W24257Q-70LL - Winbond Electronics

W24257

32K

8 CMOS STATIC RAM

Publication Release Date: February 2001

- 1 - Revision A16

GENERAL DESCRIPTION

The W24257 is a slow speed, low power CMOS static RAM organized as 32768 × 8 bits that operates

on a single 5-volt power supply. This device is manufactured using Winbond's high performance

CMOS technology.

FEATURES

• Low power consumption:

− Active: 325 mW (max.)

− Standby: 75 µW (max.) (LL-version)

150 µW (max.) (L-version)

• Access time: 70 nS (max.)

• Single +5V power supply

• Fully static operation

• All inputs and outputs directly TTL compatible

• Three-state outputs

• Battery back-up operation capability

• Data retention voltage: 2V (min.)

• Packaged in 28-pin 330 mil SOP,

standard type one TSOP (8 mm x 13.4 mm )

PIN CONFIGURATIONS

A11

A10

I/O8

I/O7

I/O6

I/O5

I/O4

A13

#CS

#OE

#WE

VDD

A14

A12

I/O2

I/O3

I/O1

28-pin

SOP

28-pin

TSOP

#OE

A11

A13

#WE

VDD

A14

A12

A10

#CS

I/O8

I/O7

I/O6

I/O5

I/O4

I/O3

I/O2

I/O1

VSS

BLOCK DIAGRAM

#CS

A14

#WE

I/O1

I/O8

#OE

VDD

VSS

DATA I/O

DECODER

CONTROL

CORE

ARRAY

PIN DESCRIPTION

SYMBOL DESCRIPTION

A0−A14 Address Inputs

I/O1−I/O8 Data Inputs/Outputs

#CS Chip Select Input

#WE Write Enable Input

#OE Output Enable Input

VDD Power Supply

VSS Ground

W24257

- 2 -

TRUTH TABLE

#CS

#OE

#WE

MODE I/O1

−

I/O8 VDD CURRENT

H X X Not Selected High Z ISB, ISB1

L H H Output Disable High Z IDD

L L H Read Data Out IDD

L X L Write Data In IDD

DC CHARACTERISTICS

Absolute Maximum Ratings

PARAMETER RATING UNIT

Supply Voltage to VSS Potential -0.5 to +7.0 V

Input/Output to VSS Potential -0.5 to VDD +0.5 V

Allowable Power Dissipation 1.0 W

Storage Temperature -65 to +150 °C

Operating Temperature 0 to +70 °C

Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability

of the device.

Operating Characteristics

(VDD = 5V ±10%, VSS = 0V, TA = 0 to 70° C for LL/L; -20 to 85° C for LE)

PARAMETER SYM.

TEST CONDITIONS MIN.

TYP.

MAX. UNIT

Input Low Voltage VIL - -0.5

- +0.8 V

Input High Voltage VIH - +2.2

- VDD +0.5

Input Leakage Current

ILI VIN = VSS to VDD -2 - +2 µA

Output Leakage

Current ILO VI/O = VSS to VDD, #CS = VIH

(min.) or #OE = VIH (min.) or

#WE = VIL (max.)

-2 - + 2 µA

Output Low Voltage VOL

IOL = +4.0 mA - - 0.4 V

Output High Voltage VOH

IOH = -1.0 mA 2.4 - - V

Operating Power

Supply Current IDD #CS = VIL (min.),

I/O = 0 mA Cycle = min.,

Duty = 100%

- - 70 mA

Standby Power

Supply Current ISB #CS = VIH (min.)

Cycle = min., Duty = 100% - - 3 mA

ISB1

#CS ≥ VDD -0.2V LL/LE

- - 15 µA

L - - 30 µA

Note: Typical characteristics are at VDD = 5V, TA = 25° C.

