FZ06BIA099FS
target datas heet
flowSOL 0 BI 600V/18A
● High efficiency
● Ultra fast switching frequency
● Low inductive design
● SiC in boost and H bridge
● Transformerless solar inverters
● FZ06BIA099FS
Tj=25°C, unless otherwise specified
Parameter Symbol Value Unit
Repetitive peak reverse voltage VRRM 1600 V
Th=80°C 28
Tc=80°C 38
Th=80°C 33
Tc=80°C 50
Maximum Junction Temperature Tjmax 150 °C
Input Boost MOSFET
VDS 600 V
Th=80°C 16
Tc=80°C 22
Th=80°C 54
Tc=80°C 96
Tjmax 150 °C
112
220
Tj=25°C
Tj=Tjmax
tp=10ms 220
Power dissipation Ptot
Features flow0 housing
Target Applications Schematic
A
Types
I2t-value
Maxi mum Ratings
IFAV
A2s
IFSM
Condition
Tj=Tjmax
tp limited by Tjmax
Tj=Tjmax
±20
W
IDpulse
Gate-source peak voltage
Drain to source breakdown voltage
V
A
W
A
A
DC current
Ptot
I2t
Bypass Diode
Pulsed drain current
Forward current per diode
Surge forward current
DC drain current
Power dissipation per Diode
Maximum Junction Temperature
ID
VGS
copyright by Vincotech 1 Revision: 1
FZ06BIA099FS
target datas heet
Tj=25°C, unless otherwise specified
Parameter Symbol Value Unit
Maxi mum Ratings
Condition
Input Boost Diode
Th=80°C 12
Tc=80°C 17
Th=80°C 23
Tc=80°C 41
Buck Diode
Th=80°C 8
Tc=80°C 11
Th=80°C 17
Tc=80°C 31
Buck MOSFET
Th=80°C 16
Tc=80°C 22
Th=80°C 54
Tc=80°C 96
Boost IGBT
Th=80°C 22
Tc=80°C 27
Th=80°C 50
Tc=80°C 75
tSC Tj≤150°C 6μs
VCC VGE=15V 360 V
Tj=Tjmax
Tj=25°C
tp limited by Tjmax 34
175
V
A
V
°C
W
A
VCE
ICpuls
Maximum Junction Temperature
tp limited by Tjmax
Short circuit ratings
DC collector current
Power dissipation per IGBT
Collector-emitter break down voltage
Repetitive peak collector current
Gate-emitter peak voltage
175Maximum Junction Temperature °C
tp limited by Tjmax
W
600
Tj=Tjmax
A
Tj=Tjmax
175
A
600
°C
150
±20
A
V
V
°C
V
W
VGE
Tj=Tjmax
Tjmax
Ptot
Tj=TjmaxIC
Pulsed drain current IDpulse
Ptot
Gate-source peak voltage Vgs
Maximum Junction Temperature
Power dissipation
Tjmax
Tjmax
Repetitive peak forward current
Drain to source breakdown voltage VDS
Power dissipation per Diode Ptot
DC drain current ID
W
V
A
Maximum Junction Temperature
IF
Peak Repetitive Reverse Voltage
Repetitive peak forward current
VRRM
Tjmax
Ptot
Power dissipation
Peak Repetitive Reverse Voltage
DC forward current
IFRM
DC forward current
A
Tj=Tjmax
tp limited by Tjmax
A
IF
Tc=110°C 17
IFRM
Tj=Tjmax
VRRM 600
Tj=25°C
Tj=Tjmax
Tc=110°C
Tc=25°C 112
600
60
±20
copyright by Vincotech 2 Revision: 1
FZ06BIA099FS
target datas heet
Tj=25°C, unless otherwise specified
Parameter Symbol Value Unit
Maxi mum Ratings
Condition
Thermal Properties
Insulation Properties
Vis t=2s DC voltage 4000 V
min 12,7 mm
min 12,7 mm
°C
Storage temperature Tstg -40…+125 °C
Clearance
Insulation voltage
Creepage distance
Top
Operation temperature under switching condition -40…+(Tjmax - 25)
copyright by Vincotech 3 Revision: 1
FZ06BIA099FS
target dat asheet
Parameter Symbol Unit
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
IC [A] o r
IF [A ] o r
ID [A] TjMin Typ Max
T
j
=25°C 0,7 1,06 1,3
T
j
=125°C 0,99
T
j
=25°C 0,90
T
j
=125°C 0,75
T
j
=25°C 0,01
T
j
=125°C 0,02
T
j
=25°C 0,05
T
j
=125°C
Therm al r esi st ance chip to h eat sink per ch i p
F
Z06BIA09
9
Ther m al grease
thickness≤50um
λ = 1 W/mK 2,12 K/W
T
j
=25°C 0,09
T
j
=125°C 0,2
T
j
=25°C 2,5 3 3,5
T
j
=125°C
T
j
=25°C 200
T
j
=125°C
T
j
=25°C 25000
T
j
=125°C
T
j
=25°C 15
T
j
=125°C
T
j
=25°C 12
T
j
=125°C
T
j
=25°C 75
T
j
=125°C
T
j
=25°C 6
T
j
=125°C
T
j
=25°C tbd
T
j
=125°C
T
j
=25°C tbd
T
j
=125°C
T
j
