European Power-
Semiconductor and
Electronics Company
VWK Nov. 1996
Marketing Information
T 2156 N / T 2159 N
3
Anode
ø75
ø75
Cathode
G
plug 2,8 x 0,8
HK
plug 4,8 x 0,8
ø3,5+0,1 x 3,5 deep
on both sides
3
Anode
ø75
ø75
Cathode
G
plug 2,8 x 0,8
HK
plug 4,8 x 0,8
ø3,5+0,1 x 3,5 deep
on both sides
T 2159 N
Elektrische Eigenschaften
Electrical properties
Höchstzulässige Werte
Maximum rated values
Periodische Vorwärts- und Rückwärts-
Spitzensperrspannung
repetitive peak forward off-state and
reverse voltages
tvj = -40°C...tvj max VDRM, VRRM
2000 2200 2400
2600 2800
V 1)
Vorwärts-Stoßspitzensperrspannung non-repetitive peak forward off-state
voltage
tvj = -40°C...tvj max VDSM
2000 2200 2400
2600 2800
V
Rückwärts-Stoßspitzensperrspannung non-repetitive peak reverse voltage tvj = +25°C...tvj max VRSM
2100 2300 2500
2700 2900
V
Durchlaßstrom-Grenzeffektivwert RMS on-state current ITRMSM 4600 A
Dauergrenzstrom average on-state current tc = 85°C ITAVM 2159 A
tc = 64°C 2930 A
Stoßstrom-Grenzwert surge current tvj = 25°C, tp = 10 ms ITSM 44000 A 1)
tvj = tvj max, tp = 10 ms 40000 A
Grenzlastintegral I2 t-value tvj = 25°C, tp = 10 ms I2 t9,68 · 106A2s
tvj = tvj max, tp = 10 ms 8 · 106A2s
Kritische Stromsteilheit critical rate of rise of on-state current DIN IEC 747-6, f= 50 Hz, (diT/dt)cr 150 A/µs
vL=10 V, iGM= 1,6 A, diG/dt = 1,6 A/µs
Kritische Spannungssteilheit critical rate of rise of off-state voltage tvj = tvj max, vD =0,67 VDRM (dvD/dt)cr
5.Kennbuchstabe/5th letter C 500 V/µs
5.Kennbuchstabe/5th letter F 1000 V/µs
Charakteristische Werte
Characteristic values
Durchlaßspannung on-state voltage tvj = tvj max, iT = 8800 A vTmax. 2,65 V
Schleusenspannung threshold voltage tvj = tvj max VT(TO) 1,05 V
Ersatzwiderstand slope resistance tvj = tvj max rT0,154 mΩ
Zündstrom gate trigger current tvj = 25 °C, vD = 6 V IGT max. 300 mA
Zündspannung gate trigger voltage tvj = 25 °C, vD = 6 V VGT max. 300 V
Nicht zündender Steuerstrom gate non-trigger current tvj = tvj max, vD = 6 V IGD max. 10 mA
tvj = tvj max, vD = 0,5 VDRM max. 5 mA
Nicht zündende Steuerspannung gate non-trigger voltage tvj = tvj max, vD = 0,5 VDRM VGD max. 0,25 V
Haltestrom holding current tvj = 25 °C, vD = 6 V, RA = 5 ΩIHmax. 300 mA
Einraststrom latching current tvj = 25 °C,vD = 6 V, RGK ≥ 10 ΩILmax. 1500 mA
iGM = 1,6 A, diG /dt = 1,6 A/µs, tg = 20 µs
Vorwärts- und Rückwärts-Sperrstrom forward off-state and reverse currents tvj = tvj max, vD = VDRM, vR = VRRM iD, iRmax. 250 mA
Zündverzug gate controlled delay time DIN IEC 747-6, tvj=25°C, iGM=1,6 A,
di
G
/dt=1,6 A/µs tgd max. 300 µs
Freiwerdezeit circuit commutated turn-off time tvj=tvj max, iTM=iTAVM, vRM=100 V,
vDM=0,67vDRM, dvD/dt=20V/µs,-
diT/dt=10A/µs, 4.Kennbuchstabe/4th
letter O
tqtyp. 250 µs
Thermische Eigenschaften
Thermal properties
Innerer Wärmewiderstand thermal resistance, junction to case Kühlfläche/cooling surface RthJC
beidseitig/two-sided, Θ =180° sin 0,0099 °C/W
beidseitig/two-sided, DC 0,0092 °C/W
Übergangs-Wärmewiderstand thermal resistance, case to heatsink Kühlfläche/cooling surface RthCK
beidseitig/two-sided 0,0025 °C/W
einseitig/single-sided 0,005 °C/W
Höchstzul.Sperrschichttemperatur max. junction temperature tvj max 125 °C
Betriebstemperatur operating temperature tc op -40...+125 °C
Lagertemperatur storage temperature tstg -40...+150 °C
Mechanische Eigenschaften
Mechanical properties
Si-Element mit Druckkontakt, Amplifying-
Gate
Si-pellet with pressure contact, amplifying
gate
Anpreßkraft clamping force F42...95 kN
Gewicht weight Gtyp. 1200 g
Kriechstrecke creepage distance 25 mm
Feuchteklasse humidity classification DIN 40040 C
Schwingfestigkeit vibration resistance f = 50 Hz 50 m/s²
Gehäuse case Titelseite / front page
1) Gehäusegrenzstrom 36 kA (50Hz Sinushalbwelle). / Current limit of case 36 kA (50Hz sinusoidal half-wave).
