PZT222AT1 - Motorola / Freescale Semiconductor

MOTOROU

SEMICONDUCTOR TECHNICAL DATA Orderthis document

by P~2222AT1/D

NPN Siiicon Planar

Epitmia[ Transistor

This NPN Silicon Epitaxial transistor is designed for use in linear and

switching applications. The device is housed in the SOT-223 package which is .

●

☛

designed for medium power surface mount applications.

PNP Complement is PZT2907AT1

The SOT-223 package can be soldered using wave or reflow.

SOT-223 package ensures level mounting, resulting in improved thermal

PzT222aTl

MotorolaPrsferredDevlcs

conduction, and-allows visual inspection of soldered join~. The formed

leads absorb thermal str-s during soldering, eliminating the possibility of

damage to the die. ,

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Available in 12 mm tape and reel ,. ~

COLLECT@”~’::

Use PZT2222AT1 to order the 7inch/1000 unit reel. 2,4,’5?.<:”’:,$>

Use PZT2222AT3 to order the 13 inch/4000 unit reel. .,,;.+(.)<:+,.

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MAXIMUM RATINGS *;*’$.~.$,.,

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Rating :~$i ~>~:

*3:,x,$:?,,,~.~Symbol Value Unit

Coliector-EmitierVohage .,,.,.,.*J*

~S.,*3.,.,}\?~. VCEO 40 Vdc

.:p~,.~

Collector-Base Voltage ...,

>:$,.

>*. VCBO 75 Vdc

Emitier-Base Voltage (Open Collector) ,.t./>”+?i\..$

‘i.,. VEBO 6.0 Vdc

,;.

Collector Current .~~iL)

~,:$,:~h$$,,<,:.J$,., Ic 600

~$.\,,]\~.,\., mAdc

.,,

Total Power Dissipation up to TA =25”C(1),~,$l:~$.? pD 1.5 WaW

Storage Temperature Range ~... ,...

‘?::~:i;~,\.\

,\:$t\\x.,~,t\,

\;tw.\.i8L Tstg -65to+150 ‘c

Junction Temperature TJ 150 ‘c

THERMAL CHARACTERI

Thermal Resistance from R~A 83.3 “cm

Lead Temperature fofi$~~ng, 0.0625ti from case TL 260 “c

Time in Solder ~th ‘~t:l$: 10 Sec

DEVICE MAR@k$\$d

IP1 F,‘~?~it

J$!.. 1

ELECWl&@CHARACTERISTICS rA =25°C unless othem.se noted)

.,,,..,>+

\,: Characteristic ISymbol Min IMax Unit

+*,BHARACTERISTICS

.,.+,

‘~:;:*&ollector-Emitter Breakdown Voltage (Ic =10 mAdc, IB =O) V(BR)CEO 40 —Vdc

“(’ Collactor-BseeBreakdownVoltage(Ic =10@de, IE =O) V(BR)CBO 75 —Vdc

Emitter-Base Breakdown Voltage (IE =10 @de, IC=O) V(BR)EBO 6.0 —Vdc

Bas&Emitter Cutoff Current (VCE =60 Vdc,VBE=-3.0 Vdc) IBEX -20 nAdc

Collector-EmitterCutoffCurrent~cE =60 Vdc, VBE =-3.0 Vdc) iCEX —10 nAdc

Emitier-Base Cutoff Current WEB= 3.0 Vdc, Ic =O) lEBO —100 nAdc

1. Devicemountedon an SPCWw.ntadcircuitboard 1.575inchesx1.575inch= x0.059inch= mountingpadforthe collectorleadmin.0.93 inch*2.

Thermal Clad is atrsdemark of the Bergquist Company.

Preferred devicesare Motorola recommendedchoices forfuture use andbest overall value.

