HAL300 Differential Hall Effect Sensor IC alam MICRONAS | INTERMETALL & MICRONAS 5281445.108 INTERMETALLHAL300 Ditferential Hall Effect Sensor IC in CMOS technology Introduction The HAL300 is a differential Hall switch produced in CMOS technology. The sensor includes 2 temperature- compensated Hall plates (2.05 mm apart) with active off- set compensation, a differential amplitier with a Schmitt trigger, and an open-drain output transistor (see Fig. 2). The HAL300 is a differential sensor which responds to spatial ditferences of the magnetic field. The Hall volt- ages at the two Hall plates, S$; and Ss, are amplitied with a differential amplifier. The ditferential signal is compared with the actual switching level of the internal Schmitt trigger. Accordingly, the output transistor is switched on or off. The sensor has a bipolar switching behavior and re- quires positive and negative values of AB = Bs; Bee for correct operation. The HAL 300 is an ideal sensor for applications with a ro- tating multi-pole-ring in frent of the branded side of the package (see Fig. 4 and Fig. 5), such as ignition timing, anti-lock brake systems, and revolution counting. For applications in which a magnet is mounted on the back side of the package (back-biased applications), the HAL320 is recommended. The active offset compensation leads to constant mag- netic characteristics over supply voltage and tempera- ture. The sensor is designed for industrial and automotive ap- plications and operates with supply voltages from 4.5 V to 24 V in the ambient temperature range from 40 C up to 150 C. The HAL 300 is available in a SMD-package (SOT-89A) and in a leaded version (TO-92UA). Features: distance between Hall plates: 2.05 mm operates from 4.5 V to 24 V supply voltage switching offset compensation at 62 kHz overvoltage protection reverse-voltage protection at Vpp-pin short-circuit protected open-drain output by thermal shutdown operates with magnetic fields from DC to 10 kHz output turns low with magnetic south pole on branded side of package and with a higher magnetic flux densi- ty in sensitive area $1 as in S2 on-chip temperature compensation circuitry mini- mizes shifts of the magnetic parameters over temper- ature and supply voltage range the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of hystere- sis EMC corresponding to DIN 40839 Marking Gode HAL 30080, HAL 300UA 300A 300E 300C Operating Junction Temperature Range (T,) A: Ty = 40 C to +170 C E: Ty = 40 C to +100 C C: Ty =0C to +100 C The relationship between ambient temperature (Ta) and junction temperature (T) is explained on page 11. Hall Sensor Package Codes HAL XXXPA-T * Ss Temperature Range: A, E, or C Package: SO for SOT-89A, UA for TO-92UA Type: 300 Example: HAL300UA-E Type: 300 Package: TO-92UA Temperature Range: Ty = 40 C to +100 C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer te the brechure: Ordering Codes for Hall Sensors. MICRONAS INTERMETALLHAL300 Solderability Package SOT-89A: according to IEC68-2-58 Package TO-92UA: according to IEC68-2-20 2 GND Fig. 1: Pin configuration Functional Description This Hall effect sensor is a monolithic integrated circuit with 2 Hall plates 2.05 mm apart that switches in response to differential magnetic fields. If magnetic fields with flux lines at right angles to the sensitive areas are applied to the sensor, the biased Hall plates force Hall voltages proportional to these fields. The ditference of the Hall voltages is compared with the actual thresh- old level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the ditferential magnetic field exceeds the threshold levels, the open drain output switches to the appropriate state. The built- in hysteresis eliminates oscillation and provides switching behavior of the output