2SJ552(L),2SJ552(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-651B (Z) 3rd. Edition Jun 1998 Features * Low on-resistance R DS(on) = 0.042 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline LDPAK 4 4 D 1 G 1 S 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ552(L),2SJ552(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS -60 V Gate to source voltage VGSS 20 V Drain current ID -20 A -80 A -20 A -20 A 34 mJ 75 W Drain peak current I D(pulse) Note1 Body-drain diode reverse drain current I DR Avalanche current I AP Avalanche energy Note3 EAR Note3 Note2 Channel dissipation Pch Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C Note: 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS -60 -- -- V I D = -10mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS 20 -- -- V I G = 100A, VDS = 0 Zero gate voltege drain current I DSS -- -- -10 A VDS = -60 V, VGS = 0 Gate to source leak current I GSS -- -- 10 A VGS = 16V, VDS = 0 Gate to source cutoff voltage VGS(off) -1.0 -- -2.0 V I D = -1mA, VDS = -10V Static drain to source on state RDS(on) -- 0.042 0.055 I D = -10A, VGS = -10V Note4 resistance RDS(on) -- 0.065 0.095 I D = -10A, VGS = -4V Note4 Forward transfer admittance |yfs| 10 16 -- S I D = -10A, VDS = -10V Note4 Input capacitance Ciss -- 1750 -- pF VDS = -10V Output capacitance Coss -- 800 -- pF VGS = 0 Reverse transfer capacitance Crss -- 180 -- pF f = 1MHz Turn-on delay time t d(on) -- 16 -- ns VGS = -10V, I D = -10A Rise time tr -- 100 -- ns RL = 3 Turn-off delay time t d(off) -- 230 -- ns Fall time tf -- 140 -- ns Body-drain diode forward voltage VDF -- -1.0 -- V I F = -20A, VGS = 0 Body-drain diode reverse recovery time -- 100 -- ns I F = -20A, VGS = 0 diF/ dt =50A/s Note: 2 4. Pulse test t rr 2SJ552(L),2SJ552(S) Main Characteristics Power vs. Temperature Derating -1000 I D (A) -30 40 20 -10 Op -3 -1 Operation in this area is limited by R DS(on) (1 er sh ot) (T atio c= n 25 C ) -0.3 50 100 150 Case Temperature 200 Tc (C) Ta = 25 C -0.1 -0.1 -0.3 -1 -3 -10 -30 -100 Drain to Source Voltage V DS (V) Typical Transfer Characteristics Typical Output Characteristics -8 V -40 -6 V Pulse Test -5 V -4 V (A) -10 V -50 -4.5 V ID -50 -30 -3.5 V -20 -3 V -10 Drain Current I D (A) 10 s 10 0 PW 1 s = m 10 s DC ms -100 60 0 Drain Current Maximum Safe Operation Area -300 Drain Current Channel Dissipation Pch (W) 80 -40 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) Tc = -25 C 25 C -30 -20 -10 VGS = -2.5 V 0 V DS = -10 V Pulse Test 0 75 C -1 -2 -3 Gate to Source Voltage -4 -5 V GS (V) 3 2SJ552(L),2SJ552(S) Drain to Source Saturation Voltage V DS(on) (V) -2.0 Pulse Test -1.6 -1.2 I D = -20 A -0.8 Drain to Source On State Resistance R DS(on) ( ) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 1 0.5 0.2 0.1 VGS = -4 V -10 V 0.05 -10 A -0.4 -5 A -2 A 0.02 Pulse Test 0.01 4 -4 -8 -12 Gate to