SQD50N04-5m0 Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY VDS (V) * Halogen-free According to IEC 61249-2-21 Definition * TrenchFET(R) Power MOSFET * Package with Low Thermal Resistance * AEC-Q101 Qualifiedd * Compliant to RoHS Directive 2002/95/EC * Find out more about Vishay's Automotive Grade Product Requirements at: www.vishay.com/applications 40 RDS(on) () at VGS = 10 V 0.005 ID (A) 50 Configuration Single D TO-252 G Drain Connected to Tab G D S S Top View N-Channel MOSFET ORDERING INFORMATION Package TO-252 Lead (Pb)-free and Halogen-free SQD50N04-5m0-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 40 Gate-Source Voltage VGS 20 Continuous Drain Currenta TC = 25 C TC = 125 C Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 C TC = 125 C Operating Junction and Storage Temperature Range ID V 50 50 IS 50 IDM 200 IAS 62 EAS 192 PD UNIT 136 45 A mJ W TJ, Tstg - 55 to + 175 C SYMBOL LIMIT UNIT THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc RthJA 50 RthJC 1.1 C/W Notes a. Package limited. b. Pulse test; pulse width 300 s, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. Document Number: 70952 S10-1745-Rev. A, 02-Aug-10 www.vishay.com 1 SQD50N04-5m0 Vishay Siliconix SPECIFICATIONS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0 V, ID = 250 A 40 - - VGS(th) VDS = VGS, ID = 250 A 2.5 - 3.5 Gate-Source Leakage IGSS VDS = 0 V, VGS = 20 V - - 100 1.0 Zero Gate Voltage Drain Current IDSS UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductanceb ID(on) RDS(on) gfs VGS = 0 V VDS = 40 V - - VGS = 0 V VDS = 40 V, TJ = 125 C - - 50 VGS = 0 V VDS = 40 V, TJ = 175 C - - 150 VGS = 10 V VDS5 V 50 - - VGS = 10 V ID = 20 A - 0.0024 0.0050 VGS = 10 V ID = 20 A, TJ = 125 C - - 0.0082 VGS = 10 V ID = 20 A, TJ = 175 C - - 0.0100 - 120 - - 5360 6700 VDS = 15 V, ID = 15 A V nA A A S Dynamicb Input Capacitance Ciss Output Capacitance Coss - 500 627 Reverse Transfer Capacitance Crss - 250 310 Total Gate Chargec Qg - 70 105 Gate-Source Chargec - 16 - - 13 - Turn-On Delay Timec td(on) - 11 16 tr - 5 8 - 34 51 - 9 14 - - 200 A - 0.9 1.5 V Fall Timec td(off) VDS = 20 V, ID = 50 A pF Qgd Turn-Off Delay Timec VGS = 10 V VDS = 25 V, f = 1 MHz Gate-Drain Chargec Rise Timec Qgs VGS = 0 V VDD = 20 V, RL = 0.4 ID 50 A, VGEN = 10 V, Rg = 1 tf nC ns Source-Drain Diode Ratings and Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = 30 A, VGS = 0 V Notes a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 70952 S10-1745-Rev. A, 02-Aug-10 SQD50N04-5m0 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) 100 100 V GS = 10 V thru 5 V 80 ID - Drain Current (A) ID - Drain Current (A) 80 60 40 V GS = 4 V 20 60 40 T C = 25 C 20 T C = 125 C T C = - 55 C 0 0 0 3 6 9 12 15 0 4 6 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 350 10 0.010 280 RDS(on) - On-Resistance () g fs - Transconductance (S) 2 T C = - 55 C 210 T C = 25 C T C = 125 C 140 70 0.008 0.006 0.004 V GS = 6 V 0.002 V GS = 10 V 0 0 0 14 28 42 56 70 0 20 ID - Drain Current (A) 40 60 80 100 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 10 7000 C - Capacitance (pF) VGS - Gate-to-Source Voltage (V) ID = 50 A Ciss 6000 5000 4000 3000 2000 Coss 8 V DS = 20 V 6 4 2 1000 Crss 0 0 0 10 20 30 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 70952 S10-1745-Rev. A, 02-Aug-10 40 0 10 20 30 40 50 60 70 80 90 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 SQD50N04-5m0 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) 100 2.0 V GS = 10 V ID = 20 A 10 IS - Source Current (A) (Normalized) RDS(on) - On-Resistance 1.7 V GS = 6 V 1.4 1.1 T J = 150 C 1 T J = 25 C 0.1 0.8 0.01 0.001 0.5 - 50 - 25 0 25 50 75 100 125 150 175 0 0.2 TJ - Junction Temperature (C) 0.6 0.8 1.0 1.2 Source Drain Diode Forward Voltage On-Resistance vs. Junction Temperature 0.03 0.7 0.2 0.02 VGS(th) Variance (V) RDS(on) - On-Resistance () 0.4 VSD - Source-to-Drain Voltage (V) 0.01 T J = 150 C 0 2 4 6 ID = 5 mA - 0.8 ID = 250 A - 1.3 T J = 25 C 0 - 0.3 8 - 1.8 - 50 10 - 25 0 25 50 75 100 VGS - Gate-to-Source Voltage (V) TJ - Temperature (C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 125 150 175 VDS - Drain-to-Source Voltage (V) 54 ID = 10 mA 52 50 48 46 44 42 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (C) Drain Source Breakdown vs. Junction Temperature www.vishay.com 4 Document Number: 70952 S10-1745-Rev. A, 02-Aug-10 SQD50N04-5m0 Vishay Siliconix THERMAL RATINGS (TA = 25 C, unless otherwise noted) IDM Limited 100 Limited by R DS(on)* 100 s ID - Drain Current (A) ID Limited 10 1 ms 10 ms, 100 ms, 1 s, 10 s, DC 1 0.1 TC = 25 C Single Pulse 0.01 0.01 BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Document Number: 70952 S10-1745-Rev. A, 02-Aug-10 www.vishay.com 5 SQD50N04-5m0 Vishay Siliconix THERMAL RATINGS (TA = 25 C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note * The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 C) - Normalized Transient Thermal Impedance Junction-to-Case (25 C) are given for general guidelines only to enable the user to get a "ball park" indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70952. www.vishay.com 6 Document Number: 70952 S10-1745-Rev. A, 02-Aug-10 Package Information www.vishay.com Vishay Siliconix TO-252AA CASE OUTLINE E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 0.265 E 6.35 6.73 0.250 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347 Note * Dimension L3 is for reference only. Revision: 24-Dec-12 Document Number: 71197 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000