BCW66 series
45 V, 800 mA NPN general-purpose transistor
Rev. 1 — 21 April 2017 Product data sheet
1 General description
NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device
(SMD) plastic package.
PNP complements: BCW68F/G/H
2 Features and benefits
High current
AEC-Q101 qualified
3 Applications
General-purpose switching and amplification
4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - 45 V
ICcollector current - - 800 mA
ICM peak collector current single pulse; tp ≤ 1 ms - - 1 A
DC current gain
BCW66F 100 - 250
BCW66G 160 - 400
hFE
BCW66H
VCE = 1 V; IC = 100 mA; Tamb = 25 °C [1]
250 - 600
[1] pulsed: tp ≤ 300 μs, δ ≤ 0.02
Nexperia BCW66 series
45 V, 800 mA NPN general-purpose transistor
BCW66x_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved.
Product data sheet Rev. 1 — 21 April 2017
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5 Pinning information
Table 2. Pinning
Pin Symbol Description Simplified outline Graphic symbol
1 B base
2 E emitter
3 C collector
1 2
3
sym123
C
E
B
6 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BCW66F
BCW66G
BCW66H
TO-236AB plastic surface-mounted package; 3 leads SOT23
7 Marking
Table 4. Marking
Type number Marking code
BCW66F [1] EQ%
BCW66G [1] ER%
BCW66H [1] ES%
[1] % = placeholder for manufacturing site code
8 Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 45 V
VEBO emitter-base voltage open collector - 5 V
ICcollector current - 800 mA
ICM peak collector current single pulse; tp ≤ 1 ms - 1 A
IBbase current - 100 mA
Nexperia BCW66 series
45 V, 800 mA NPN general-purpose transistor
BCW66x_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved.
Product data sheet Rev. 1 — 21 April 2017
3 / 14
Symbol Parameter Conditions Min Max Unit
IBM peak base current single pulse; tp ≤ 1 ms - 200 mA
Ptot total power dissipation Tamb ≤ 25 °C [1] - 250 mW
Tjjunction temperature - 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
[1] Device mounted on an FR4 Printed-Circuit-Board (PCB), single-sided chopper, tin-plated and standard footprint.
Tamb (°C)
-75 17512525 75-25
aaa-026537
200
100
300
400
Ptot
(mW)
0
FR4 PCB, standard footprint
Figure 1. Power derating curve
9 Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from junction
to ambient
in free air [1] - - 500 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Nexperia BCW66 series
45 V, 800 mA NPN general-purpose transistor
BCW66x_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved.
Product data sheet Rev. 1 — 21 April 2017
4 / 14
aaa-026538
10-5 1010-2
10-4 102
10-1
tp (s)
10-3 103
1
102
10
103
Zth(j-a)
(K/W)
1
duty cycle = 1
0
0.01
0.02
0.75
0.50
0.33
0.20
0.10
0.05
FR4 PCB, standard footprint
Figure 2. Transient thermal impedance from junction to ambient as a function of pulse
duration; typical values
10 Electrical characteristics
Table 7. Electrical characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VCB = 40 V; IE = 0 A - - 20 nAICBO collector-base
cut-off current VCB = 40 V; IE = 0 A; Tj = 150 °C - - 5 μA
IEBO emitter-base
cut-off current
VEB = 5 V; IC = 0 A - - 20 nA
DC current gain
BCW66F/G/H VCE = 1 V; IC = 100 μA 75 - -
BCW66F/G/H VCE = 1 V; IC = 1 mA 75 - -
BCW66F/G/H VCE = 1 V; IC = 10 mA 75 - -
BCW66F [1] 100 - 250
BCW66G [1] 160 - 400
BCW66H
VCE = 1 V; IC = 100 mA
[1] 250 - 630
hFE
BCW66F/G/H VCE = 1 V; IC = 500 mA [1] 40 - -
IC = 100 mA; IB = 10 mA [1] - - 350 mVVCEsat collector-emitter
saturation voltage IC = 500 mA; IB = 50 mA [1] - - 450 mV
IC = 100 mA; IB = 10 mA [1] - - 1.25 VVBEsat base-emitter
saturation voltage IC = 500 mA; IB = 50 mA [1] - - 1.25 V
fTtransition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz 100 - - MHz
Cccollector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz - 3 - pF
[1] pulsed; tp≤ 300 μs; δ ≤ 0.02
Nexperia BCW66 series
45 V, 800 mA NPN general-purpose transistor
BCW66x_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved.
