European PowerSemiconductor and Electronics Company Marketing Information T 2156 N / T 2159 N o75 Cathode o75 o75 o75 o3,5+0,1 x 3,5 deep on both sides Cathode Anode Anode HK plug 4,8 x 0,8 o3,5+0,1 x 3,5 deep on both sides HK plug 4,8 x 0,8 3 3 G plug 2,8 x 0,8 G plug 2,8 x 0,8 VWK Nov. 1996 T 2159 N Elektrische Eigenschaften Hochstzulassige Werte Electrical properties Maximum rated values Periodische Vorwarts- und RuckwartsSpitzensperrspannung Vorwarts-Stospitzensperrspannung Ruckwarts-Stospitzensperrspannung repetitive peak forward off-state and reverse voltages non-repetitive peak forward off-state voltage non-repetitive peak reverse voltage Durchlastrom-Grenzeffektivwert RMS on-state current Dauergrenzstrom average on-state current Stostrom-Grenzwert surge current Grenzlastintegral I2 t-value tvj = -40C...t vj max VDRM , VRRM tvj = -40C...t vj max VDSM tvj = +25C...t vj max VRSM ITRMSM tc = 85C critical rate of rise of on-state current Kritische Spannungssteilheit critical rate of rise of off-state voltage DIN IEC 747-6, f= 50 Hz, V A ITSM 44000 A 1) 40000 A 2930 A I2 t tvj = tvj max , tp = 10 ms Kritische Stromsteilheit V 2159 A tvj = tvj max , tp = 10 ms tvj = 25C, t p = 10 ms V 1) ITAVM tc = 64C tvj = 25C, t p = 10 ms 2000 2200 2400 2600 2800 2000 2200 2400 2600 2800 2100 2300 2500 2700 2900 4600 (diT/dt)cr 9,68 * 10 6 A2s 8 * 10 6 A2s 150 A/s vL=10 V, i GM= 1,6 A, di G/dt = 1,6 A/s tvj = tvj max , vD =0,67 V DRM (dvD/dt)cr 5.Kennbuchstabe/5th letter C 500 V/s 5.Kennbuchstabe/5th letter F 1000 V/s Charakteristische Werte Characteristic values Durchlaspannung on-state voltage tvj = tvj max , iT = 8800 A vT Schleusenspannung threshold voltage tvj = tvj max VT(TO) Ersatzwiderstand slope resistance tvj = tvj max rT Zundstrom gate trigger current tvj = 25 C, v D = 6 V IGT max. 300 mA Zundspannung gate trigger voltage tvj = 25 C, v D = 6 V VGT max. 300 V Nicht zundender Steuerstrom gate non-trigger current tvj = tvj max , vD = 6 V IGD tvj = tvj max , vD = 0,5 V DRM max. 2,65 V 1,05 V 0,154 m max. 10 mA max. 5 mA Nicht zundende Steuerspannung gate non-trigger voltage tvj = tvj max , vD = 0,5 V DRM VGD max. 0,25 V Haltestrom holding current tvj = 25 C, v D = 6 V, R A = 5 IH max. 300 mA Einraststrom latching current tvj = 25 C,v D = 6 V, R GK 10 IL max. 1500 mA Vorwarts- und Ruckwarts-Sperrstrom forward off-state and reverse currents tvj = tvj max, vD = VDRM , vR = VRRM i D, i R max. 250 mA Zundverzug gate controlled delay time tgd max. 300 s Freiwerdezeit circuit commutated turn-off time DIN IEC 747-6, t vj=25C, i GM=1,6 A, diG/dt=1,6 A/s tvj=tvj max , iTM=iTAVM , vRM=100 V, vDM=0,67v DRM , dvD/dt=20V/s,diT/dt=10A/s, 4.Kennbuchstabe/4th letter O tq typ. 250 s iGM = 1,6 A, di G /dt = 1,6 A/s, t g = 20 s Thermische Eigenschaften Thermal properties Innerer Warmewiderstand thermal resistance, junction to case Kuhlflache/cooling surface RthJC beidseitig/two-sided, =180 sin 0,0099 C/W beidseitig/two-sided, DC Ubergangs-Warmewiderstand thermal resistance, case to heatsink Kuhlflache/cooling surface 0,0092 C/W RthCK beidseitig/two-sided 0,0025 C/W einseitig/single-sided 0,005 C/W Hochstzul.Sperrschichttemperatur max. junction temperature tvj max Betriebstemperatur operating temperature tc op -40...+125 C 125 C Lagertemperatur storage temperature tstg -40...