1
MRF1035MBMOTOROLA RF DEVICE DATA
The RF Line
Designed for Class B and C common base amplifier applications in short and
long pulse TACAN, IFF, DME, and radar transmitters.
•Guaranteed Performance @ 1090 MHz, 50 Vdc
Output Power = 35 Watts Peak
Minimum Gain = 10 dB
•100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
•Industry Standard Package
•Nitride Passivated
•Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
•Internal Input Matching for Broadband Operation
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage VCES 60 Vdc
Collector-Base Voltage VCBO 60 Vdc
Emitter-Base Voltage VEBO 4.0 Vdc
Collector-Current — Continuous IC2.0 Adc
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°CPD35
200 Watts
mW/°C
Storage Temperature Range Tstg –65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case (2) RθJC 5.0 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 20 mAdc, VBE = 0) V(BR)CES 60 — — Vdc
Collector-Base Breakdown Voltage
(IC = 20 mAdc, IE = 0) V(BR)CBO 60 — — Vdc
Emitter-Base Breakdown Voltage
(IE = 2.0 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0) ICBO — — 2.0 mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 500 mAdc, VCE = 5.0 Vdc) hFE 10 40 100 —
1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
Order this document
by MRF1035MB/D
SEMICONDUCTOR TECHNICAL DATA
35 W (PEAK), 960–1215 MHz
MICROWAVE POWER
TRANSISTORS
NPN SILICON
CASE 332A–03, STYLE 1
Motorola, Inc. 1997
(Replaces MRF1035MA/D)
MRF1035MB
2 MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic UnitMaxTypMinSymbol
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 50 Vdc, IE = 0, f = 1.0 MHz) Cob —10 15 pF
FUNCTIONAL TESTS (Pulse Width = 10 µs, Duty Cycle = 1%)
Common-Base Amplifier Power Gain
(VCC = 50 Vdc, Pout = 35 W Peak, f = 1090 MHz) GPB 10 12.4 — dB
Collector Efficiency
(VCC = 50 Vdc, Pout = 35 W Peak, f = 1090 MHz) η30 34 — %
Load Mismatch
(VCC = 50 Vdc, Pout = 35 W Peak, f = 1090 MHz,
VSWR = 10:1 All Phase Angles)
ψNo Degradation in Power Output
Figure 1. 1090 MHz Test Circuit
C1, C2 — 220 pF 100 mil Chip Capacitor
C3 — 0.1 µF
C4 — 10 µF/75 V Electrolytic
L1, L2 — 3 T urns #18 AWG, 1/8″ ID
Z1–Z10 — Microstrip, See Photomaster
Board Material — 0.031″ Glass Teflon
Board Material — εr = 2.5
RF
INPUT RF
OUTPUT
+50 Vdc
DUT
Z1
–
Z2
C2 +
C3 C4
L1
C1
Z3 Z4 Z5 Z7 Z9
Z6 Z8 Z10
L2
Figure 2. Output Power versus Input Power Figure 3. Output Power versus Frequency
Figure 4. Output Power versus Supply Voltage Figure 5. Power Gain versus Frequency
Figure 6. Series Equivalent Input/Output Impedances
f
MHz Zin
Ohms ZOL*
Ohms
960
1090
1215
3.8 + j8.2
6.0 + j8.2
4.2 + j5.7
7.5 – j3.3
9.0 + j0
9.1 + j1.7
Pout = 35 W pk VCC = 50 V
tp = 10 µs D = 1%
ZOL* = Conjugate of the optimum load
ZOL* = impedance into which the device
ZOL* = output operates at a given output
ZOL* = power, voltage, and frequency .
P , OUTPUT POWER (WATTS pk)
out
Pin, INPUT POWER (WATTS pk)
50 f = 960 MHz 1090 MHz
VCC = 50 V
tP = 10
µ
s
D = 1%
0
40
1
1215 MHz
2345
30
20
10
0
P , OUTPUT POWER (WATTS pk)
out
50
40
30
20
10
0960 f, FREQUENCY (MHz)
1090 1215
Pin = 3.5 W pk
2 W pk
2.5 W pk
1.5 W pk
1 W pk
VCC = 50 V
tP = 10
µ
s
D = 1%
P , OUTPUT POWER (WATTS pk)
out
50
40
30
20
10
0
VCC, SUPPLY VOLTAGE (VOLTS)
0 1020304050
P
in = 3.5 W pk
2.5 W pk
2 W pk
1.5 W pk
1 W pk
tP = 10
µ
s
D = 1%
f = 1090 MHz
GPB, POWER GAIN (dB)
960
15
f, FREQUENCY (MHz) 1215
14
12
11
10
13
1090
Pout = 35 W pk
VCC = 50 V
tP = 10
µ
s
D = 1%
Zin
ZOL*
f = 960 MHz 1090 1215
f = 960 MHz
1090
1215
3
MRF1035MBMOTOROLA RF DEVICE DATA
MRF1035MB
4 MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 332A–03
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. BASE
2. EMITTER
3. BASE
4. COLLECTOR
K
F
D
SEATING
1
4
3
2
PLANE
HAJ
C
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.270 0.290 6.86 7.36
C0.115 0.135 2.93 3.42
D0.195 0.205 4.96 5.20
F0.095 0.105 2.42 2.66
H0.050 0.070 1.27 1.77
J0.003 0.007 0.08 0.17
K0.600 ––– 15.24 –––
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
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Opportunity/Af firmative Action Employer.
Mfax is a trademark of Motorola, Inc.
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MRF1035MB/D
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