2. 70
3. 70
0.551.05
1.6
B0530W SCHOTTKY BARRIER DIODE
FEATURES
Power dissipation
PD: 410 mW (Tamb=25℃)
Collector current
IF: 5.5 A
Collector-base voltage
VR: 30 V
Operating and storage junction temperature range
TJ, Tstg: -5 5 ℃ to +150℃
MA RKING: S E
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Reverse breakdown voltage V(BR) I
R= 200 30 V
Reverse voltage leakage cur r ent IR VR=15V
VR=30V 20
130 µA
Forward voltage VF IF=0.1A
IF=0.5A
0.375
0.43 V
Diode capacitance CD V
R=0V, f=1MHz 170 pF
Unit : mm
SOD-123