Product data sheet Rev. 1 — 21 April 2017
5 / 14
Table 8.
006aaa131
200
100
300
400
hFE
0
IC(mA)
10- 1 103
102
1 10
(1)
(2)
(3)
VCE = 1 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Figure 3. BCW66F: DC current gain as a function of
collector current; typical values
006aaa132
400
200
600
hFE
0
IC(mA)
10- 1 103
102
1 10
(1)
(2)
(3)
VCE = 1 V
(1) amb = 150 °C
(2) amb = 25 °C
(3) amb = -55 °C
Figure 4. BCW66G: DC current gain as a function of
collector current; typical values
006aaa133
400
200
600
800
hFE
0
IC(mA)
10- 1 103
102
1 10
(1)
(2)
(3)
VCE = 1 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Figure 5. BCW66H: DC current gain as a function of
collector current; typical values
006aaa134
IC(mA)
10- 1 103
102
1 10
1
10
VBEsat
(V)
10- 1
(1)
(2)
(3)
IC/IB = 10
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Figure 6. BCW66F: Base-emitter saturation voltage as a
function of collector current; typical values
Nexperia BCW66 series
45 V, 800 mA NPN general-purpose transistor
BCW66x_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved.
Product data sheet Rev. 1 — 21 April 2017
6 / 14
006aaa135
IC(mA)
10- 1 103
102
1 10
1
10
VBEsat
(V)
10- 1
(1)
(2)
(3)
IC/IB = 10
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Figure 7. BCW66G: Base-emitter saturation voltage as a
function of collector current; typical values
006aaa136
IC(mA)
10- 1 103
102
1 10
1
10
VBEsat
(V)
10- 1
(1)
(2)
(3)
IC/IB = 10
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Figure 8. BCW66H: Base-emitter saturation voltage as a
function of collector current; typical values
006aaa137
IC(mA)
10- 1 103
102
1 10
10- 1
1
VCEsat
(V)
10- 2
(1) (2)
(3)
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Figure 9. BCW66F: Collector-emitter saturation voltage
as a function of collector current; typical values
006aaa138
10- 1
10- 2
1
VCEsat
(V)
10- 3
IC(mA)
10- 1 103
102
1 10
(1)
(2)
(3)
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Figure 10. BCW66G: Collector-emitter saturation voltage
as a function of collector current; typical values
Nexperia BCW66 series
45 V, 800 mA NPN general-purpose transistor
BCW66x_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved.
Product data sheet Rev. 1 — 21 April 2017
7 / 14
006aaa139
10- 1
10- 2
1
VCEsat
(V)
10- 3
IC(mA)
10- 1 103
102
1 10
(1)
(2)
(3)
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Figure 11. BCW66H: Collector-emitter saturation voltage
as a function of collector current; typical values
VCE (V)
0 542 31
006aaa140
0.4
0.8
1.2
IC
(A)
0
(6)
(7)
(8)
(9)
(10)
(1)(2)(3)(4)(5)
Tamb = 25 °C
(1) IB = 16.0 mA
(2) IB = 14.4 mA
(3) IB = 12.8 mA
(4) IB = 11.2 mA
(5) IB = 9.6 mA
(6) IB = 8.0 mA
(7) IB = 6.4 mA
(8) IB = 4.8 mA
(9) IB = 3.2 mA
(10) IB = 1.6 mA
Figure 12. BCW66F: Collector current as a function of
collector-emitter voltage; typical values
Nexperia BCW66 series
45 V, 800 mA NPN general-purpose transistor
BCW66x_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved.
