TC4W66FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC4W66FU Dual Bilateral Switch The TC4W66FU contains two independence circuits of bidirectional switches. When control input CONT is set to "H" level, the impedance between input and output of the switch becomes low and when it is set to "L" level, the switch becomes high. This can be applied for switching of analog signals and digital signals. Features * ON-resistance, RON 250 (typ.) ................... VDD - VSS = 5 V (SM8) 110 (typ.) ................... VDD - VSS = 10 V Weight SSOP8-P-0.65 : 0.02 g (typ.) 70 (typ.)..................... VDD - VSS = 15 V * OFF-resistance, ROFF ROFF (typ.) > 109 Absolute Maximum Ratings (Ta = 25C) Characteristics Marking Symbol Rating Unit DC supply voltage VDD VSS - 0.5 to VSS + 20 V Control input voltage VC IN VSS - 0.5 to VDD + 0.5 V Switch I/O voltage VI/O VSS - 0.5 to VDD + 0.5 V Power dissipation PD 300 mW Potential difference across I/O during ON VI-VO 0.5 V Control input current IC IN 10 mA Operating temperature range Topr -40 to 85 C Storage temperature Tstg -65 to 150 C TL 260 C Lead temperature (10 s) Type Name 4W66 Lot No. Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2012-11-01 TC4W66FU Pin Assignment (top view) IN/OUT 1 1 8 OUT/IN 1 2 7 CONT 1 CONT 2 3 6 OUT/IN 2 VSS 4 5 IN/OUT 2 VDD Truth Table Control Logic Diagram Impedance Between IN/OUT-OUT/IN (Note 1) I/O 2 H 0.5 to 5 x 10 L >10 O/I 9 CONT Note 1: See static electrical characteristics. Operating Ranges (VSS = 0 V) Characteristics Symbol Test Condition Min Typ. Max Unit DC supply voltage VDD 3 18 V Input/output voltage VI/O 0 VDD V 2 2012-11-01 TC4W66FU Static Electrical Characteristics (VSS = 0 V) Ta = -40C Characteristics Control input high voltage Control input low voltage On-state resistance Symbol VIH VIL RON On-state resistance (between any 2 switches) RON Input/output leakage current IOFF Quiescent device current Control input current H level L level IDD IIH IIL Test Condition IIS = 10 A IIS = 10 A 0< = VIS < = VDD RL = 10 k VIN = 18 V, VOUT = 0 V VIN = 0 V, VOUT = 18 V VIN = VDD, VSS VIH = 18 V VIL = 0 V Ta = 25C Ta = 85C VDD (V) Min Max Min Typ. Max Min Max 5 3.5 3.5 2.75 3.5 10 7.0 7.0 5.50 7.0 15 11.0 11.0 8.25 11.0 5 1.5 2.25 1.5 1.5 10 3.0 4.5 3.0 3.0 15 4.0 6.75 4.0 4.0 5 800 290 950 1200 10 210 120 250 300 15 140 85 160 200 5 10 10 6 15 4 18 100 0.1 100 1000 18 100 0.1 100 1000 5 0.25 0.001 0.25 7.5 10 0.5 0.001 0.5 15 15 1.0 0.002 1.0 30 0.1 1.0 -0.1 -1.0 Unit V V nA 18 18 3 0.1 -0.1 10 -5 -5 -10 A A 2012-11-01 TC4W66FU Dynamic Electrical Characteristics (Ta = 25C) Characteristics Phase difference between input to output Propagation delay time (CONTROL-OUT) Propagation delay time (CONTROL-OUT) Max control input repetition Rate Frequency Response Symbol I-O Test Condition CL = 50 pF tpZL RL = 1 k tpZH CL = 50 pF tpLZ RL = 1 k tpHZ CL = 50 pF fMAX RL = 1 k (C) CL = 50 pF fMAX RL = 1 k (I-O) CL = 50 pF Total harmonic distortion Feed through frequency (Switch OFF) (Note 1) RL = 10 k VSS (V) VDD (V) Min Typ. Max Unit 0 5 15 40 0 10 8 20 0 15 5 15 0 5 55 120 0 10 25 40 0 15 20 30 0 5 45 80 0 10 30 70 0 15 25 60 0 5 10 0 10 12 0 15 12 -5 5 30 MHz -5 5 0.03 % ns ns ns MHz f = 1 kHz (Note 2) RL = 1 k (Note 3) -5 5 600 kHz Crosstalk frequency RL = 1 k (Note 4) -5 5 1 MHz Crosstalk (CONTROL-OUT) Input capacitance Feed through capacitance CIN RIN = 1 k 0 5 200 ROUT = 10 k 0 10 400 CL = 15 pF 0 15 600 Control input 5 7.5 Switch I/O 10 0.5 CIN-OUT Note 1: Since wave of 2.5 Vp-p shall be used for VIS and the frequency of 20 og 10 mV pF pF VOS = -3dB shall be fMAX. VIS Note 2: VIS shall be sine wave of 2.5 Vp-p. Note 3: Sine wave of 2.5 Vp-p shall be used for VIS and the frequency of 20 og 10 VOUT VIS = -50dB shall be VOUT VIS = -50dB shall be feed-through. Note 4: Sine wave of 2.5 Vp-p shall be used for VIS and the frequency of 20 og 10 crosstalk. 4 2012-11-01 TC4W66FU Circuit For Mersurment of Electrical Characteristics 1. tpLH, tpHL I/O-O/I tr =20 ns VDD tf =20 ns I/O P.G. 50% O/I I/O IN 50% 10% 10% tpLH CL = 50 pF C VDD 90% 90% tpHL 50% VSS VOH 50% O/I OUT VOL 2. tpZL, tpZH, tpLZ, tpHZ CONTROL-O/I tf =20 ns tr =20 ns VDD SW1 P.G. I/O O/I RL = 1 k CL = 50 pF C SW2 CONTROL IN 50% 50% 10% 10% tpZH O/IOUT. SW1 = VDD SW2 = VSS VSS tpHZ 90% VOH 50% VOL tpZL O/IOUT. SW1 = VSS SW2 = VDD 3. VDD 90% 90% tpLZ VOH 50% 10% VOL RON VDD RON calculation method VIN I/O O/I VOUT RON = 10 x RL = 10 k C (VIN - VOUT ) (k ) VOUT VSS 5 2012-11-01 TC4W66FU 4. fMAX (C) VDD tr =20 ns tf =20 ns 90% I/O P.G. O/I 50% CONTROL IN 10% RL = 1 k CL = 50 pF C VDD 90% 50% 1 f 10% VSS VDD 2 O/IOUT 5. Crosstalk frequency (SWITCH ON) VDD 2.5 V P.G. O/I I/O I/OIN 0V RL = 1 k C -2.5 V VSS (SWITCH OFF) VDD O/I I/O Crosstalk OUT RL = 1 k C VSS 6. Crosstalk (Control input) tr =20 ns VDD tf =20 ns 90% I/O P.G. C RL = 1 k O/I CONTROL IN VOUT 10% 90% 10% VDD VSS RL = 10 k CL = 15 pF VOUT 6 2012-11-01 TC4W66FU 7. Total Harmonic Distortion, fMAX (I/O-O/I), Feedthrough frequency(Switch OFFF) VDD 2.5 V P.G. O/I I/O I/OIN 0V RL ,CL (SEE TEST CONDITIONDS) C 1 f VSS 7 -2.5 V 2012-11-01 TC4W66FU Package Dimensions Weight: 0.02 g (typ.) 8 2012-11-01 TC4W66FU RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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