oNEC / DATA SHEET SILICON TRANSISTOR 2SA1463 HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SA1463 is designed for power amplifier and high speed , switching applications. FEATURES @ High speed, high voltage switching. @ Low Collector Saturation Voltage. PACKAGE DIMENSIONS in millimeters 4.5+0.1 1.64 0.2 1.5+0.1 w =| N q E t B {2% & zt. Slo =7 0. {0106 oa 0.42+ 0.06 . 1.5 3 + 0.06 +t 3.0 0.417 O08 1. Emitter 2. Collector 3. Base Complementary. to the NEC 2SC3736 NPN transistor. ABSOLUTE MAXIMUM RATINGS Maximum Voltages and Currents (Tg = 25 C) Collector to Base Voltage Vcpgo 60 Vv Collector to Emitter Voltage VcEO 45 Vv Emitter to Base Voltage VeEBO 5.0 V Collector Current (DC) lc 1.0 A Collector Current (Pulse) * le 2.0 A Maximum Power Dissipation Total Power Dissipation at 25 C Ambient Temperature * Py 2.0 W Maximum Temperatures Junction Temperature Tj 150 C Storage Temperature Range Tstg 55 to +150 c *PW <= 10 ms, Duty Cycle s 50% ** When mounted on ceramic substrate of 16 cm? x 0.7 mm ELECTRICAL CHARACTERISTICS (T, = 25 C) CHARACTERISTIC SYMBOL MIN. TYP, MAX. UNIT TEST CONDICTIONS Collector Cutoff Current IcEs 0.5 uA Vce = 45 V, Ree =0 Emitter Cutoff Current lEBO 0.5 BA Vep=4.0V,Ic=0 DC Current Gain hee.*** 60 200 Vce =10V, lo =50 mA DC Current Gain hee2*** 60 Vce = 10 V, i = 500 mA Collector Saturation Voltage Vv nae 0.26 0.6 Vv : : CE (sat) Ic = 500 mA, Ip =50 mA Base Saturation Voltage VBE(sat)*** 0.98 1.2 Vv . Gain Bandwidth Product ft 300 400 MHz Vce = 10 V, Ie = 100 mA Output Capacitance Cob 11 25 _pF Vcp = 10 V, le = 0,7 = 1.0 MHz Turn-on Time ton 25 40 ns I = 800 mA Storage Time tgtg 46 * 70 ns - , - _ 1g1=lp2 = 90 mA Turn-off Time ~ toff 62 100 ns : ***Pulsed: PW < 350 us,.Duty Cycle Ss 2 % hee Classification - MARKING | | 1k. IK NFE * 100 to 200 60 to 120 Document No, TC1889A (0.D.No. TC--6012A) Date Published November 1994 M Printed in Japan NEC Corporation 1987NEC 2SA1463 TYPICAL CHARACTERISTICS (T, = 25 C) PTTotal Power Dissipation-W I-Collector CurrentA hre-DC Current Gain TOTAL POWER DISSIPATION vs, AMBIENT TEMPERATURE 24 4, 2.0 ey > Cn ma 1.6 vo, . % 6. my. 1.2 on %, , %, % 0.8 o- 6, 2 0.4 Free Q air eS op 0. 50 100 150 TaAmbient Temperature"C COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE ~-10 18 =l 14 m -08 -12 mA 0.6 0.4 -0.2 0 -02 -04 -06 -08 -1.0 -1.2 -14 -16 -18 2.0 VceECollector to Emitter VoltageV DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 500 200 100 50 20 m oa 5 $m 10m -20m -$0m -100m -200m -500m -1 -2 ICollector CurrentA . I-Collector CurrentA ICollector Current-A ICollector CurrentA 500 m 200 m 100 m 50m -20m -10m SAFE OPERATING AREA (TRANSIENT THERMAL RESISTANCE METHOD) IC(pulse) MAX. Ie(DC) MAX. 0.5 0.2 70.1 0.05 0.02 0.01 -1 -2 ~5 -10 -20 50 VceE-Collector to Emitter VoltageV COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 100 10 bh 50S 9.0 40 oe 8.0 mA 0 -1 2 ~3 -4 VceECollector to Emitter VoltageV COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 5 VcE=-10V 600 700 VeeBase to Emitter VoltagemvV 800 ~ 900 1000NEC : 2SA1463 BASE AND COLLECTOR SATURATION GAIN BANDWIDTH PRODUCT vs. EMITTER VOLTAGE vs.COLLECTOR CURRENT CURRENT 1000 | ra Qo Ig=10-lp Voe=10 | a an 3 o | 2 | ! a ny ND Q So o oS I 2 hm ga 3 nm o ( ft-Gain Bandwidth Product-MHz VBE(sat)~ Base: Saturation Voltage-V VCE(sat)~Collector Saturation VoltageV | 9 5 a - o Sm -30m -20m -50m-100m-200m-500m-1 -2 5 5 ICollector CurrentA 5m 10m 20m 50m 100m 200m 500m 1 2 5 lgEmitter CurrentA OUTPUT CAPACITANCE vs. REVERSE VOLTAGE SWITCHING TIME vs. COLLECTOR CURRENT 100 1000 f=1.0 MHz Voc=- 10 V Ip1='B2 500 PW=200 ns Duty Cycles2 % 50 200 N oO 100 e o ul So tonTurn an Timegs tstg-Storage Timezs on CobOutput CapacitancepF. nN 5 - Oo a) 10m = -20m 50m -100m -200m -500m -1 2 45 IcCollector CurrentA = -1 5 10 20 50 -100 VcpCollector to Base VoltageV SWITCHING TIME TEST CIRCUIT VoC=-10 V NAN 9g Vin L % i @ * Vout SJ 90 % Vout 9 ton -10V Vin / VeB=5 V 1 10 % 100 ns . 9 Duty Cycles2 % . Vout 10 % 90 % tstg , toftNEC : 2SA1463 REFERENCE Dacument Name Document No. NEC semiconductor device reliability/quality control system. TEI-1202 Quality grade on NEC semiconductor devices. 1E1-1209 Semiconductor device mounting technology manual. 1E1-1207 Semiconductor device package manual, , 1Et-1213 Guide to quality assurance for semiconductor devices. MEI-1202 Semiconductor selection guide. . MF-1134 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC. Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime ' systems, etc. M4 92.6