Product data sheet Rev. 1 — 21 April 2017
8 / 14
VCE (V)
0 542 31
006aaa141
0.4
0.8
1.2
IC
(A)
0
(7)
(8)
(9)
(10)
(1)(2)(3)(4)(5)(6)
Tamb = 25 °C
(1) IB = 13.0 mA
(2) IB = 11.7 mA
(3) IB = 10.4 mA
(4) IB = 9.1 mA
(5) IB = 7.8 mA
(6) IB = 6.5 mA
(7) IB = 5.2 mA
(8) IB = 3.9 mA
(9) IB = 2.6 mA
(10) IB = 1.3 mA
Figure 13. BCW66G: Collector current as a function of
collector-emitter voltage; typical values
VCE (V)
0 542 31
006aaa142
0.4
0.8
1.2
IC
(A)
0
(7)
(8)
(9)
(10)
(1)(2)(3)(4)(5)(6)
Tamb = 25 °C
(1) IB = 12.0 mA
(2) IB = 10.8 mA
(3) IB = 9.6 mA
(4) IB = 8.4 mA
(5) IB = 7.2 mA
(6) IB = 6.0 mA
(7) IB = 4.8 mA
(8) IB = 3.6 mA
(9) IB = 2.4 mA
(10) IB = 1.2 mA
Figure 14. BCW66H: Collector current as a function of
collector-emitter voltage; typical values
11 Test information
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
Nexperia BCW66 series
45 V, 800 mA NPN general-purpose transistor
BCW66x_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved.
Product data sheet Rev. 1 — 21 April 2017
9 / 14
12 Package outline
Table 9. Package outline
04-11-04Dimensions in mm
0.45
0.15
1.9
1.1
0.9
3.0
2.8
2.5
2.1
1.4
1.2
0.48
0.38
0.15
0.09
1 2
3
Figure 15. Package outline TO-236 (SOT23)
13 Soldering
Table 10. Soldering
solder lands
solder resist
occupied area
solder paste
sot023_fr
0.5
(3×)
0.6
(3×)
0.6
(3×)
0.7
(3×)
3
1
3.3
2.9
1.7
1.9
2
Dimensions in mm
Figure 16. Reflow soldering footprint for SOT23 (TO-236AB)
Nexperia BCW66 series
45 V, 800 mA NPN general-purpose transistor
BCW66x_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved.
Product data sheet Rev. 1 — 21 April 2017
10 / 14
solder lands
solder resist
occupied area
preferred transport direction during soldering
sot023_fw
2.8
4.5
1.4
4.6
1.4
(2×)
1.2
(2×)
2.2
2.6
Dimensions in mm
Figure 17. Wave soldering footprint for SOT23 (TO-236AB)
14 Revision history
Table 11. Revision history
Document ID Release date Data sheet
status
Change notice Supersedes
BCW66x_SER v.1 21 April 2017 Product data sheet - -
Nexperia BCW66 series
45 V, 800 mA NPN general-purpose transistor
BCW66x_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved.
Product data sheet Rev. 1 — 21 April 2017
11 / 14
15 Legal information
15.1 Data sheet status
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product
development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple
devices. The latest product status information is available on the Internet at URL http://www.nexperia.com.
15.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local Nexperia
sales office. In case of any inconsistency or conflict with the short data sheet,
the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be
valid in which the Nexperia product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
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Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give any
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customer might incur for any reason whatsoever, Nexperia's aggregate and
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Right to make changes — Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
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Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification. Customers are responsible for the
design and operation of their applications and products using Nexperia
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any liability related to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications or products, or
the application or use by customer’s third party customer(s). Customer is
responsible for doing all necessary testing for the customer’s applications
and products using Nexperia products in order to avoid a default of the
applications and the products or of the application or use by customer’s third
party customer(s). Nexperia does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Nexperia products are
sold subject to the general terms and conditions of commercial sale, as
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in a valid written individual agreement. In case an individual agreement is
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terms and conditions with regard to the purchase of Nexperia products by
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No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or
the grant, conveyance or implication of any license under any copyrights,
patents or other industrial or intellectual property rights.
