SKiiP 402GD061-358CTV
by SEMIKRON 021015 B 7 − 5
I. Power section
bsolu te maximum ra tings Ts = 25°C unless otherwise specified
Symbol Conditions Values Units
IGBT
VCES 600 V
VCC 1) Operatin g DC link vol tage 400 V
VGES ± 20 V
ICTs = 25 (70) °C 400 (300) A
Inverse diode
IF = -ICTs = 25 (70) ° C 400 (300) A
IFSM Tj = 150 °C, tp = 10ms; sin 4000 A
I
t (Diode) Diode, Tj = 150 °C, 10ms 80 kA2s
Tj , (Tstg) -40 (-25) ...+150 (125) °C
Visol AC, 1min. 2500 V
Characteristics Ts = 25°C unless otherwise specified
Symbol Conditions min. typ. max. Units
GBT
VCEsat IC = 400A, Tj = 25 ( 125)°C −2,3 (2, 6) 2,6 V
VCEO Tj = 25 (125) °C −0,8 (0,7) 1,0 (0,9) V
rCE Tj = 25 (125) °C −3,8 (4,8) 4,0 (5,0) mΩ
ICES V
E=0,V
E=V
ES,Tj=25(125) °C −(20) 0,4 mA
I
=400A, Vcc=300V −− 36 mJ
Eon + Eoff Tj=125°C Vcc=400V −− 53 mJ
RCC´-EE´ terminal chip, Tj = 125 °C −0,50 −mΩ
LCE top, bot tom −15,0 −nH
CCHC per phase, AC-side −0,8 −nF
nverse di ode
VF = VEC IF= 400A; Tj = 25(125) °C −1,5 (1, 5) 1,8 V
VTO Tj = 25 (125) °C −0,8 (0,6) 1,0 (0,8) V
rTTj = 25 (125) °C −1,8 (2,2) 1,9 (2,3) mΩ
IC=400A Vcc=300V −− 13 mJ
ERR Tj=125°C Vcc=400V −− 15 mJ
echanical data
Mdc DC terminals, SI Units 6 −8Nm
Mac AC terminals, SI Units 13 −15 Nm
wSKiiP 2 System w/o heat sink −2,7 −kg
w heat si nk −6,6 −kg
Thermal characteristics (P16 heat sink; 295 m^3/ h); "r" reference t o
temperature sensor
RthjrIGBT per IGBT −−
0,111 K/W
Rthjrdiode per diode −−
0,200 K/W
Rthra per modul e −−
0,036 K/W
Zth Ri (mK/W) (max.) taui(s)
1234 1 2 3 4
IGBTjr 12 86 13 −1 0,13 0,001 −
diodejr 22 154 24 −1 0,13 0,001 −
heatsinkra 11,1 18,3 3,5 3,1 204 60 6 0,02
SKiiP
2
SK integrated intelligent
Power
6-pack
SKiiP 402GD061-358CTV
Case S3
eatures
• SKiiP technology inside
• low loss IGBTs
• CAL diod e technology
• integrated curr ent se nsor
• integrated temperature sensor
• integrated heat sink
• IEC 60721-3-3 (humidity) class
3K3/IE32 (SKiiP 2 Sy stem)
• IEC 68T.1 (climate) 40/ 125/56
(SKiiP 2 power se ction)
1) with assembl y of suitable MKP
capacitor per terminal (SEMIKRON
type is recom mended)
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee,
expr esse d or implied is made r egarding deliver y, perform ance or suitability.