Document Number: 94374 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 25-Jul-08 1
Inverter Grade Thyristors
(Hockey PUK Version), 515 A
ST303CLPbF Series
Vishay High Power Products
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• Guaranteed high dI/dt
• International standard case TO-200AC (B-PUK)
• High surge current capability
• Low thermal impedance
• High speed performance
• Lead (Pb)-free
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
•Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
Note
•t
q = 10 to 20 µs for 400 to 800 V devices
tq = 15 to 30 µs for 1000 to 1200 V devices
ELECTRICAL SPECIFICATIONS
PRODUCT SUMMARY
IT(AV) 515 A
TO-200AC (B-PUK)
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV)
515 A
Ths 55 °C
IT(RMS)
995 A
Ths 25 °C
ITSM
50 Hz 7950 A
60 Hz 8320
I2t50 Hz 316 kA2s
60 Hz 289
VDRM/VRRM 400 to 1200 V
tqRange 10 to 30 µs
TJ- 40 to 125 °C
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
ST303C..L
04 400 500
50
08 800 900
10 1000 1100
12 1200 1300
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2Revision: 25-Jul-08
ST303CLPbF Series
Vishay High Power Products Inverter Grade Thyristors
(Hockey PUK Version), 515 A
CURRENT CARRYING CAPABILITY
FREQUENCY UNITS
50 Hz 1130 950 1800 1540 5660 4990
A
400 Hz 1010 820 1850 1570 2830 2420
1000 Hz 680 530 1560 1300 1490 1220
2500 Hz 230 140 690 510 540 390
Recovery voltage VR50 50 50 V
Voltage before turn-on VDVDRM VDRM VDRM
Rise of on-state current dI/dt 50 - - A/µs
Heatsink temperature 40 55 40 55 40 55 °C
Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 Ω/µF
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state
current at heatsink temperature IT(AV)
180° conduction, half sine wave
double side (single side) cooled
515 (190) A
55 (85) °C
Maximum RMS on-state current IT(RMS) DC at 25 °C heatsink temperature double side cooled 995
A
Maximum peak, one half cycle,
non-repetitive surge current ITSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
7950
t = 8.3 ms 8320
t = 10 ms 100 % VRRM
reapplied
6690
t = 8.3 ms 7000
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
316
kA2s
t = 8.3 ms 289
t = 10 ms 100 % VRRM
reapplied
224
t = 8.3 ms 204
Maximum I2√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 3160 kA2√s
Maximum peak on-state voltage VTM
ITM = 1255 A, TJ = TJ maximum,
tp = 10 ms sine wave pulse 2.16
V
Low level value of threshold voltage VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 1.44
High level value of threshold voltage VT(TO)2 (I > π x IT(AV)), TJ = TJ maximum 1.48
Low level value of forward slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.57 mΩ
High level value of forward slope resistance rt2 (I > π x IT(AV)), TJ = TJ maximum 0.56
Maximum holding current IHTJ = 25 °C, IT > 30 A 600 mA
Typical latching current ILTJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A 1000
180° el
ITM
180° el
ITM
100 µs
ITM
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Revision: 25-Jul-08 3
ST303CLPbF Series
Inverter Grade Thyristors
(Hockey PUK Version), 515 A Vishay High Power Products
Note
(1) tq = 10 to 20 µs for 400 to 800 V devices; tq = 15 to 30 µs for 1000 to 1200 V devices
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of
rise of turned on current dI/dt TJ = TJ maximum, VDRM = rated VDRM
ITM = 2 x dI/dt 1000 A/µs
Typical delay time td
TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 µs
Resistive load, gate pulse: 10 V, 5 Ω source 0.83
µs
Maximum turn-off time (1)
minimum
tq
TJ = TJ maximum,
ITM = 550 A, commutating dI/dt = 40 A/µs
VR = 50 V, tp = 500 µs, dV/dt: See table in device code
10
maximum 30
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM,
