UNISONIC TECHNOLOGIES CO., LTD
2SC3356 NPN SILICON TRANSISTOR
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Copyright © 2009 Unisonic Technologies Co., Ltd QW-R206-024,D
HIGH FREQUENCY LOW NOISE
AMPLIFIER
DESCRIPTION
The UTC 2SC3356 is designed for such applications as: DC/DC
converters, supply line switching, battery charger, LCD backlighting,
peripheral drivers, Driver in low supply voltage applications (e.g.
lamps and LEDs) and inductive load driver (e.g. relays, buzzers and
motors).
FEATURES
* Low Noise and High Gain
* High Power Gain
ORDERING INFORMATION
Ordering Number Pin Description
Normal Lead Free Plating Halogen Free Package 1 2 3 Packing
2SC3356-x-AE3-R 2SC3356L-x-AE3-R 2SC3356G-x-AE3-R SOT-23 E B C Tape Reel
MARKING
2SC3356 NPN SILICON TRANSISTOR
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ABSOLUTE MAXIMUM RATING
PARAMETER SYMBOL RATINGS UNIT
Collector to Base Voltage BVCBO 20 V
Collector to Emitter Voltage BVCEO 12 V
Emitter to Base Voltage BVEBO 3 V
Collector Current IC 100 mA
Power Dissipation PD 200 mW
Junction Temperature TJ 150 °С
Storage Temperature TSTG -65~ +150 °С
Notes: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Cut-Off Current ICBO V
CB =10 V,IE =0 1.0 μA
Emitter-Base Cut-Off Current IEBO V
EB =1 V, IC=0 1.0 μA
DC Current Gain hFE V
CE =10 V, IC =20 mA 50 300
Gain Bandwidth Product fT V
CE =10 V, IC =20 mA 7 GHz
Feed-Back Capacitance CRE V
CB =10 V, IE =0, f =1.0MHz 1.0 pF
Noise Figure NF VCE =10 V, IC =7mA, f =1.0GHz 2.0 dB
CLASSIFICATION OF hFE
RANK A B C
RANGE 50-160 160-240 240-300
UNISONIC TECHNOLOGIES CO., LTD
2SC3356 NPN SILICON TRANSISTOR
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Copyright © 2009 Unisonic Technologies Co., Ltd QW-R206-024,D
TYPICAL CHARACTERISTICS
Total Power Dissipation, PT(mW)
Feed-back Capacitance, CRE (pF)
VCE=10V
100
200
50
20
10
0.5 1 510 50
Collector Current, IC (mA)
DC Current Gain vs. Collector Current
VCE=10V
f=1.0GHz
15
10
5
0
0.5 1 510 50
Collector Current, IC (mA)
70
Insertion Gain vs. Collector Current
Gain Bandwidth Product, fT(MHz)
Insertion Gain,|S21θ|2(dB)
Maximum Gain, GMAX (dB)
UNISONIC TECHNOLOGIES CO., LTD
2SC3356 NPN SILICON TRANSISTOR
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Copyright © 2009 Unisonic Technologies Co., Ltd QW-R206-024,D
TYPICAL CHARACTERISTICS(Cont.)
VCE=10V
f=1.0GHz
7
6
5
4
3
2
1
0
0.5 1 5 10 50 70
Collector Current, IC(mA)
Noise Figure, NF (dB)
Noise Figure vs. Collector Current
Collector to Emitter Voltage, VCE (V)
Noise Figue, NF (dB)
Noise Figure, Forward Insertion Gain
vs. Collector to Emitter Voltage
f=1.0GHz
IC=20mA
NF
|S21θ|2
5
4
3
2
1
0
0246810
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
