© 2013 IXYS CORPORATION, All Rights Reserved
XPTTM 600V IGBTs
GenX3TM w/ Diode
IXXK100N60C3H1
IXXX100N60C3H1
VCES = 600V
IC90 = 100A
VCE(sat) ≤ ≤
≤ ≤
≤
2.20V
tfi(typ) = 75ns
Symbol Test Conditions Maximum Ratings
VCES TJ = 25°C to 150°C 600 V
VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC = 25°C (Chip Capability) 170 A
ILRMS Terminal Current Limit 120 A
IC90 TC = 90°C 100 A
IF110 TC = 110°C 65 A
ICM TC = 25°C, 1ms 340 A
IATC = 25°C 50 A
EAS TC = 25°C 600 mJ
SSOA VGE = 15V, TVJ = 150°C, RG = 2Ω ICM = 200 A
(RBSOA) Clamped Inductive Load @VCE ≤ VCES
tsc VGE = 15V, VCE = 360V, TJ = 150°C 10 μs
(SCSOA) RG = 10Ω, Non Repetitive
PCTC = 25°C 695 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
MdMounting Torque (TO-264) 1.13/10 Nm/lb.in.
FCMounting Force (PLUS247) 20..120 /4.5..27 N/lb.
Weight TO-264 10 g
PLUS247 6 g
DS100283B(02/13)
Extreme Light Punch Through
IGBT for 20-60kHz Switching
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVCES IC = 250μA, VGE = 0V 600 V
VGE(th) IC= 250μA, VCE = VGE 3.0 5.5 V
ICES VCE = VCES, VGE = 0V 50 μA
TJ = 125°C 4 mA
IGES VCE = 0V, VGE = ±20V ±100 nA
VCE(sat) IC= 70A, VGE = 15V, Note 1 1.68 2.20 V
TJ = 150°C 1.97 V
Features
zInternational Standard Packages
zOptimized for 20-60kHz Switching
zSquare RBSOA
zAvalanche Rated
zShort Circuit Capability
zAnti-Parallel Ultra Fast Diode
zHigh Current Handling Capability
Advantages
zHigh Power Density
zLow Gate Drive Requirement
Applications
zPower Inverters
zUPS
zMotor Drives
zSMPS
zPFC Circuits
zBattery Chargers
zWelding Machines
zLamp Ballasts
G = Gate E = Emitter
C = Collector Tab = Collector
TO-264 (IXXK)
E
G
C
PLUS247 (IXXX)
G
Tab
Tab
E
C
G
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXK100N60C3H1
IXXX100N60C3H1
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 60A, VCE = 10V, Note 1 22 40 S
Cies 4810 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 455 pF
Cres 80 pF
Qg(on) 150 nC
Qge IC = 70A, VGE = 15V, VCE = 0.5 • VCES 34 nC
Qgc 60 nC
td(on) 30 ns
tri 70 ns
Eon 2.00 mJ
td(off) 90 ns
tfi 75 ns
Eoff 0.95 1.40 mJ
td(on) 30 ns
tri 65 ns
Eon 3.00 mJ
td(off) 105 ns
tfi 115 ns
Eoff 1.40 mJ
RthJC 0.18 °C/W
RthCS 0.15 °C/W
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
Inductive load, TJ = 150°C
IC = 70A, VGE = 15V
VCE = 360V, RG = 2Ω
Note 2
Reverse Diode (FRED)
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
VF IF = 60A, VGE = 0V, Note 1 1.6 2.0 V
TJ = 150°C 1.4 1.8 V
IRM 8.3 A
trr 140 ns
RthJC 0.30 °C/W
IF = 60A, VGE = 0V, TJ = 100°C
-diF/dt = 200A/μs, VR = 300V
Inductive load, TJ = 25°C
IC = 70A, VGE = 15V
VCE = 360V, RG = 2Ω
Note 2
TO-264 Outline
Terminals: 1 = Gate
2,4 = Collector
3 = Emitter
Terminals: 1 - Gate
2 - Collector
3 - Emitter
PLUS247TM Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
© 2013 IXYS CORPORATION, All Rights Reserved
IXXK100N60C3H1
IXXX100N60C3H1
Fi g . 1. Ou tpu t C har acteri sti cs @ T
J
= 25ºC
0
20
40
60
80
100
120
140
0 0.5 1 1.5 2 2.5 3 3.5
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
12V
10V
9V
11V
7V
6V
8V
Fi g . 2. Exte n d ed Ou tpu t Ch ar acter isti cs @ T
J
= 25ºC
0
50
100
150
200
250
300
350
0 2 4 6 8 10 12 14 16 18 20
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
10V
11V
13V
12V
8V
7V
9V
14V
Fi g . 3. Ou tp ut C har acteri sti cs @ T
J
= 150º C
0
20
40
60
80
100
120
140
0 0.5 1 1.5 2 2.5 3 3.5 4
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
12V
10V
8V
9V
7V
6V
11V
Fig. 4. Dependence of V
CE(sat)
on
Junction T emperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 70A
I
C
= 35A
I
C
= 140A
Fi g . 5. C o l l ector -to -E mitter Vo l tag e vs.
