RFP12N18...N20 Rea MOS-N-FET-e _VFET, 180...200V, 12A, 75W, <250/340ns _ 7p BUZ 31, IRF 640, IRF 642, 2SK925 RFP 12 PO8...P10 Rea MOS-P-FET-e VFET, 80... 100V, 12A, 75W, <235/450ns lp T0220, IRF 9540, IRF 9542, 25127 RFP 15NOS...NO6 Rea MOS-N-FET-e VFET, 50...60V, 154, BOW, <215/315ns 17p T0-220 BUZ 21, IRF 640...643, 2SK673, 2SK971, ++ RFP 15N12...N15 Rea MOS-N-FET-e VFET, 120...150V, 15A, 75W, <300/470ns 17p T0-220 BUZ 30A, IRF 640...643 RFP 18NO8...Nt0 Rea MOS-N-FET-e VFET, 80... 100V, 18A, 75W, <540/450ns 1p T0-220 BUZ 21...22, BUZ 30A, IRF 540, IRF 542 REP 25 NOG_ Rea MOS-N-FET-e VEET,S P.60V, 250, 75W, <285/425ns 7p 70-220 __BUZ21...22, BUZ 30A, IRF 540.543. RFs Si-N =BFP 181 (SMD-Marking) - 44 $Or143.ttiti~* ~ BFP 181. RFs Si-N =BFR 181 (SMD-Marking) 35 SOT-23 >BFR 181 RG....RK RG Si-P+R =RN 2427 (SMD-Marking) _ 35 SOT-23 >RN 2427 RG1A....M Gie Si-Di FRr, 50... 1000V, 1A, Uf<t,3V(1A), <150...500ns 31a SOD-57 BYD 33 M 3la BYT 52A...M, BYV 12... 16, RGP 10A...M, ++ A=50, B=100, D=200, G=400, J=-600, K=800, M=1000V RGIC Sak Si-Di __FRr, 1000V, 0,7A, Uf<3,3V(0,7A), 100ns_ 31a 0-14 BA 159 Bla BA 159, BYT 52M, MR 818, RGP 10M, ++ RG 2A... Gie Si-Di FRr, 50... 1000V, 2A, Ufe1,3V(2A), <150...500ns 3la S0D-57 BYW 95 C(600V) 31a BY 218)... BYV37...38, BYW95...96..,14 ne - ____A=50, B=100, D=200, G=400, J=600, K=800, M=1000V __ BYW96E(1000V) 31a RG 2A2 Sak S-Di TV Damper-Di, 1300V, 0,5A, Uf<3,5V(0,5A), 100ns 31a DO-14 (BY 228) 3ta_s=BY 23/1400, BY 268...269, RGP 15-14 _ RG 2(A,.Z) Sak S-Di FRr, 70...600V, 0,5A, Uf<1,8V(1,5A), 100ns 31a DO-14 BA 159 3la BY 201/..., BYX55/..., AGP 108..M,++ oe ; RG 2=400V, A=600V, Y=70V, 2-200 ; _ - RG3A....M Gie Si-Di FRr, 50... 1000V, 3A, Ufct,3V(3A), <150...500ns 31a SOD-64 BYW 95 C(600V) 31a BYW 95A...C, BYW 96D...E, RGP 30A...M, ++ A=50, B=100, D=200, G=400, J-600, K=800, M=1000V BYW 96E(1000V) 31a RG4A...M Gie Si-Di FRr, 50... 1000V, 3A, Uf<1,3V(3A), <150...500ns 31a SOD-64 BYW 95 C(800V) 31a BYW 95A...C, BYW 96D..., RGP 30A...M, ++ __ _ _ A=50, B=100, D=200, G=400, J-600, K=800, M=1000V___ ___BYW96E(1000V) _3ta RG4 Sak Si-Di FRe, 400V, 3A, Uf<1,8V(3A), 100ns 31a (8x7mm@) BYW95C 31a ~~ BYT 56G...M, BYW 74... 76, BYW 95...96.. RG4A Sak Si-Di FRr, BOOV, 2A, Uf<2V(2A), 100ns 31a (8x7mm@) BYW95C 31a BYT 56J...M, BYW 76, BYW 95...96...,++ RG4C Sak Si-Di FRr, 1000V, 2A, Uf<3V(2A), 100ns 31a (8x7mm@) BYW 96 E 31a BYT 56M, BYT 78, BYW 96E, , RGP 30M,++ RG4Y Sak Si-Di FRr, 7OV, 3,5A, Uf<1,3V(3,5A), 100ns 3la (8x7mm@) BYW95C 31a BYT 56G...M, BYW 72...76, BYW 95...96,++ RG 4Z. Sak S-Di _FRr, 200, 1,54, Uf<1,7V(3A), 100ns_ 31a (8x7mm@)___ BYW95C Sia BYT58G...M, BYW/72....76, BYW.95...96,44 RG 10 Sak Si-Di FRr, 400V, 1,2A, Ufct,8V(1,5A), 100ns 31a DO-14 BYD 33 M 31a BYD 33G...M, BYV 13...16, BYV95B...E4+ RG 10A Sak Si-Di FRr, 600V, 1A, Uf<2V(1A), 100ns 3a D0-14 BYD 33 M 3ta BYD 33J...M, BYV 14...16, BYV 95C...E,++ RG10Y Sak S-Di Rr, 70V,1,5A, Ufe1,1V(1,5A), 100ns 3ta DO-14 BYD 33M 3la BYD 33D...M, BYV 13...16, BYV95A...E4+ RGB 293200 IC | ____ CTV, RGB Double-scan Processor : so RGL27 A... Gie Si-Di =BYM 31/.... >BYM 31/... RGL 34 A...M Gie Si-Di =BYM O6/.... >BYM O6/... RGL 41 A...M Gie SDI =BYM11/.... _ >BYM 11/.. ee RGM 30 A....M Gie Si-Di Dual, FRr, 30A(T=100), Uf<1,3V(15A), <150...500ns 23 T0-3 By 74]... FE 30A...G, MUR 3005...3060PT A=50, B=100, D=200, G=400, J=600, K=800, M=1000V RGM 30 AD....MD Si-Di =RGM 30A...M: 235 10-3 FE 30AD...GD RGM 30 AN....MN Si-Di =RGM 30A...M: 23n T0-3 FE 30AN...GN RGPO1-10...-20 Gie SEDI. Rr, $, 1000...2000V, 0,1A, Uf<1,5V(0,1A), <300ns 31a S0D-22 BY 203/20 31a BY 203/..., SHG 1,5...2 RGP 10A....M Gie Sibi FRr, 50... 1000V, 1A, Ufct ,3V(1A), <150...500ns 3ta S0D-22 BYD 33 M 31a BYT52A..M, BYV 12...16, RG 1A..M, 4+ A=50, B=100, D=200, G=400, J-600, K-800, M=1000V RGP 15A....M Gie Si-Di FRr, 50... 1000V, 1,54, Uf<1,3V(1,5A), <150...500ns 3ta D0-15 BYD 33M 31a BYV 12...16, BYV 36A...E, RG 2A...M, ++ ee a A=