Source Voltage -16 -20 V GS (V) Static Drain to Source on State Resistance vs. Temperature 0.2 Pulse Test 0.16 -10 A 0.12 I D = -20 A -5 A 0.08 V GS = -4 V -20 A -5, -10 A 0.04 -10 V 0 -40 0 40 80 120 160 Case Temperature Tc (C) -1 -2 -10 -20 Drain Current -50 -100 I D (A) Forward Transfer Admittance vs. Drain Current 100 Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance R DS(on) ( ) 0 -5 30 Tc = -25 C 10 25 C 3 75 C 1 0.3 V DS = -10 V Pulse Test 0.1 -0.1 -0.3 -1 -3 -10 -30 Drain Current I D (A) -100 2SJ552(L),2SJ552(S) Body-Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 10000 Pulse Test 500 Capacitance C (pF) Reverse Recovery Time trr (ns) 1000 200 100 50 3000 Ciss 1000 100 Crss di / dt = 50 A / s VGS = 0, Ta = 25 C 20 30 10 -0.3 -1 -3 -10 Reverse Drain Current -30 0 -100 I DR (A) -100 0 V GS V DD = -10 V -25 V -50 V I D = -20 A 64 16 32 48 Gate Charge Qg (nc) -30 -40 -50 -8 -12 -16 -20 80 V GS (V) 1000 500 Switching Time t (ns) -80 V DS -4 Gate to Source Voltage V DS (V) Drain to Source Voltage -20 -20 Switching Characteristics 0 V DD = -10 V -25 V -50 V -10 Drain to Source Voltage V DS (V) Dynamic Input Characteristics 0 -60 VGS = 0 f = 1 MHz 10 -0.1 -40 Coss 300 V GS = -10 V, V DD = -30 V PW = 10 s, duty < 1 % td(off) 200 tf 100 50 20 tr td(on) 10 -1 -3 -0.1 -0.3 Drain Current -10 -30 -100 I D (A) 5 2SJ552(L),2SJ552(S) Repetitive Avalanche Energy EAR (mJ) Reverse Drain Current I DR (A) -50 Maximum Avalanche Energy vs. Channel Temperature Derating Reverse Drain Current vs. Source to Drain Voltage -40 -10 V -30 V GS = 0, 5 V -5 V -20 -10 Pulse Test 0 -0.4 -0.8 -1.2 Source to Drain Voltage -1.6 -2.0 50 I AP = -20 A V DD = -25 V duty < 0.1 % Rg > 50 40 30 20 10 0 25 50 100 125 150 Channel Temperature Tch (C) V SD (V) Avalanche Test Circuit V DS Monitor 75 Avalanche Waveform EAR = L 1 2 * L * I AP * 2 I AP Monitor VDSS VDSS - V DD V (BR)DSS I AP Rg D. U. T V DS VDD ID Vin -15 V 50 0 6 VDD 2SJ552(L),2SJ552(S) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance s (t) 3 Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 ch - c(t) = s (t) * ch - c ch - c = 1.67 C/W, Tc = 25 C 0.1 0.05 PDM 0.02 1 lse 0.0 t pu o h 1s 0.03 0.01 10 D= PW T PW T 100 1m 100 m 10 m Pulse Width 1 Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 10 PW (S) Vin 10% D.U.T. RL 90% Vin 50 -10 V V DD = -30 V 90% 90% Vout td(on) 10% 10% tr td(off) tf 7 2SJ552(L),2SJ552(S) Package Dimensions 1.2 0.2 0.4 0.1 2.54 0.5 2.54 0.5 L type 2.54 0.5 (1.4) (1.5) (1.5) 1.27 0.2 3.0 +0.3 -0.5 2.59 0.2 4.44 0.2 8.6 0.3 10.0 +0.3 -0.5 10.2 0.3 1.27 0.2 0.76 0.1 1.3 0.2 11.3 0.5 4.44 0.2 11.0 0.5 1.2 0.2 0.86 +0.2 -0.1 8.6 0.3 10.0 +0.3 -0.5 (1.5) 10.2 0.3 (1.4) Unit: mm 1.3 0.2 0.1 +0.2 -0.1 2.59 0.2 0.4 0.1 0.86 +0.2 -0.1 2.54 0.5 S type Hitachi Code EIAJ JEDEC 8 LDPAK -- -- Cautions 1. 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