V23990-P180-A20-PM final data sheet (R) flowPIM 2, 75A/ 1200V V23990-P180-A20-01-14 Maximum Ratings / Hochstzulassige Werte Parameter Condition Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Ruckw. Spitzensperrspannung Forward current per diode Dauergrenzstrom Surge forward current Stostrom Grenzwert I2t-value DC current Grenzlastintegral Power dissipation per Diode Verlustleistung pro Diode Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current VRRM 1600 V IFAV A tp=10ms IFSM tp=10ms Tj=25C I2t 2810 A2s Tj=150C Th=80C Tc=80C Ptot 106 161 W VCE 1200 V 69 A Tj=150C Th=80C, tp=1ms Tc=80C Th=80C Icpuls Tj=150C Th=80C Ptot IC A 75 limited by nr. wires Tc=80C 138 A 144 W 219 VGE 20 V VGE=15V tSC 10 us Tj=150C Th=80C, IF 59 A tp=1ms Tc=80C Th=80C IFRM 118 A Ptot 95 144 W Gate-emitter peak voltage Gate-Emitter-Spitzenspannung SC withstand time Kurzschluverhalten Tj125C VCC=900V Diode Inverter Diode Wechselrichter DC forward current Dauergleichstrom Copyright by Vincotech Unit 92 99 limited by nr. wires 750 Verlustleistung pro IGBT Repetitive peak forward current Periodischer Spitzenstrom Power dissipation per Diode Verlustleistung pro Diode Datasheet values max. Th=80C; Tc=80C Tj=25C Kollektor-Dauergleichstrom Repetitive peak collector current Periodischer Kollektorspitzenstrom Power dissipation per IGBT Symbol Tj=150C Th=80C Tc=80C 1 75 limited by nr. wires Revision: 1 V23990-P180-A20-PM final data sheet (R) flowPIM 2, 75A/ 1200V V23990-P180-A20-01-14 Maximum Ratings / Hochstzulassige Werte Parameter Condition Symbol Transistor BRC Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current Tj=150C Th=80C Kollektor-Dauergleichstrom Tj=150C Repetitive peak collector current Periodischer Kollektorspitzenstrom Power dissipation per IGBT tp=1ms Tc=80C Th=80C Icpuls Tj=150C Th=80C Ptot VCE Gate-emitter peak voltage Gate-Emitter-Spitzenspannung SC withstand time Kurzschluverhalten Tj125C VGE=15V VCE=900 V Diode BRC Diode BRC DC forward current Tj=150C Th=80C Dauergleichstrom Tj=150C Repetitive peak forward current Periodischer Spitzenstrom Power dissipation per Diode Verlustleistung pro Diode tp=1ms Tc=80C Th=80C Tj=150C Th=80C Tc=80C Thermal properties Thermische Eigenschaften max. Chip temperature max. Chiptemperatur Storage temperature Lagertemperatur Operation temperature Betriebstemperatur Copyright by Vincotech t=1min 2 Unit 1200 V 40 limited by nr. wires A 40 limited by nr. wires Tc=80C Verlustleistung pro IGBT Insulation properties Modulisolation Insulation voltage Isolationsspannung Creepage distance Kriechstrecke Clearance Luftstrecke IC Datasheet values max. 86 A 97 W 147 VGE 20 V tSC 10 us 25 A IF 26 limited by nr. wires IFRM 50 A Ptot 46 69 W Tjmax 150 C Tstg -40...+125 C Top -40...