W24257

Publication Release Date: February 2001

- 3 - Revision A16

CAPACITANCE

(VDD = 5V, TA = 25° C, f = 1 MHz)

PARAMETER SYM. CONDITIONS MAX. UNIT

Input Capacitance CIN VIN = 0V 6 pF

Input/Output Capacitance CI/O VOUT = 0V 8 pF

Note: These parameters are sampled but not 100% tested.

AC CHARACTERISTICS

AC Test Conditions

PARAMETER CONDITIONS

Input Pulse Levels 0.6V to 2.4V

Input Rise and Fall Times 5 nS

Input and Output Timing Reference Level 1.5V

Output Load CL = 100 pF, IOH/IOL = -1 mA/4 mA

AC Test Loads and Waveform

90% 90%

5 nS

10%

5 nS 10%

R1 1000 ohm

OUTPUT

660 ohm

5 pF R2

660 ohm

R1 1000 ohm

OUTPUT

100 pF

Including

Jig and

Scope

3.0V

Including

Jig and

Scope

)

(ForTCLZ,,,,,

TOLZ TCHZ TOHZ TWHZ TOW

W24257

- 4 -

AC Characteristics, continued

(VDD = 5V ±10%, VSS = 0V, TA = 0 to 70° C for LL/L; -20 to 85° C for LE)

Read Cycle

PARAMETER SYMBOL

W24257-70 UNIT

MIN. MAX.

Read Cycle Time TRC 70 - nS

Address Access Time TAA - 70 nS

Chip Select Access Time TACS - 70 nS

Output Enable to Output Valid TAOE - 35 nS

Chip Selection to Output in Low Z TCLZ* 10 - nS

Output Enable to Output in Low Z TOLZ* 5 - nS

Chip Deselection to Output in High Z TCHZ* - 30 nS

Output Disable to Output in High Z TOHZ* - 30 nS

Output Hold from Address Change TOH 10 - nS

∗ These parameters are sampled but not 100% tested

Write Cycle

PARAMETER SYMBOL

W24257-70 UNIT

MIN. MAX.

Write Cycle Time TWC 70 - nS

Chip Selection to End of Write TCW 60 - nS

Address Valid to End of Write TAW 60 - nS

Address Setup Time TAS 0 - nS

Write Pulse Width TWP 45 - nS

Write Recovery Time #CS, #WE

TWR 0 - nS

Data Valid to End of Write TDW 30 - nS

Data Hold from End of Write TDH 0 - nS

Write to Output in High Z TWHZ* - 30 nS

Output Disable to Output in High Z TOHZ* - 30 nS

Output Active from End of Write TOW 0 - nS

∗ These parameters are sampled but not 100% tested

W24257

Publication Release Date: February 2001

- 5 - Revision A16

TIMING WAVEFORMS

Read Cycle 1

(Address Controlled)

Address

TRC

TOH TOH

DOUT

Read Cycle 2

(Chip Select Controlled)

#CS

DOUT

TCLZ

TACS CHZ

Read Cycle 3

(Output Enable Controlled)

Address

TRC

#CS

DOUT

TAA

#OE

TAOE

TOLZ

TOH

CLZ

TCHZ

TACS TOHZ

W24257

- 6 -

Timing Waveforms, continued

Write Cycle 1

Address

#OE

#CS

#WE

DOUT

DIN

TWC

TWR

TCW

TWP

TAS

TOHZ (1, 4)

TDW TDH

TAW

Write Cycle 2

(

= VIL Fixed)

Address

#CS

#WE

DOUT

DIN

TWC

TCW

TAS

TDH

TWR

TWP

TWHZ

(2) (3)

TOW

TOH

(1, 4)

Notes:

1. During this period, I/O pins are in the output state, so input signals of opposite phase to the outputs should not be applied.

2. The data output from DOUT are the same as the data written to DIN during the write cycle.

3. DOUT provides the read data for the next address.

4. Transition is measured ±500 mV from steady state with CL = 5 pF. This parameter is guaranteed but not 100% tested.

W24257

Publication Release Date: February 2001

- 7 - Revision A16

DATA RETENTION CHARACTERISTICS

(TA = 0 to 70° C for LL/L; -20 to 85° C for LE )

PARAMETER SYM.