higher value available on request 500 V/µs
Maximum peak reverse and off-state leakage current IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied 50 mA
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM TJ = TJ maximum, f = 50 Hz, d% = 50 60 W
Maximum average gate power PG(AV) 10
Maximum peak positive gate current IGM
TJ = TJ maximum, tp ≤ 5 ms
10 A
Maximum peak positive gate voltage + VGM 20 V
Maximum peak negative gate voltage - VGM 5
Maximum DC gate currrent required to trigger IGT TJ = 25 °C, VA = 12 V, Ra = 6 Ω200 mA
Maximum DC gate voltage required to trigger VGT 3V
Maximum DC gate current not to trigger IGD TJ = TJ maximum, rated VDRM applied 20 mA
Maximum DC gate voltage not to trigger VGD 0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range TJ- 40 to 125 °C
Maximum storage temperature range TStg - 40 to 150
Maximum thermal resistance, junction to heatsink RthJ-hs
DC operation single side cooled 0.11
K/W
DC operation double side cooled 0.05
Maximum thermal resistance, case to heatsink RthC-hs
DC operation single side cooled 0.011
DC operation double side cooled 0.005
Mounting force, ± 10 % 9800
(1000)
N
(kg)
Approximate weight 250 g
Case style See dimensions - link at the end of datasheet TO-200AC (B-PUK)
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4Revision: 25-Jul-08
ST303CLPbF Series
Vishay High Power Products Inverter Grade Thyristors
(Hockey PUK Version), 515 A
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
ΔRthJ-hs CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.012 0.010 0.008 0.008
TJ = TJ maximum K/W
120° 0.014 0.015 0.014 0.014
90° 0.018 0.018 0.019 0.019
60° 0.026 0.027 0.027 0.028
30° 0.045 0.046 0.046 0.046
40
50
60
70
80
90
100
110
120
130
0 50 100150200250300350
30°
60°
90°
120° 180°
Average On-state Current (A)
Conduction Angle
Maximum Allowable Heatsink Temperature (°C)
ST3 0 3 C . . L Se ri e s
(Single Side Cooled)
R (DC) = 0.11 K/ W
thJ-hs
20
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Conduction Period
Maximum Allowable Heatsink Temperature (°C)
ST303C..L Series
(Single Side Cooled)
R (DC) = 0.11 K/ W
thJ-hs
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700
30° 60° 90°
120° 180°
Average On-state Current (A)
Conduc tion Angle
Maximum Allowable Heatsink Temperature (°C)
ST3 0 3 C . . L Se r i e s
(Double Side Cooled)
R (DC) = 0.05 K/ W
thJ-hs
20
30
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000 1200
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Conduction Period
Maximum Allowable Heatsink Temperature (°C
)
ST3 0 3 C . . L Se r i e s
(Double Side Cooled)
R (DC) = 0.05 K/ W
thJ-hs
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Revision: 25-Jul-08 5
ST303CLPbF Series
Inverter Grade Thyristors
(Hockey PUK Version), 515 A Vishay High Power Products
Fig. 5 - On-State Power Loss Characteristics
Fig. 6 - On-state Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - On-state Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0 100 200 300 400 500 600 700 800
180°
120°
90°
60°
30°
RM S Li m it
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
ST303C..L Series
T = 1 25 ° C
J
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
0 200 400 600 800 1000 1200
DC
180°
120°
90°
60°
30°
RM S Li m it
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
ST3 0 3 C . . L Se r i e s
T = 1 2 5 ° C
J
3000
3500
4000
4500
5000
5500
6000
6500
7000
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pea k Ha lf Sine Wa ve On-state Curre nt (A)
Initial T = 125°C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
J
ST303C..L Series
At Any Ra ted Load Cond ition And With
Rated V Applied Following Surge.
