\ Sa Bone en ee pee tar SAMSUNG SEMICONDUCTOR heranain uuusuce > - ' E~: IRF9130/9131/9132/9133 =a 4 T20 =< IDEPOQ{130/9131/9132/91383 8 eee PLCHANNEL: - IRF9530/9531/9532/9533 POvER MOSES Preliminary Specifications - 99 DEM 7964142 9005405 ? , 100 Voit, 0.30 Ohm SFET - PRODUCT SUMMARY . o Part Number Vos Rosjon) Ib IRFARFP9130, IRF9530| -100V} 0.309 | -12A IRFARFP9131, IRF9631|; 60V 0.309 | 12A G . IRFARFP9132, IRF9532|] -100V} 0.402 | 10A RFARFP9133, IRF9533| 60Vj 0.402 | 10A FEATURES , . PACKAGE STYLE *# Low Rosjon) : Package Type Part Number Improved Inductive ruggedness : 0-3 IRF9130/9131/9132/9133 Fast switching times : See Ee acke gate cell structure T0-3P IRFP9130/9131/9132/9133 - e Extended safe operating area . * Improved high temperature reliability - 10-220 (AF9530/9531/9532/9533 MAXIMUM RATINGS ; IRF/IRFP Characteristic Symbo! 9130 | 9131 9132 9133 Unit . ' 9530 9531 9532 9533 Drain-Source Voltage (1) . Voss -100 -60 -100 ~60 Vde Drain-Gate Voltage (Ras=1.0MQ) (1) Voer 100 -~60 =100 60 Vde Gate-Source Voltage Ves +20 Vde Continuous Drain Current Tc=25C lb 12 -12 -10 -10 Adc Continuous Drain Current Tc= 100C Ib -7.5 7.5 -6.6 -6.5 Adc Drain CurrentPulsed (3) tom -48 48 -40 -40 Adc Gate CurrentPulsed tom 1.65 Adc Total Power Dissipation @ Tc=25C Pp . 75 Watts Derate above 25C 0.6 Wit ooetien Temperatare Rangy Ty, Tst 55 to 150 C ul . i Mein tenase tee eweconss |__ 200 Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300ys, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature 58 sausuna SEMICONDUCTOR 404 |34142 SAMSUNG SEMICONDUCTOR INC 9! Tannen IRF9130/9131/9132/9133" cree Pp ees aussie y TRFP9130/9131/9132/9133 : = P.CHANNEL-~* ~~ IRF95 | POWER MOSFETS ag peg 7ib4i4e OOOS40b 4 ES T-34-21 ELECTRICAL CHARACTERISTICS (1c=25C unless otherwise specified) Characteristic Symbol] Type | Min | Typ| Max [Units Test Conditions IRFO190/2| - : : . ~ |RFPO130/A100) _ V |Ves=0V Drain-Source Breakdown BVpss IRF9530/2 , Voltage ai 60 Voi 250, . - iRF95313 ~ pn 20004 , Gate Threshold Voltage Vestn | ALL |-2.0) | ~4.0] V |Vos=Ves, Ip=250pA Gate-Source Leakage Forward] Igss ALL | }-100 | nA jVes=-20V Gate-Source Leakage Reverse| lass ALL _ | 100 | nA lVegs=20V Zero Gate Voltage toss | ALL | | {#80 | A [os=Max. Rating, Vas=OV Drain Current | +1000 | pA |Vps=Max. RatingX0.8, Ves=OV, To=125C a Loe ~ |IRF9130/1 : On-State Drain-Source IRFOSaOrt I ] 7] A ne: | 2 XR . Ves= Current (2) tojon) RFA so Vps>lIpion) XRpsien) max.. Ves= 10V WRFP9192/3} -10 | - A IRF9532/3 IRF9130/2 ; IRFP91322) | | 0.30] a Static Drain-Source On-State Poston) IRF9S30/2 Ves=10V, Ip=6.5A Resistance (2) - IRFO131/3 . : IRFPOI31 | | O40 | 2 IRF9531/3 Forward Transconductance (2)! gts ALL 20!1 _ 8 Vos>!pjon)XRosion) max. Ip=-6.5A input Capacitance . Ciss