=25°C 119
T
j
=125°C
T
j
=25°C
T
j
=125°C
T
j
=25°C
T
j
=125°C
Tj=25°C 1,6
T
j
=150°C 1,9
T
j
=25°C 400
T
j
=150°C
T
j
=25°C tbd
T
j
=150°C
T
j
=25°C tbd
T
j
=150°C
T
j
=25°C tbd
T
j
=150°C
T
j
=25°C tbd
T
j
=150°C
di
(
rec
)
max T
j
=25°C tbd
/d
t
T
j
=150°C
Therm al r esi st ance chip to h eat sink per ch i p RthJH
Ther m al grease
thickness≤50um
λ = 1 W/mK 3,00 K/W
8
8
Rgon=1,7 Ω
10 480
480
20
10
0
f=1MHz
Rgon=1,7 Ω13
RDS(on)
tf
Fall time
Turn-off energy loss per pulse
Input capacitance
Eon
Qgs
Qgd
IRRM
Irm
Qrr
trr
VF
Erec
Tur n off delay t i m e
Forward voltage
Input Boost M OSFET
Reverse transfer capaci t ance
Gate to source charge
Turn-on energy loss per pulse
Output capacitance
Gate to drain charge
Total gate charge
Gate threshold voltage
Gate to Source Leakage Curr ent
Rgoff=1,7 Ω
VGS=VDS
0
tr
td(ON)
Idss
Ir
ValueConditions
Ciss
RthJH
Coss
Crss
Therm al r esi st ance chip to h eat sink per ch i p 1,3
Ther m al grease
thickness≤50um
λ = 1 W/mK
Characteristic Values
Forward voltage
Thr eshold voltage (for power loss calc. only)
Slope resi st ance (for power loss calc. only)
s
olar invert
e
Vto
rt
Bypass Diode
10 V
V
Ω
mAReverse current
18
100
18
400
10
100
0
18
Tj=25°C
14
nA
Static drai n to source ON resistance
480
600Zero Gate Voltage Drain Current
td(OFF)
Turn On Delay Time
Rise Time
Rgon=1,7 Ω
Qg
Eoff
Reverse recovery time
Peak rate of fall of recovery current
Input Boost Diode
Reverse recovered energy
Reverse leakage current
Peak recovery current
Reverse recovery charge 10 8
1200
154
2660
61
Ω
nC
A
ns
V
mWs
μC
μA
mWs
A/μs
ns
pF
Igss nA
V0,0012
V(GS)th
K/W
copyright by Vincotech 4Revision: 1
FZ06BIA099FS
target dat asheet
Parameter Symbol Unit
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
IC [A] o r
IF [A ] o r
ID [A] TjMin Typ Max
ValueConditions
Characteristic Values
T
j
=25°C 1,60
T
j
=150°C 1,90
T
j
=25°C tbd
T
j
=150°C
T
j
=25°C tbd
T
j
=150°C
T
j
=25°C tbd
T
j
=150°C
di
(
rec
)
max T
j
=25°C tbd
/d
t
T
j
=150°C
T
j
=25°C tbd
T
j
=150°C
Therm al r esi st ance chip to h eat sink per ch i p RthJH
Ther m al grease
thickness≤50um
λ = 1 W/mK 4K/W
T
j
=25°C 90
T
j
=125°C 200
T
j
=25°C 2,5 3 3,5
T
j
=125°C
T
j
=25°C 200
T
j
=125°C
T
j
=25°C 25000
T
j
=125°C
T
j
=25°C 15
T
j
=125°C
T
j
=25°C 12
T
j
=125°C
T
j
=25°C 75
T
j
=125°C
T
j
=25°C 6
T
j
=125°C
T
j
=25°C tbd
T
j
=125°C
T
j
=25°C tbd
T
j
=125°C
600
0,0012
0
VDS=VGS
4
4
18
18
480
480
20
100
400
f=1MHz 0
10
10
10
13
0
Rgon=1,7 Ω
Ther m al grease
thickness≤50um
λ = 1 W/mK
Qg
Qrr
trr
td(ON)
Rds(on)
Rgoff=1,7 Ω
Crss
V(GS)th
Igss
tr
td(OFF)
Eon
Qgd
RthJH
VF
Peak reverse recovery current
Zero Gate Voltage Drain Current Idss
Static drai n to source ON resistance
IRRM
Reverse recovered charge
Erec
Gate threshold voltage
Eoff
Ciss
Coss
Qgs
Buck MOSFET
Reverse recovery time
Reverse recovered energy
Peak rate of fall of recovery current
Diode forward voltag e
V
μC
mWs
A/μs
mΩ
1,30
pF
ns
100
mWs
2660
Rgon=1,7 Ω
Tur n off delay t i m e
Rise Time
Gate to drain charge
Gate to source charge
Turn-off energy loss per pulse
Fall time 18
Buck Diode
Input capacitance
Gate to Source Leakage Curr ent
Turn On Delay Time
tf
Output capacitance
Turn-on energy loss per pulse
Total gate charge
Reverse transfer capaci t ance
Therm al r esi st ance chip to h eat sink per ch i p
nA
nC
nA
ns
A
V
Tj=25°C
119
61
154
14Tj=25°C
K/W
copyright by Vincotech 5Revision: 1
FZ06BIA099FS
target dat asheet
Parameter Symbol Unit
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
IC [A] o r
IF [A ] o r
