ess ius egayce CYC164A CYC166A S27 CYPRESS Features + High speed 20ns * Output enable (OE) feature (7C166A) + CMOS for optimum speed/power + Low active power 550 mW Low standby power 220 mW + TTL-compatible inputs and outputs + Automatic power-down when deselected Functional Description The GY7C164A and CY7C166A are high-performance GMOS static RAMs organized as 16,384 by 4 bits. Easy memory ex- pansion is provided by an active LOW chip enable (CE) and 16K x 4 Static RAM three-state drivers. The CY7C166A has an active low output enable (OE) feature. Both devices have an automatic pow- er-down feature, reducing the power consumption by 60% when deselected. Writing to the device is accomplished when the chip enable (CE) and write enable (WE) inputs are both LOW (and the output enable (OE) is LOW for the 7G166A). Data on the four input/output pins (1/00 through I/O3) is written into the memory location specified on the address pins (AO through A13). Reading the device is accomplished by taking chip enable (CE) LOW (and OE LOW for 7C166A), while write enable (WE) remains HIGH. Under these conditions the contents of the memory location specified on the address pins will appear on the four data I/O pins. The /O pins stay in high-impedance state when chip enable (CE) is HIGH, or output enable (GE) is HIGH for 7C 166A. A die coat is used to insure alpha immunity. Logic Block Diagram Pin Configurations DIP DIP Top View Top View 4sQ1 Ags Q2 4703 As 4 Ag is Avo De 701644170 At O7 AeOs Ava Do NPUT BU ZEC 10 enpuU 11 Ay mf a VQ Pe a CI64A-3 Bats = Op Ay tt 256 x 64 x4 Wi Ag a ARRAY 7) AHS 2 VO, an 2 17Qy COLUMN DECODER CE CN bs WE Cleat (OE) (7C166A ONLY) C164A-1 Selection Guidel! 7C164A-15 7C164A-20 7C164A-25 7C164A-35 7C166A-15 7C164A4-20 7C166A-25 7C166A-35 Maximum Access Time (ns) 15 20 25 35 Maximum Operating Current (mA}| Military 166 100 100 100 Maximum Standby Current (mA) Military 40/20 40/20 40/20 30/20 Shaded area contains advanced information. Note: 1. For commercial specifications, see the CY7C164/CY7C166 datasheet. Cypress Semiconductor Corporation + 3901 North First Street + SanJose + CA 95134 + 408-943-2600 January 1989 - Revised December 1994CYC164A CYC166A Maximum Ratings (Above which the useful life may be impaired. For user guide- Static Discharge Voltage oo... eeeeereteeeeees >2001V lines, not tested.) (per MIL-STD-883, Method 3015} Storage Temperature oo... ee 65C to +150C Lateh-up Current ..00..0.. eee >200 mA Ambient Temperature with : Power Applied 00.0.0... ccccecceccteteteeeeees -55C to +125C Operating Range Supply Voltage to Ground Potential ............... -0.5 to +7.0V Ambient DC Voltage Applied to Outputs Range Temperature Vee in High Z State cc csessteess teense -0.5V to +7.0V Military!) -55C to +125C BV + 10% DC Input Voltage ee 0.5Vt0+7.0V Notes: Mini Itage is equal to 3.0V for pulse durations less th . Output Current into Outputs (Low)... ee 20 mA 3 Ta is the vingtant on case temperature S@ durations fess than 20 ns Electrical Characteristics Over the Cperating Rangel! 