ALL | 4 700 | pF Output Capacitance Coss ALL - | 450 | pF |Ves=OV, Vos=25V, f=1.0MHz Reverse Transfer.Capacitance Cres ALL - | 200 | pF Turn-On Delay Time taony | ALL - |- 60 | ns Rise Time Tr aL | | | 140 | ng [o0=0-5BVoss, lo=-6.5A, Zo=500 - (MOSFET switching times are essentially Turn-Off Delay Time | tao | ALL | | | 140 | 18 lindepencent of operating temperature.) Fall Time : tr ALL | | | 140 | ns , Total Gate Charge yoo me (Gate-Source Plus Gate-Drain) Qe ALL | | | 45 | MC |vgg=15V, Ip=-15A, Vos=0.8 Max. Rating (Gate charge is essentially independent Gate-Source Charge Qos | ALL -|- 20 | nc | operating temperature. ) Gate-Drain (Miller) Charge | Qgg ALL -|- 25 nc ; THERMAL RESISTANCE Junction-to-Case Rico | ALL }, | | 1.67 | K/wW Case-to-Sink Rines ALL |/1.0 |K/W |Mounting surface flat, smooth, and greased IRFPXXXX . . Junction-to-Ambient Rina | ipFosxK| | 7 80 | KW |Free Air Operation IRF91XX | | 30 | KAV Notes: (1) Ty=25C to 150C - (2) Pulse test: Pulse width<300us, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature t5 samsunc SEMICONDUCTOR . 4057964142 12 SAMSUNG , SEMICONDUCTO a ue 4 IRF9130/9131/9132/9133 * "IRFP9130/9131/9132/$133 IRF9530/9531/9532/9533 R_INC * aan ns4an7 i) DE @ 7764142 o005407 O T mre weremerTesecrinns PUGHANNEL " - ~ POWER MOSFE TS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS T-39-2Al_ Characteristic Symbol] Type | Min |Typ; Max (Units Test Conditions . IRF9130/1 . IRFPO130/1} -}-12/ A Continuous Source Current IRFO530/1 (Body Diode) (RF9132/3 IRErets28; | |10] A [Modified MOSFET symbol . o TRFOI20V1 showing the integral 6 @ ies wot] ~ |l-asl a reverse P-N Junction rectifier Pulse Source Current IRFOS30/1 (Body Diode) (3) IRF9132/3 IRFP9132/3| |-40;, A . IRF9592/3 IRE9130/1 . . (Repe {aor - }-6.3] Vo lTc=25C, tg=-12A, Vag=O0V Diode Forward Voltage (2) Vep 5 IRF9132/3 IRFP9132/3| |-6.0! Vi |To=25C, Is=10A, Vas=0V 1RF9532/3 Reverse Recovery Time tr | ALL - |[1 [ns |Ty=150C, tp=12A, dic/dt=100A/us Notes: (1) Tj=25C to 150C (2) Pulse test: Pulse width<300us, Duty Cyclex2% (3) Repetitive rating: Pulse width limited by max. junction temperature 1.26 (NORMALIZED) > a BVpss. DRAIN-TO-SOURCE BREAKDOWN VOLTAGE o o on ~40 o 40 80 120 Ty, JUNCTION TEMPERATURE (C) Breakdown Voltage Vs. Temperature 06 0 40 9 40 80 120 Ty, JUNCTION TEMPERATURE (C) Normalized On-Resistance Vs. Temperature 160 160 Pp, POWER DISSIPATION (WATTS) Rosjon ORAIN-TO-SOURCE ON RESISTANCE (OHMS) 80 70 60 50 40 30 20 20 40 60 80 100 120 140 To, CASE TEMPERATURE (C) Power Vs. Temperature Derating Curve -10 -20 ~80 40 Ip, DRAIN CURRENT (AMPERES) Typical On-Resistance Vs. Drain Current 160 , . ce SAMSUNG SEMICONDUCTOR 406FRR He ee cor 7964142 SAMSUNG SEMICONDUCTOR INC aa ope aqbunye ooOs4os 2 i. S ke IRF9140/9141/9142/9143 . T- SIV . ~ IRFP9140/9141/91 42/9143 P-CHANNEL IRF9540/9541/9542/9543 _ POWER MOSFETS * Preliminary Specifications - 100 Volt, 0.2 Ohm SFET PRODUCT SUMMARY . D . Part Number Vos Rosjon) lo TIRF/IRFP91 40, IRF9540| 100V|] 0.29 -19A IRF/IRFP9141, IRF9541; -60V| 0.20 -19A G - , IRF/IRFP91 42, IRF9542; -100V| 0.30 -15A IRF/ARFP9143, IRF9543; -60V) 0.30 |. -15A FEATURES) - " . PACKAGE STYLE e Low Rosjon) Package Type Part Number e@ Tu edness > * Improved inductive rugg To-3 IRF9140/9141/9142/0143 e Fast switching times Rugged polysilicon gate cell structure a. e Low input capacitance TO-3P IRFP9140/9141/9142/9143 e Extended safe operating area: - @ Improved high temperature reliability TO-220 IRF9540/954 1/9542/9543 MAXIMUM RATINGS ; IRFIIRFP Characteristic Symbol 9140 . 9141 9142 9143 Unit 9540 9541 9542 9543 Drain-Source Voltage (1) . Voss 100 60 -100 -60 Vde Drain-Gate Voltage (Ras=1.0MQ) (1) Vper TOO 60 -100 | Vdc Gate-Source Voltage Ves +20 Vdc Continuous Drain Current Te=25C Ip -19 -19 -15 -15 Adc Continuous Drain Current Tc=100C Ip -12 -12 -10 -10 Ado Drain CurrentPulsed (3) ~ tom -76 ~76 -60 -60 Adc Gate CurrentPulsed - . lon 41.5 Ade Total Power Dissipation @ Tc=25C Pp . 125 Watts Derate above 25C : 1.0 wiec Operating and Storage Junction Temperature Range Ta, Tstg 755 to 150 c Maximum Lead Temp. for Soldering . . . Purposes, 1/8 from case for 5 seconds Th 300 c Notes: (1} Ty=25C to 150C (2) Pulse test: Pulse width<300ys, Duty Cycle<2% _ (8) Repetitive rating: Pulse width limited by max. junction temperature x ; G58 samsunc SEMICONDUCTOR 407Pe om cern 1 ee reese seen me RE PaO eT 7984142, SAMSUNG | SEMICONDUCTOR INC al ; *y ca oh ts IRF9140/9141/91 42/9143 - IRFP91 40/91 41/9142/9143 IRF9540/9541/9542/9543 | Se D ree UuuS4ut " P-CHANNEL ~* POWER MOSFE TS 77 349-a3 | ELECTRICAL CHARACTERISTICS (1c=25C unless otherwise specified) Characterlstic Symbol] Type | Min | Typ | Max Units Test Conditions IRF9140/2 IRFP9140/21~100} - Vo |Ves=0V Drain-Source Breakdown BVpgs [AF a540/2 Voltage ~ prorat y 0 -60| - Ip=250pA - |IRFO541/3| 5 # Gate Threshold Voltage Vesin | ALL |-2.0] | ~4.0 | V_ |Vos=Vas, lo=-250uA Gate-Source Leakage Forward] lass ALL - 1-100 | nA |Ves=20V Gate-Source Leakage Reverse} Iss | ALL | | | 100 | nA Ves=20V Zero Gate Voltage _ loss | ALL |} -260 | HA |Vos=Max. Rating, Ves=OV Drain Current | |41000/ pA |Vos=Max. RatingX0.8, Vas=OV, To=125C| * IRFOI40/1| . : RFPgi4on] 19} | | A On-State Drain-Source \ IRFOS40/i| * Vpe> loon XR, Ves=-10V Current{2) Pion) Ter91 4013 ps>!pjon)*Rosion) max.. Vas . IRFPOT421 15 ] - A -fIRF9542/3 IRFOT40/1 Static Drain-Source On-Stat ean | a}? | 8 atic Drain-Source On-State - R : Ves=10V, Ip=10A Resistance (2) DSton) tinF91 42/3 ss IRFP9142/3) - 0.3 a . IRF9542/3 Forward