TEST CONDITIONS MIN.

TYP.

MAX.

UNIT

VDD for Data Retention VDR #CS ≥ VDD -0.2V 2.0

- - V

Data Retention Current IDDDR

#CS ≥ VDD -0.2V

LL/LE

- - 15 µA

VDD = 3V L - - 30 µA

Chip Deselect to Data Retention Time

TCDR

See data retention 0 - - nS

Operation Recovery Time TR Waveform TRC*

- - nS

TRC* = Read Cycle Time

DATA RETENTION WAVEFORM

4.5V V>2V

DATA RETENTION MODE

#CS

4.5V

-0.2V

#CS1>VDD

VDD

TCDR

VIH VIH

ORDERING INFORMATION

PART NO. ACCESS

TIME

(nS)

OPERATING

CURRENT

MAX. (mA)

STANDBY

CURRENT

MAX. (

OPERATING

TEMP.

(°C)

PACKAGE

W24257S-70LL 70 70 15 0 to 70 330 mil SOP

W24257S-70L 70 70 30 0 to 70 330 mil SOP

W24257S-70LE 70 70 15 -20 to 85 330 mil SOP

W24257Q-70LL 70 70 15 0 to 70 Standard type one TSOP

W24257Q-70L 70 70 30 0 to 70 Standard type one TSOP

W24257Q-70LE 70 70 15 -20 to 85 Standard type one TSOP

Notes:

1. Winbond reserves the right to make changes to its products without prior notice.

2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in

applications where personal injury might occur as a consequence of product failure.

W24257

Publication Release Date: January 2001

- 8 - Revision A16

BONDING PAD DIAGRAM

A14

A12

822

A2 A10

OEB

A11

WEB

VDDVDD

A13

529 2425

630 28

11 12 13 15 16 17 18

A0 I/O0 I/O1 I/O2 VSS VSS I/O4 I/O5 I/O6

10 20

CSB

14 21

I/O7I/O3

AC5394

PAD NO.

X Y

1 -232.25 1445.22

2 -351.70 1445.22

3 -471.15 1445.22

4 -590.60 1445.22

5 -710.05 1445.22

6 -829.50 1445.22

7 -992.79 1362.24

8 -992.79 -1306.11

9 -857.86 -1452.79

10 -738.41 -1452.79

11 -594.84 -1414.13

12 -451.06 -1414.13

13 -310.67 -1414.13

14 -171.78 -1405.28

15 24.45 -1405.28

16 151.80 -1414.13

17 298.07 -1414.13

18 443.28 -1414.13

19 588.20 -1414.13

20 732.84 -1414.13

21 871.11 -1452.79

22 992.75 -1312.15

23 992.75 1373.67

24 810.09 1445.22

25 690.64 1445.22

26 571.19 1445.22

27 451.74 1445.22

28 332.29 1445.22

29 120.25 1444.65

30 -93.23 1444.65

Note: For bare chip form (C.O.B.) applications, the substrate must be connected to VDD or left floating in the PCB layout.

W24257

Publication Release Date: January 2001

- 9 - Revision A16

PACKAGE DIMENSIONS

28-pin SO Wide Body

28 15

Seating Plane

See Detail F

Detail F

1. Dimension D Max. & S include mold flash

or tie bar burrs.

2. Dimension b does not include dambar

protrusion/intrusion.

3. Dimension D & E include mold mismatch

and determined at the mold parting line.

0.250.20

0.0100.008

Notes:

Symbol Min. Nom. Max. Max.

Nom.

Min.