REV 2

@MOTOROLA

@Motorola, Inc. 1994

ELECTRICAL CHARACTERISTICS — continued UA=25°C unless othewise noted)

Characteristic Symbol IMin Max Unit

OFF CHARACTERISTICS (continued)

Collector-Base Cutoff Currant (VCB =60 Vdc, IE =O) iCBO —10 nAdc

(VCB =60 Vdc, IE =O,TA =125”C) —10 @dc

INCHARACTERISTICS

DC Current Gdn

(IC =0.1 mAdc, VCE =10 Vdc)

(IC =1.0 mAdc, VCE =10 Vdc)

(ic =10 mAdc, VCE =10 Vdc)

(1c=10 mAdc, VCE =10 Vdc, TA =-55°C)

(Ic =150 mAdc, VCE =10 Vdc)

(lc =150 mAdc, VCE =1.0 Vdc)

(1c=500 mAdc, VCE =10 Vdc)

Collector-Emitter Saturation Voltages

(Ic =150 mAdc, IB =15 mAdc)

(Ic =500 mAdc, IB =50 mAdc)

BaseEmitter Saturation Voltages

(Ic =150 mAdc, IB =15 mAdc)

(Ic =500 mAdc, IB =50 mAdc)

Input Impedance

(VCE=10 Vdc,IC=1.0mAdc,f=1.0kHz)

(VCE=10 Vdc, Ic =10 mAdc, f=1.0 kHz)

Voltage Feedback Ratio ed,$

(VCE =10 Vdc, IC =1.0 mAdc, f=1.0 kHz) ,,,~$;,.

,$,,!,.$:,!

(VCE=10 Vdc, IC =10 mAdc, f=1.0 kHz) ,.*,i,:,N\...

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Small-Signal Current Gain ~:

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(VCE=10 Vdc, IC =1.0 mAdc, f=1.0 kHz) >.> ~4~..

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$~i. $

(VCE=10 Vdc, Ic =10 mAdc, f=1.0 kHz) .~:,

O@ut Admittance

(VCE=10 Vdc, IC =1.0 mAdc, f=1.0 kHz) .+’,.

b+<,‘%’

(VCE=10 Vdc, Ic =10 mAdc, f=1.0 kHz) , ,,,

.$:s*\?,>?\,,,?\$

>,,,

Noise Figure NCE =10 Vdc, IC =100 @de, f=1.0=.,+’”

hFE

vCE(sat)

VBE(sat)

hOe

100

2.0

0.25

—

5.0

—

1.0

Vdc

1.2

2.0

kfi

8.0

1.25

—

8.OXI0~

4.OX1o~ —

300

375

~hos

200

4.0 IdB

DYNAMIC CHARACTERISTICS ,,:~.,>

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Current-Gain —BanMdth Product ,k::$~~$ ‘“ fT 300 —MHz

(Ic =20 mAdc, VCE =20 Vdc, f=100 ~z~

Output Capacitance (VCB =10 Vdc,#~$~~= 1.0 MHz) cc —8.0 pF

Input Capacitance (VEB =0.5 ~@~Y&:*ti, f=1.0 MHz) Ce —25 pF

.., .,!

SWITCHING TIMES WA= ~Q) “>1{$

DelayTime ~&’~~@~dc, Ic =150 mAdc, b – 10 ns

~@~&$e 15 ~dc, vEB(@ =0.5 Vdc)

RiseTime ,, ~:ime 1tr —25

Storage Ti~~ J~$cc =30 Vdc, Ic =150 mAdc, ts —225 ns

*lB(on) =lB(ofi =15 mAdc)

Fall ~~~~~~:’ Figure 2tf —60

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2Motorola Smal14ignaI Transistors, FHs and Diodes Device Data

—— ————— —

o———— ——

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PZT2222AT1

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Motorola Small-Signal Transistors, F=s and Diodes Device Data 3

PzT222mTl

INFORMATION FOR USING THE SOT-223 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is acritical portion of the total interface between the board and the package. With the

design. The footprint for the semiconductor packages must correct pad geometry, the packages will self align when

be the correct size to insure proper solder connection subjected to asolder reflow process.

The power dissipation of the SOT-223 is afunction of the

collector pad size. This can vary from the minimum pad siz~

for soldering to a pad size given for maximum PO:8X:,

dissipation. Power dissipation for asurface mount de~$~~s ““

determined byTJ(m=), the maximum ratedjuncfio~~m~ra-

ture of the die, ReJA, the thermal resistance froql~~~ce

junction to ambient, and the operating te@}@’~e, TA.