Transconductance (2}] te ALL | 5.0 | - Vos>Ipion) XRogion) max. 1b>= 10A Input Capacitance Cig | ALL | | | 1300 | pF , Output Capacitance Coss ALL - _ 700 | pF lVes=OV, Vos= 25V, f=1.0MHz Reverse Transfer Capacitance] Crss ALL _ - 400 | pF . Turn-On Delay Time tajon) | ALL | | 30 | ns Rise Time tr ALL | |] 15 | ns Vop=0.5BVpss, tb=10A, Zo=4.70, - (MOSFET switching times are essentially Turn-Off Delay Time taon) | ALL {| | | 20 | FAS lindependent of operating temperature.) Fall Time t | ar | | | 12 | ns Total Gate Charge . . (Gate-Source Plus Gate-Drain) Oo ALL |] | | 90 | nO Wes=-15V,Ip=-24A, Vos=0.8 Max. Rating (Gate charge Is essentially independent Gate-Source Charge Qgs | ALL | | | 30 | C Iof operating temperature.) Gate-Drain (Miller) Charge Qaa ALL - _ 60 nc . THERMAL RESISTANCE Junction-to-Case Rize | ALL | }| 1.0 |KIW . _iCase-to-Sink Rincs | ALL | [0.11 | K/W|Mounting surface flat, smooth, and greased r RFPXXXX] "|_| gg KW :Junction-to-Ambient Rina IRFOSXX |_____|Free Air Operation i 1 WA Tinroixx | | | 30 KW Notes: (1) Tu=25C to 160C (2) Pulse test: Pulse width<300us, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature 58 samsunc SEMICONDUCTOR 408ne Fo net enemies pee 2984142 SAMSUNG SEMICONDUCTOR INC. 4 | IRF9140/9141/9142/9143 cogee Baie 134s BB an IRFP9140/9141/91 42/9143 =! 'p.CHANNEL IRF9540/9541/9542/9543 "POWER MOSFETS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic - Symbo!| Type | Min |Typ| Max |Units Test Conditions fe IRFPQ140/1; | |-19} A IRFOS40/1 IRF91 42/3 . : IRFPQ142/3) | |15]| A |Modified MOSFET symbol @ G Continuous Source Current (Body Diode) eR showing the integral Ni - ifi IREFA0N| l-zel a reverse P-N junction rectifier IRF9540/1 IRF91 42/3 IRFP9142/3} | |-60]- A IRF9542/3 IRF9440/1 IRFPO140/1] | |4.2] V |Tc=25C, Is=19A, Vas=OV IRF9540/1 IRF9142/3 : IRFPO142/3} | {-4.0] V |Tco=25C, Ig=15A, Ves=OV IRF9542/3 Reverse Recovery Time ter [ALL |j7 | ns |Ty=150C, Ilr=19A, dig/dt=100A/ys Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300us, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature 160 Pulse Source Current -| Isms (Body Diode) (3) Diode Forward Voltage (2) | Vso 1.25 w < 5 140 $ 1.45 a z fe 120 o < 8 = 5. Z 100 ga hos E gz 5 a0 Sz g 90 3 2e 0.95 = 60 : : s 40 5 < 20 a 0.75 - -40 0 40 80 120 160 0 20 40 60 go 100 120 140 160 Ty, JUNCTION TEMPERATURE (C) To, CASE TEMPERATURE (*C) Breakdown Voltage Vs. Temperature Power Vs. Temperature Derating Curve 036 9 = ny o a 8 Rpsion) DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 2 cr) Apsion) DRAIN-TO-SOURCE ON RESISTANCE (OHMS) 0 . 00s -40 iy 40. 