RRM
3000
3500
4000
4500
5000
5500
6000
6500
7000
7500
8000
0.01 0.1 1
Pulse Train Duration (s)
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Peak Half Sine Wave On-state Current (A)
Init ia l T = 125°C
No Voltage Reapplied
Ra t e d V Re a p p l i e d
RRM
J
ST3 0 3 C . . L Se r i e s
Maximum Non Repetitive Surge Current
100
1000
10000
012345678
T = 2 5 ° C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T = 125°C
J
ST30 3 C . . L Se r i e s
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
Sq u a r e W a v e Pu l se D u r a t i o n ( s)
thJ-hs
Transient Thermal Impedance Z (K/W)
Steady State Value
R = 0.11 K/ W
(Single Side Cooled)
R = 0.05 K/ W
(Double Side Cooled)
(DC Operation)
ST3 0 3 C . . L Se r i e s
thJ-hs
thJ-hs
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6Revision: 25-Jul-08
ST303CLPbF Series
Vishay High Power Products Inverter Grade Thyristors
(Hockey PUK Version), 515 A
Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics
Fig. 13 - Frequency Characteristics
Fig. 14 - Frequency Characteristics
80
100
120
140
160
180
200
220
240
260
280
300
320
10 20 30 40 50 60 70 80 90 100
200 A
Rate Of Fall Of On-state Current - di/dt (A/µs)
Maximum Reverse Recovery Charge - Qrr (µC)
ST303C..L Series
T = 125 °C
J
I = 1000 A
TM
500 A
300 A
100 A
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
10 20 30 40 50 60 70 80 90 100
Maximum Reverse Recovery Current - Irr (A)
Rate Of Fall Of Forward Current - di/dt (A/µs)
200 A
ST3 0 3 C . . L Se r i e s
T = 1 2 5 ° C
J
I = 1000 A
TM
500 A
300 A
100 A
1E2
1E3
1E4
1E11E21E31E
50 Hz
400
2500
100
Pu lse Ba se w id t h ( µs)
Peak On-sta te Current (A)
1000
1500
3000
200
500
ST3 0 3 C . . L Se r i e s
Si n u s o i d a l p u l se
T = 40 ° C
C
2000
Snub be r c irc uit
R = 10 o h m s
C = 0.47 µF
V = 80% V
s
s
DDRM
tp
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
Pu l se Ba se w i d t h ( µs)
1000
1500
3000
200
500
ST3 0 3 C . . L Se r i e s
Si n u so i d a l p u l se
T = 5 5 ° C
C
Sn u b b e r c i r c u i t
R = 10 o hm s
C = 0.47 µF
V = 80% V
s
s
DDRM
2000
tp
1E1
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
1000
1500
2000
3000
200
500
Pu l se Ba se w id t h ( µs)
Pe a k O n -st a t e C ur re nt (A)
Sn u b b e r c i r c u i t
R = 1 0 o h m s
C = 0.47 µF
V = 80% V
s
s
DDRM
ST3 0 3 C . . L Se r i e s
Trapezoidal pulse
T = 40 ° C
di/dt = 50A/µs
C
tp
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
Pu lse Ba se w id t h ( µs)
1000
1500
2000
200
500
Snu bb e r circ uit
R = 1 0 o h m s
C = 0.47 µF
V = 80% V
s
s
DDRM
ST3 0 3 C . . L Se r i e s
Trapezoidal pulse
T = 55°C
di/dt = 50A/µs
C
tp
3000
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Revision: 25-Jul-08 7
ST303CLPbF Series
Inverter Grade Thyristors
(Hockey PUK Version), 515 A Vishay High Power Products
Fig. 15 - Frequency Characteristics
Fig. 16 - Maximum On-State Energy Power Loss Characteristics
Fig. 17 - Gate Characteristics
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
1000
1500
2000
3000
200
500
Pu lse Ba se w id t h ( µ s)
Pe a k O n- st a t e C urre nt ( A )
ST3 0 3 C . . L Se r i e s
