BFP540ESD NPN Silicon RF Transistor 3 Preliminary data 4 * For highest gain low noise amplifier at 1.8 GHz * Outstanding G ms = 21.0 dB 2 Noise Figure F = 0.9 dB * Gold metallization for high reliability * SIEGET 1 VPS05605 45 - Line * Exellent ESD performance typical value > 1000 V (HBM) ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP540ESD Marking AUs 1=B Pin Configuration 2=E 3=C 4=E - Package - SOT343 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value Unit V TA > 0C 4 TA 0C 3.5 Collector-emitter voltage VCES 12 Collector-base voltage VCBO 12 Emitter-base voltage VEBO 1 Collector current IC 80 Base current IB 8 Total power dissipation1) Ptot 250 mW Junction temperature Tj 150 C Ambient temperature TA -65 ... 150 Storage temperature T stg -65 ... 150 mA TS 77C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point 2) RthJS 290 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 2005-06-09 1 BFP540ESD Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. V(BR)CEO 4 4.5 - V ICES - - 10 A ICBO - - 100 nA IEBO - - 10 A hFE 50 110 185 - DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 12 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 20 mA, VCE = 3.5 V, pulse measured 2005-06-09 2 BFP540ESD Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT 25 34 - Ccb - 0.15 0.24 Cce - 0.41 - Ceb - 0.65 - GHz IC = 50 mA, VCE = 3.5 V, f = 1 GHz Collector-base capacitance pF VCB = 2 V, f = 1 MHz Collector emitter capacitance VCE = 2 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure dB F IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt - 0.9 1.4 IC = 5 mA, VCE = 2 V, f = 3 GHz, ZS = ZSopt - 1.3 - G ms - 21 - dB G ma - 15.5 - dB Power gain, maximum stable1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Power gain, maximum available1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt, f = 3 GHz |S21e|2 Transducer gain IC = 20 mA, VCE = 2 V, ZS = ZL = 50 , f = 1.8 GHz dB 16 18.5 - - 14 - IP 3 - 25 - P-1dB - 11.5 - IC = 20 mA, VCE = 2 V, ZS = ZL = 50 , f = 3 GHz Third order intercept point at output2) dBm VCE = 2 V, I C = 20 mA, f = 1.8 GHz, ZS = ZL = 50 1dB Compression point at output IC = 20 mA, VCE = 2 V, ZS = ZL = 50 , f = 1.8 GHz 1G 1/2 ma = |S21e / S12e| (k-(k-1) ), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz 2005-06-09 3 Package SOT343 BFP540ESD Package Outline 0.9 -0.1 2 -0.2 1.3 0.1 MAX. 1 2 0.1 1.25 -0.1 0.15 A 0.1 MIN. +0.2 acc. to DIN 6784 3 2.1 -0.1 4 0.3 +0.1 -0.05 +0.1 0.15 -0.05 +0.1 0.6 -0.05 4x 0.1 0.2 M M A Foot Print 1.6 0.8 0.6 1.15 0.9 Marking Layout Manufacturer Pin 1 Month May Year 2005 Type code BGA420 Example Packing Code E6327: Reel 180 mm = 3.000 Pieces/Reel Code E6433: Reel 330 mm = 10.000 Pieces/Reel 0.2 2.3 8 4 Pin 1 2.15 1.1 2005-06-09 4 BFP540ESD Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen (c) Infineon Technologies AG 2005. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.Infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2005-06-09 5