating All types of force-commutated converters MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths ITSM I2 t UNITS 515 A 55 C 995 A 25 C 50 Hz 7950 60 Hz 8320 50 Hz 316 60 Hz 289 VDRM/VRRM tq VALUES Range TJ A kA2s 400 to 1200 V 10 to 30 s - 40 to 125 C Note * tq = 10 to 20 s for 400 to 800 V devices tq = 15 to 30 s for 1000 to 1200 V devices ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 04 400 500 08 800 900 10 1000 1100 12 1200 1300 ST303C..L Document Number: 94374 Revision: 25-Jul-08 For technical questions, contact: ind-modules@vishay.com IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 50 www.vishay.com 1 ST303CLPbF Series Inverter Grade Thyristors (Hockey PUK Version), 515 A Vishay High Power Products CURRENT CARRYING CAPABILITY ITM FREQUENCY ITM 180 el 50 Hz 1130 400 Hz 1000 Hz 2500 Hz 230 100 s 180 el 1800 1540 5660 4990 1010 820 1850 1570 2830 2420 680 530 1560 1300 1490 1220 140 690 510 540 Voltage before turn-on VD 50 50 VDRM VDRM VDRM 50 40 55 10/0.47 40 A 390 50 Rise of on-state current dI/dt Equivalent values for RC circuit UNITS 950 Recovery voltage VR Heatsink temperature ITM V 55 10/0.47 A/s 40 55 C /F 10/0.47 ON-STATE CONDUCTION PARAMETER SYMBOL Maximum average on-state current at heatsink temperature IT(AV) Maximum RMS on-state current IT(RMS) Maximum peak, one half cycle, non-repetitive surge current ITSM TEST CONDITIONS 180 conduction, half sine wave double side (single side) cooled 995 t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t I2t for fusing Maximum peak on-state voltage VTM C 7950 t = 10 ms I2t A 55 (85) t = 10 ms t = 8.3 ms No voltage reapplied 100 % VRRM reapplied No voltage reapplied 8320 A 6690 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied 7000 316 289 224 3160 ITM = 1255 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 2.16 1.44 VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.48 Low level value of forward slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.57 High level value of forward slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.56 Maximum holding current IH TJ = 25 C, IT > 30 A 600 Typical latching current IL TJ = 25 C, VA = 12 V, Ra = 6 , IG = 1 A 1000 For technical questions, contact: ind-modules@vishay.com kA2s 204 t = 0.1 to 10 ms, no voltage reapplied Low level value of threshold voltage www.vishay.com 2 UNITS 515 (190) DC at 25 C heatsink temperature double side cooled t = 8.3 ms Maximum I2t for fusing VALUES kA2s V m mA Document Number: 94374 Revision: 25-Jul-08 ST303CLPbF Series Inverter Grade Thyristors Vishay High Power Products (Hockey PUK Version), 515 A SWITCHING PARAMETER SYMBOL Maximum non-repetitive rate of rise of turned on current VALUES UNITS TJ = TJ maximum, VDRM = rated VDRM ITM = 2 x dI/dt 1000 A/s td TJ = 25 C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 s Resistive load, gate pulse: 10 V, 5 source 0.83 tq TJ = TJ maximum, ITM = 550 A, commutating dI/dt = 40 A/s VR = 50 V, tp = 500 s, dV/dt: See table in device code dI/dt Typical delay time minimum Maximum turn-off time (1) maximum TEST CONDITIONS 10 s 30 Note (1) t = 10 to 20 s for 400 to 800 V devices; t = 15 to 30 s for 1000 to 1200 V devices q q BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 500 V/s Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM, higher value available on request Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 50 mA SYMBOL TEST CONDITIONS VALUES UNITS TRIGGERING PARAMETER Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM Maximum DC gate currrent required to trigger IGT Maximum DC gate voltage required to trigger VGT Maximum DC gate current not to trigger IGD Maximum DC gate voltage not to trigger VGD TJ = TJ maximum, f = 50 Hz, d% = 50 60 10 10 TJ = TJ maximum, tp 5 ms 20 5 TJ = 25 C, VA = 12 V, Ra = 6 TJ = TJ maximum, rated VDRM applied 200 W A V mA 3 V 20 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range Maximum storage temperature range TEST CONDITIONS TJ - 40 to 125 TStg - 40 to 150 Maximum thermal resistance, junction to heatsink RthJ-hs Maximum thermal resistance, case to heatsink RthC-hs DC operation single side cooled 0.11 DC operation double side cooled 0.05 DC operation single