- 201 - MC33171, 35171 Q-IND, BBR MOTOROLA sprees CERN HHO RAT H MC33171 MC35171 B ft OER: 220 1 A/amp Vs=t15V EME 144 44 v y set = Pg @RMBLMA: 3~44V, +1.5~1 229 reps RHEE lev uy y 2. te ar, Co rvs zz ONDESo A TeTEH eeomut | av ove Orv rT ht Was De sows C , q -40~+; ahh % @AKGE 5 4 7HEI:0~500pF ores aR |/ / af tare. YR SU mh 55) bi a 5 || REG | RB | eA RBA RB / / AAR VEE Vos 2 4.5 2 45 mV VoOWBENI7t ~ | TC/Vos 10 / 10 / BYSC VoMRHIETE | Vos/time / / / / B/A ATW RES Ib 20 100 20 100 nA ATM Ba los 5 20 5 20 nA o 7 ADA BE Vn / / / / wVp-p Be - ema AVMEEERE | en |32 / 32 / nv/J He iTOP VIEW! ASTRA ETE | in (0.2 / 0.2 / pA// Hz Zeit Rin 300 / 300 / MQ AE RintM / / / / GQ (ATS | VCH -Vs~ / -Vs~ / v +Vs-1.8 +V5-1.8 AMIESHREL | CMRR}| @ | 90 80 90 80 B Ey : PSRR/ @ | 100 80 100 80 4B Kes REFS | Avo | 500 50 500 50 V/V HOTA Vo +142 +13.6 +14.2 +13.6 Vv LITA IA Zo @ | 100 / 100 Q Op Amp Temperature wy Io ~27~45 -15~+3 -27~45 -15~43 mA Device Package ast ae Fonction Range Bor Is 0. 22 0.25 0.22 0.25 mA Single. MC331710, 40 to +85C S0-8 Plastic DIP MC38171U = 85 to + 125C Ceramic DIP I-D-b SR 21 16 2.1 1.6 W/us MC33171P -40 ta +B5C Plastic DIP ASAE G BW @ 1, 8 1. 4 L 8 1. 4 MHz este fT / / / / Mita Wd Hb tr / / / / ns th HA ts / / / / ns Fa-b os / / / / % POT ALS DG / / / / % PaBEHtE GD / / / / degree SMUT AS (THD | @ | 0.03 / 0.03 / % Fe WV-Yay cs / / / / B @ f0-1kHz, Rs=100 RL=10K @ Av=+10, RL=10k, f =10kHz | f0=1ktz BYV7", =1Mz RsS10k HORS te | @ Rs=100 Av=l, Vi=-10V~+10, RL=10k | Vo=+10V, RL=10k f0=100kHz 4