+150 C Mechanische Eigenschaften Mechanical properties Si-Element mit Druckkontakt, Amplifying- Si-pellet with pressure contact, amplifying Gate gate Anprekraft clamping force F Gewicht weight G Kriechstrecke creepage distance Feuchteklasse humidity classification DIN 40040 Schwingfestigkeit vibration resistance f = 50 Hz Gehause case 1) 42...95 kN typ. 1200 g 25 mm Gehausegrenzstrom 36 kA (50Hz Sinushalbwelle). / Current limit of case 36 kA (50Hz sinusoidal half-wave). C 50 m/s Titelseite / front page T 2159 N 12 7 180 6 10 120 0 90 PTAV [kW] 5 iT [kA] 8 60 = 30 4 6 3 4 2 2 1 0 0,5 1 1,5 2 2,5 3 vT [V] T 2159 N / 1 0 0 3,5 1 1,5 2 2,5 3 ITAV [kA] 3,5 Bild / Fig. 2 Durchlaverlustleistung / On-state power loss PTAV = f(ITAV) Parameter: Stromfluwinkel / Current conduction angle Bild / Fig. 1 Grenzdurchlakennlinie / Limiting on-state characteristic iT = f(vT) t vj = tvj max 10 PTAV [kW] 0,5 T 2159 N / 2 140 0 8 DC 120 tC [C] 100 180 6 90 0 120 60 80 = 30 4 60 2 40 0 0 1 2 3 T 2159 N / 3 4 ITAV [kA] = 30 20 0 5 0,5 60 1 1,5 90 2 T 2159 N / 5 120 180 2,5 I TAVM [kA] 3 Bild / Fig. 5 Hochstzulassige Gehausetemperatur / Maximum allowable case temperature tc = f(ITAVM) Beidseitige Kuhlung / Two sided cooling Parameter: Stromfluwinkel / current conduction angle Berechnungsgrundlage PTAV (Schaltverluste gesondert berucksichtigen) / Calculation base PTAV (switching losses should be condidered separately) Bild / Fig. 3 Durchlaverlustleistung / On-state power loss PTAV = f(ITAV) Parameter: Stromfluwinkel / Current conduction angle 140 3 2 0 120 tC [C] 100 vG [V] 10 1 7 5 4 3 a b c 2 80 10 0 7 5 4 3 60 40 20 = 30 0 T 2159 N / 6 1 90 120 60 2 180 3 2 DC 4 ITAVM [kA] 5 Bild / Fig. 6 Hochstzulassige Gehausetemperatur / Maximum allowable case temperature t c = f(ITAVM) Beidseitige Kuhlung / Two sided cooling Parameter: Stromfluwinkel / current conduction angle Berechnungsgrundlage PTAV (Schaltverluste gesondert berucksichtigen) / Calculation base PTAV (switching losses should be condidered separately) 10 -1 1 10 2 T 2159 N / 8 3 4 5 6 7 102 2 3 4 5 6 7 103 2 3 4 5 6 7 104 iG [mA] Bild / Fig. 8 Steuercharakteristik mit Zundbereichen / Gate characteristic with trigging areas vG = f(iG), VD = 6 V Parameter: a b c [ms] 10 1 0,5 Steuerimpulsdauer / Puls duration tg Hochstzulassige Spitzensteuerleistung Maximum allowable peak gate power [W] 20 40 60 T 2159 N 3 10 2 iTM = 4000 A 5 3 2 2000 A 1000 A 4 Qr 10 [As] 8 tgd 102 [s] 5 3 2 500 A 200 A 6 5 1 10 4 5 3 2 a 100 2 b 5 3 2 10-1 1 10 2 3 4 5 6 7 102 2 3 4 5 6 7 103 2 3 103 0 10 4 5 6 7 10 4 iGM [mA] T 2159 N / 9 2 3 4 5 6 7 101 2 3 4 5 6 7 10 2 -di/dt [A/s] T 2159 N / 10 Bild / Fig. 10 Sperrverzogerungsladung / Recovered charge Qr = f(di/dt) tvj = tvj max, vR 0,5 VRRM, vRM = 0,8 VRRM Parameter: Durchlastrom / On-state current iTM Bild / Fig. 9 Zundverzug / Gate controlled delay time t gd = f(iGM), t vj = 25C, diG/dt = iGM/1s a - Maximaler Verlauf / Limiting characteristic b - Typischer Verlauf / Typical characteristic 0,012 0,010 ZthJC [C/W] 0,008 100 A 3 0,012 0 0,010 ZthJC [C/W] 0,008 0,006 0 0,006 0,004 0,002 = 30 60 90 120 180 0,004 = 30 60 90 120 180 0,002 DC 0 -3 2 3 4 6 -2 2 3 4 6 -1 10 10 10 2 3 4 6 100 2 3 4 6 101 2 3 4 6 10 2 t [s] T 2159 N / 11 T 2159 N / 12 Analytische Elemente des transienten Warmewiderstandes ZthJC pro Zweig fur DC Analytical elements of transient thermal impedance ZthJC per arm for DC Beidseitige Kuhlung / Two-sided cooling Pos. n 1 2 0,00003 0,00039 0,000055 0,00392 3 nmax n=1 t Rthn (1-e n ) 5 0,00317 0,00438 0,0152 0,2068 1,0914 Analytische Funktion / Analytical function: ZthJC = 4 0,00123 2 3 4 6 10 0 2 3 4 6 101 2 3 4 6 102 t [s] Bild / Fig. 12 Transienter innerer Warmewiderstand / Transient thermal impedance ZthJC= f(t) Beidseitige Kuhlung / Two-sided cooling Parameter: Stromfluwinkel / Current conduction angle Bild / Fig. 11 Transienter innerer Warmewiderstand / Transient thermal impedance ZthJC= f(t) Beidseitige Kuhlung / Two-sided cooling Parameter: Stromfluwinkel / Current conduction angle R thn [C/W] n [s] 0 -3 2 3 4 6 10 10-2 2 3 4 6 10-1 6 Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. 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