GaAs SPDT Switch
0.05 - 3 GHz
Rev. V1
MASWSS0176
1
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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1
Features
Low Insertion Loss: 0.35 dB @ 2.4 GHz
Moderate Isolation: 21 dB @ 2.4 GHz
Low Current Consumption: 5 µA @ 2.5 V
Lead-Free SOT-26 Package
100% Matte Tin Plating over Copper
Halogen-Free “Green” Mold Compound
260°C Reflow Compatible
RoHS* Compliant Version of MASWSS0005
Description
M/A-COM’s MASWSS0176 is a GaAs PHEMT
MMIC single pole, double throw (SPDT) switch in a
low cost, lead-free SOT-26 surface mount plastic
package. The MASWSS0176 is ideally suited for
applications where small size and low cost are
required.
Typical applications are dual band systems which
require switching between small signal components
such as filter banks, single-band LNAs, converters,
etc. This part can be used for low power, low loss
requirements in all systems operating up to 3 GHz,
including PCS, GSM, DCS, Satellite Radio, Blue
Tooth, and other receive chain applications.
The MASWSS0176 is fabricated using a 0.5 micron
gate length GaAs PHEMT process. The process
features full passivation for performance and
reliability.
Pin Configuration
Pin No. Function Description
1 RF1 RF Port 1
2 GND Ground
3 RF2 RF Port 2
4 V2 Control 2
5 RFC RF Input
6 V1 Control 1
Functional Schematic
Ordering Information 1
Part Number Package
MASWSS0176 Bulk Packaging
MASWSS0176TR-3000 3000 piece reel
MASWSS0176SMB Sample Board
1. Reference Application Note M513 for reel size information.
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
RF1 GND RF2
V1 RFC V2
PIN 1
C=39pF C=39pF
C=39pF
Absolute Maximum Ratings 2,3
Parameter Absolute Maximum
Input Power @ 2.5 V Control +26 dBm
Operating Voltage +8.5 V
Operating Temperature -40°C to +85°C
Storage Temperature -65°C to +150°C
2. Exceeding any one or combination of these limits may cause
permanent damage to this device.
3. M/A-COM does not recommend sustained operation near
these survivability limits.