Dimension in Inches Dimension in mm

0.014 0.36

0.112 2.85

0.004

0.093

0.014

0.098

0.016

0.103

0.020

2.36

0.36

0.10

2.49

0.41

2.62

0.51

0.059

0.004

010

0.713

0.067

0.733

0.075 1.50

18.11

1.70

18.62

1.91

0.477

0.4650.453 12.1211.8111.51

0.10

8.53

8.41

8.28

0.3360.331

0.326

0.71 0.91 1.12

0.028 0.036 0.044

4. Controlling dimension: Inches.

5. General appearance spec should be based

on final visual inspection spec.

1.12 1.27 1.420.044 0.050 0.056

S1.19

0.047

28-pin Standard Type One TSOP

Controlling dimension: Millimeters

Min.

Dimension In Inches

Nom. Max. Min. Nom. Max.

Symbol

1.20

0.05 0.15

1.05

1.00

0.95

0.17

0.10

11.70

7.90

13.20

0.50

0.00

0.20 0.27

0.15 0.21

11.80 11.90

8.00 8.10

13.40 13.60

0.55

0.60 0.70

0.25

0.10

3 5

0.047

0.006

0.041

0.040

0.035

0.007 0.008 0.011

0.004 0.006 0.008

0.461 0.465 0.469

0.311 0.315 0.319

0.520 0.528 0.536

0.022

0.020 0.024 0.028

0.010

0.000 0.004

035

0.002

Dimension In mm

W24257

- 10 -

VERSION HISTORY

VERSION DATE PAGE DESCRIPTION

A12 Nov. 1999 1, 2, 7 Change the IDD, ISB, ISB1

4, 7 Remove the W24257-10 spc.

A13 Apr. 2000 7 Typo correction in Standby Current Max.: mA->µA

A14 May 2000 1, 7, 8 Delete 28-pin DIP Package

8 Add in Bonding Pad Diagram

A15 Nov. 2000 2 Modify Operating Power Supply Current (IDD) as 70 mA

1 Add in TSOP Pin Configuration

A16 Feb. 2001 2, 4, 7 Add in LE grade

Headquarters

No. 4, Creation Rd. III,

Science-Based Industrial Park,

Hsinchu, Taiwan

TEL: 886-3-5770066

FAX: 886-3-5796096

http://www.winbond.com.tw/

Voice & Fax-on-demand: 886-2-27197006

Taipei Office

11F, No. 115, Sec. 3, Min-Sheng East Rd.,

Taipei, Taiwan

TEL: 886-2-27190505

FAX: 886-2-27197502

Winbond Electronics (H.K.) Ltd.

Unit 9-15, 22F, Millennium City,

No. 378 Kwun Tong Rd;

Kowloon, Hong Kong

TEL: 852-27513100

FAX: 852-27552064

Winbond Electronics North America Corp.

Winbond Memory Lab.

Winbond Microelectronics Corp.

Winbond Systems Lab.

2727 N. First Street, San Jose,

CA 95134, U.S.A.

TEL: 408-9436666

FAX: 408-5441798

Note: All data and specifications are subject to change withou t notice.

Headquarters

No. 4, Creation Rd. III,

Science-Based Industrial Park,

Hsinchu, Taiwan

TEL: 886-3-5770066

FAX: 886-3-5796096

http://www.winbond.com.tw/

Voice & Fax-on-demand: 886-2-27197006

Taipei Office

11F, No. 115, Sec. 3, Min-Sheng East Rd.,

Taipei, Taiwan

TEL: 886-2-27190505

FAX: 886-2-27197502

Winbond Electronics (H.K.) Ltd.

Unit 9-15, 22F, Millennium City,

No. 378 Kwun Tong Rd;

Kowloon, Hong Kong

TEL: 852-27513100

FAX: 852-27552064

Winbond Electronics North America Corp.

Winbond Memory Lab.

Winbond Microelectronics Corp.

Winbond Systems Lab.

2727 N. First Street, San Jose,

CA 95134, U.S.A.

TEL: 408-9436666

FAX: 408-5441798

Note: All data and specifications are subject to change withou t notice.