NTA4151PT1G - ON Semiconductor

September, 2006 − Rev. 5 1Publication Order Number:

NTA4151P/D

NTA4151P, NTE4151P

Small Signal MOSFET

−20 V, −760 mA, Single P−Channel,

Gate Zener, SC−75, SC−89

Features

•Low RDS(on) for Higher Efficiency and Longer Battery Life

•Small Outline Package (1.6 x 1.6 mm)

•SC−75 Standard Gullwing Package

•ESD Protected Gate

•Pb−Free Packages are Available

Applications

•High Side Load Switch

•DC−DC Conversion

•Small Drive Circuits

•Battery Operated Systems such as Cell Phones, PDAs, Digital

Cameras, etc.

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter Symbol Value Units

Drain−to−Source Voltage VDSS −20 V

Gate−to−Source Voltage VGS ±6.0 V

Continuous Drain Current

(Note 1) Steady State ID−760 mA

Power Dissipation (Note 1)

SC−75

SC−89 Steady State PD301

313

Pulsed Drain Current tp =10 msIDM ±1000 mA

Operating Junction and Storage Temperature TJ,

TSTG −55 to

150 °C

Continuous Source Current (Body Diode) IS−250 mA

Lead Temperature for Soldering Purposes

(1/8 in from case for 10 s) TL260 °C

Gate−to−Source ESD Rating −

(Human Body Model, Method 3015) ESD 1800 V

THERMAL RESISTANCE RATINGS

Junction−to−Ambient − Steady State (Note 1)

SC−75

SC−89

RqJA 415

400

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq

[1 oz] including traces).

MARKING DIAGRAM

& PIN ASSIGNMENT

http://onsemi.com

xx = Device Code

M = Date Code*

G= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

RDS(on) TYP ID MAXV(BR)DSS

0.26 W @ −4.5 V

−20 V 0.35 W @ −2.5 V −760 mA

0.49 W @ −1.8 V

P−Channel MOSFET

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

SC−75 / SOT−416

CASE 463

STYLE 5

Drain

Source

SC−89

CASE 463C

xx M G

Gate

NTA4151P, NTE4151P

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA−20 V

Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = −16 V −1.0 −100 nA

Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±4.5 V$1.0 $10 mA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage VGS(TH) VDS = VGS, ID = −250 mA−0.45 V

Drain−to−Source On Resistance RDS(on) VGS = −4.5 V, ID = −350 mA 0.26 0.36 W

VGS = −2.5 V, ID = −300 mA 0.35 0.45

VGS = −1.8 V, ID = −150 mA 0.49 1.0

Forward Transconductance gFS VDS = −10 V, ID = −250 mA 0.4 S

CHARGES AND CAPACITANCES

Input Capacitance CISS VGS = 0 V, f = 1.0 MHz,

VDS = −5.0 V156 pF

Output Capacitance COSS 28

Reverse Transfer Capacitance CRSS 18

Total Gate Charge QG(TOT) VGS = −4.5 V, VDD = −10 V,

ID = −0.3 A 2.1 nC

Threshold Gate Charge QG(TH) 0.125

Gate−to−Source Charge QGS 0.325

Gate−to−Drain Charge QGD 0.5

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time td(ON) VGS = −4.5 V, VDD = −10 V,

ID = −200 mA, RG = 10 W8.0 ns

Rise Time tr8.2

Turn−Off Delay Time td(OFF) 29

Fall Time tf20.4

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage VSD VGS = 0 V, IS = −250 mA −0.72 −1.1 V

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

ORDERING INFORMATION

Device Marking Package Shipping†

NTA4151PT1 TN SC−75 3000/Tape & Reel

NTA4151PT1G TN SC−75

(Pb−Free) 3000/Tape & Reel

NTE4151PT1G TM SC−89

(Pb−Free) 3000/Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

NTA4151P, NTE4151P

http://onsemi.com

TYPICAL ELECTRICAL CHARACTERISTICS

100

150

200

250

04812162

0.1

0.2

0.3

0.4

0.5

0.6

0 0.1 0.2 0.3 0.4 0.5 0.6 0

−ID, DRAIN CURRENT (AMPS)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

TJ = 125°C

VGS = −2.5 V

TJ = −55°C

TJ = 25°C

0.6

0.8

1.0

1.2

1.4

1.6

−50 −25 0 25 50 75 100 125 150

0.1

0.2

0.3

0.4

0.5

0.6

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0 0.5 1.0 1.5 2.0 2.5 3.0 0

0.1

0.2

0.3

0.4

0.5

0.6

0 0.4 0.8 1.2 1.6 2

Figure 1. On−Region Characteristics

−1.0 V

−1.25 V

−1.5 V

VGS = −1.75 V to −4.5 V

TJ = 25°C

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

−I

DRAIN CURRENT (AMPS)