+125 C Vis 4000 Vdc min 12,7 mm min 12,7 mm Revision: 1 V23990-P180-A20-PM final data sheet flowPIM(R) 2, 75A/ 1200V V23990-P180-A20-01-14 Characteristic values Description Symbol T(C) Input Rectifier Bridge Gleichrichter Forward voltage Durchlapannung Threshold voltage (for power loss calc. only) Schleusenspannung Slope resistance (for power loss calc. only) Ersatzwiderstand Reverse current Sperrstrom Thermal resistance chip to heatsink per chip Warmewiderstand Chip-Kuhlkorper pro Chip VF Vto rt Ir RthJH VGE(th) VCE(sat) ICES IGES Gekoppelte Warmewiderstand Wechselrichter Diode-Transistor Copyright by Vincotech VGE(V) VGS(V) Tj=25C Tj=150C Tj=25C Tj=125C Tj=25C Tj=125C Tj=25C Tj=150C IC(A) IF(A) Id(A) 75 td(on) tr td(off) tf Eon Eoff Cies Coss Crss QGate RthJH RthJH Min Typ Max 0,8 1,14 1,09 0,89 0,78 0,003 0,004 1,5 75 75 1500 Thermal grease thickness50um 0,66 Warmeleitpaste Dicke50um = 0,61 W/mK 0,44 VCE=VGE 0,003 15 Rgoff=10 Ohm Rgon=10 Ohm Rgoff=10 Ohm Rgon=10 Ohm Rgoff=10 Ohm Rgon=10 Ohm Rgoff=10 Ohm Rgon=10 Ohm Rgoff=10 Ohm Rgon=10 Ohm Rgoff=10 Ohm Rgon=10 Ohm f=1MHz V V Ohm 75 mA K/W 5 5,8 6,5 V 1,3 1,82 2,11 2,35 V 0 1200 0,5 mA 20 0 680 nA 10 Tj=25C Tj=125C Tj=25C Tj=125C Tj=25C Tj=125C Tj=25C Tj=125C Tj=25C Tj=125C Tj=25C Tj=125C Tj=25C Tj=125C Tj=25C Tj=125C Tj=25C Tj=125C Tj=25C Tj=125C Unit 0,05 10 Rgint Thermal resistance chip to case per chip Warmewiderstand Chip-Gehause pro Chip Coupled thermal resistance inverter diode-transistor Other conditions (Rgon-Rgoff) VR(V) VCE(V) VDS(V) Tj=25C Tj=125C Tj=25C Tj=150C Tj=25C Tj=150C Tj=25C Tj=150C Thermal resistance chip to case per chip Warmewiderstand Chip-Gehause pro Chip Transistor Inverter, inductive load Transistor Wechselrichter Gate emitter threshold voltage Gate-Schwellenspannung Collector-emitter saturation voltage Kollektor-Emitter Sattigungsspannung Collector-emitter cut-off Kollektor-Emitter Reststrom Gate-emitter leakage current Gate-Emitter Reststrom Integrated Gate resistor Integrirter Gate Widerstand Turn-on delay time Einschaltverzogerungszeit Rise time Anstiegszeit Turn-off delay time Abschaltverzogerungszeit Fall time Fallzeit Turn-on energy loss per pulse Einschaltverlustenergie pro Puls Turn-off energy loss per pulse Abschaltverlustenergie pro Puls Input capacitance Eingangskapazitat Output capacitance Ausgangskapazitat Reverse transfer capacitance Ruckwirkungskapazitat Gate charge Gate Ladung Thermal resistance chip to heatsink per chip Warmewiderstand Chip-Kuhlkorper pro Chip Datasheet values Conditions Ohm ns 15 600 75 325 15 600 75 31 15 600 75 576 15 600 75 200 15 600 75 9,283 15 75 0 600 25 8,226 4,7 nF f=1MHz 0 25 1 nF f=1MHz 0 25 0,9 nF 700 nC Thermal grease thickness50um 0,49 K/W Warmeleitpaste Dicke50um = 0,61 W/mK 0,32 Thermal grease