SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A Z % RT ... Replacement Type; consult manufacturer. Indicators of separate manufacturers producing same type number (non-JEDEC) whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D.A.1.A.) is an integral part of the type number {in Type No. Cross Index, Technical Data Sections) to avoid the possibility of confusing the devices of one manufacturer with the devices of others. SYMBOLS & CODES COMMON TO MORE THAN ONE TECHNICAL SECTION LINE No. Vv New Type Revised Specifications # Non-JEDEC Type manufactured t_ @- TYPE No. outside U.S.A. i 6 , i LINE TYPE OLL. IN |M E[BVel No. No. DISS. | fab [FREE |A M @25C AIR. [XP Ww we vi ; @ With infinite heat sink Following symbols indicate temperature at which derating starts: T- 40c i- ec = 100% * 45C - 7C 4 Min. #-~ 50C =A 85C T- tae Gain bandwidth product (f,) %* Maximum frequency of oscillation QD ~ Figure of merit (frequency for unity power gain} A Minimum Z- Maximum Q ~ With infinite heat sink E * 50-65C A Ambient 70-80c C Case # - 85-100C J Junction # 110-125C S Storage T 130-135C $ 140-165C 170-200C Over 200C STRUCTURE (All Sections A Alloy Except 6 & 7} Switching type, also listed in Section 12 AN Annular - a . . D ~ Diffused or drift Chopper, also listed in Section 13, Category 10 pM Diftused These types also included elsewhere with other E 7 E, tons fee characteristics. See Type No. Cross Index for pt axial : EA Epitaxial annular alternate line no. EM Epitaxial mesa Radiation Resistant Devices, also listed in FE _ Feeed Section 13, Category 13, G ~ Grown GA Gallium Arsenide H Hometaxial MA Mico alloy MD Micro alloy diffused ME Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alioy diffused PE Ptanar epitaxial PL Planar Ss Surface barrier * Matched pair A Switching, other uses Z Chopper, other uses Z Noise figure 8db or below t Plastic package % Overlay ye i \ I ' Mai , cao |BVebo | Icbo. BIAS Cob |STRUC|Y200 le 0 le @MAX! Veb le hfe hoe hie hre -TURE | s/a JAD Veb TO200/D E Vv) A) Al Vv (A) mh 1 Ser, 9 fe QD lo A- lp b h parameters are Pope Pine Mb 74] Maximum D Vee 0) t- Nee A Minimum Pulsed Maximum At Va, Max. V., (See Mfr. Spec.) # aise 68 CB 8 hee Typical CEX yptca %* Available in selected ranges -1 * ~ 'cER CES AtTemp.> 28 =A 'cEO ~ AtTemp. 25C Case # Pulsed or Peak ~ i hb - q iis 7] Maximum $ Co T-c, $ Minimum po $ Tetrode # - BVcex or punch-through D av # Radiation Resistant Device CES (A - BV eo (sus) {Also See Above) .- BVoER * Pulsed $- Indicates min. valves given for BY cb, EV ceo, and BV abo,IN ORDER OF (1) MAX COLLECTOR DISSIPATION TYPE Icbo Cob |STRUC/Y200 |E 0 No. DISS. | fab A @MAX -TURE | s/a |AD @25C Veb T0200/D E D29A8 330m : 4.0 100n 10D |2.0md TO98 |B D29A11t 330m 5.0 |500m# 50n 10D |2.0mo TO98 |B .OSu 2N327 337m 20} 50m |.00ug |6.0 {1.0m m . : 2N329 337m 20| 50m |.00uf |6.0 {1.0m USAF5 18ESO65 USAF5 16ES047 49 BC281C BC292A PET4059 PET4062 TE5367 FTO0O19H PET3702 PET8301 PET8304 BC404y! BC405B FT1746 AT430 AT433 AT436 GME0404-1 ME502 ME513 PET3905 TE5379 PET4126 MM2894t BF317 RT2460 * CcD93* * cDg96* * cp912* * co942* * cD972* * 100M8A 6.8m 3.6m 3.6m 3.6m 90Ms |2.0m 100M8A/3.6m 100M5A}3.6m 100MSA|3.6m 150M {3.6m 150M _ |3.6m 150M8 [2.0m 200MA8|2.0m 200MA8|2.0m 200MA8|2.0m 200M8A/3.6m m 200M$A| 2.9m m 200M8A|2.8m 200MSA|3.5m 200M8A/ 2.8m 5m 250M8A/3.5m 400MS8A| 2.1m 500M |2.0m 1.068 |2.0m 2.2m D.A.T.A. 1 10 Z| 30 1.0uZb | 32 A 100nD 10nd 10n@ 100ng 5.00 |1,0m | 150 iam (65k 5.0% | 10mg |200 5.00 }1. 45 +.0mh 2.0m@ 1.0mS 5 10mg 1.0m% 2.0m 2.0m 40 20 20 40 1 50 1.0m | 100 120 70 60 1. 60 10Z|1.0ud | 50 10] 1.0uA 102) 1.0uA 10B| 1.0uA 102] 1.0uA SYMBOLS AND CODES EXPLAINED IN INTERPRETER 20 0 3.3 X34 TO18 TO18 R110 |A R110 jA TO106|A TO18 |Z R110 |A R110 |A R110 TO92 TO92 TO18 TO18 TO18 TO18 X45 T0106) A R110 jA R110 |A TO106|A R110 |A 49