OFTOELECTROMICS GaAs INFRARED EMITTING DIODE LED55BF/CF, LED56F SEATING PLANE jo A 7 $T1331 INCHES MILLIMETERS MIN. | MAX. | MIN. | MAX. A 155 3.93 b 016 | 021 | 407 | 533 @D 209 | .230 | 5.31 | 5.84 SYMBOL NOTES @D, 180 | .188 | 4.57 | 4.77 e 100 NOM. 2.54 NOM. 2 a .050 NOM. 1.27 NOM. 2 h 030 76 j 031 | .044 79 | 1.11 k 036_| .046 G2 | 116 1 L 1.00 25.4 a 45 45 45 45 3 3 ( ; j ANODE CATHODE (CONNECTED TO CASE) ST1604 NOTES: 1. MEASURED FROM MAXIMUM DIAMETER OF DEVICE. 2. LEADS HAVING MAX. DIAMETER .021 (.633mm) MEASURED IN GAUGING PLANE .054 + .001 .Q00 (137 + 025 000mm) BELOW THE REFERENCE PLANE OF THE DEVICE SHALL BE WITHIN .007 (.778mm) THEIR TRUE POSITION RELATIVE TO A MAXIMUM WIDTH TAB. 3. FROM CENTERLINE TAB. The LED55BF/CF and LED56F are 940nm LEDs in a wide angle, TO-46 package. = Good optical to mechanical alignment m= Mechanically and wavelength matched to the TO-18 series phototransistor m Hermetically sealed package @ High irradiance levelOPTOELECTRONICS GaAs INFRARED EMITTING DIODE ue ABSO . L Storage Temperature ........ 06. ec cece bene ee eee been ee nee 65C to +150C Operating Temperature . 206. n nett e eens ~65C to +125C Soldering: Lead Temperature (Iron)... 0... ce eee et eet ene eens 240C for 5 sec.845 Lead Temperature (FIOW) 00... cece eects 260C for 10 sec.** Continuous Forward Current... 0... icc eect nen netted detente tenes 100 mA Forward Current (pw, 148; 200 HZ) 0... ence teen ett eee een eens 10A Reverse Voltage 6... ee ete etre eee e ttt enn ee enneenenes 3 Volts Power Dissipation (Ts = 25C) 0. teen een eee eee eee eben ene nes 170 mW Power Dissipation (T; = 25C) 2.0.0. e ene e enn nee e eens 1.3 WwW PARAMETER SYMBOL je . . TEST CONDITIONS Forward Voltage . Vv I; = 100 mA Reverse Leakage Current BA Va=3V Peak Emission Wavelength nm |; = 100 mA Emission Angle at 2 Power Degrees Total Power LED55BF . mw |, = 100 mA Total Power LED55CF . mw |. = 100 mA Total Power LED56F . mw |. = 100 mA Rise Time 0-90% of output . BS Fall Time 100-10% of output . BS Derate power dissipation linearly 1.70 mW/C above 25C ambient. . Derate power dissipation linearly 13.0 mW/C above 25C case. AMA flux is recommended. . Methanol or lsopranoi alcohols are recommended as cleaning agents. . Soldering iron tip %4e (1.6 mm) minimum from housing. As long as leads are not under any stress or spring tension. . Total power output, Po, is the total power radiated by the device into a solid angle of 27 steradians. NOAA GM ~OFTOELECTAONICS GaAs INFRARED EMITTING DIODE 20 2 NS <1 PULSED PW Nd 19 80 SEC MN CURRENT 5 ' 2 r+ F 5 3 & ; IcONTINUOUS 5 0.8 MS 3! H = URRENT . iH 8 MN, 2 o. PY {tf 5 os 5 i z = } NORMALIZED x a OF Tet tOOmA 2 2 Y Tar25C ! MN 0) L oF NORMALIZED TO NY Zz Tp el00mA 0.05 Tas 25C Torr 02 0.08 LA bor 002 00S Ol 02 OS ar 2 OS Oe 10 =50 25 50 73 100 rr 180 TF- FORWARD CURRENT-AMPERES TaAMBIENT TEMPERATURE -* Fig. 1. Power Output vs. Input Current ST1052 Fig. 2. Power Output vs. Temperature $1107 10 100 80 80 p= LZ 60 Fa ZA 60 Pt fl. fo - 4.0 L L an __| 49 4A 20 Tt La L. Lf as 10 va 20 f| L. 08 O86 > aia [oor 25C =86C i 7 fF FF I f f ol ll MS Tp-FORWARD CURRENT ~ AMPERES 2 & 06 [ [ | if | / . | LA [ 9 4 2 3 7 8 9 10 Ip-FORWARD CURRENT -MILLIAMPERES tL | 04 1a Ss 4 6 0 WW 12 13 Vr- FORWARD VOLTAGE VOLTS p~ FORWARD VOLTAGE VOLTS Fig. 3. Forward Voltage vs. Forward Current T1053 Fig. 4. Forward Voltage vs. Forward Current ST1056 10oo . /_|_\ 60 40 RELATIVE OUTPUT -PERCENT 20 / \ SN 80 60 40 20 0 20 40 60. eo @~ ANGULAR DISPLACEMENT FROM OPTICAL AX/S - DEGREES Fig. 5. Typical Radiation Pattern ST1055 3-163