STGW8M120DF3, STGWA8M120DF3 Trench gate field-stop IGBT, M series 1200 V, 8 A low-loss Datasheet - production data Features 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 8 A Tight parameter distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Industrial drives UPS Solar Welding Figure 1: Internal schematic diagram Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Table 1: Device summary Order code STGW8M120DF3 STGWA8M120DF3 September 2016 Marking G8M120DF3 DocID029337 Rev 2 This is information on a product in full production. Package TO-247 TO-247 long leads Packing Tube 1/18 www.st.com Contents STGW8M120DF3, STGWA8M120DF3 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 7 3 Test circuits ................................................................................... 12 4 Package information ..................................................................... 13 5 2/18 4.1 TO-247 package information ........................................................... 13 4.2 TO-247 long leads package information ......................................... 15 Revision history ............................................................................ 17 DocID029337 Rev 2 STGW8M120DF3, STGWA8M120DF3 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol VCES Parameter Collector-emitter voltage (VGE = 0 V) Value Unit 1200 V IC Continuous collector current at TC = 25 C 16 A IC Continuous collector current at TC = 100 C 8 A ICP(1) Pulsed collector current 32 A VGE Gate-emitter voltage 20 V IF Continuous forward current at TC = 25 C 16 A IF Continuous forward current at TC = 100 C 8 A IFP(1) Pulsed forward current 32 A PTOT Total dissipation at TC = 25 C 167 W TSTG Storage temperature range - 55 to 150 C Operating junction temperature range - 55 to 175 C Value Unit TJ Notes: (1)Pulse width limited by maximum junction temperature. Table 3: Thermal data Symbol Parameter RthJC Thermal resistance junction-case IGBT 0.9 C/W RthJC Thermal resistance junction-case diode 1.47 C/W RthJA Thermal resistance junction-ambient 50 C/W DocID029337 Rev 2 3/18 Electrical characteristics 2 STGW8M120DF3, STGWA8M120DF3 Electrical characteristics TC = 25 C unless otherwise specified Table 4: Static characteristics Symbol Parameter V(BR)CES Collector-emitter breakdown voltage VCE(sat) VF Test conditions Collector-emitter saturation voltage Forward on-voltage VGE = 0 V, IC = 2 mA Min. Typ. 1200 1.85 VGE = 15 V, IC = 8 A, TJ = 125 C 2.1 VGE = 15 V, IC = 8 A, TJ = 175 C 2.2 IF = 8 A 2.4 IF = 8 A, TJ = 125 C 1.75 IF = 8 A, TJ = 175 C 1.55 Gate threshold voltage VCE = VGE, IC = 500 A ICES Collector cut-off current VCE = 1200 V IGES Gate-emitter leakage current VGE = 20 V 5 Unit V VGE = 15 V, IC = 8 A VGE(th) Max. 6 2.3 V 3.35 V 7 V 25 A 250 A Unit Table 5: Dynamic characteristics Symbol 4/18 Parameter Test conditions Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge VCE = 25 V, f = 1 MHz, VGE = 0 V VCC = 960 V, IC = 8 A, VGE = 15 V (see Figure 30: " Gate charge test circuit") DocID029337 Rev 2 Min. Typ. Max. - 542 - - 74.4 - - 21 - - 32 - - 4.5 - - 18.5 - pF nC STGW8M120DF3, STGWA8M120DF3 Electrical characteristics Table 6: IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Parameter Test conditions Typ. Max. Unit Turn-on delay time 20 - ns Current rise time 8.4 - ns 800 - A/s 126 - ns 136 - ns 0.39 - mJ Turn-on current slope Turn-off-delay time Current fall time Min. VCE = 600 V, IC = 8 A, VGE = 15 V, RG = 33 (see Figure 29: " Test circuit for inductive load switching" ) Eon(1) Turn-on switching energy (2) Turn-off switching energy 0.37 - mJ Total switching energy 0.76 - mJ 19 - ns 9.8 - ns 656 - A/s 134 - ns 222 - ns 0.66 - mJ Eoff Ets td(on) tr Turn-on delay time Current rise time (di/dt)on td(off) tf Turn-on current slope Turn-off-delay time Current fall time (1) Turn-on switching energy Eoff(2) Eon VCE = 600 V, IC = 8 A, VGE = 15 V, RG = 33 TJ = 175 C (see Figure 29: " Test circuit for inductive load switching" ) Turn-off switching energy 0.58 - mJ Ets Total switching energy 1.24 - mJ tsc Short-circuit withstand time - s VCC 600 V, VGE = 15 V, TJstart 150 C 10 Notes: (1)Including the reverse recovery of the diode. (2)Including the tail of the collector current. DocID029337 Rev 2 5/18 Electrical characteristics STGW8M120DF3, STGWA8M120DF3 Table 7: Diode switching characteristics (inductive load) 6/18 Symbol Parameter trr Test conditions Min. Typ. Max. Unit Reverse recovery time - 103 - ns Qrr Reverse recovery charge - 0.87 - C Irrm Reverse recovery current - 19.2 - A dIrr/dt Peak rate of fall of reverse recovery current