Features
● High sensitivity
● Low capacitance
● High reliability
Applications
● Analytical instruments
● Optical measurement equipment
PHOTODIODE
Si photodiode
UV to near IR for precision photometry
S1336 series
■ General ratings / Absolute maximum ratings
Absolute maximum rating
Package Active
area size
Effective
active area Reverse voltage
V4 Max.
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline/
Window
material * (mm) (mm) (mm2) (V) (°C) (°C)
S1336-18BQ ➀/Q -20 to +60 -55 to +80
S1336-18BK ➀/K TO-18 1.1 × 1.1 1.2 -40 to +100 -55 to +125
S1336-5BQ ➁/Q -20 to +60 -55 to +80
S1336-5BK ➁/K 2.4 × 2.4 5.7 -40 to +100 -55 to +125
S1336-44BQ ➁/Q -20 to +60 -55 to +80
S1336-44BK ➁/K
TO-5
3.6 × 3.6 13 -40 to +100 -55 to +125
S1336-8BQ ➂/Q -20 to +60 -55 to +80
S1336-8BK ➂/K TO-8 5.8 × 5.8 33
5
-40 to +100 -55 to +125
■ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Photo sensitivity
S (A/W)
Short circuit
current
Isc
100 lx
Spectral
response
range
l
Peak
sensi-
tivity
wave-
length
lp200 nm He-Ne
laser Min. Typ.
Dark
current
I,
VR=10 mV
Max.
Temp.
coeffi-
cient
of I,
T+1,
Rise time
tr
VR=0 V
RL=1 k9
Terminal
capaci-
tance
Ct
VR=0 V
f=10 kHz
Shunt
resistance
Rsh
VR=10 mV
NEP
Type No.
(nm) (nm)
lp
Min. Typ. 633
nm (µA) (µA) (pA) (times/°C) (µs) (pF)
Min.
(GW)
Typ.
(GW)(W/Hz1/2)
S1336-18BQ 190 to 1100 0.10 0.12
S1336-18BK 320 to 1100 - - 1 1.2 20 0.1 20 0.5 2 5.7 × 10-15
S1336-5BQ 190 to 1100 0.10 0.12
S1336-5BK 320 to 1100 - - 4 5 30 0.2 65 0.3 1 8.1 × 10-15
S1336-44BQ 190 to 1100 0.10 0.12
S1336-44BK 320 to 1100 - - 8 10 50 0.5 150 0.2 0.6 1.0 × 10-14
S1336-8BQ 190 to 1100 0.10 0.12
S1336-8BK 320 to 1100
960 0.5
--
0.33
22 28 100
1.15
1 380 0.1 0.4 1.3 × 10-14
* Window material, K: borosilicate glass, Q: quartz glass
1
Si photodiode
S1336 series
DARK CURRENT
REVERSE VOLTAGE (V)
0.01
(Typ. Ta=25 ˚C)
100 fA 0.1 1 10
1 pA
10 pA
100 pA
1 nA
10 nA
S1336-8BQ/BK
S1336-18BQ/BK
S1336-5BQ/BK
S1336-44BQ/BK
0.1
190 400 600 800 1000
0.3
0.2
(Typ. Ta =25 ˚C)
0.4
0.5
0.6
0.7
S1336-BK
S1336-BQ
WAVELENGTH (nm)
PHOTO SENSITIVITY (A/W)
■ Spectral response ■ Photo sensitivity temperature characteristic
KSPDB0098EA
TEMPERATURE COEFFICIENT (%/˚C)
190 400 600 800 1000
WAVELENGTH (nm)
0
(Typ. )
+0.5
+1.0
-0.5
+1.5
KSPDB0053EB
10
2
(Typ. Ta=25 ˚C, V
R
=0 V)
10 ns 10
3
10
4
10
5
100 ns
1 µs
10 µs
100 µs
1 ms
S1336-18BQ/BK
S1336-5BQ/BK
S1336-8BQ/BK
S1336-44BQ/BK
RISE TIME
LOAD RESISTANCE (
Ω
)
■ Rise time vs. load resistance ■ Dark current vs. reverse voltage
KSPDB0099EA KSPDB0100EA
2
Si photodiode
S1336 series
SHUNT RESISTANCE
AMBIENT TEMPERATURE (˚C)
-20
(Typ. V
R
=10 mV)
10 kΩ020406080
100 kΩ
1 MΩ
10 MΩ
100 M
Ω
1 GΩ
10 GΩ
100 GΩ
1 TΩ
S1336-44BQ/BK
S1336-5BQ/BK
S1336-18BQ/BK
S1336-8BQ/BK
■ Shunt resistance vs. ambient temperature
KSPDB0101EA
➀ S1336-18BQ/-18BK ➁ S1336-5BQ/K, S1336-44BQ/K
KSPDA0102EB
20 4.1 ± 0.2
2.8
8.1 ± 0.1
9.1 ± 0.2
5.08 ± 0.2
CONNECTED
TO CASE
The K type borosilicate glass
window may extend a maximum
of 0.2 mm above the upper surface
of the cap.
PHOTOSENSITIVE
SURFACE
WINDOW
5.9 ± 0.1
0.45
LEAD
KSPDA0103EA
14
2.3
3.6 ± 0.2
4.7 ± 0.1
5.4 ± 0.2
2.54 ± 0.2
CONNECTED TO CASE
WINDOW
3.0 ± 0.2
0.45
LEAD
■ ■
■ ■
■ Dimensional outlines (unit: mm)
3
Si photodiode
S1336 series
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K.
15 5.0 ± 0.2
1.8
12.35 ± 0.1
13.9 ± 0.2
7.5 ± 0.2
MARK ( 1.4)
CONNECTED
TO CASE
WINDOW
10.5 ± 0.1
The K type borosilicate glass
window may extend a maximum
of 0.2 mm above the upper surface
of the cap.
PHOTOSENSITIVE
SURFACE
0.45
LEAD
KSPDA0104EA
➂ S1336-8BQ/-8BK
Cat. No. KSPD1022E03
Oct. 2002 DN
4
