asc 1000 O CARRERE WR A Low Noise Audio Amplifier Applications - MBE Cte * MEBKAH SK, /" BRMRE DB, Y'JDINPNIESSYPWBKSYYAI(PCTAR) SILICON NPN EPITAXIAL TRANSISTOR (PCT PROCESS) * Vopo = 50V - NF = SAB (Max - )( > bes = 200 ~ 700 Rg=10k O ) f=1oonz Unit in mm Lay Lay = REE iL EMITTER % COLLECTOR & BASE JEDEC - MATH MAXIMUM RATINGS (Ta = 250) CHARACTERISTIC SYMBOL RATING UNIT IVIR*N-AMBE | Vox 50 Vv AVORe xs, FM MA Vo 50 Vv Zl yFeN-AMAME | Vapo 5 v av IR UE Ig 100 mA Zio dk Bd Ip -100 mA aVISRBR Po 200 mW ne Tj 125 c | RERE Tete 55~ 125 c EIAJ - a TOSHIBA 2-5B1A ~ K PCOTRMACLON BAR tHat, Produced by Perfect Crystal Device Technology. 5282sc 1000 MAK ELECTRICAL CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL CONDITION MIN. | TYP. | MAX.| UNIT av 9 ek Le of Bt IcBo Vop=18V, Ip=0 _ _ Ol eA = 3 * Le BH Bo | Iepo | Vep=5V, Ic=0 - _ Ql | HA Bk MMWR (Note) hre Vop=6v, Ig=2ma 200 - 700 | aves xe dy SABE | Von(eat)|Ic=10mA, Ip=ima _ as Vv N- Ar aenscy GHBE VBR Vop= 6V, Ig=2ma - O65 _ v y yyvae YAR HK fr Vor=6V, Ig=1mA - 80 - MHZ Vv =6V Ino avy 2 BR Bw G cB , E _ Hane & ob f=1MHz 6 10 pF Vorp=6v Ig=O1mA # 1 CE , _ _ = #8 % (1) NP (1) =10Hz, Rg=10k0 10 aB Vomp= 6V Ig=O1mA @ & # & (2) NF (2) cE c - _ aB a) f=100HZ, Rg=10kO 8 Note}. hprpi( io FROLSKAML, AARRL THE VES. According to the value of hpr, the 2S8C1000 is classified as follows. CLASSIPICATION MIN, MAX. 28C01000-GR 200 400 28C1000-BL 350 700 h ee h PARAMETERS( Typ.) (23 7 SEH) COMMON EMITTER, Vog=6V, Ip-lmA, f=270Hz, Ta=25) CHARACTERISTIC SYMBOL | 28C1000GR | 28C01000BL UNIT AnAvre-#F rx HDHD) hie 25 15 kKQ Be RB BCADMK) bre @R 18 x10 @ yt 2 B BC HD MH) he 280 530 HAT RF TF YRCADRMR) hoe 64 1s BU 5292sc 1000 \ STATIC CHARACTERISTICS g oD M4 is @ x & d n 120 80 40 NSARM Ip (#a) 8 3 8 6 CCE pp 8 8 5 8 001 Q03 a1 2g 8 Bt 530 Ig - Vor (LOW CURRENT AND LOW VOLTAGE. REGION) a Li # Beth COMMON EMITTER Ta=25C oN a oD ee 8 w@ xR yx ds 10 n 3U98- Ti y SBE RHE Vor (Vv) ~ pg 45 ors, BR 6 6, COMMON EMITTER 1 2 3 4 5 4 Ta=25C IU9SR- Li ySHBE Vor (V) h PARAMETERS - Ip 1000 Dge 300 Lives Bh COMMON EMITTER _ Von= 6V hpe Io f =270Hz 100 Ta=25C Li, sib COMMON EMITTER & Vop=5V & Ta = 25C ; 30 a aq 10 iRo5 a 3 1 3 10. 80 100 I A i o (ma) -20 50 100 300 1000 5000 Zio FBR Ip (aa)asc 1000 h PARAMETERS Voz 6 NF - Vor wa E 1 & -_~ % QO x a ww f * B 1 % Zoo 5th Ka BR COMMON EMITTER # a Ip=lmA f =270Hz Ta=25C 5 1 5 0 3V98-2%,3MBE Von (VY) GUgR- tio SBE Vow (V) NF - Vor NF - Vor on -_ Pm 8 eo E E Bd @ tH Har # x 05 i 3 5 10 30 50 as 1 3 5 10 30 50 IL9R- xi ySMBE Vow (VV) avugse-riySRBE Vor (V) 531(Q) Rg fa RET Rg (HQ) BS Rah 532 H 10 100 2) VoE=6V f = 10Hz 1000 5000 2IV7S Rit Ig (4a) NF - Rg, Ig 10 100 IPS Be 1000 Ig (4A) 5000 100 Rg (Q) ' fa 5 RL H FAA SBE Po (mW) 20 NF - Rg,Io 10 100 ao + Bye Po - 40 60 AR ee Ig (4A) Ta 80 100 Ta (C) 1000 120 5000 140