thickness50um 0,25 ns ns ns mWs mWs 15 Warmeleitpaste Dicke50um = 0,61 W/mK 3 Revision: 1 K/W V23990-P180-A20-PM final data sheet flowPIM(R) 2, 75A/ 1200V V23990-P180-A20-01-14 Characteristic values Description Symbol T(C) Diode Inverter Diode Wechselrichter Diode forward voltage Durchlaspannung Peak reverse recovery current Ruckstromspitze Reverse recovery time Sperreverzogerungszeit Reverse recovered charge Sperrverzogerungsladung Reverse recovered energy Sperrverzogerungsenergie Thermal resistance chip to heatsink per chip Warmewiderstand Chip-Kuhlkorper pro Chip VF IRM trr Qrr Erec Datasheet values Conditions Tj=25C Tj=125C Tj=25C Tj=125C Tj=25C Tj=125C Tj=25C Tj=125C Tj=25C Tj=125C RthJH Other conditions (Rgon-Rgoff) VR(V) VCE(V) VDS(V) VGE(V) VGS(V) IC(A) IF(A) Id(A) 75 Min Typ Max 1 1,73 1,78 2,4 15 600 75 108 diF/dt = 2625 A/us 15 600 75 430 diF/dt = 2625 A/us 15 600 75 14,68 diF/dt = 2625 A/us Thermal grease thickness50um 15 600 75 5,299 ns uC mWs 0,74 Warmeleitpaste Dicke50um = 0,61 W/mK 0,50 Coupled thermal resistance inverter transistor-diode Thermal grease thickness50um 0,25 Gekoppelte Warmewiderstand Wechselrichter Transistor-Diode Transistor BRC Transistor BRC Gate emitter threshold voltage Gate-Schwellenspannung Collector-emitter saturation voltage Kollektor-Emitter Sattigungsspannung Collector-emitter cut-off Kollektor-Emitter Reststrom Gate-emitter leakage current Gate-Emitter Reststrom Integrated Gate resistor Integrirter Gate Widerstand Turn-on delay time Einschaltverzogerungszeit Rise time Anstiegszeit Turn-off delay time Abschaltverzogerungszeit Fall time Fallzeit Turn-on energy loss per pulse Einschaltverlustenergie pro Puls Turn-off energy loss per pulse Abschaltverlustenergie pro Puls Input capacitance Eingangskapazitat Output capacitance Ausgangskapazitat Reverse transfer capacitance Ruckwirkungskapazitat Gate charge Gate Ladung Thermal resistance chip to heatsink per chip Warmewiderstand Chip-Kuhlkorper pro Chip Thermal resistance chip to case per chip Warmewiderstand Chip-Gehause pro Chip Copyright by Vincotech V A diF/dt = 2625 A/us Thermal resistance chip to case per chip Warmewiderstand Chip-Gehause pro Chip RthJH Unit K/W K/W Warmeleitpaste Dicke50um = 0,61 W/mK VGE(th) VCE(sat) ICES IGES Tj=25C Tj=150C Tj=25C Tj=125C Tj=25C Tj=125C Tj=25C Tj=150C VCE=VGE 0,0015 15 35 tr td(off) tf Eon Eoff Ciss Coss Cies Qgate RthJH 5,8 6,5 V 1,3 1,71 1,92 2,2 V 0 1200 0,25 mA 20 0 680 nA Rgint td(on) 5 6 Tj=25C Tj=125C Tj=25C Tj=125C Tj=25C Tj=125C Tj=25C Tj=125C Tj=25C Tj=125C Tj=25C Tj=125C Tj=25C Tj=125C Tj=25C Tj=125C Tj=25C Tj=125C Tj=25C Tj=125C Rgoff=28 Ohm Rgon=28 Ohm Rgoff=28 Ohm Rgon=28 Ohm Rgoff=28 Ohm Rgon=28 Ohm Rgoff=28 Ohm Rgon=28 Ohm Rgoff=28 Ohm Rgon=28 Ohm Rgoff=28 Ohm Rgon=28 Ohm