during tb - 720 - A/s Err Reverse recovery energy - 211 - J trr Reverse recovery time - 280 - ns Qrr Reverse recovery charge - 1.9 - C Irrm Reverse recovery current - 21.8 - A dIrr/dt Peak rate of fall of reverse recovery current during tb - 450 - A/s Err Reverse recovery energy - 404 - J IF = 8 A, VR = 600 V, VGE = 15 V, RG = 33 ( di/dt = 1000 A/s) (see Figure 29: " Test circuit for inductive load switching") IF = 8 A, VR = 600 V, VGE = 15 V, TJ = 175 C, RG = 33 (di/dt = 840 A/s) (see Figure 29: " Test circuit for inductive load switching") DocID029337 Rev 2 STGW8M120DF3, STGWA8M120DF3 2.1 Electrical characteristics Electrical characteristics (curves) Figure 2: Power dissipation vs. case temperature Figure 3: Collector current vs. case temperature Figure 4: Output characteristics (TJ = 25 C) Figure 5: Output characteristics (TJ = 175 C) Figure 6: VCE(sat) vs. junction temperature Figure 7: VCE(sat) vs. collector current DocID029337 Rev 2 7/18 Electrical characteristics STGW8M120DF3, STGWA8M120DF3 Figure 8: Collector current vs. switching frequency Figure 9: Forward bias safe operating area Figure 10: Transfer characteristics Figure 11: Diode VF vs. forward current Figure 12: Normalized VGE(th) vs. junction temperature Figure 13: Normalized V(BR)CES vs. junction temperature 8/18 DocID029337 Rev 2 STGW8M120DF3, STGWA8M120DF3 Electrical characteristics Figure 14: Capacitance variations Figure 15: Gate charge vs. gate-emitter voltage Figure 16: Switching energy vs. collector current Figure 17: Switching energy vs. gate resistance Figure 18: Switching energy vs. temperature Figure 19: Switching energy vs. collector emitter voltage DocID029337 Rev 2 9/18 Electrical characteristics STGW8M120DF3, STGWA8M120DF3 Figure 20: Short-circuit time and current vs. VGE Figure 21: Switching times vs. collector current Figure 22: Switching times vs. gate resistance Figure 23: Reverse recovery current vs. diode current slope Figure 24: Reverse recovery time vs. diode current slope Figure 25: Reverse recovery charge vs. diode current slope 10/18 DocID029337 Rev 2 STGW8M120DF3, STGWA8M120DF3 Electrical characteristics Figure 26: Reverse recovery energy vs. diode current slope Figure 27: Thermal impedance for IGBT ZthTO2T_B K =0.5 0.2 0.1 10 0.05 -1 0.02 Zth=k Rthj-c =tp/t 0.01 Single pulse tp t -2 10 -5 10 10 -4 10 -3 10 -2 10 -1 tp (s) Figure 28: Thermal impedance for diode CG20930 K = 0.5 = 0.2 = 0.1 -1 10 Z Zthth == kk R Rthj-C thj-C == ttp // p = 0.05 = 0.02 = 0.01 tp SINGLE PULSE -2 10 10-5 10-4 10-3 10-2 DocID029337 Rev 2 10-1 tp(s) 11/18 Test circuits 3 STGW8M120DF3, STGWA8M120DF3 Test circuits Figure 29: Test circuit for inductive load switching Figure 30: Gate charge test circuit C A A L=100 H G E B B 3.3 F C G + RG VCC 1000 F D.U.T E - AM01504v 1 Figure 31: Switching waveform 12/18 DocID029337 Rev 2 Figure 32: Diode reverse recovery waveform STGW8M120DF3, STGWA8M120DF3 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK (R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. 4.1 TO-247 package information Figure 33: TO-247 package outline DocID029337 Rev 2 13/18 Package information STGW8M120DF3, STGWA8M120DF3 Table 8: TO-247 package mechanical data mm Dim. Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 14/18 Typ. 5.45 5.60 18.50 OP 3.55 OR 4.50 S 5.30 DocID029337 Rev 2 3.65 5.50 5.50 5.70 STGW8M120DF3, STGWA8M120DF3 4.2 Package information TO-247 long leads package information Figure 34: TO-247 long lead package outline DocID029337 Rev 2 15/18 Package information STGW8M120DF3, STGWA8M120DF3 Table 9: TO-247 long lead package mechanical data mm Dim. Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 1.26 b2 3.25 b3 2.25 c 0.59 0.66 D 20.90 21.00 21.10 E 15.70 15.80 15.90 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 5.34 5.44 5.54 L 19.80 19.92 20.10 P 3.50 3.60 Q 5.60 S 6.05 L1 16/18 4.30 DocID029337 Rev 2 3.70 6.00 6.15 6.25 STGW8M120DF3, STGWA8M120DF3 5 Revision history Revision history Table 10: Document revision history Date Revision 11-May-2016 1 First release. 2 Datasheet promoted from preliminary to production data. Updated Table 2: "Absolute maximum ratings". Updated Section 2: "Electrical characteristics". Added Section 2.1: "Electrical characteristics (curves)". 19-Sep-2016 Changes DocID029337 Rev 2 17/18 STGW8M120DF3, STGWA8M120DF3 IMPORTANT NOTICE - PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST's terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers' products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. (c) 2016 STMicroelectronics - All rights reserved 18/18 DocID029337 Rev 2