Diodes Array Ultra High-Speed Switching Diode FMN1/FMP1/IMN10/IMN11/IMP11 UMN1N/UMP1N/UMN11N/UMP11N @Applications @External dimensions (Units: mm) Ultra high speed switching FMNI/EMP4 ! UMNIN/UMPIN 2802 | + i ot02 1 *92 i 200.2 @Features eee a PSS patos . . . 9.95 0.98 220s : |gas 085: ov, 1)Three or four diodes contained in same area i ah a me ' ' 6 Moet as SMD3 and UMD3. oe at _ Be Che . . tH: ee f ae _ 2)Can be mounted using automatic mounters. 2 oe i ar 6). : j ist) * . } Le2tShe 0.18008, 2 3)All diodes have the same characteristics. 03 t8ia ast, 8 ta ieads have re eame dimorsege (Ail leads have the same dimensions) a i @Construction BOHM < SMS ROHM : UMDS Silicon epitaxial planar eee IMN10/IMNGTAMPT1 UMN1 IN/UMPTIN ~29k02 1eto2 1 +9? 20+02 es eter patos 280%, 28t04 q 85.085 loz i eg gin ci 1 i$ ~0.4 feo ail g hey. 4 us be2t8is orsstoos| 2 Joa t82. 015 T8e5 ei {All wads have the same dimensions) (All leads have the same dimensions) gi ROHM : SMD6 ROHM UMD6 : oo, ElAJ : SC-74 . @Equivalent circuits (3) (4 &) @ (> 45 ) (4) (8) (6) (4) (5) (6) | r 4 : ; i f | | ; } | (2) DB 42) on) (3) (2) 4) (3) (@ @ 2 & FMNi FMP1 IMN10 IMIN11 IMP11 ) 6 @) 1} 3) 2 (2) Cy (2 = 8) UMNIN (4) {6} UMP1N ial a 4) 15) (6) UMN11N UMP11N 43 0 3 2 3s D> & & 3 = = ow High-speed switching diodesDiodes FMN1/FMP1/IMN10/IMN11/IMP11 UMN1N/UMP1N/UMN11N/UMPTIN @Absolute maximum ratings (Ta=25'C) Peak DC Peak Mean Surge Power . reverse | reverse | forward | rectifying | current | dissipation tenmetion tempersture Type | voltage | voltage | current | current | (1s) | (TOTAL) perature peratu Vam (V) | Va WW) | lew (mA) | to (mA) | tourge (A) | Pa (mw) | OO) Tsy (C) FMN1 UMNiN 80 80 80 25 250m 150/80 150 5~150 FMP1 UMP41N 80 80 80 25 250m 150/80 150 55~ 150 IMN10 80 80 300 100 4 300 150 55~-150 IMN11 | * 55~ UMN11N 80 80 300 400 4 300 150 450 | 55~150 iMP11 ang 150 | 6B UMP1iN 80 80 | 300 | 400 4 300 /150 150 55~ 150 * Not to exceed 200 mW per element. @Electrical characteristics (Ta=25C) Forward voltage Reverse current ICapacitance betwee terminals Reverse recovery time _| = ae 7 Type Ve (V) Cond. | ji, (pA) Cond. | o, (pF) Cond. tr (ns) Cond. Max. | je (ma) | Max. | va (vy) | M@% va (v) if (MHz) | Max | va Cv) | te (ma) {Measurement FMN1 . UMNIN 0.9 5 0.1 70 3.5 6 1 4 6 5 Fig.8 FMP1 : UMPIN 0.9 5 0.1 70 3.5 6 1 4 6 5 Fig.8 IMN10 1.2 100 0.1 70 3.5 6 1 4 6 5 Fig.8 IMN11 \ : UMN1iN 1.2 100 0.1 70 3.5 6 1 4 6 5 Fig.8 IMP11 UMP414N | 4.2 100 0.1 70 3.5 6 1 | 4 6 5 Fig.8 @Electrical characteristic curves (Ta=25 C) 125 50 {%o} a) 75 + 1 9 25 N\ : j 02 t 0.1 Oo 25 50 75 100-125 = 150 0 02 04 06 08 10 12 9 10 20 30 40 50 AMBIENT TEMPERATUR i Ta (C)} FORWARD VOLTAGE : Ve (Vv) REVERSE VOLTAGE: VA (V) REVERSE CURRENT : In (nA) POWER DISSIPATION : Pa / Pamax & FORWARD CURRENT: Ir (mA Fig. 1 Power reduction curve Fig. 2 Forward current vs. Fig. 3 Reverse current vs. forward voltage reverse voltage characteristic (P TYPE) characteristic (P TYPE) 44 REHMDiodes FMN1/FMP1/AAMN10/IMN11/IMP11 UMN1N/UMP1N/UMN11N/UMP11N ny o 50 1000 x 3 ~ Ta=25C o 2 5 S t=1MHz 2 10 4 Ss ab x 3 # * = 8 b be rag ta a i 2 = oi > oy oy & 2 a | wi Wy PTYPE $05 Fd y & a" 2 TYPE 3 Z oz 5 3 & 5 Go oo G2 04 06 08 10 12 209 10. 0620Cs=i 5 & 0 2 4 6 8 10 12 14 16 2 FORWARD VOLTAGE : Ve (V) REVERSE VOLTAGE: Vr (V) REVERSE VOLTAGE : Vr (V! & . : . . = Fig. 4 Forward current vs. Fig. 5 Reverse current vs. Fig. 6 Capacitance between a forward voltage reverse voltage terminals vs. g characteristic (N TYPE) characteristic (N TYPE) reverse voltage characteristic e S zr 0.01 2 F DUT. a I ~ i i | = 8 2 ka wu PULSE GENERATOR Seq]. SAMPLING 27 OUTPUT 500 3" | OSCILLOSCOPE | > i | ai | | | > 6 oO 4 uu a a INPULSE oO iam S 2 1 * 6 o 123 4 5 67 8 9 10 FORWARD CURRENT: Ir (mA) 4 [-100ns Fig. 7 Reverse recovery time vs. forward current characteristic | {a | C Otte N 7 Fig. 8 Reverse recovery time (Tr) measurement circuit Roum as