Gate-to -Emitter Vo l tage
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
8 9 10 11 12 13 14 15
V
GE
- Volts
V
CE
- Volts
I
C
= 140
A
T
J
= 25ºC
70
A
35
A
Fig. 6. Input Adm ittance
0
20
40
60
80
100
120
140
160
180
4567891011
V
GE
- Volts
I
C
- Amperes
T
J
= 150ºC
25ºC
- 40ºC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXK100N60C3H1
IXXX100N60C3H1
Fi g. 7. Transco nd u ctance
0
10
20
30
40
50
60
70
80
0 20 40 60 80 100 120 140 160 180 200 220
I
C
- Amperes
g
f s
-
Siemens
TJ
= - 40ºC
25ºC
150ºC
Fig. 10. Reverse-Bias Safe Operating Area
0
20
40
60
80
100
120
140
160
180
200
220
100 150 200 250 300 350 400 450 500 550 600 650
V
CE
- Volts
I
C
- Amperes
TJ
= 150ºC
RG = 2
Ω
dv / dt < 10V / ns
Fig. 12. Maximum Transient Thermal Im pedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- ºC / W
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 20406080100120140
Q
G
- NanoCoulombs
V
GE
- Volts
VCE
= 300V
I C = 70A
I G = 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Cies
Coes
Cres
Fig . 11. F o r ward -B ias Safe Operatin g Area
0.1
1
10
100
1000
1 10 100 1000
V
DS
- Volts
I
D
- Amperes
TJ = 150ºC
TC = 25ºC
Single Pulse
25µs
1ms
10ms
VCE(sat) Limit
DC
100µs
© 2013 IXYS CORPORATION, All Rights Reserved
IXXK100N60C3H1
IXXX100N60C3H1
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
0.5
1.0
1.5
2.0
2.5
3.0
23456789101112131415
R
G
- Ohms
Eoff - MilliJoules
2
3
4
5
6
7
Eon - MilliJoules
E
off
E
on
- - - -
T
J
= 150ºC , V
GE
= 15V
V
CE
= 360V
I
C
= 50A
I
C
= 100A
Fig. 16. Inductive Turn-off Switching T imes vs.
Gate Resistance
80
100
120
140
160
180
23456789101112131415
R
G
- Ohms
t f i - Nanoseconds
80
100
120
140
160
180
200
220
240
260
280
t d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 360V
I
C
= 100A
I
C
= 50A
Fig . 14. In d u ctive Switchi ng En erg y Lo ss vs.
Collector Current
0
0.5
1
1.5
2
2.5
20 30 40 50 60 70 80 90 100
I
C
- Amperes
Eoff - MilliJoules
0
1
2
3
4
5
Eon - MilliJoules
E
off
E
on
- - - -
R
G
= 2
Ω ,
V
GE
= 15V
V
CE
= 360V
T
J
= 150ºC
T
J
= 25ºC
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
0.5
1.0
1.5
2.0
2.5
25 50 75 100 125 150
T
J
- Degrees Centigrade
Eoff - MilliJoules
1
2
3
4
5
Eon - MilliJoules
Eoff Eon - - - -
R
G
= 2
Ω ,
V
GE
= 15V
V
CE
= 360V
I
C
= 50A
I
C
= 100A
Fig. 17. Inductive T urn-off Switching Times vs.
Collector Current
50
75
100
125
150
175
200
20 30 40 50 60 70 80 90 100
I
C
- Amperes
t f i - Nanoseconds
60
80
100
120
140
160
180
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 360V
T
J
= 150ºC
T
J
= 25ºC
Fig. 18. Inductive Turn-off Switching T imes vs.
Junction Temperature
60
70
80
90
100
110
120
130
140
150
160
25 50 75 100 125 150
T
J
- Degrees Centigrade
t f i - Nanoseconds
60
80
100
120
140
160
t d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 360V
I
C
= 100A
I
C
= 50A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXK100N60C3H1
IXXX100N60C3H1
Fig. 20. Indu ctive T u rn-on Switching T imes vs.
Collector Current
0
20
40
60
80
100
120
140
20 30 40 50 60 70 80 90 100
I
C
- Amperes
t
r i - Nanoseconds
24
26
28
30
32
34
36
38
t d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 2Ω , V
GE
= 15V
V
CE
= 360V
T
J
= 25ºC
T
J
= 150ºC
Fig. 21. Ind uctive T urn-on Switching T i mes vs.
Jun c ti o n Temper atu re
0
20
40
60
80
100
120
140
160
180
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
r i - Nanoseconds
27
28
29
30
31
32
33
34
35
36
t d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 2Ω , V
GE
= 15V
V
CE
= 360V
I
C
= 100A
I
C
= 50A
Fig. 19. Indu ctive T urn -on Switching T imes vs.
Gate Resistance
20
40
60
80
100
120
140
160
180
23456789101112131415
R
G
- Ohms
t r i - Nanoseconds
20
28
36
44
52
60
68
76
84
t d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 360V
I
C
= 50A
I
C
= 100A
© 2013 IXYS CORPORATION, All Rights Reserved IXYS REF: IXX_100N60C3(7D)9-30-10-A
Fi g . 26 Maximu m tran si en t th ermal imp ed an ce ju n cti o n to case (fo r di o d e)
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pul se Wid th [ms]
Z(th) JC - [ ºC / W ]
Fig. 22. Forward Current IF Versus VF
Fig. 23. Reverse Recovery Charge Qr
Versus -diF/dt
Fig. 24. Peak Reverse Current IRM
Versus -diF/dt
Fig. 25. Dynamic Parameters Qr, IRM
Versus TVJ
Fig. 26. Recovery Time trr Versus
-diF/dt
27.
Seconds
IXXK100N60C3H1
IXXX100N60C3H1