f=1MHz Ohm ns 15 600 35 80,2 15 600 35 34 15 600 35 480 15 600 35 167,7 15 600 35 4,53 15 35 0 600 25 3,65 2,4 nF f=1MHz 0 25 0,5 nF f=1MHz 0 25 0,4 nF 330 nC Thermal grease thickness50um 0,72 K/W Warmeleitpaste Dicke50um = 0,61 W/mK 0,48 ns ns ns mWs mWs 15 4 Revision: 1 V23990-P180-A20-PM final data sheet flowPIM(R) 2, 75A/ 1200V V23990-P180-A20-01-14 Characteristic values Description Symbol T(C) Diode BRC Diode BRC Diode forward voltage Durchlaspannung Reverse current Sperrstrom Reverse recovery time Sperreverzogerungszeit Reverse recovered charge Sperrverzogerungsladung Reverse recovery energy Sperrverzogerungsenergie Thermal resistance chip to heatsink per chip Warmewiderstand Chip-Kuhlkorper pro Chip VF Ir trr Qrr Erec Tj=25C Tj=125C Tj=25C Tj=125C Tj=25C Tj=125C Tj=25C Tj=125C Tj=25C Tj=125C RthJH Thermal resistance chip to case per chip Warmewiderstand Chip-Gehause pro Chip NTC-Thermistor NTC-Widerstand Rated resistance Nennwiderstand Deviation of R100 Abweichung von R100 Power dissipation given Epcos-Typ Verlustleistung Epcos-Typ angeben B-value B-Wert Copyright by Vincotech Datasheet values Conditions Other conditions (Rgon-Rgoff) VGE(V) VGS(V) VR(V) VCE(V) VDS(V) IC(A) IF(A) Id(A) 35 Unit Min Typ Max 1 2,01 2,09 2,3 V 250 uA 1200 ns diF/dt = 909 A/us 15 600 35 545,1 diF/dt = 909 A/us 15 600 35 5,14 diF/dt = 909 A/us Thermal grease thickness50um 15 600 35 1,83 uC mWs 1,53 Warmeleitpaste Dicke50um = 0,61 W/mK K/W 1,01 R25 Tj=25C DR/R Tc=100C R100=1486Ohm 2,9 %/K P Tj=25C 210 mW B(25/100) Tj=25C 4000 K 17,5 Tol. 3% 5 22 29 kOhm Revision: 1 V23990-A180-A20-PM final data sheet flowPIM (R) 2, 75A/ 1200V V23990-P180-A20-01-14 Output inverter Figure 1. Typical output characteristics Output inverter IGBT Figure 2. Typical output characteristics Output inverter IGBT Ic= f(VCE) Ic= f(VCE) 160 IC (A) IC (A) 160 140 140 120 120 100 100 80 80 60 60 40 40 20 20 0 0 0 1 2 3 4 VCE (V) 5 0 1 2 3 4 VCE (V) parameter: tp = 250 ms Tj = 25 C VGE parameter: from: 7 V to 17 V in 1 V steps parameter: tp = 250 ms Tj = 125 C VGE parameter: from: 7 V to 17 V in 1 V steps Figure 3. Figure 4. Typical transfer characteristics Output inverter IGBT Ic= f(VGE) 5 Typical diode forward current as a function of forward voltage IF=f(VF) Output inverter FRED 160 IF (A) IC (A) 100 90 140 80 120 70 25 oC 125 oC 100 60 50 80 40 60 30 125 oC 40 25 oC 20 20 10 0 0 0 2 10 V GE (V)12 parameter: tp = 250 ms VCE = 10 V 4 6 Copyright by Vincotech 8 0 0,5 1 1,5 2 2,5 3 VF (V) 3,5 parameter: tp = 250 ms 6 Revision: 1 V23990-A180-A20-PM final data sheet flowPIM (R) 2, 75A/ 1200V V23990-P180-A20-01-14 Output inverter Figure 5. Typical switching energy losses as a function of collector current Output inverter IGBT Figure 6. Typical switching energy losses as