without oscillation. Magnetic offset caused by mechanical stress at the Hall plates is compensated for by using the switching offset compensation technique: An internal oscillator pro- vides a two phase clock (see Fig. 3). The ditference of the Hall voltages is sampled at the end of the first phase. At the end of the second phase, both sampled ditferen- tial Hall voltages are averaged and compared with the actual switching point. Subsequently, the open drain output switches to the appropriate state. The amount of time that elapses from crossing the magnetic switch lev- el to the actual switching of the output can vary between zero and Tose. Shunt protection devices clamp voltage peaks at the Output-Pin and Vpp-Pin together with external series resistors. Reverse currentis limited at the Vpp-Pin by an internal series resistor up to -15 V. No external reverse protection diode is needed at the Vpp-Pin for values ranging from 0 V to-15 V. HAL300 Vop Reverse Temperature Hyst : Short Circuit & o Vollage & LET Dependent Cae Overvoltage 1 Overvoliage Bias Protection Protection Hall Plaie $1 _ Comparator OUT Switch = > i Output 0 3 Hall Plaie S82 L | Clock GND I Fig. 2: HAL300 block diagram Tose Tfosc = 16 ws Fig. 3: Timing diagram MICRONAS INTERMETALLHAL300 Outline Dimensions bg 4.5540.4 ____g! sensitive area Sy jt 1.7 tm a ak sensitive area Sp top view branded side fa fa + 0.06+0.04 SPGS7001-8-B3M4E Fig. 4: Plastic Small Outline Transistor Package (SOT-89A) Weight approximately 0.04 g Dimensions in mm Dimensions of Sensitive Areas 0.08 mm x 0.17 mm Positions of Sensitive Areas Xy = 1.025 mm +0.2 mm Xe = 1.025 mm+0.2 mm Xe X4 = 2.05 mm +0.01 mm y = 0.98 mm + 0.2 mm y=1.0 mm +0.2 mm x1 and Xz are referenced to the center of the package 1.540.05 Pa 2.03 oo a) la ifi- fy sensitive area S, sensitive area Sp xy) Xe 048 ia wo o 0.55 + 1}e[2 | | rt 0.36 | co 1.27) 1.27 branded side emis 45 08 SPGS7002-8-BAE Fig. 5: Plastic Transistor Single Outline Package (TO-92UA) Weight approximately 0.12 g Dimensions in mm MICRONAS INTERMETALLHAL300 Absolute Maximum Ratings Parameter Min | Max | Unit Supply Voltage 1 -15 Test Voltage for Supply 1 -242) - Vv Reverse Supply Current 1 - 501) mA Supply Current through 1 -2009) 200) mA Protection Device Vo Output Voltage 3 0.3 281) V lo Continuous Output On Current 3 - 30 mA lomax Peak Output On Current 3 - 2503) mA loz Output Current through 3 -2003) 200) mA Protection Device Ts Storage Temperature Range -65 150 C Ty Junction Temperature Range 40 150 a 40 1704) 1) as long as Tymax is not exceeded 2) with a 220 series resistance at pin 1 corresponding to test circuit 1 3) t<2 ms 4) t<1000h Stresses beyond those listed in the Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the Recommended Operating Conditions/Characteristics of this specification is not implied. Exposure to absolute maxi- mum ratings conditions tor extended periods may affect device reliability. Recommended Operating Conditions Supply Voltage lo Continuous Output On Current 3 - 20 mA Vo Output Voltage 3 - a4 Ry Series Resistor 1 - 270 Q MICRONAS INTERMETALL 5HAL300 Electrical Characteristics at T, = 40 C to +170 C , Vpp = 4.5 V to 24 V, as not otherwise specitied in Conditions Typical Characteristics for Ty = 25 C and Vop = 12 V Supply Current lbp Supply Current over 25 5 7.5 mA Temperature Range Vppz Overvoltage Protection - 28.5 32.5 Vv lpp = 25 mA, Ty = 25 C, at Supply t= 20 ms Voz Overvoltage Protection at Gutput - 28 32.5 Vv lo. = 25 mA, Ty = 25 C, t=20 ms VoL Output Voltage - 180 250 mV Vop = 12 V, Io = 20 mA, Ty = 25C VoL Output Voltage over - 180 400 mV lo=20 mA Temperature Range lou Output Leakage Current - 0.06 1 HA Vou = 4.5 V... 24 V, AB< ABorF: Ty = 25C lou Output Leakage Current over - 0.06 10 WA Vou = 4.5 