120 160 0 20 -40 60 ~80 -100 Ts JUNCTION TEMPERATURE (C) lp, ORAIN CURRENT (AMPERES) Normalized On-Resistance Vs. Temperature . Typical On-Resistance Vs. Drain Current ce SAMSUNG SEMICONDUCTOR : 409cee ee -IRF9230/923119232/9233 ~~ IRFP9230/923119232/9233 Maer 2 2 x TEES ferent + P-CHANNEL: - IRF9630/9631/9632/9633 POWER MOSFETS _ . Preliminary Specifications 7-39-21 . Oh , SFET PRODUCT SUMMARY 200 Volt, 0.8 m Part Number -| Vps_ | Rosion) lp D IRFARFP9230, IRF9630| -200V| 0.80 | -6.5A _ | IRFARFP9231, IRF9631/} -150V| 0.89 | 6.5A G IRF/RFP9232, IRF9632} 200V| 1.20 | 5.5A s . IRF/IRFP9233, IRF9633| -150V] 1.22 | 5.5A 7964142 SAMSUNG SEMICONDUCTOR INC 96D 05417 DD PACKAGE STYLE FEATURES Package Type Part Number e Low Rosjon) : . * Improved inductive ruggedness TO-3 IRF9230/9231/9232/9233 e Fast switching times ; Rugged polysilicon gate cell structure TO-3P IRFP9230/9231 /9232/9233 Low Input capacitance * Extended safe operating area TO-220 IRF9630/9631/9632/9633 Improved high temperature reliability MAXIMUM RATINGS IRFHREP Characteristic Symbo!} 9230 9231 9232 9233 Unit 9630 9631 9632 9633 . Drain-Source Voltage (1) Voss -200 -150 ~-200 -150 Vde Drain-Gate Voltage (Ras=1.0M2) (1) Vocr 200 -160 | "-200 -150 Vde Gate-Source Voltage Ves +20 , Vde Continuous Drain Current Tc=25C lp -6.5 6.5 5.5 -.5 Adc Continuous Drain Current Tc=100C Ip -4.0 -4.0 ~3.5 -3.5 Adc Drain CurrentPulsed (3) lom 26 -26 22 -22 Adc Gate Current--Pulsed lam #1.5 Adc Total Power Dissipation @ To=25C Pp 75 Watts Derate above 25C 0.6 WIP Operating and Storage ; Junction Temperature Rangy Ts, Tstg 55 to 150 6 Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5 seconds th 300 c " Notes: (1) Ty=25C to 160C .(2) Pulse test: Pulse width<300us, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature 416 oH SAMSUNG SEMICONDUCTOR. coma DEB abunye anosuLa I 1RF9230/9231/9232/9233 - - IRFP9230/9231/9232/9233: seams oa. PACHANNEL |. IRF9630/9631/9632/9633 POWER MOSFETS : 78964142 SAMSUNG SEMICONDUCTOR ING 98D 05418 BD ELECTRICAL CHARACTERISTICS (To= 25C unless otherwise specified) TT: 30-2 {_. Characteristic : Symbol] Type | Min |Typ| Max (Units Test Conditions IRFO230/2 . . . IRFP9230/2) --200| - V jVgs=0V Drain-Source Breakdown BVpss | RES6802 Voltage Brazstal160| | V |to= 250 . . IRF9631/3 7] 7 5 WA ~ |Gate Threshold Vottage Vesin | ALL |-2.0; | -4.0| V_ |Vps=Ves, Ip=~-250pA _|Gate-Source Leakage Forward less ALL | | -100] nA |\Ves=20V Gate-Source Leakage Reverse] igss ALL |] 100 | nA \Vos=20V Zero Gate Voltage -Ipss. | ALL |} -250] vA |Vps=Max. Rating, Vas=O0V Drain Current. | {-1000! pA |Vps=Max. RatingX0.8, Vas=OV, To=125C)- . IRF9230/1 On-State Draln-So! . rreooao| >| | | A n-State Drain-Source Vos>l xR , Ves=-10V Current (2) . loon) facooga/3 DS>lp(on)XRogion) max.. Vas . RFPS2923) ~5.5) | A IRF9632/3 : IRF9230/1 ; ; -/IRFPS2S0IL | | 0.8 Q . Static Drain-Source On-State | p54) IRFO6SOV1 Ves'-10V, Ip=3.5A Resistance (2) (RF9232/3 IRFP9292/3) | 1.2 Q . IRFQ632/3 ; Forward Transconductance (2)! gis | ALL | 2.2|| | & |Vos>lo(on)XRoston) max. lb=3.5A Input Capacitance Css |. ALL |j 650 | pF ' Output Capacitance Coss ALL | 1| 300 | pF |Vas=OV, Vos=25V, f=1.0MHz . Reverse Transfer Capacitance! Crss ALL -j- 90 pF - Turn-On Delay Time . tajon) ALL {} 50 ns Rise Time tr au. | || 100 | ns Von=0.5BVpss, lb=3.5A, Zo=600, (MOSFET switching times are essentially Turn-Off Delay Time tao | ALL | | | 190 | AS independent of operating temperature.) Fall Time | tt ALL - - 80 ns Total Gate Charge (Gate-Source Plus Gate-Drain) Q, ALL |] 45 | 96 jvgs=15V, tp=8.0A, Vos=0.8 Max. Rating (Gate charge is essentially Independent Gate-Source Charge Qgs ALL - |j; 20 nc of operating temperature.) Gate-Drain (Miller) Charge ] Qga ALL || 26 nc THERMAL RESISTANCE Junction-to-Case Rive | ALL | | | 1.67 | KW Case-to-Sink Rincs ALL |1.0 | KAW Mounting surface flat, smooth, and greased IRFPXXXX - _ 80 KW . - Dunction-to-Ambient R IRF96XX _|Pree Air Operation mA linroax | || 30 | KW Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300us, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature ge samsunc SEMICONDUCTOR 417Com, IRF9230/9231 1923219233 a + IRFP9230/9231/9232/9233 = s. P-CHANNE POWER MOSFE 1S 7964142 SAMSUNG SEMICONDUCTOR INC 98D 05419 D SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS T-39-a2l Symbol : Type | Min Max IRFQ230/1 IRFP9230/1] | IRFO630/1 . (RF9232/3 IRFP9292/8; - | * |IRF9632/3 Units Test Conditions Characteristic Typ . -6.5/ A Continuous Source Current Is (Body Diode) 6.5) A |Modified MOSFET symbol showing the integral IRFQ230/1 IRFP92301/ | reverse P-N junction rectifier Pulse Source Current Jom _[RFSB8ON : (Body Diode) (3) IRF9232/3 . . 7 IRFP9232/3) | . (RFQ632/3 REPSDS0N Tco=25C, Is=6.5A, Veg=0V je = _ ls=6.5A, Veg=0 IRFQBSO/T 8 ss Vso . * |Diede Forward Voltage (2) . : IRF9232/3 IRFP9292/3) | IRF9632/3 Reverse Recovery Time ter ALL --|- _ ns |Ty=150C, (F=6.5A, dip/dt= 100A/us Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300us, Duty Cycle<2% (3) Renetitive ratina: Pulse width limited by max. junction temperature -6.3] V |To=25C, ls=5.6A, Vas=OV 1.25 80 g < 4 70 > a z 60 z E e e 50 ie 1.05 S oy E N < wa & 40 aS 3 38 Bz 008 f 30 R z 5 2 Z gs 20 a a a 40 80 120 160 0 20 40 60. 80 100 120 140 160 Ty, JUNCTION TEMPERATURE (C) Breakdown Voltage Vs. Temperature Tc, CASE TEMPERATURE (C) Power Vs. Temperature Derating Curve 2.5 20 1.5 (NORMALIZED) Vos=-20A Rpsjon, DRAIN-TO-SOURCE ON RESISTANCE 0.5 Foson) DRAIN-TO-SOURCE ON RESISTANCE (OHMS) -40. oO 80 Ty, JUNCTION TEMPERATURE (C) Normalized Or-Resistance Vs. Temperature -10 15 20 Ip, DRAIN CURRENT (AMPERES) Typical On-Resistance Vs. Drain Current GE sausunc SEMICONDUCTOR 418ee " Fa. 4964142 SAMSUNG QDAe ee INC $8Bb 05420 OD. e DAG ve - b. 3- 1RF9240/9241/9242/9243:.