Bild / Fig. 1
Grenzdurchlaßkennlinie / Limiting on-state characteristic iT = f(vT)
tvj = tvj max
Bild / Fig. 2
Durchlaßverlustleistung / On-state power loss PTAV = f(ITAV)
Parameter:Stromflußwinkel / Current conduction angle θ
Bild / Fig. 3
Durchlaßverlustleistung / On-state power loss PTAV = f(ITAV)
Parameter:Stromflußwinkel / Current conduction angle θ
Bild / Fig. 5
Höchstzulässige Gehäusetemperatur / Maximum allowable case temperature
tc = f(ITAVM)
Beidseitige Kühlung / Two sided cooling
Parameter:Stromflußwinkel / current conduction angle θ
Berechnungsgrundlage PTAV (Schaltverluste gesondert berücksichtigen) /
Calculation base PTAV (switching losses should be condidered separately)
Bild / Fig. 6
Höchstzulässige Gehäusetemperatur / Maximum allowable case temperature
tc = f(ITAVM)
Beidseitige Kühlung / Two sided cooling
Parameter:Stromflußwinkel / current conduction angle θ
Berechnungsgrundlage PTAV (Schaltverluste gesondert berücksichtigen) /
Calculation base PTAV (switching losses should be condidered separately)
Bild / Fig. 8
Steuercharakteristik mit Zündbereichen / Gate characteristic with trigging
areas vG = f(iG), VD = 6 V
Parameter:
Steuerimpulsdauer / Puls duration tg
Höchstzulässige Spitzensteuerleistung
Maximum allowable peak gate power
a b c
[ms]10 1 0,5
[W]20 40 60
T 2159 N
T 2159 N / 1
12
10
8
6
4
2
0
iT
[kA]
vT [V]
0,5 1 1,5 2 2,5 3 3,5
T 2159 N / 2
PTAV
[kW]
ITAV [kA]
7
6
5
4
3
2
1
032,521,510,50 3,5
120°
90°
60°
θ = 30°
180°
T 2159 N / 3
PTAV
[kW]
ITAV [kA]
10
8
6
4
2
0012345
0Θ
180°
120°
90°
60°
θ = 30°
DC
T 2159 N / 5
tC
[°C]
ITAVM [kA]
180°
120°
90°
60°θ = 30°
140
120
100
80
60
40
200 0,5 1 1,5 2 2,5 3
T 2159 N / 6
tC
[°C]
ITAVM [kA]
140
120
100
80
60
40
200 1 2 3 4 5
0Θ
180°120°
90°
60°
θ = 30°DC
T 2159 N / 8
vG
[V]
iG [mA]
101
100
10-1
101102103104
2 3 4 5 6 7 2 3 4 5 6 7 2 3 4 5 6 7
2
3
4
5
7
2
3
4
5
7
2
3
abc
0Θ
0Θ
T 2159 N
Bild / Fig. 9
Zündverzug / Gate controlled delay time tgd = f(iGM), tvj = 25°C,
diG/dt = iGM/1µs
a -Maximaler Verlauf / Limiting characteristic
b -Typischer Verlauf / Typical characteristic
Bild / Fig. 10
Sperrverzögerungsladung / Recovered charge Qr = f(di/dt)
tvj = tvj max, vR ≤ 0,5 VRRM, vRM = 0,8 VRRM
Parameter: Durchlaßstrom / On-state current iTM
Bild / Fig. 11
Transienter innerer Wärmewiderstand / Transient thermal impedance
ZthJC= f(t)
Beidseitige Kühlung / Two-sided cooling
Parameter:Stromflußwinkel / Current conduction angle θ
Bild / Fig. 12
Transienter innerer Wärmewiderstand / Transient thermal impedance
ZthJC= f(t)
Beidseitige Kühlung / Two-sided cooling
Parameter:Stromflußwinkel / Current conduction angle θ
Analytische Elemente des transienten Wärmewiderstandes ZthJC pro Zweig für DC
Analytical elements of transient thermal impedance ZthJC per arm for DC
Pos. n
Rthn
[°C/W]
τn [s]
Beidseitige Kühlung / Two-sided cooling
1 2 3 4 5 6
Analytische Funktion / Analytical function:
nmax
Σ
n=1
ZthJC = Rthn (1-e )
t
-
τn
0,00003 0,00039 0,00123 0,00317 0,00438
0,000055 0,00392 0,0152 0,2068 1,0914
T 2159 N / 12
ZthJC
[°C/W]
t [s]
0,012
0,010
0,008
0,006
0,004
0,002
010-210-1100101102
10-32 3 4 6 2 3 4 6 2 3 4 6 2 3 4 6 2 3 4 6
60°
DC
0Θ
90°
Θ = 30°
120°
180°
T 2159 N / 11
ZthJC
[°C/W]
t [s]
0,012
0,010
0,008
0,006
0,004
0,002
010-210-1100101102
10-32 3 4 6 2 3 4 6 2 3 4 6 2 3 4 6 2 3 4 6
Θ = 30°
60°
90°
120°
180°
T 2159 N / 10
Qr
[µAs]
-di/dt [A/µs]
100101102
2 3 4 5 6 7 2 3 4 5 6 7
104
103
2
3
4
5
6
8
24000 A
iTM =
2000 A
1000 A
100 A
200 A
500 A
T 2159 N / 9
tgd
[µs]
iGM [mA]
10-1
101102103104
2 3 4 5 6 7 2 3 4 5 6 7 2 3 4 5 6 7
a
100
101
102
103
2
3
5
2
3
5
2
3
5
2
3
5
b
0Θ
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