V...24 V, Temperature Range AB < ABorrf, Ty #150 C fose Internal Oscillator 42 62 75 kHz Ty = 25 C Chopper Frequency fose Internal Oscillator Chopper Fre- 36 62 78 kHz quency over Temperature Range tena) Enable Time of Output - 35 - us Vpp = 12 V, after Setting of Vpp AB > ABon + 2mT or AB < ABorr-2mT t, Output Rise Time - 80 400 ns Vpp = 12 V, RL = 820 , CL = 20 pF tf Output Fall Time - 45 400 ns Vpp = 12 V, RL = 820 , CL = 20 pF RihusB Thermal Resistance Junction to - 150 200 KAW Fiberglass Substrate case Substrate Backside 30 mm x 10mm x 1.5mm, SOT-89A pad size see Fig. 7 Rthus Thermal Resistance - 150 200 KAY case Junction to Soldering Point TO-92UA MICRONAS INTERMETALLHAL300 Magnetic Characteristics at T) = 40 C to +170 C, Vpp = 4.5 V to 24 V Typical Characteristics for Vpp = 12 V Magnetic flux density values of switching points (Condition: -10 mT < By < 10 mT) Positive flux density values reter to the magnetic south pole at the branded side ot the package. AB = Bg; Bes On point ABon 0.2 1.2 2.2 0 1.2 2.2 0.5 1.0 2.5 -2.0 0.5 3.0 mT AB > ABon Off point ABorr -2.2 -1.0 0.2 2.2 -1.0 0 2.5 1.1 0.5 3.0 -1.2 2.0 mT AB < ABorr Hysteresis 1.2 2.2 3.0 1.2 2.2 3.0 1.0 2.1 3.0 0.8 1.7 3.0 mT ABnys = ABon ABorr Offset ABorrsET = 11 | o4 wa fad |oo4 | a4 fas |}or | 15 |-25 | 5 | 25 | mt (ABon + ABorr}/2 5.0 Vou # Qutput Voltage ABorF min ABorr 9 ABon ABon max ABuys AB = Bs; Bsa Fig. 7: Recommended pad size SOT-89A Fig. 6: Definition of switching points and hysteresis Dimensions in mm MICRONAS INTERMETALL tHAL300 mT 2.5 2.0 ABon ABorF 1.5 05 0 5 10 15 20 25 30V Vop Fig. 8: Typical magnetic switch points versus supply voltage mT 2.5 2.0 ABon ABorF 1.5 eR) 50 0 50 100 150 200 C Ta Fig. 10: Typical magnetic switch points versus ambient temperature mT 2.5 2.0 ABoFF 4.5 05 * Vop Fig. 9: Typical magnetic switch points versus supply voltage 3 35 40 45 50 55 60V mA 25 ; 20 : bo Tayano| 15 poms Ta = 25 OC : Ld i h Ta = 150C : i 10 fl i i inniPeses m4 a 5 -15-10 -5 0 5 10 15 20 2 30V Vop Fig. 11: Typical supply current versus supply voltage MICRONAS INTERMETALLHAL300 mA | j\ Ta = 40C 6 op | P [ Tar 282 5 . 4 : Ta= 150C Pe tf / 3 7 ? j /] 1 7 : js of 1 2 3 4 5 6 t BV Vop Fig. 12: Typical supply current versus supply voltage mV 500 T lo = 20 mA VoL 400 | Ta = 150 C 300 200 Ta= 25 C al Ta =40 C 100 0 5 190 15 20 25 30 V Vpop Fig. 14: Typical output low voltage versus supply voltage mA N Ipp IN 5 Ss Vop = 24 SS Vop = 12 V 4 SS Vpp = 4.5V 3 2 0 -50 0 50 100 150 200 C Ta Fig. 13: Typical supply current versus ambient temperature mV 500 | lo = 20 mA Vor 400 | Vpp =4.5V 300 fF LO Vpp = 24 200 2 \ 100 50 0 50 100 150 200 C Ta Fig. 15: Typical output low voltage versus ambient temperature MICRONAS INTERMETALLHAL300 kHz 70 25C >t ll 60 fose 40 30 20 10 0 5 10 15 20 25 30 V Vop Fig. 16: Typical internal chopper frequency versus supply voltage kHz 70 Vop=12V 60 a 50 40 30 20 10 0 -50 0 50 100 150 200C Ta Fig. 18: Typical internal chopper frequency versus ambient temperature kHz 70 60 fosc / 50 40 30 20 10 3 35 40 45 50 55 60V * Yop Fig. 17: Typical internal chopper frequency versus supply voltage 10 lou VoH=24V / \ 5Vv 0 Vpp = 50 0 50 100 150 200 C Ta Fig. 19: Typical output leakage current versus ambient temperature 10 MICRONAS INTERMETALLHAL300 WA 2 10 Vop =5V 10! lou 10 Ta = 125C | 10! 