_ THYRISTORS 03P2M,03P4M 0.47 A(R.M.S.)ALL DIFFUSED MOLD TYPE SCR yo ms DESCRIPTION .. PACKAGE DIMENSIONS oe In millimeters J) The 03P2M and O3P4M are P-gate all diffused mold type SCR rated at 0.47 B.2 MAK > Amps RMS maximum on-state current, with rated voltages up to 400 volts, . a} FEATURES po , \ Plastic TO-92 package. Ween - - 200 pA gate sensitivity. Lo MBps 5 mA holding current. 0.8 x .. Wh 6 A surge current. APPLICATIONS Cassette tape recorder, Television Automobile equipment Photoflash Automatic gas lighter, Solid-state relay Light display equipment Motor, solenoid and temperature control etc. MAXIMUM RATINGS (Rex 1k2} ITEM SYMBOL O3P2M O3P4M UNIT Non-Repetitive Peak Reverse Voltage VAsM 300 S00 v Non-Repetitive Peak Off-Srate Voltage . Vosm 300 500 v Repetitive Peak Reverse Voltage VaAM 200 400 Vv Repetitive Peak Off-State Voltage . VORM 200 400 Vv Average On-State Current itlav} 0.3 (Tg*30 C, Single phase half wave) A RMS On-State Current hyuRms) 0.47 A Surge On-State Current ITSM 8 (f-50 Hz, 1 cycle) A Fusing Current fiyrdt 0,15 (1 ms < t < 10 ms) Als Peak Gate Power Dissipation Pom 0.1 {f > GO Hz, duty < 10 %) w Average Gate Power Dissipation Paiav) 0.01 w Peak Gate Forward Current Fam 0.4 (f 2 50 Hz, duty & 10%) Peak Gate Reverse Voltage VRGM 6 Vv Junction Temperature T} 40 to +125 c Storage Tempereture Tstg ~40 to +150 c NEC Corporation 1983 NEC Cormorationeet 6 earea TCE RE UE ELECTRICAL CHARACTERISTICS (Tj = 25C, Rax = 1k) ITEM SYMBOL TEST CONDITIONS MIN. TYP.. MAX, UNIT . T= 268C - - 10 ( Repetitive Peak Reverse Current IRRM -Vrau * VARAM T= 126C ~ 100 uA - = Repetitive Peak Off-State Current _ . - IpRM VpMm = VDRM 7 = a ts se BA Critical Rate of Rise of Off-State Voltege dv/dt Vp = VDRM, Tj = 128C - 40 ~ Vins On-State Voltage Vm [TMT4A - - 2.5 Vv Gate Trigger Current lor Vom =6V,RL = 1002 - ~ 200 HA Gate Trigger Voltage VGT Vom =6V,AR_ 21002 _ - 0.3 Vv Gate Non-Trigger Voltage Veo Vom 5 VoRM. Tj * 125C 0.1 - - Vv Holding Current ley Vom =24V, 1M "4A - - 5 mA trv = 200 mA, dit/dt= 15 A/us Commutating Turn-Off Time tq Vamz 25 V.Vom=4 VoRM - 25 = a dv/dt = 20 Vius, Tj = 125C Junction to Case Rth(j-c) (flat side of case is temperature - - 125 Thermal Resistance reference point) Cw oo 2 Rth(j-a) Junetion to Ambient _ _ 230 Fig. 1 Im Vom CHARACTERISTICS Fig.2 itgy RATING 1 MAX. Non repetitive ; = 16 3 . - 3 4 & oe s z s & & 10! a Junction temperature 6 1 2 3 b prior to surges " YTMOn-State Voltage--V = se 4 Cycies Fig.3 GATE POWER RATINGS Fig.4 Igg Ver DISTRIBUTION ies . ; 4 * 2 g 3 & 3 s z Pom=100 mW . 50 Hz a 2 dutys10 % 2 2 8 & . AV)=10 mW. L { > g ~ > lFGM=100 mA 0 20 40 60 80 100 120 9 1.0 2.0 ipqGate Forward CurrentmA IgsgTrigger CurrentmAFig. & let - Te TYPICAL DISTRIBUTION wo 1000 ~ 100 IgyGate Trigger CurrentpA 3 0.1 20 0 20 40 60 80 100-120 TaAmbient Temperature"C Fig. 7 lag tq TYPICAL DISTRIBUTION Ta=25 c 100 < 10 E i i : 2 i a i . % 7) z I 8 0 0.01 10 1 %Trigger Pulse Widthys Fig. 9 Priay) It(ay) CHARACTERISTICS [= 0 Prcav) Average On-State Power Dissipation W , o 100 200 300 400 500 IT~av) Average On-State CurrentmA YeTGate Trigger VoltageV VeTGate Trigger VoltageV IT(AV)Average On-State CurrentmA Fig. 6 Vg7 Te TYPICAL DISTRIBUTION 10 08 0.6 04 02 -20 90 20 40 60 480 100120 TaAmbient TemperaturaC Fig. 8 VGT-TG TYPICAL DISTRIBUTION 1.0 Ta=25 C 08 06 04 0.2 300 1900 7%aTrigger Pulse Widthys Fig. 10 It(ay) T, RATINGS Ta Ambient, Temperature Cfede eh ietsareaay! Fig. 11 ty T, TYPICAL DISTRIBUTION { 10 = i ~ 5 1 3 3 Oe & 3 z boon 0.01 20 5 20 40 = 60 80 100 126 , _ Tg-Ambient Temperature'C Fig. 72 2y, CHARACTERISTICS 3 dunctian to case at center of fiat side 8 Zih-~ Transient Themal Impedance C/W _ oS tTimes NEC Corporation INTERNATIONAL ELECTRON DEVICES Div. NEC Building, 33-t, Shiba Gochome Minato-ku, Tokyo 108, Japen Tel: Tokyo 454-1111 Telex Address: NECTOK J22686 Cable Address: MICROPHONE TOKYO . a $C1022 AUG.3083M Printed in Japan