7C1644-15 7C164A-20 7C166A-15 7C166A4-20 Parameter Description Test Conditions Min. | Max. | Min. | Max. | Unit Vou Output HIGH Voltage Veo = Min., loo =-4.0 mA 2.4 24 V VoL Output LOW Voltage Voc = Min., lot =8.0mA 0.4 0.4 Vv Vin Input HIGH Voltage 2.2 Voc 2.2 Voc Vv Vi Input LOW Voltagell 3.0] 08 | 30] 08 V lix Input Load Current GND Viy-0.3V Vin > Vee -0.3V or Vins 0.3V Shaded area contains advanced information.CYC164A CYC166A Electrical Characteristics Over the Operating Range!!(continued) 7C164A-25 7C164A-35 7C166A-25 7C166A-35 Parameter Description Test Conditions Min. | Max. | Min. Max. Unit Vou Output HIGH Voltage Vee = Min., loy =-4.0 mA 2.4 2.4 Vv VoL Output LOW Voltage Voc = Min., lg. =8.0 mA 0.4 0.4 V Vin Input HIGH Voltage 2.2 Voc 2.2 Voc V Vi Input LOW Voltage! -3.0 ] 08 | -3.0 0.8 V ix Input Load Current GND Viy 0.3V Vin > Voc 0.3V or Vins 0.3V Capacitance! Parameter Description Test Conditions Max. Unit Cin Input Capacitance Ta = 25C, f = 1 MHz, 10 pF Cout Output Capacitance Voc =5.0 10 pF Notes: 4. See the last page of this specification for Group A subgroup testing information. 5. Not more than 1 output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds. 6. A pull-up resistor to Ve, on the CE input is required to keep the device deselected during V, 7. Tested initially and after any design or process changes that may affect these parameters. Shaded area contains advanced information. AC Test Loads and Waveforms Ri 4810 BV o___aa De Sraii eT 30 pF I INCLUBING R2 2550. JGAND = = SCOPE (a) Equivalent to: Ri 4810 BV a<$@_<_a rs 5 pF $ Re | 7 2550 INCLUDING L JIGAND = = SCOPE (b) C1ib4A4 THEVENIN EQUIVALENT 1670 OUTPUT o____aaa $$$ 1.73 cc power-up, otherwise lp will exceed values given. ALL INPUT PULSES g0% 10% <5ns C1B4A-5CYC164A CYC166A Switching Characteristics Over the Operating Rangel* 7C164A-15 7C164A-20 7C164A-25 7C164A-35 7C166A-15 7C166A-20 7C166A-25 7C166A-35 Parameter Description Min. | Max. | Min. | Max. | Min. | Max. | Min. | Max. Unit READ CYCLE tac Read Cycle Time 15 20 25 35 ns taa Address to Data Valid 15 20 25 35 ns TOHA Output Hold from 3 3 3 3 ns Address Change tace CE LOW to Data Valid t5 20 25 35 ns tpoe OE LOW to Data Valid 7 10 12 15 ns (7C 166A) iLZ0E OE LOW to Low Z 0 3 3 3 ns (7C 166A) tyz0e OE HIGH to High Z 8 8 10 12 ns (7C166A) tLZcE CE LOW to Low Z/*l 3 5 5 5 ns tuzce CE HIGH to a 8 10 15 ns High z!9: 10] tpu CE LOW to Power-Up 0 0 0 0 ns tpo CE HIGH to 15 20 20 20 ns Power-Down WRITE CYCLE!!! two Write Cycle Time 15 20 20 25 ns tsce CE LOW to Write End 10 15 20 25 ns taw Address Set-Up to 1d 15 20 25 ns Write End tua Address Hald from 0 0 0 0 ns Write End isa Address Set-Up to 0 