Using the values provided on the data sheef~~~~SOT-223

package, PD can be calculated as follg~s.’$.,.,#

.~+i

~...

The values for the equafim+~~& found in the maximum

ratings table on the data ~~et. Sfibsfituting these values into

the equation for an am~~~$aperature TA of 25°C, one can

calculate the pow~,’)tipafion of the device which in this

,,,-$s.?:, ,t, .$,

~~ough one can almost double the power dissipation with

~’this method, one will be giving up area on the printed circuit

board which can defeat the purpose of using surface mount

technology. Agraph of RgJA versus collecfor pad area is

shown in Figure 3.

160

-s I

EBoardMaterial=0,0625” TA=25°C

~- 140 G-1OFR4, 2ozGopper

si.8 W&

# 2120

E: \ ,

.- 1.5Watts

a~loo

a= ‘Mountedonthe DPAKfootprint

$:P~= 150°C -25°C =,s Watis 0.0 0.2 0.4 0.6 0.8 1.0

~:\>:.\\\,\,‘\,\,*\t\: 83.3°CN .A,Area(squareinches)

Ntf,A,,

..’7,,~,~,wt~

Th~~,:~CN for the SOT-223 package assumes the use Figure 3. Thermal Resistance versus Collector

of tha$~dommended footprint on a glass epoxy printed Pad Area for the SOT-223 Packge ~ypical)

circuif ‘board to achieve apower dissipation of 1.5 wafts. Another alternative would be to use aceramic substrate or

There are other alternatives to achieving higher power an aluminum core board such as Thermal CladTM.Using a

dissipation from the SOT-223 package. One is to increase board material such as Thermal Clad, an aluminum core

the area of the collector pad. By increasing the area of the board, the power dssipafion can be doubled using the same

collector pad, the power dissipation can be increased. footprint.

4Motorola Small-Signal Transistors, FETsand Diodes Device Data

PZT2222AT1

SOLDER STENCIL GUIDELINES

Prior to placing surface mount components onto aprinted or stainless steel with atypical thickness of 0.008 inches.

circuit board, solder paste must be applied to the pads. A The stencil opening size for the SOT-223 package should be

solder stencil is rquired to screen the optimum amount of the same as the pad size on the printed circuit board, i.e., a

solder paste onto the footprint. The stencil is made of brass 1:1 registration.

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the rated o

temperature of the device. When the entire device is heated

to ahigh temperature, failure to complete soldering within a.

short time could result in device failure. Therefore, the

following items should always be observed in order to .

minimize the thermal stress to which the devices are

subjected.

●Always preheat the device.

. The delta temperature between the preheat and soldering

should be 100”C or less.’ e

.When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum

temperature ratings as shown on the data sheet. When *

The soldering temperature and time shall n~t, exceed

260°C for more than 10 seconds. ,,,,,,:<>,

.,’>.,.,>st,:.,,

When shifting from preheating to solderin&$:&maximum

temperature gradient shall be 5°C or l~;;$x:,$

After soldering has been compieted.~~~~vice should be

allowed to cool naturally for ,@,:~@@three minutes.

Gradual cooling should be qS:~;~ the use of forced

cooling will increase the te~e~ure gradient and result

in latent failure due to m~afi~l stress.

Mechanical stress or S*@hould not be applied during

~~i$,;$+

cooling *:*>,,..,

~i:$i.~>

..:,.-.,,i:. t::.>

Soldering ade@i~X~out preheating can cause excessive

using infrared heating with the reflow soldering method, thermal shocb@nd’’&ess which can r=sult in damage to the

the difference shall be a maximum of 10°C. device. ~{~,..

