VS-MBR360TR-M3 - Vishay Presicion Group

VS-MBR350, VS-MBR350-M3, VS-MBR360, VS-MBR360-M3

www.vishay.com Vishay Semiconductors

Revision: 13-Oct-11 1Document Number: 93450

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Schottky Rectifier, 3 A

FEATURES

• Low profile, axial leaded outline

• Very low forward voltage drop

• High frequency operation

• High purity, high temperature epoxy

encapsulation for enhanced mechanical

strength and moisture resistance

• Guard ring for enhanced ruggedness and long

term reliability

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for commercial level

• Halogen-free according to IEC 61249-2-21 definition

(-M3 only)

DESCRIPTION

The VS-MBR350..., VS-MBR350 axial leaded Schottky

rectifier has been optimized for very low forward voltage

drop, with moderate leakage. Typical applications are in

switching power supplies, converters, freewheeling diodes,

and reverse battery protection.

PRODUCT SUMMARY

Package DO-201AD (C-16)

IF(AV) 3 A

VR50 V, 60 V

VF at IF0.64 V

IRM max. 15 mA at 125 °C

TJ max. 150 °C

Diode variation Single die

EAS 5.0 mJ

Cathode Anode

C-16

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

IF(AV) Rectangular waveform 3.0 A

VRRM 50/60 V

IFSM tp = 5 μs sine 460 A

VF3 Apk, TJ = 25 °C 0.73 V

TJ- 40 to 150 °C

VOLTAGE RATINGS

PARAMETER SYMBOL VS-MBR350 VS-MBR350-M3 VS-MBR360 VS-MBR360-M3 UNITS

Maximum DC reverse voltage VR

50 50 60 60 V

Maximum working peak

reverse voltage VRWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current

See fig. 4 IF(AV) 50 % duty cycle at TL = 50 °C, rectangular waveform 3.0

Maximum peak one cycle

non-repetitive surge current

See fig. 6

IFSM

5 µs sine or 3 µs rect. pulse Following any rated load

condition and with rated

VRRM applied

460

10 ms sine or 6 ms rect. pulse 80

Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1 A, L = 10 mH 5.0 mJ

Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs

Frequency limited by, TJ maximum VA = 1.5 x VR typical 1.0 A

VS-MBR350, VS-MBR350-M3, VS-MBR360, VS-MBR360-M3

www.vishay.com Vishay Semiconductors

Revision: 13-Oct-11 2Document Number: 93450

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

(1) Pulse width < 300 μs, duty cycle < 2 %

Notes

(1) thermal runaway condition for a diode on its own heatsink

(2) Mounted 1" square PCB, thermal probe connected to lead 2 mm from package

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage drop

See fig. 1 VFM (1)

1.0 A

TJ = 25 °C

0.58

3.0 A 0.73

9.4 A 1.06

1.0 A

TJ = 125 °C

0.49

3.0 A 0.64

9.4 A 0.89

Maximum reverse leakage current

See fig. 2 IRM (1)

TJ = 25 °C

VR = Rated VR

0.6

mATJ = 100 °C 8

TJ = 125 °C 15

Typical junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 190 pF

Typical series inductance LSMeasured lead to lead 5 mm from package body 9.0 nH

Maximum voltage rate of change dV/dt Rated VR10 000 V/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage

temperature range TJ (1), TStg - 40 to 150 °C

Maximum thermal resistance,

junction to lead RthJL (2) DC operation

See fig. 4 30 °C/W

Approximate weight 1.2 g

0.042 oz.

Marking device Case style C-16 MBR350

MBR360

dPtot

dTJ

------------- 1

RthJA

--------------<

VS-MBR350, VS-MBR350-M3, VS-MBR360, VS-MBR360-M3

www.vishay.com Vishay Semiconductors

Revision: 13-Oct-11 3Document Number: 93450

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 1 - Maximum Forward Voltage Drop Characteristics

Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

Fig. 4 - Maximum Allowable Lead Temperature vs.

Average Forward Current

Fig. 5 - Forward Power Loss Characteristics

Fig. 6 - Maximum Non-Repetitive Surge Current

Note

(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;

Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR

IF - Instantaneous Forward Current (A)

VFM - Forward Voltage Drop (V)

93450_01

0.1

100

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

TJ = 150 °C

TJ = 125 °C

TJ = 25 °C

IR - Reverse Current (mA)

VR - Reverse Voltage (V)

93450_02

0.001

0.01

0.1

100

0 20 40 60

TJ = 25 °C

TJ = 125 °C

TJ = 150 °C

CT - Junction Capacitance (pF)

VR - Reverse Voltage (V)

93450_03

100

1000

0 40 80 120 160

T = 25 °C

Allowable Lead Temperature (°C)

IF(AV) - Average Forward Current (A)

93450_04

100

120

140

160

0 1 2 3 4 5

Square wave (D = 0.50)

80% Rated VR applied

see note (1)

Average Forward Current - IF(AV) (A)

Average Power Loss (W)

93450_05

0.5

1.5

2.5

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

RMS Limit D = 0.20

D = 0.25

D = 0.33

D = 0.50

D = 0.75

tp - Square Wave Pulse Duration (µs)

IFSM - Non-Repetitive Surge Current (A)

93450_06

100

1000

10 100 1000 10 000

At Any Rated Load Condition

And With rated VRRM Applied

Following Surge

VS-MBR350, VS-MBR350-M3, VS-MBR360, VS-MBR360-M3

www.vishay.com Vishay Semiconductors

Revision: 13-Oct-11 4Document Number: 93450

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

ORDERING INFORMATION TABLE

ORDERING INFORMATION (Example)

PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION

VS-MBR350 500 500 Bulk

VS-MBR350TR 1200 1200 Tape and reel

VS-MBR350-M3 500 500 Bulk

VS-MBR350TR-M3 1200 1200 Tape and reel

VS-MBR360 500 500 Bulk

VS-MBR360TR 1200 1200 Tape and reel

VS-MBR360-M3 500 500 Bulk

VS-MBR360TR-M3 1200 1200 Tape and reel

- Schottky MBR series

- Current rating: 3 = 3 A

- Voltage rating

- TR = Tape and reel package

None = Bulk package

50 = 50 V

60 = 60 V

Device code

2 43 5

MBR 3 60 TRVS-

-M3

- Vishay Semiconductors product

None = Lead (Pb)-free and RoHS compliant

-M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free

- Environmental digit

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95242

Part marking information www.vishay.com/doc?95304

Packaging information www.vishay.com/doc?95338

Outline Dimensions

www.vishay.com Vishay Semiconductors

Revision: 29-Aug-11 1Document Number: 95242

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Axial DO-201AD (C-16)

DIMENSIONS in millimeters (inches)

21.0 (0.83) MIN.

(2 places)

10.0 (0.39)

MAX.

Ø 5.8 (0.23)

MAX.

10.0 (0.39)

MAX.

Ø 5.8 (0.23)

MAX.

21.0 (0.83) MIN.

(2 places)

2.54 (0.100) MAX.

Flash (2 places)

Ø 1.40 (0.055)

Ø 1.20 (0.047)

(2 places)

Ø 1.40 (0.055)

Ø 1.20 (0.047)

(2 places)

Cathode band

Legal Disclaimer Notice

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Revision: 02-Oct-12 1Document Number: 91000

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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council

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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference

to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21

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