10 Ta = 75C J 10 10+ Ta = 25C S eel 10 20 22 24 26 2B 30 V * Vou Fig. 20: Typical output leakage current versus output voltage Application Notes Mechanical stress can change the sensitivity of the Hall plates and an offset of the magnetic switching points may result. External mechanical stress to the package can influence the magnetic parameters if the sensor is used under back-biased applications. This piezo sensi- tivity of the sensor IC cannot be cempletely compen- sated for by the switching offset compensation tech- nique. For back-biased applications, the HAL320 is recom- mended. In such cases, please contact our Application Department. They will provide assistance in avoiding applications which may induce stress to the ICs. This stress may cause crifts of the magnetic parameters indi- cated in this data sheet. For electromagnetic immunity, it is recommended to ap- ply a 4.7 nF capacitor between Vpp (pin 1) and Ground (pin 2). For automotive applications, a 220 series re- sistor to pin 1 is recommended. Because of the Ipp peak at 4.1 V, the series resistor should not be greater than 270 The series resister and the capacitor should be placed as close as possible to the IC. Ambient Temperature Due to the internal power dissipation, the temperature on the silicon chip (junction temperature Ty) is higher than the temperature outside the package (ambient tem- perature Ta). Ty =Ta + AT At static conditions, the following equations are valid: tor SOT-89A: AT = Ipp * Vpp * Rihusp tor TO-92UA: AT = Ilpp * Vpp * Rita For typical values, use the typical parameters. For worst case calculation, use the max. parameters for Ipp and Rip. and the max. value for Vpp from the application. Test Circuits for Electromagnetic Compatibility Test pulses Veyic corresponding to DIN 40839. Fig. 21: Test circuit 2: test procedure for class A Ry Veme O; Fig. 22: Test circuit 1: test procedure for class C MICRONAS INTERMETALL 11HAL300 Interferences conducted along supply lines in 12 V onboard systems Preduct standard: DIN 40839 part 1 1 IV 100 1 5000 Cc 5 s pulse interval 2 IV 100 1 5000 Cc 0.5 s pulse interval 3a IV -150 2 1h A 3b IV 100 2 th A 4 IV 7 2 5 A 5 IV 86.5 1 10 Cc 10 s pulse interval Electrical transient transmission by capacitive and inductive coupling via lines other than the supply lines Product standard: DIN 40839 part 3 ee ee BEES ; circuit = | Times Ck 1 IV -30 2 500 A 5 s pulse interval 2 IV 30 2 500 A 0.5 s pulse interval 3a IV -60 2 10 min A 3b IV 40 2 10 min A Radiated Disturbances Preduct standard: DIN 40839 part 4 Test Conditions Temperature: Room temperature (22...25 C) Supply voltage: 13V Lab equipment: TEM cell 220 MHz (VW standard) with adaptor board 455 mm, device 80 mm over ground Frequency range: 5...220 MHz; 1 MHz steps Test circuit 2 with Ry, = 1.2 kQ Tested Devices and Results HAL300 > 200 Vim 1 kHz 80% | output voltage stable on the level high or low?) 1) low level <0.4 V, high level > 90% of Vpop 12 MICRONAS INTERMETALLHAL300 MICRONAS INTERMETALL 13HAL300 14 MICRONAS INTERMETALLHAL300 MICRONAS INTERMETALL 15HAL300 Data Sheet History 1. Final data sheet: HAL300 Differential Hall Effect Sensor IC, July 15, 1998, 6251-345-1DS. First release of the final data sheet. MICRONAS INTERMETALL GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg (Germany) P.O. Box 840 D-79008 Freiburg (Germany) Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@intermetall.de Internet: htto:/Awww.intermetall.de Printed in Germany by Systemdruck+Verlags-GmbH, Freiburg (07/98) Order No. 6251-345-1DS All information and data contained in this data sheet are with- out any commitment, are not to be considered as an offer for conclusion of a contract nor shall they be construed as to create any liability. Any new issue of this data sheet invalidates previous issues. Product availability and delivery dates are ex- clusively subject to our respective order confirmation form; the same applies to orders based on development samples deliv- ered. By this publication, MIGRONAS INTERMETALL GmbH does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Reprinting is generally permitted, indicating the source. How- ever, our prior consent must be obtained in all cases. 16 MICRONAS INTERMETALL