>*,:*,,$st~~~

..<i>

,*...~:~q.},

WPICAL SOLDER HEATl~$;kdFiLE

.~,\\,,<

Forany given circuit board, there will be a group of control .wual~Perature that might be experienced on the surface

settings that will give the desired heat pattern. The operator ..$,l~~%~testboard at or near acentral solder ioint. The two

must set temperatures for several heating zones, and a {~~ofilesare based on a high density and a low density board.

figure for belt speed. Taken together, these control setiin~S~5~~he Wtronics SMD31oconvectionfinfrared reflow soldering

make up a heating “profile” for that particular circuit boards,;’’””

On machines controlled by acomputer, the compu~er ‘system was used to generate this profile. The type of solder

remembers these profiles from one operating ses$@ to the used was 62/36/2 Tin Lead Silver with amelting point

next. figure 4shows atypical heating profile fq.Vd~?~when between 1~-l 89°C. When this type of furnace is used for

soldering asurface mount device to apfintq&q@ board. solder reflow work, the circuit boards and solder ioints tend to

This profile will vary among soldering syste~$,~u~%is a good heat first. The components on the board are then heated by

starting point. Factors that can affect th&~Ywinclude the conduction. The circuit board, because it has alarge surface

type of soldering system in use,,$w$~~ and types of area, absorbs the thermal energy more efficiently, then

components on the board, type of~l~hsed, and the type distributes this energy to the components. Because of this

of board or substrate material h@q,%ed. This profile shows effect, the main body of acomponent may be up to 30

temperature versus time. T@,,~@r@nthe graph shows the degrees cooler than the adiacent solder ioints.

.Y;,,::

1500c t$

1Oooc 1400c

DESIREDCURVEFOR LOW

MASSASSEMBLIES

‘k

JUINT

SOLDER ISLIQUIDFOR

40TO 80 SECONDS

(DEPENDINGON

MASSOFASSEMBLY)

I I I11

‘TIME (3TO 7MINUTESTOTAL)

IIII

-TM~

Figure 4. Typical Solder Heating Profile

Motorola Small-gnal Transistors, F~s and Diodes Device Data 5

Iefi blank.

intentionally Iefi blank.

CASE 318E44

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herightto makechangestithomfutiher no~ceto anyPmu~sherein. Motorola m*es now~nv, repr=enta~on or9uara~ee re9ar~n9

~of its products for any particular purpose, nor does Motorola assumeany titi~~ arising out of the apphcation or use of any product or circuit,

Iaimsany andalltisbitity,including without Mmitationconsequential orincidentaldamages. ‘TypiW parameterscanand do varyindifferent

rating pe~meters, including‘Typicals” must be validated for eachcustomerapplication bycustomer’s technical experts. Motorola does

under rtspatent rightsnor the rights of others. Motorola pducts are not designed, intended, or authorized for use as components in

,~>,~temsintendedforsurgiwl implatiintothe bdy, orotierqpfi@tions intended tosu~otiorsuSain hfe,or foranyotherappti@ion inwMchthefailureof

‘“ ~~WeMotorola produti muldcreate asituation where personal injuyor death maymur. Should Buyer purchase oruse Motorola produtisfor any such

./ ~.

,. unintended orunatihorizd @pfimtion, BuyershdlindemniVmd hold Motorolaandtisofiwrs, employe=, subsidwi*, atitiat=, anddWributorshaml=s

,: against all claims, costs, damages, and expenses, and r=sonable attorney fess arising out of, directly or indirectly, any claim of personal injury or death

associatedwith such unintended orunauthorizeduse, even if such claim alleges that Motorolawas neg~gentregardingthe design or manufacture ofthe part.

Motorola and @are register~ trademarksof Motorola, lnC.Motorola, Inc. is an Equal Opportuni~/Affirmative Action Employer.

Literature Dlatrtbution Centeffi

USA Motorola Literature Distibutiow P.O.Box2091% Phoenix,Atizona 85036.

EUROPE Motorola Ltd; European Lite@Ufe Osntr%88 TannersDrive, Blskelands, Milton Keynes, MK145BP,England.

JAPAN: Nippon Motorola Ltd: W2-1, Nishi=otenda, Shinagawa-ku, Tokyo141, Japan.

ASIA PACIFIC: Motorola Semicondu@orsH.K. Ltd.;SihCOnHarbour Center, No. 2Dai King Street, Tai Po Industrial Estate, Tai Po, N.T.,Hong Kong.

@M~R-A ‘. .’ Pm2222AT1/D

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