Figure 2. Transfer Characteristics

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

−ID, DRAIN CURRENT (AMPS)

TJ = −55°C

TJ = 25°C

VDS w −10 V

TJ = 125°C

Figure 3. On−Resistance vs. Drain Current and

Temperature

−ID, DRAIN CURRENT (AMPS)

DS(on),

DRAIN−TO−SOURCE RESISTANCE (

)

TJ = 125°C

VGS = −4.5 V

TJ = −55°C

TJ = 25°C

Figure 4. On−Resistance vs. Drain Current and

Temperature

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

ID = − 0.35 A

VGS = −4.5 V

DS(on),

DRAIN−TO−SOURCE

RESISTANCE (NORMALIZED)

Figure 6. Capacitance Variation

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

C, CAPACITANCE (pF)

TJ = 25°C

CISS

COSS

CRSS

NTA4151P, NTE4151P

http://onsemi.com

TYPICAL ELECTRICAL CHARACTERISTICS

−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

−IS, SOURCE CURRENT (AMPS)

VGS = 0 V

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0 0.2 0.4 0.6 0.8 1.0

0 1.6

QG, TOTAL GATE CHARGE (nC)

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

1.2

0.4

Figure 7. Gate−to−Source Voltage vs. Total

Gate Charge

0.8

VDS = −10 V

ID = −0.3 A

TA = 25°C

2.0 2.4

TJ = 25°C

TJ = 125°C

Figure 8. Diode Forward Voltage vs. Current

QGS QGD

0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000

0.001

0.01

0.1

1.0

r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE

t, TIME (s)

Figure 9. Normalized Thermal Response

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

NTA4151P, NTE4151P

http://onsemi.com

PACKAGE DIMENSIONS

SC−75/SOT−416

CASE 463−01

ISSUE F

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

0.20 (0.008) D

−E−

−D−

3 PL

0.20 (0.008) E

STYLE 5:

PIN 1. GATE

2. SOURCE

3. DRAIN

DIM MIN NOM MAX

MILLIMETERS

A0.70 0.80 0.90

A1 0.00 0.05 0.10

C0.10 0.15 0.25

D1.55 1.60 1.65

e1.00 BSC

0.027 0.031 0.035

0.000 0.002 0.004

0.004 0.006 0.010

0.059 0.063 0.067

0.04 BSC

MIN NOM MAX

INCHES

0.15 0.20 0.30 0.006 0.008 0.012

L0.10 0.15 0.20

1.50 1.60 1.70 0.004 0.006 0.008

0.061 0.063 0.065

0.70 0.80 0.90 0.027 0.031 0.035

0.787

0.031

0.508

0.020 1.000

0.039

ǒmm

inchesǓ

SCALE 10:1

0.356

0.014

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

1.803

0.071

NTA4151P, NTE4151P

http://onsemi.com

CASE 463C−03

ISSUE C

SC−89, 3 LEAD

0.08 (0.003) X

D3 PL

−X−

−Y−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD THICKNESS

IS THE MINIMUM THICKNESS OF BASE

MATERIAL.

4. 463C−01 OBSOLETE, NEW STANDARD 463C−02.

2 PL

−T− SEATING

PLANE

DIM

AMIN NOM MIN NOM

INCHES

1.50 1.60 1.70 0.059

MILLIMETERS

B0.75 0.85 0.95 0.030

C0.60 0.70 0.80 0.024

D0.23 0.28 0.33 0.009

G0.50 BSC

H0.53 REF

J0.10 0.15 0.20 0.004

K0.30 0.40 0.50 0.012

L1.10 REF

M−−− −−− 10 −−−

N−−− −−− 10 −−−

S1.50 1.60 1.70 0.059

0.063 0.067

0.034 0.040

0.028 0.031

0.011 0.013

0.020 BSC

0.021 REF

0.006 0.008

0.016 0.020

0.043 REF

−−− 10

0.063 0.067

MAX MAX

SOLDERING FOOTPRINT*

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its of ficers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

NTA4151P/D

PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5773−3850

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your local

Sales Representative