PHOTODIODE Si photodiode S1336 series UV to near IR for precision photometry Features Applications High sensitivity Low capacitance High reliability Analytical instruments Optical measurement equipment General ratings / Absolute maximum ratings Type No. Dimensional outline/ Window material * /Q /K /Q /K /Q /K /Q /K S1336-18BQ S1336-18BK S1336-5BQ S1336-5BK S1336-44BQ S1336-44BK S1336-8BQ S1336-8BK Package Active area size Effective active area (mm) (mm) (mm2) TO-18 1.1 x 1.1 1.2 2.4 x 2.4 5.7 3.6 x 3.6 13 5.8 x 5.8 33 TO-5 TO-8 Absolute maximum rating Operating Storage Reverse voltage temperature temperature V4 Max. Topr Tstg (V) (C) (C) -20 to +60 -55 to +80 -40 to +100 -55 to +125 -20 to +60 -55 to +80 -40 to +100 -55 to +125 5 -20 to +60 -55 to +80 -40 to +100 -55 to +125 -20 to +60 -55 to +80 -40 to +100 -55 to +125 Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted) Short circuit Terminal Temp. Dark Rise time capacicurrent current coeffitr Isc tance cient I, 100 lx VR=0 V Ct VR=10 mV of I, Type No. RL=1 k9 VR=0 V He-Ne Max. T +1, 200 nm Min. Typ. f=10 kHz l laser lp 633 Min. Typ. (nm) (nm) nm (A) (A) (pA) (times/C) (s) (pF) S1336-18BQ 190 to 1100 0.10 0.12 1 1.2 20 0.1 20 S1336-18BK 320 to 1100 S1336-5BQ 190 to 1100 0.10 0.12 4 5 30 0.2 65 S1336-5BK 320 to 1100 960 0.5 0.33 1.15 S1336-44BQ 190 to 1100 0.10 0.12 8 10 50 0.5 150 S1336-44BK 320 to 1100 S1336-8BQ 190 to 1100 0.10 0.12 22 28 100 1 380 S1336-8BK 320 to 1100 * Window material, K: borosilicate glass, Q: quartz glass Spectral response range Peak sensitivity wavelength lp Photo sensitivity S (A/W) Shunt resistance Rsh VR=10 mV NEP Min. Typ. (GW) (GW) (W/Hz1/2) 0.5 2 5.7 x 10-15 0.3 1 8.1 x 10-15 0.2 0.6 1.0 x 10-14 0.1 0.4 1.3 x 10-14 1 Si photodiode Spectral response Photo sensitivity temperature characteristic (Typ. Ta =25 C) 0.6 0.5 0.4 0.3 S1336-BQ 0.2 0.1 S1336-BK 400 600 800 (Typ. ) +1.5 TEMPERATURE COEFFICIENT (%/C) PHOTO SENSITIVITY (A/W) 0.7 190 S1336 series +1.0 +0.5 0 -0.5 190 1000 WAVELENGTH (nm) 400 600 800 1000 WAVELENGTH (nm) KSPDB0098EA Rise time vs. load resistance KSPDB0053EB Dark current vs. reverse voltage (Typ. Ta=25 C, VR=0 V) 1 ms (Typ. Ta=25 C) 10 nA S1336-8BQ/BK 10 s 1 nA S1336-8BQ/BK DARK CURRENT RISE TIME 100 s S1336-44BQ/BK 1 s S1336-18BQ/BK 100 pA 10 pA S1336-18BQ/BK S1336-44BQ/BK 100 ns 1 pA S1336-5BQ/BK S1336-5BQ/BK 10 ns 102 103 104 105 LOAD RESISTANCE () 0.1 1 10 REVERSE VOLTAGE (V) KSPDB0099EA 2 100 fA 0.01 KSPDB0100EA Si photodiode S1336 series Shunt resistance vs. ambient temperature (Typ. VR=10 mV) 1 T S1336-5BQ/BK SHUNT RESISTANCE 100 G S1336-44BQ/BK 10 G S1336-18BQ/BK 1 G 100 M 10 M S1336-8BQ/BK 1 M 100 k 10 k -20 0 20 40 60 80 AMBIENT TEMPERATURE (C) KSPDB0101EA Dimensional outlines (unit: mm) 5.4 0.2 3.6 0.2 8.1 0.1 PHOTOSENSITIVE SURFACE 20 0.45 LEAD 14 0.45 LEAD 9.1 0.2 2.8 4.7 0.1 WINDOW 5.9 0.1 2.3 WINDOW 3.0 0.2 S1336-5BQ/K, S1336-44BQ/K 4.1 0.2 S1336-18BQ/-18BK 5.08 0.2 2.54 0.2 CONNECTED TO CASE CONNECTED TO CASE KSPDA0102EB The K type borosilicate glass window may extend a maximum of 0.2 mm above the upper surface of the cap. KSPDA0103EA 3 Si photodiode S1336 series S1336-8BQ/-8BK 13.9 0.2 12.35 0.1 5.0 0.2 WINDOW 10.5 0.1 15 1.8 PHOTOSENSITIVE SURFACE 0.45 LEAD 7.5 0.2 MARK ( 1.4) CONNECTED TO CASE The K type borosilicate glass window may extend a maximum of 0.2 mm above the upper surface of the cap. KSPDA0104EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2002 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 4 Cat. No. KSPD1022E03 Oct. 2002 DN