Tra pezo ida l p ulse
T = 40°C
di/ d t = 100A/ µs
C
Snub b er c irc uit
R = 10 o h m s
C = 0.47 µF
V = 80% V
s
s
DDRM
tp
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
Pu lse Ba se w id t h ( µs)
1000
1500
2000
200
500
ST303C..L Series
Trapezoidal pulse
T = 5 5 ° C
di/dt = 100A/µs
C
Snubber circuit
R = 1 0 o h m s
C = 0.47 µF
V = 80% V
s
s
DDRM
tp
3000
1E1
1E2
1E3
1E4
1E5
1E1 1E2 1E3 1E4
Pulse Ba se w id t h ( µs)
20 joules per pulse
2
1
0.5
10
5
Peak On-st ate Current (A)
3
ST3 0 3 C . . L Se r i e s
Si n u so i d a l p u l se
0.4
tp
1E11E21E31E4
Pu lse Ba se w id t h ( µs)
20 jo ules p e r p ulse
2
1
0.5
10
5
0.4
3
ST3 0 3 C . . L Se r i e s
Rectangular pulse
di/dt = 50A/µs
tp
1E1
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
Tj=25 °C
T
j=125 °C
T
j=-40 °C
(1)
(2)
Instantaneous Gate Current
(
A
)
Instantaneous Gate Voltage (V)
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
<=30% rat ed di/ dt : 10V, 10ohms
rated di/ dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, t p = 5ms
(4) PGM = 60W, tp = 3.3ms
(3)
De vi c e: ST303C..L Series Frequency Limited by PG(AV)
(4)
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8Revision: 25-Jul-08
ST303CLPbF Series
Vishay High Power Products Inverter Grade Thyristors
(Hockey PUK Version), 515 A
ORDERING INFORMATION TABLE
3 = Fast-on terminals
1- Thyristor
2- Essential part number
3- 3 = Fast turn-off
4- C = Ceramic PUK
5- Voltage code x 100 = VRRM
10
6- C = PUK case TO-200AC (B-PUK)
7- Reapplied dV/dt code (for tq test condition)
8-t
q code
9- 0 = Eyelet terminals
1 = Fast-on terminals
dV/dt - tq combinations available
dV/dt (V/µs) 20 50 100 200 400
10
12
CN DN EN
tq (µs)
2 = Eyelet terminals
11
- Critical dV/dt:
None = 500 V/µs (standard value)
L = 1000 V/µs (special selection)
- P = Lead (Pb)-free
* Standard part number.
All other types available only on request.
15 CL DL EL FL* HL
FN* HN
CM DM EM FM HM
20 CK DK EK FK* HK
15
18
CL - -
20 CK DK EK FK* HK
--
CP DP - -
25 CJ DJ EJ FJ* HJ
up to 800 V
tq (µs)
only for
1000/1200 V 30 -DHEHFHHH
-
(see Voltage Ratings table)
(gate and auxiliary cathode unsoldered leads)
(gate and auxiliary cathode unsoldered leads)
(gate and auxiliary cathode soldered leads)
(gate and auxiliary cathode soldered leads)
Device code
51 324
6 7 8 9 10 11
ST 30 3 C 12 L H K 1 - P
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95076
Document Number: 95076 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 01-Aug-07 1
TO-200AC (B-PUK)
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
Pin receptacle
AMP. 60598-1
0.7 (0.03) MIN. 34 (1.34) DIA. MAX.
2 places
53 (2.09) DIA. MAX.
58.5 (2.3) DIA. MAX.
2 holes DIA. 3.5 (0.14) x 2.5 (0.1) deep
4.7 (0.18)
27 (1.06) MAX.
0.7 (0.03) MIN.
6.2 (0.24) MIN.
36.5 (1.44)
Creepage distance: 36.33 (1.430) minimum
Strike distance: 17.43 (0.686) minimum
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
20° ± 5°
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Revision: 02-Oct-12 1Document Number: 91000
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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