Suitability for use in automotive applications — This Nexperia product
has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
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severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Nexperia BCW66 series
45 V, 800 mA NPN general-purpose transistor
BCW66x_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved.
Product data sheet Rev. 1 — 21 April 2017
12 / 14
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Nexperia BCW66 series
45 V, 800 mA NPN general-purpose transistor
BCW66x_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved.
Product data sheet Rev. 1 — 21 April 2017
13 / 14
Tables
Tab. 1. Quick reference data .........................................1
Tab. 2. Pinning ...............................................................2
Tab. 3. Ordering information ..........................................2
Tab. 4. Marking ..............................................................2
Tab. 5. Limiting values .................................................. 2
Tab. 6. Thermal characteristics ..................................... 3
Tab. 7. Electrical characteristics ....................................4
Tab. 8. ............................................................................ 5
Tab. 9. Package outline .................................................9
Tab. 10. Soldering ........................................................... 9
Tab. 11. Revision history ...............................................10
Figures
Fig. 1. Power derating curve ........................................ 3
Fig. 2. Transient thermal impedance from junction
to ambient as a function of pulse duration;
typical values .....................................................4
Fig. 3. BCW66F: DC current gain as a function of
collector current; typical values ......................... 5
Fig. 4. BCW66G: DC current gain as a function of
collector current; typical values ......................... 5
Fig. 5. BCW66H: DC current gain as a function of
collector current; typical values ......................... 5
Fig. 6. BCW66F: Base-emitter saturation voltage
as a function of collector current; typical
values ................................................................ 5
Fig. 7. BCW66G: Base-emitter saturation voltage
as a function of collector current; typical
values ................................................................ 6
Fig. 8. BCW66H: Base-emitter saturation voltage
as a function of collector current; typical
values ................................................................ 6
Fig. 9. BCW66F: Collector-emitter saturation
voltage as a function of collector current;
typical values .....................................................6
Fig. 10. BCW66G: Collector-emitter saturation
voltage as a function of collector current;
typical values .....................................................6
Fig. 11. BCW66H: Collector-emitter saturation
voltage as a function of collector current;
typical values .....................................................7
Fig. 12. BCW66F: Collector current as a function of
collector-emitter voltage; typical values .............7
Fig. 13. BCW66G: Collector current as a function of
collector-emitter voltage; typical values .............8
Fig. 14. BCW66H: Collector current as a function of
collector-emitter voltage; typical values .............8
Fig. 15. Package outline TO-236 (SOT23) .....................9
Fig. 16. Reflow soldering footprint for SOT23
(TO-236AB) ....................................................... 9
Fig. 17. Wave soldering footprint for SOT23
(TO-236AB) ..................................................... 10
Nexperia BCW66 series
45 V, 800 mA NPN general-purpose transistor
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section 'Legal information'.
© Nexperia B.V. 2017. All rights reserved.
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 21 April 2017
Document identifier: BCW66x_SER
Contents
1 General description ............................................ 1
2 Features and benefits .........................................1
3 Applications .........................................................1
4 Quick reference data .......................................... 1
5 Pinning information ............................................ 2
6 Ordering information .......................................... 2
7 Marking .................................................................2
8 Limiting values ....................................................2
9 Thermal characteristics ......................................3
10 Electrical characteristics ....................................4
11 Test information ..................................................8
11.1 Quality information .............................................8
12 Package outline ...................................................9
13 Soldering ..............................................................9
14 Revision history ................................................ 10
15 Legal information .............................................. 11