ID [A] TjMin Typ Max
ValueConditions
Characteristic Values
T
j
=25°C 5 5,8 6,5
T
j
=150°C
T
j
=25°C 1,20
T
j
=150°C 1,25
T
j
=25°C 0,14
T
j
=150°C
T
j
=25°C 350
T
j
=150°C
Therm al r esi st ance chip to h eat sink per ch i p RthJH
Ther m al grease
thickness≤50um
λ = 1 W/mK 1,92 K/W
Note: For the Boost I GBT only LF switching allowed
R25 Tol. ±5% Tj=25°C 20,9 22 23,1
k
Ω
R100 Tj=100°C 1486 Ω
* see details on Thermistor charts on Figure 2.
pF
3998
32
Tj=25°C
Gate emitter threshold voltage
QGate
Boost IGBT
Gate-emitter leakage current
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Integrated Gate resistor
0
Gate charge
Input capacitance
Output capacitance
Reverse transfer capaci t ance
Cies
480 Tj=25°C
ICES
VGE(th)
VCE(sat)
K
0
Ω
15 nC20
mW200
B-value B(25/100) Tol. ±3%
Power dissi pation P
Rated resistan ce*
Thermistor
600
Rgint
VCE=VGE
f=1MHz
Coss
Crss
IGES
15
0mA
nA
V
V
20
7
0,0029
25
Tj=25°C
Tj=25°C
71
1100
120
none
copyright by Vincotech 6Revision: 1
FZ06BIA099FS
target datasheet
Ordering Code in DataMatr i x as in packaging barcode as
without therm al paste 12mm housi ng 10-FZ06BIA099FS-P893E P893E P893E
● FZ06BIA099FS
Outline
Pinout
Ordering Code & Marking
Ordering Code and Marking - Outline - Pinout
copyright by Vincotech 7 Revisi on: 1
FZ06BIA099FS
target datasheet
PRODUCT STATUS DEF INITIONS
Formative or In Design
First Product ion
Full Production
DISCLAIMER
LIFE SUPPORT POLICY
As used herein: ● FZ06BIA099FS
The information given in t hi s datasheet des cribes the t ype of component and does not represent assured characteristics. For tested
values pleas e contact Vincotec h.Vincot ech reserves the right to m ake changes without further notic e to any products herei n to improve
reliability, func t i on or design. Vincot ech does not ass ume any liability arising out of the application or use of any product or ci rcuit
described herei n; neither does it convey any lic ense under its pat ent rights, nor the rights of ot hers.
Vincot ech products are not authorised f or use as crit i cal com ponents in lif e support devices or system s without the express written
approval of Vincotech.
1. Life support devices or s ystems are devices or system s which, (a) are intended f or surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perf orm when properly used in accordance with inst ructions for us e provided in labelling can be
reasonably expected t o result in si gni ficant inj ury to the user.
2. A critical component is any component of a life support device or sys tem whose fail ure to perform can be reasonably expected to
cause t he failure of the l i fe support devic e or system, or to aff ect its safety or eff ectiveness .
Target
Product StatusDatasheet Status Defini t ion
This datasheet contains the design specifications for
product development. Specifications may change in any
manner without notice. The data contained is exclusively
intended for technically trained staff.
Preliminary
This datasheet cont ains pr elim inar y data, and
supplementary data may be published at a later date.
Vincotech reserves t he r ight to make changes at any time
without notice in order to improve design. The data
contained is exclusively intended for technically trained
staff.
Final
This datasheet contains final specifications. Vincot ech
reserves the right to make changes at any time without
notice in order to im pr ove design. The data contained is
exclusively intended for technically trained staff.
copyright by Vincotech 8 Revisi on: 1
