SEMICONDUCTOR re TECHNICAL DATA 2N2605 PNP Silicon Small-Signal Transistor . designed for general-purpose an plifier applications. CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, NY. 14775 MAXIMUM RATINGS Rating Symbol Value Unit Coltector-Emitter Voltage VCEO 60 Vde Collector-Base Voltage VcBO 70 Vde Emitter-Base Voltage VEBO 6.0 Vde Collector Currant Gontinuous Ic 30 mAdc Device Dissipation Pr @Ta=25C 400 mW Darate above 25C 228 mirc CASE 26-03, STYLE 1 Operating Junction and Storage Ty. Tstg ~65 to 200 7c TO-206AB (TO-46) Temperature Range ELECTRICAL CHARACTERISTICS (T, = 25C unless otherwise noted.) Characteriatic Symbo! Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage! !) ViBR)ICEO 60 - Vde (Ic = 10 mAde, Ig = 0) Collector-Base Breakdown Voltage V(BR)CBO 70 ae Vode (Ig = 10 pAdc, fg = 0) Emitter-Base Breakdown Voltage ViBRIEBO 6.0 _ Vde (Ig = 10 pAde. Ic = 0) Collector Cuto# Current 'cBo wade (Vg 50 Vde. Ig = 0) - 0.01 (Vog = 50 Vde. Ig = 0. Ta = 180C) 7 5.0 Collector Cutoff Current IcES _ 0.01 pAde (VE = 50 Vde. IE = 0) Emitter Cutoff Current lEBO - 0.002 pAde (VeB = 5.0 Vde, Ic = 0) (continued 4, Pulsed. Pulse Width 250 to 360 us Duly Cycle 1 6 to 2 2%2N2605JAN SERIES ELECTRICAL CHARACTERISTICS continued (Ta = 25C untess otherwise noted.) i Characteristic | , ON CHARACTERISTICS Symbol Min [ Max Unit { OC Current Gain(t) (Ic = 10 pAde, Vg = 5.0 Vde) tig = 500 pAdc, Vcg = 5.0 Vdc) tig = 10 mAdc, VoE = 5.0 Vdc) {Ig = 10 pAdc, Voge = 5.0 Vde. Ta = -65C) hee 100 150 100 30 300 450 400 Collector-Emitter Saturation Voltage (Ic = 10 mAdc, Ip = 0.5 mAdc) VCE (sat) 0.3 Vde Base-Emitter Saturation Voltage (ie = 10 mAde. Ip = 0.5 mAdc) VBE(sat) a7 0.9 Vde SMALL-SIGNAL CHARACTERISTICS Collector Base Capacitance (Veg = 5.0 Vde, Ie = 0. 1 = 0.1 to 1.0 MHz) Cobo 6.0 pF Small-Signai Current Gain {Ig = 1.0 mAdc. Veg = 5.0 Vdc, f = 1.0 kHz) Me 450 Smail-Signai Current Transfer Ratio. Magnitude (ig = 0.5 mAdc. VCE = 5.0 Vdc. f = 30 MHz} tel 8.0 input impedance (Ig = 1.0 mAde, VcE = 5.0 Vde, f= 1.0 kHz) hie 20 kohms Voltage Feedoack Ratio (Ic = 1.0 mAdc, Vog = 5.0 Vde, f= 1.0 kHz) tre X 10-4 Output Admitiance (Ig = 1.0 mAdc, Veg = 5.0 Ve. f = 1 0 kHz) hoe 60 pmhos. Noise Figure (Rg = 10 kohm) (Ic = 10 wAde. Vg = 50 Vde. f= 100 Hz) (f = 4.0 kHz} (f = 10 kHz} NF 5.0 3.0 30 ASSURANCE TESTING (Pre/Post Burn-in) Burn-in Conditions: Ta = 30 +5C, Vcg = 25 +5 Vde Py = 400 mw Characteristics Tested Symbol Initial and End Point Limits Min Unit Collector Cutoff Current IcBO (Vg = 50 Vde) 10 nAde OC Current Gain!) hrE tl = 10 jAde. Voge = 5.0 Vdc) 100 300 Deita from Pre-Burn-in Measured Values Delta Collector Cutot Current sIcBo =100 orti0 whichever is greater % of Initial Value nAdc Delta DC Current Gain!") AEE +15 % of intial Value it Pused Purse With 25C t 380.15 Duty Cyre t0 2 9F