a function of gate resistor Output inverter IGBT E = f (RG) E = f (Ic) 21 E (mWs) E (mWs) 21 Eon 18 18 Eon 15 15 Eoff 12 12 Eoff 9 9 Erec 6 6 Erec 3 3 0 0 0 20 40 60 80 100 120 I C (A) 140 0 10 20 30 inductive load, Tj = 125 C VCE = 600 V VGE= 15 V Rgon= 10 Rgoff= 10 inductive load, Tj = 125 C VCE = 600 V VGE= 15 V Ic = 75 A Figure 7. Figure 8. Typical switching times as a function of collector current Output inverter IGBT 50 R G ( : ) 60 40 Typical switching times as a function of gate resistor Output inverter IGBT t = f (RG) t = f (Ic) 10 1 t ( Ps) t ( Ps) tdoff tdon tdoff 1 tf tdon 0,1 tf 0,1 tr tr 0,01 0,01 0,001 0,001 0 20 40 60 80 100 120 IC (A) 140 0 inductive load, Tj = 125 C VCE = 600 V VGE= 15 V Rgon= 10 Rgoff= 10 Copyright by Vincotech 10 20 30 40 50 R G ( : ) 60 inductive load, Tj = 125 C VCE = 600 V VGE= 15 V Ic = 75 A 7 Revision: 1 V23990-A180-A20-PM final data sheet flowPIM (R) 2, 75A/ 1200V V23990-P180-A20-01-14 Output inverter Figure 9. Typical reverse recovery time as a function of IGBT turn on gate resistor Output inverter FRED diode Figure 10. Typical reverse recovery current as a function of IGBT turn on gate resistor Output inverter FRED diode trr = f (Rgon) IRRM = f (Rgon) 140 t rr( Ps) IrrM (A) 0,8 0,7 120 0,6 100 0,5 80 0,4 60 0,3 40 0,2 20 0,1 0 0 0 10 Tj = VR = IF= 20 30 40 50 R Gon ( : ) 60 0 10 125 C 600 V 75 A Tj = VR = IF= Figure 11. Typical reverse recovery charge as a function of IGBT turn on gate resistor Output inverter FRED diode 20 30 40 50 R Gon ( : ) 60 125 C 600 V 75 A Figure 12. Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor Output inverter FRED diode dI0/dt,dIrec/dt= f (Rgon) Qrr = f (Rgon) 16 direc / dt (A/ Ps) Qrr ( PC) 3600 3200 14 2800 12 2400 10 dI0/dt 2000 8 1600 dIrec/dt 6 1200 4 800 2 400 0 0 0 10 Tj = VR = IF= 20 30 40 50 R Gon ( :) 60 0 125 C 600 V 75 A Copyright by Vincotech 10 Tj = VR = IF= 8 20 30 40 50 R Gon ( :)60 125 C 600 V 75 A Revision: 1 V23990-A180-A20-PM final data sheet flowPIM (R) 2, 75A/ 1200V V23990-P180-A20-01-14 Output inverter Figure 13. IGBT transient thermal impedance as a function of pulse width Figure 14. FRED transient thermal impedance as a function of pulse width ZthJH = f(tp) ZthJH = f(tp) 0 0 10 ZthJH (K/W) ZthJH (K/W) 10 10-1 -1 10 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 -2 -2 10 10 10-5 10-4 10-3 10-2 Parameter: D = tp / T 10-1 100 t p (s) 101 10-5 RthJH= 0,49 K/W 10-4 10-3 10-2 Parameter: D = tp / T IGBT thermal model values FRED thermal model values R (C/W) R (C/W) 0,06 0,11 0,12 0,14 0,05 0,02 Tau (s) 1,9E+01 2,0E+00 4,0E-01 5,0E-02 1,4E-02 5,5E-04 Copyright by Vincotech 0,06 0,14 0,17 0,29 0,07 0,04 9 10-1 100 t p (s) 101 RthJH= 0,74 K/W Tau (s) 1,9E+01 1,6E+00 2,7E-01 3,7E-02 8,4E-03 4,5E-04 Revision: 1 