-. i Pib4b4e UUUS4eu 3 [ ~39-23 _A IRFP9240/9241/9242/9243' emer NEL ~~) IRF9640/9641/9642/9643 <_. _POWER MOSFETS Preliminary Specifications 4&8 DE @P?9b4h42 ooosyeo 3 , - PRODUCT SUMMARY 200 Volt, 0.5 Ohm SFET - Part Number "| vos] Rosea Tip * . D . IRFARFP9240, IRF9640| 200V| 0.590 | 11A 7 IRF/ARFP9241, IRF9641/-150V| 0.59 | -11A IRF/IRFP9242, IRF9642 -200V 0.72 | -9.0A G ~ : s IRFHRFP9243, IRF9643| -150V 9.70 9.0A FEATURES PACKAGE STYLE e Low Rosion) . Package Type Part Number Improved Inductive ruggedness TO-3 IRF9240/924 1/9242/9243 Fast switching times - * Rugged polysilicon gate cell structure > TO-3P IRFP9240/9241/9242/9243 Low Input capacitance - Extended safe operating area 7 Improved high temperature reliability 10-220 IRF96 40/964 1/9642/9643 MAXIMUM RATINGS IRFHRFP Characteristic - Symbol 9240 9241 9242 9243 Unit . . 9640 9641 9642 9643 Drain-Source Voltage (1) : . Voss | -200 -150 -200 -150 Vde Drain-Gate Voltage (Res=1.0M9) (1) Vocr 200 | -150 | -200 | -150 vac Gate-Source Voltage Vas +20 ' Vde Continuous Drain Current Tc =25C ip -11 iT -9.0 -9.0 Ade Continuous Drain Current Te=100C Ip ~7.0 -7.0 -6.0 -6.0 Ade Drain CurrentPulsed (3) ' Jom 44 44 _ 786 36 Ade Gate CurrentPulsed fam 15 : Ade Total Power Dissipation @ Tc=25C Pp | 125 Watts Derate above 25C 1.0 W/C Operating and Storage : Junction Temperature Rangy Ty, Tstg . 55 to 150 C Maximum Lead Temp. for Soldering ' Purposes, 1/8" from case for 5 seconds Te 300 , c Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300ys, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature ce SAMSUNG SEMICONDUCTOR oo. . 4197964 142, SAMSUNG BEMICONDUCTOR._1I INC RF9240/9241 19242/9243 a IRFP9240/9241/9242/9243 - ?9b4142 goosual 5 i IRF9640/9641/9642/9643 , ' POWER MOSFETS T7394 -a3_ ELECTRICAL CHARACTERISTICS (To=25C unless otherwise specified) Characteristic Symbo!| Type | Min Typ Max (Units Test Conditions - IRF9240/2 . . IRFP9240/2;-200/ _ V |Ves=0V Drain-Source Breakdown BVpss RFS640/2 : Voltage _ ees V BOuA iaFoeati3) ] | b= 260u Gate Threstiold Voltage Vesiny | ALL |-2.0] ~ | 4.0] V |Vps=Ves, b= 250uA , Gate-Source Leakage Forward} Igss ALL - | -100/] nA Ves=-20V Gate-Source Leakage Reverse] less ALL - _~ 100 | nA Mes=20V Zero Gate Voltage pss ALL _ {| 7250! uA Vvos=Max. Rating, Ves=0V Drain Current - | = [-1000] HA |Vos=Max. RatingX0.8, Ves=OV, To=125C| , IPooON| 11 ta On-State Drain-Source wmraeaon| | | | lo{on) Vos>lpton)XRogion) max., Vag= 10V Current (2) . _|IRFe642 A : inFoeaa) 2] | : IRF9240/1 : . WRFPS240/1 _ 0.5 Qo Static Drain-Source On-State Ros, IRFOB40/1 Ves=10V, lb=6.0A Resistance (2) onl j RFODA2I3 IRFP924273] _ 0.7 Qa IRF9642/3 . Forward Transconductance (2)! gis ALL | 4.0), |- 8B [Vos>Ip(en) X Rosten) max., lp>=6.0A input Capacitance Ciss ALL - | 1300 | pF . Output Capacitance Coss ALL - | 450 PF |Vas=OV, Vos=25V, f=1.0MHz Reverse Transfer Capacitance} Crss ALL - - 250 | pF Turn-On Delay Time fdtony | ALL - - 30 | ns Rise Time t ALL _ 15 ng |00=0.5BVpss, Ib=6.0A, Zo=4.79, - (MOSFET switching times are essentialiy Turn-Off Delay Time tao) {| ALL | | | 18 | ns independent of operating temperature.) Fall Time . tr ALL _ - 12 ns : Total Gate Charge . : (Gate-Source Plus Gate-Drain} Ge. | ALL | | | 90 | nC Iveg=t15y, Ip=~22A, Vos=0.8 Max. ' Rating (Gate charge is essentially independent, : Gate-Source Charge Qgs ALL _ - 30 nc of operating temperature.) Gate-Drain (Miller) Charge | Qo ALL _ 60 nc THERMAL RESISTANCE - . . | Junction-to-Case Rituc ALL |- | 1.0 |Kw Case-to-Sink __{ Pinos | ALL -| {1.0] |KAV (Mounting surface flat, smooth, and greased . . IRFPIXX] _ |_| ao Junction-to-Ambient R IRFOBXX Free Air Operation mA linfooxx | || 30 | KW Notes: (1) Ty=25C to 150C , (2) Pulse test: Pulse width<300ys, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature GEE sausunc SEMICONDUCTOR 7: . 420am, poet 14 z 5. wf 758 B4A142 SAMSUNG SEMICOND TAR. Nie. . CAR AS - dD AR prez aolo2aiie2e2is24s Mbd bc UUUSHce EF -ag a3 = Elna: Ro Ny SSE 'P-CH, A NNEL POWER MOSFETS DE 7ab4uLn4e OOOS4ee ? URGE-UDHAIN DIODE RATINGS AND CHARACTERISTICS Characteristic : Symbol] Type | Min |Typ! Max |Units Test Conditions - IRFOOAONI IRFPO2401] | |-11] A Continuous Source Current | Ig IRF9640/1 (Body Diode) . IRF9242/3 D pene ||79.0] A |Modified MOSFET symbol [ . RFODAON - howing the integral G . i i Ss . noon) ||=aal a reverse P-N junction rectifier Pulse Source Current . Ism IRFOB40/t (Body Diode) (3) . IRF9242/3 . IRFP9242/3] | ]|-36] A IRFO642/3 IRFQ240/1 . IRFP9240/1; | |-4.6] V |Tco=25C, Is=11A, Vas=OV , ay IRFO640/1 Diode Forward Voltage (2) Vsp . . {RF9242/3 (RFP9242/3]) | [-4.4] Vo |To=25C, Is=-9.0A, Ves=OV s IRF9642/3 Reverse Recovery Time tr ALL - _ - ns | T=150C, lp=11A,dIiF/dt= 100A/us Notes: (1) Ty3=25C to 150C (2) Pulse test: Pulse width<300us, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature 4.25 160 wi 3 a 140 > 1.16 a z- 120 5 < 2 = 3 - Z 100 us 5 & oe < uz = 80 52 8 = a 6 32 & 6o E = z 2 3 5 40 6 c # 20 3 -40 oO. 40 80 120, 160 0 20, 40 60 680 6100 120 140)=(160 T,, JUNCTION TEMPERATURE (C) Tc, CASE TEMPERATURE (C) Breakdown Voltage Vs. Temperature Power Vs. Temperature Derating Curve : 10 z 3 5 2 os g 3 = z z & a @ o6 38 1.6 w 32 Z 8 = wy Vga 20V s Zz 1Q 5 04 = a = ; 2 < 0.6 o2 & 5 8 : o a 40 o.- 40 160 0 -15 Ts, JUNCTION TEMPERATURE (C) ~ Ip, DRAIN CURRENT (AMPERES) Normalized Or-Resistance Vs. Temperature . Typical On-Resistance Vs. Draln Current GEE samsunc SEMICONDUCTOR 421