0 0 0 ns Write Start tpwe WE Pulse Width 10 15 15 20 ns tsp Data Set-Up to 7 10 10 15 ns Write End typ Data Hold from ) 0 0 0 ns Write End tLawe WE HIGH to Low 21 3 5 5 5 ns tHzwe WE LOW to High Z/9:19] 7 7 7 10 ns Shaded area contains advanced information. Notes: 8. Test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5V, input pulse levels of Oto 3.0V, and output loading of the specified lou/lgy and 30-pF load capacitance. 9. At any given temperature and voltage condition, tuzgp is less than t, z for any given device. These parameters are guaranteed by design and not 100% tested. 10. tugce and tuzwe are specified with C_ = 5 pF as in part (b) in AC Test Loacs. Transition is measured +500 mV from steady-state voltage. 11. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.CYC164A CYC166A Switching Waveforms Read Cycle No. 1['2. 13] a tac | ADDRESS x at taA | ph foun DATA OUT PREVIOUS DAA VALID % Kx DATA VALID CI64A-6 Read Cycle No. 2!'2. 141 CE OE 70166 tpoE tL70E HIGH IMPEDANCE DATA OUT HIGH tL70E DATA VALID IMPEDANCE ae Icc ue om = a CIB4A-7 WriteCycle Noi (WE Controlled)!"!: '5] twe ADDRESS 4 Isce ES ISA MULL taw at iHa* tsa | tpwe > << * NE 7 WE Xs A _ tsp wee tp DATA IN DATAn VALID re tHAWE > re | We > HIGH IMPEDANCE DATA VO DATA UNDEFINED > SX C164A-8CYC164A CYC166A Switching Waveforms (continued) Notes: 12. WE is HIGH for read cycle. 13. Device is continuously selected, CE =V)_.{7C166A OE = V|, also). 14. Address valid prior to or coincident with CE transition LOW. 15. 7C166A only: Data I/O will be high impedance if OE = V/,,. Write Cycle No. 2 (CE Controlled)!" 15 16 aA two ADDRESS x x tsceE x se taw e~ na ty s tpwe TS 7 TOO ULE tsp 1* tH BATA IN BATAn VALID HIGH IMPEDANCE DATA I/O C164A-9 Note: 16. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state.CYC164A CYC166A Typical DC and AC Characteristics NORMALIZED SUPPLY CURRENT vs. SUPPLY VOLTAGE NORMALIZED SUPPLY CURRENT vs. AMBIENT TEMPERATURE OUTPUT SOURCE CURRENT vs. OUTPUT VOLTAGE h, 0.2 Isp 021 Isp o 20 \ 0.0 0.0 5 0 4. . . . 0 55 25 125 0.0 1.0 2.0 3.0 4.0 SUPPLY VOLTAGE (V) AMBIENT TEMPERATURE (C) OUTPUT VOLTAGE (V) NORMALIZED ACCESS TIME NORMALIZED ACCESS TIME OUTPUT SINK CURRENT vs. SUPPLY VOLTAGE vs. AMBIENT TEMPERATURE ~ vs. OUTPUT VOLTAGE 1.4 1.6 <= 140 E 1 B 120 a '4 i 100 O12 a ia NI W 12 4 3 80 Zz 11% 2 a g z ee] Ta =25C) 2 1.0 n 60 Q 10 9 Veo =5.0V 5 40 08b> FE 0.9 > 20 o 0.8 0.6 0 4.0 45 5.0 55 6.0 55 25 125 0.0 0 2.0 3.0 0 SUPPLY VOLTAGE (V) AMBIENT TEMPERATURE (C) QUTPUT VOLTAGE [V) TYPICAL POWER-ON CURRENT TYPICAL ACCESS TIME CHANGE vs. SUPPLY VOLTAGE vs. OUTPUT LOADING NORMALIZED Icc vs.CYCLE TIME 3.0 30.0 1.25 T Voc =5.0V 9 25 _. 