V23990-A180-A20-PM final data sheet flowPIM (R) 2, 75A/ 1200V V23990-P180-A20-01-14 Output inverter Figure 15. Power dissipation as a function of heatsink temperature Output inverter IGBT Figure 16. Collector current as a function of heatsink temperature Output inverter IGBT Ptot = f (Th) Ic = f (Th) 80 IC (A) Ptot (W) 350 70 300 60 250 50 200 40 150 30 100 20 50 10 0 0 0 50 100 150 o Th ( C) 0 200 50 100 150 o Th ( C) 200 parameter: Tj = 150C parameter: Tj = 150C VGE= 30 V Figure 17. Power dissipation as a function of heatsink temperature Output inverter FRED Figure 18. Forward current as a function of heatsink temperature Output inverter FRED Ptot = f (Th) IF = f (Th) 225 IF (A) Ptot (W) 80 200 70 175 60 150 50 125 40 100 30 75 20 50 10 25 0 0 0 50 100 150 Th ( o C) 200 0 100 150 o Th ( C) 200 parameter: Tj = 150C parameter: Tj = 150C Copyright by Vincotech 50 10 Revision: 1 V23990-A180-A20-PM final data sheet flowPIM (R) 2, 75A/ 1200V V23990-P180-A20-01-14 Brake Figure 19. Typical output characteristics Brake IGBT Figure 20. Typical output characteristics Brake IGBT Ic= f(VCE) Ic= f(VCE) 80 IC (A) IC (A) 80 70 70 60 60 50 50 40 40 30 30 20 20 10 10 0 0 0 1 2 3 parameter: tp = 250 ms VGE parameter: from: V CE (V) 4 5 0 Tj = 25 C 7 V to 17 V in 1 V steps 1 2 parameter: tp = 250 ms VGE parameter: from: Figure 21. Typical transfer characteristics Brake IGBT 3 4 V CE (V) 5 Tj = 125 C 7 V to 17 V in 1 V steps Figure 22. Typical diode forward current as a function of forward voltage IF=f(VF) Brake FRED Ic= f(VGE) 80 IF (A) IC (A) 60 25 o C 70 50 o 25 C 60 o 125 C 40 50 125 o C 40 30 30 20 20 10 10 0 0 0 2 4 6 parameter: tp = 250 ms Copyright by Vincotech 8 10 VCE = 12 V GE (V)14 0 10 V 0,5 1 1,5 2 2,5 3 V F (V) 3,5 parameter: tp = 250 ms 11 Revision: 1 V23990-A180-A20-PM final data sheet flowPIM (R) 2, 75A/ 1200V V23990-P180-A20-01-14 Brake Figure 23. Typical switching energy losses as a function of collector current Brake IGBT Figure 24. Typical switching energy losses as a function of gate resistor Brake IGBT E = f (RG) E = f (Ic) E (mWs) Eon E (mWs) 10 12 Eon 8 9 6 6 Eoff Eoff 4 3 Erec Erec 2 0 0 0 10 20 30 40 50 0 60 I C (A) 70 20 40 60 80 100 R G ( : )120 inductive load, Tj = 125 C VCE = 600 V VGE= 30 V Rgon = 28 Rgoff = 28 inductive load, Tj = 125 C VCE = 600 V VGE= 30 V Ic = 35 A Figure 25. Typical switching times as a function of collector current Brake IGBT Figure 26. Typical switching times as a function of gate resistor Brake IGBT t = f (RG) t = f (Ic) 1 t ( Ps) t ( Ps) 10 tdoff 1 tf tdoff tdon 0,1 tdon tf tr 0,1 tr 0,01 0,01 0,001 0,001 0 10 20 30 40 50 60 IC (A) 70 0 inductive load, Tj = 125 C VCE = 600 V VGE= 30 V Rgon = 28 Rgoff = 28 Copyright by Vincotech 20 40 60 80 100 R G ( : )120 inductive load, Tj = 125 C VCE = 600 V VGE= 30 V Ic = 35 A 12 Revision: 1 V23990-A180-A20-PM final data sheet flowPIM (R) 2, 75A/ 1200V V23990-P180-A20-01-14 Brake Figure 27. IGBT transient thermal impedance as a function of pulse width Figure 28. FRED transient thermal impedance as a function of pulse width ZthJH = f(tp) 0 1 10 ZthJH (K/W) ZthJH (K/W) 10 ZthJH = f(tp) 100 10 -1 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 10-2 10-2 10-5 10-4 10-3 10-2 10-1 100 t p (s) 101 10-5 RthJH= 0,72 K/W Parameter: D = tp / T 10-4 10-3 10-2 Parameter: D = tp / T Figure 29. Power dissipation as a function of heatsink temperature Brake IGBT 10-1 100 101 t p (s) RthJH= 1,53 K/W Figure 30. Collector current as a function of heatsink temperature Brake IGBT Ptot = f (Th) Ic = f (Th) 220 IC (A) Ptot (W) 45 200 40 180 35 160 30 140 120 25 100 20 80 15 60 10 40 5 20 0 0 0 50 100 150 Th ( o C) 200 0 parameter: Tj = 150C Copyright by Vincotech 50 100 150 o Th ( C) 200 parameter: Tj = 150C VGE= 30 V 13 Revision: 1 V23990-A180-A20-PM final data sheet flowPIM (R) 2, 75A/ 1200V V23990-P180-A20-01-14 Brake Figure 31. Power dissipation as a function of heatsink temperature Brake FRED Figure 32. Forward current as a function of heatsink temperature Brake FRED Ptot = f (Th) IF = f (Th) 110 IF (A) Ptot (W) 35 100 30 90 80 25 70 20 60 50 15 40 10 30 20 5 10 0 0 0 50 100 150 Th ( o C) 0 200 parameter: Tj = 150C Copyright by Vincotech 50 100 150 Th ( o C) 200 parameter: Tj = 150C 14 Revision: 1 V23990-A180-A20-PM final data sheet flowPIM (R) 2, 75A/ 1200V V23990-P180-A20-01-14 Input rectifier bridge Figure 33. Typical diode forward current as a function of forward voltage IF=f(VF) Rectifier diode Figure 34. Diode transient thermal impedance as a function of pulse width ZthJH = f(tp) 0 160 ZthJC (K/W) IF (A) 10 140 120 100 25C 10-1 80 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 125C 60 40 20 0 10-2 0 0,25 0,5 0,75 1,25 VF (V) 1,5 1 10-5 10-4 10-3 10-2 10-1 100 t p (s) 101 parameter: tp = 250 ms Parameter: D = tp / T Figure 35. Power dissipation as a function of heatsink temperature Rectifier diode Figure 36. Forward current as a function of heatsink temperature Rectifier diode Ptot = f (Th) RthJH= 0,66 K/W IF = f (Th) 250 IF (A) Ptot (W) 110 100 225 90 200 80 175 70 150 60 125 50 100 40 75 30 50 20 25 10 0 0 0 50 100 150 o Th ( C) 200 0 parameter: Tj = 150C Copyright by Vincotech 50 100 150 o Th ( C) 200 parameter: Tj = 150C 15 Revision: 1 V23990-A180-A20-PM final data sheet flowPIM (R) 2, 75A/ 1200V V23990-P180-A20-01-14 Thermistor Figure 37. Typical NTC characteristic as afunction of temperature RT = f (T) NTC-typical temperature characteristic R() 25000 20000 15000 10000 5000 0 25 50 75 Copyright by Vincotech 100 125 T (C) 150 16 Revision: 1