side cooled 0.011 DC operation double side cooled 0.005 Mounting force, 10 % Approximate weight Case style Document Number: 94374 Revision: 25-Jul-08 See dimensions - link at the end of datasheet For technical questions, contact: ind-modules@vishay.com C K/W 9800 (1000) N (kg) 250 g TO-200AC (B-PUK) www.vishay.com 3 ST303CLPbF Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 515 A RthJ-hs CONDUCTION SINUSOIDAL CONDUCTION CONDUCTION ANGLE RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180 0.012 0.010 0.008 0.008 120 0.014 0.015 0.014 0.014 90 0.018 0.018 0.019 0.019 60 0.026 0.027 0.027 0.028 30 0.045 0.046 0.046 0.046 TEST CONDITIONS UNITS TJ = TJ maximum K/W ST303C..L Series (Single Side Cooled) RthJ-hs(DC) = 0.11 K/ W 120 110 100 90 Conduction Angle 80 30 60 70 90 120 60 180 50 40 0 50 100 150 200 250 300 350 130 ST303C..L Series (Double Side Cooled) RthJ-hs(DC) = 0.05 K/ W 120 110 100 90 Conduc tion Angle 80 70 60 30 60 90 50 120 40 180 30 0 100 200 300 400 500 600 700 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 3 - Current Ratings Characteristics 130 ST303C..L Series (Single Side Cooled) RthJ-hs(DC) = 0.11 K/ W 120 110 100 90 80 Conduction Period 70 60 30 50 60 40 90 120 30 180 20 0 www.vishay.com 4 Maximum Allowable Heatsink Temp erature (C) 130 100 200 300 400 DC 500 600 Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC 130 ST303C..L Series (Double Side Cooled) RthJ-hs(DC) = 0.05 K/ W 120 110 100 90 Conduc tion Period 80 70 30 60 60 90 50 120 180 40 30 DC 20 0 200 400 600 800 1000 1200 Average On-state Current (A) Average On-state Current (A) Fig. 2 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics For technical questions, contact: ind-modules@vishay.com Document Number: 94374 Revision: 25-Jul-08 ST303CLPbF Series 1400 180 120 90 60 30 1200 RMS Limit 1800 1600 1000 800 Conduction Angle 600 400 ST303C..L Series TJ = 125C 200 0 0 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. 7000 Initial TJ = 125C No Voltage Reapplied 6500 Rated VRRM Reapplied 6000 7500 5500 5000 4500 4000 ST303C..L Series 3500 3000 0.01 100 200 300 400 500 600 700 800 0.1 1 Average On-state Current (A) Pulse Train Duration (s) Fig. 5 - On-State Power Loss Characteristics Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 2600 2000 1800 1600 1400 1200 RMSLimit 1000 Conduction Period 800 600 ST303C..L Series TJ = 125C 400 200 Instantaneous On-state Current (A) 10000 DC 180 120 90 60 30 2400 2200 0 1000 TJ = 25C TJ = 125C ST303C..L Series 100 0 Peak Half Sine Wave On-state Current (A) 8000 Peak Half Sine Wave On-state Current (A) 2000 200 400 600 800 1000 1200 0 1 2 3 4 5 6 7 8 Average On-state Current (A) Instantaneous On-state Voltage (V) Fig. 6 - On-state Power Loss Characteristics Fig. 9 - On-state Voltage Drop Characteristics 7000 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 6500 6000 5500 5000 4500 4000 ST303C..L Series 3500 3000 1 10 100 Number Of Equal Amplitude Half Cyc le Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Document Number: 94374 Revision: 25-Jul-08 Transient Thermal Impedance Z thJ-hs (K/ W) Maximum Average On-state Power Loss (W) Maximum Average On-state Power Loss (W) Inverter Grade Thyristors Vishay High Power Products (Hockey PUK Version), 515 A 1 Steady State Value RthJ-hs = 0.11 K/ W (Single Side Cooled) 0.1 RthJ-hs = 0.05 K/ W (Double Side Cooled) (DC Operation) 0.01 ST303C..L Series 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 ST303CLPbF Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 515 A 300 ITM = 1000 A 280 500 A 260 300 A 200 A 240 100 A 220 200 180 160 140 ST303C..L Series TJ = 125 C 120 100 80 10 20 30 40 50 180 I = 1000 A 170 TM 160 500 A 150 300 A 140 200 A 130 100 A 120 110 100 90 80 70 ST303C..L Series 60 TJ = 125 C 50 40 30 10 20 30 40 50 60 70 80 90 100 Maximum Reverse Rec overy Current - Irr (A) Maximum Reverse Rec overy Charge - Qrr (C) 320 60 70 80 90 100 Rate Of Fall Of On-state Current - di/ dt (A/ s) Rate Of Fall Of Forward Current - di/ dt (A/ s) Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics Peak On-state Current (A) 1E4 1000 200 500 400 100 50 Hz 1000 1500 2000 2500 3000 1E2 1E3 1E Snubber c ircuit R s = 10 ohms C s = 0.47 F V D = 80% VDRM 2000 2500 ST303C..L Series Sinusoida l pulse TC = 40C tp 1E2 1E1 100 50 Hz 400 200 1500 Snub ber circ uit R s = 10 ohms C s = 0.47 F V D = 80% VDRM 1E3 500 ST303C..L Series Sinusoidal pulse TC = 55C 3000 tp 1E1 1E1 1E2 1E3 1E4 Pulse Basewidth (s) Pulse Basewidth (s) Fig. 13 - Frequency Characteristics Peak On-state Current (A) 1E4 Snub b er c ircuit R = 10 ohms s C = 0.47 F s V = 80% V DRM D 500 1E3 50 Hz 400 200 100 Snubb er circ uit Rs = 10 ohms Cs = 0.47 F V D = 80% VDRM 1000 1000 1500 500 400 200 100 50 Hz 1500 2000 2000 2500 2500 1E2 3000 ST303C..L Series Trap ezoid al p ulse TC = 40C d i/ d t = 50A/ s tp 1E1 1E1 1E2 1E3 1E4 ST303C..L Series Tra pezoida l pulse TC = 55C d i/d t = 50A/s 3000 tp 1E1 1E2 1E3 1E4 Pulse Basewidth (s) Pulse Basewidth (s) Fig. 14 - Frequency Characteristics www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 94374 Revision: 25-Jul-08 ST303CLPbF Series Inverter Grade Thyristors Vishay High Power Products (Hockey PUK Version), 515 A Peak On-state Current (A) 1E4 Snub ber circuit R s = 10 ohms C s = 0.47 F V D = 80% V DRM Snub b er circ uit Rs = 10 ohms Cs = 0.47 F VD = 80% V DRM 1E3 500 1000 400 200 50 Hz 100 50 Hz 1000 1500 1500 2000 2000 2500 1E2 200 100 400 500 2500 3000 tp 1E1 1E1 1E2 3000 ST303C..L Series Tra pezoid al p ulse TC = 40C di/ d t = 100A/ s 1E3 ST303C..L Series Tra pezoida l p ulse TC = 55C di/ dt = 100A/ s tp 1E1 1E4 1E2 1E3 1E4 Pulse Basewidth (s) Pulse Basewidth (s) Fig. 15 - Frequency Characteristics 1E5 Peak On-state Current (A) ST303C..L Series Rec tangular pulse tp 1E4 d i/d t = 50A/ s 20 joules p er p ulse 2 3 5 20 joules p er p ulse 10 10 5 3 1 1E3 2 0.5 1 0.4 0.5 1E2 0.4 tp 1E1 1E1 ST303C..L Series Sinusoid al p ulse 1E2 1E3 1E1 1E1 1E4 1E2 1E3 1E4 Pulse Basewidth (s) Pulse Basewidth (s) Fig. 16 - Maximum On-State Energy Power Loss Characteristics 10 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30%rated di/dt : 10V, 10ohms tr<=1 s (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, tp = 20ms tp = 10ms tp = 5ms tp = 3.3ms (a) (b) Tj=25 C 1 Tj=-40 C Tj=125 C InstantaneousGate Voltage (V) 100 (1) (2) (3) (4) VGD IGD 0.1 0.001 Device: ST303C..LSeries Frequency Limited by PG(AV) 0.01 0.1 1 10 100 InstantaneousGate Current (A) Fig. 17 - Gate Characteristics Document Number: 94374 Revision: 25-Jul-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 7 ST303CLPbF Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 515 A ORDERING INFORMATION TABLE Device code ST 30 3 C 12 L H K 1 - P 1 2 3 4 5 6 7 8 9 10 11 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn-off 4 - C = Ceramic PUK 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - C = PUK case TO-200AC (B-PUK) 7 - Reapplied dV/dt code (for tq test condition) 8 - tq code 9 - 0 = Eyelet terminals CL 15 tq (s) CP DP 18 (gate and auxiliary cathode unsoldered leads) CK DK EK FK* HK 20 only for 1 = Fast-on terminals CJ DJ EJ FJ* HJ 1000/1200 V 25 - DH EH FH HH 30 (gate and auxiliary cathode unsoldered leads) * Standard part number. 2 = Eyelet terminals All other types available only on request. (gate and auxiliary cathode soldered leads) dV/dt - tq combinations available dV/dt (V/s) 10 tq (s) 12 up to 800 V 15 20 20 CN CM CL CK 50 DN DM DL DK 100 EN EM EL EK 200 FN* FM FL* FK* 400 HN HM HL HK 3 = Fast-on terminals (gate and auxiliary cathode soldered leads) 10 - Critical dV/dt: None = 500 V/s (standard value) L = 1000 V/s (special selection) 11 - P = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 8 http://www.vishay.com/doc?95076 For technical questions, contact: ind-modules@vishay.com Document Number: 94374 Revision: 25-Jul-08 Outline Dimensions Vishay Semiconductors TO-200AC (B-PUK) DIMENSIONS in millimeters (inches) Creepage distance: 36.33 (1.430) minimum Strike distance: 17.43 (0.686) minimum 0.7 (0.03) MIN. 34 (1.34) DIA. MAX. 2 places 27 (1.06) MAX. Pin receptacle AMP. 60598-1 0.7 (0.03) MIN. 53 (2.09) DIA. MAX. 6.2 (0.24) MIN. 20 5 58.5 (2.3) DIA. MAX. 4.7 (0.18) 36.5 (1.44) 2 holes DIA. 3.5 (0.14) x 2.5 (0.1) deep Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) Document Number: 95076 Revision: 01-Aug-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000