25.0 a 0 Ta =25C = o / 2 Vin =0.5V tT 2.0 ~~ 20.0 G 1.00 N 2 J N Z 15 = 15.0 z Ss ne ~ S 5 i L g z 10 / 10.0 V4 Vec=4.5v 7 | 2 &? Ly 05 = 5.0 f Ta =25C __ | 0.0 eee | 0.0 Y 0.50 00 10 20 30 40 5.9 0 6200 400 600 800 1000 10 20 30 40 SUPPLY VOLTAGE (V) CAPACITANCE (pF) CYCLE FREQUENCY (MHz) CY7C164A Truth Table Ss CY7C166A Truth Table CE | WE | Inputs/Outputs Mode eo H X |High Z Deselect/Power-Down CE | WE | OE Inputs/Outputs Mode L H_ |Data Out Read H xX X |High Z Deselect/Power-Down L L Ipata In Write L H L |Data Out ReadCYC164A CYC166A CY7C166A Truth Table ; | CE | WE | OF | Inputs/Outputs Mode Address Designators C [| x [Pata in Write Name | Function | Pin Number | Pin Number L H H |High 7 Deselect AS X3 j 1 AG x4 2 2 A7 X5 3 3 A8 x6 4 4 Ag X7 5 5 A10 Y5 6 6 Alt 4 7 7 Al2 YO 8 8 A13 Y1 9 9 AO Y2 17 19 Al 3 18 20 A2 x0 19 2 A3 x1 20 22 A4 x2 21 23Ordering Information Speed Package Package Operating ths) Ordering Code Name Type ange 15 CY7C164A4-15DMB Did 22-Lead (300-Mil} CerDIP Military 20 CY7C164A-20DMB D10 22-Lead (300-Mil} CerDIP Military 25 CY7C164A-25DMB D10 22-Lead (300-Mil} CerDIP Military 35 CY7C164A-35DMB D10 22-Lead (300-Mil} CerDIP Military Speed Package Package Operating ns) Ordering Code Name Type ange 15 GY?7C166A-15DMB B14 24-Lead (300-Mil} CerDiP Military 20 C7C166A-20DMB D14 24-Lead (300-Mil} CerDIP Military 25 CY7C166A-25DMB D14 24-Lead (300-Mil} CerDIP Military 35 C7C166A-35DMB D14 24-Lead (300-Mil} GerDIP Military Shaded area contains advanced information. MILITARY SPECIFICATIONS Group A Subgroup Dc Characteristics Testing Switching Characteristics Parameter Subgroups Parameter | Subgroups Vou 1,2,3 READ CYCLE Vo 1,2,3 tac 7, 8,9, 10, 11 VW 12.8 ta 7,8,9,10, 11 Vit Max 12.8 toHA 7,8,9, 10, 11 ln 1.2.3 tace 7, 8,9, 10, 11 loz 128 toog!!7 7,8,9, 10, 11 los 1,2,3 poe a lec a WRITE CYCLE = 12.3 twe 7, 8,9, 10, 11 Isat 1.2.3 tsce 7, 8,9, 10, 11 taw 7, 8,9, 10, 11 Document #: 38-00113-D tHA 7, 8,9, 10, 11 tsa 7, 8,9, 10, 11 tpwe 7, 8,9, 10, 11 tsp 7, 8,9, 10, 11 tu 7, 8,9, 10, 11 Note: 17. 7C166A only. CYC164A CYC166A Cypress Semiconductor Corporation, 1994. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility tor the use ofany circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical componenis in life-support systems where a maliunction or failure may reasonably be expecied to result in significant injury to the user. The inclusion of Cypress Semiconductor products in life-support systems application implies that ine manutacturer assumes all risk of Such Use and in doing so indemnifies Cypress Semiconductor against all charges.CYC164A CYC166A Package Diagrams 24-Lead (300-Mil) CerDIP D14 22-Lead (300-Mil) CerDIP D10 MIL-STD-1835 D-9 Config.A 4" IN INCHES PIN L, " DIMENSIONS IN INCHES IN 1, DIMEN 10h ar MIR, " = TOMS as Hae noon sooonn i MI, 7 MAX, ) J 245 Lalo ! a Io ooo i ) O65 . | Le: ae ns MI. PALE PLANE moO ooo 2 [fii 250 | [483 Oh Bae PLANE 3c 1230 - 155 za 4 mu Lae UE 4 maine yp - ep =m Troi EN 8 || vn | | Maa on these | ge Dell SEATIMG FLAME Wad OS SEATING PLANE 10