Order this document by MRF1035MB/D SEMICONDUCTOR TECHNICAL DATA The RF Line Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. * Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 35 Watts Peak Minimum Gain = 10 dB 35 W (PEAK), 960 - 1215 MHz MICROWAVE POWER TRANSISTORS NPN SILICON * 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR * Industry Standard Package * Nitride Passivated * Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration * Internal Input Matching for Broadband Operation MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage Rating VCES 60 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 4.0 Vdc Collector-Current -- Continuous IC 2.0 Adc Total Device Dissipation @ TC = 25C (1) Derate above 25C PD 35 200 Watts mW/C Storage Temperature Range Tstg - 65 to +150 C CASE 332A-03, STYLE 1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit RJC 5.0 C/W Thermal Resistance, Junction to Case (2) ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 20 mAdc, VBE = 0) V(BR)CES 60 -- -- Vdc Collector-Base Breakdown Voltage (IC = 20 mAdc, IE = 0) V(BR)CBO 60 -- -- Vdc Emitter-Base Breakdown Voltage (IE = 2.0 mAdc, IC = 0) V(BR)EBO 4.0 -- -- Vdc ICBO -- -- 2.0 mAdc hFE 10 40 100 -- OFF CHARACTERISTICS Collector Cutoff Current (VCB = 50 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 500 mAdc, VCE = 5.0 Vdc) 1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers. 2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Replaces MRF1035MA/D) RF DEVICE DATA MOTOROLA Motorola, Inc. 1997 MRF1035MB 1 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Cob -- 10 15 pF Common-Base Amplifier Power Gain (VCC = 50 Vdc, Pout = 35 W Peak, f = 1090 MHz) GPB 10 12.4 -- dB Collector Efficiency (VCC = 50 Vdc, Pout = 35 W Peak, f = 1090 MHz) 30 34 -- % Load Mismatch (VCC = 50 Vdc, Pout = 35 W Peak, f = 1090 MHz, VSWR = 10:1 All Phase Angles) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 50 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS (Pulse Width = 10 s, Duty Cycle = 1%) No Degradation in Power Output + - 50 Vdc + C2 L1 C3 C4 L2 DUT RF INPUT C1 Z1 Z3 Z2 Z5 Z4 Z7 Z6 Z9 Z8 Z10 RF OUTPUT C1, C2 -- 220 pF 100 mil Chip Capacitor C3 -- 0.1 F C4 -- 10 F/75 V Electrolytic L1, L2 -- 3 Turns #18 AWG, 1/8 ID Z1 - Z10 -- Microstrip, See Photomaster Board Material -- 0.031 Glass Teflon Board Material -- r = 2.5 Figure 1. 1090 MHz Test Circuit MRF1035MB 2 MOTOROLA RF DEVICE DATA 50 Pout , OUTPUT POWER (WATTS pk) Pout , OUTPUT POWER (WATTS pk) 50 1090 MHz f = 960 MHz 1215 MHz 40 30 VCC = 50 V tP = 10 s D = 1% 20 10 0 0 1 2 3 Pin, INPUT POWER (WATTS pk) 4 Pin = 3.5 W pk 40 2.5 W pk 30 2 W pk 960 2 W pk 1.5 W pk 20 1 W pk Pout = 35 W pk VCC = 50 V tP = 10 s D = 1% 14 13 12 11 10 0 1215 15 2.5 W pk 30 1090 f, FREQUENCY (MHz) Figure 3. Output Power versus Frequency G PB , POWER GAIN (dB) Pout , OUTPUT POWER (WATTS pk) 40 1 W pk 0 5 Pin = 3.5 W pk tP = 10 s D = 1% f = 1090 MHz VCC = 50 V tP = 10 s D = 1% 10 Figure 2. Output Power versus Input Power 50 1.5 W pk 20 10 0 10 20 30 VCC, SUPPLY VOLTAGE (VOLTS) 40 50 Figure 4. Output Power versus Supply Voltage 1215 Zin f = 960 MHz 1090 ZOL* 1215 f = 960 MHz 1090 1090 f, FREQUENCY (MHz) 960 1215 Figure 5. Power Gain versus Frequency Pout = 35 W pk VCC = 50 V tp = 10 s D = 1% f MHz Zin Ohms ZOL* Ohms 960 1090 1215 3.8 + j8.2 6.0 + j8.2 4.2 + j5.7 7.5 - j3.3 9.0 + j0 9.1 + j1.7 ZOL* = Conjugate of the optimum load ZOL* = impedance into which the device ZOL* = output operates at a given output ZOL* = power, voltage, and frequency. Figure 6. Series Equivalent Input/Output Impedances MOTOROLA RF DEVICE DATA MRF1035MB 3 PACKAGE DIMENSIONS F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 1 K DIM A C D F H J K D 3 2 A H STYLE 1: PIN 1. 2. 3. 4. J C SEATING PLANE INCHES MIN MAX 0.270 0.290 0.115 0.135 0.195 0.205 0.095 0.105 0.050 0.070 0.003 0.007 0.600 --- MILLIMETERS MIN MAX 6.86 7.36 2.93 3.42 4.96 5.20 2.42 2.66 1.27 1.77 0.08 0.17 15.24 --- BASE EMITTER BASE COLLECTOR CASE 332A-03 ISSUE D Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. 81-3-5487-8488 Mfax: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 INTERNET: http://motorola.com/sps MRF1035MB 4 MRF1035MB/D MOTOROLA RF DEVICE DATA