September 2016
DocID029337 Rev 2
1/18
This is information on a product in full production.
www.st.com
STGW8M120DF3,
STGWA8M120DF3
Trench gate field-stop IGBT, M series 1200 V, 8 A low-loss
Datasheet - production data
Figure 1: Internal schematic diagram
Features
10 µs of short-circuit withstand time
VCE(sat) = 1.85 V (typ.) @ IC = 8 A
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
Applications
Industrial drives
UPS
Solar
Welding
Description
These devices are IGBTs developed using an
advanced proprietary trench gate field-stop
structure. These devices are part of the M series
IGBTs, which represent an optimal balance
between inverter system performance and
efficiency where low-loss and short-circuit
functionality are essential. Furthermore, the
positive VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Table 1: Device summary
Order code
Marking
Package
Packing
STGW8M120DF3
G8M120DF3
TO-247
Tube
STGWA8M120DF3
TO-247 long leads
Contents
STGW8M120DF3, STGWA8M120DF3
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DocID029337 Rev 2
Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves) ...................................................... 7
3 Test circuits ................................................................................... 12
4 Package information ..................................................................... 13
4.1 TO-247 package information ........................................................... 13
4.2 TO-247 long leads package information ......................................... 15
5 Revision history ............................................................................ 17
STGW8M120DF3, STGWA8M120DF3
Electrical ratings
DocID029337 Rev 2
3/18
1 Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCES
Collector-emitter voltage (VGE = 0 V)
1200
V
IC
Continuous collector current at TC = 25 °C
16
A
IC
Continuous collector current at TC = 100 °C
8
A
ICP(1)
Pulsed collector current
32
A
VGE
Gate-emitter voltage
±20
V
IF
Continuous forward current at TC = 25 °C
16
A
IF
Continuous forward current at TC = 100 °C
8
A
IFP(1)
Pulsed forward current
32
A
PTOT
Total dissipation at TC = 25 °C
167
W
TSTG
Storage temperature range
- 55 to 150
°C
TJ
Operating junction temperature range
- 55 to 175
°C
Notes:
(1)Pulse width limited by maximum junction temperature.
Table 3: Thermal data
Symbol
Parameter
Value
Unit
RthJC
Thermal resistance junction-case IGBT
0.9
°C/W
RthJC
Thermal resistance junction-case diode
1.47
°C/W
RthJA
Thermal resistance junction-ambient
50
°C/W
Electrical characteristics
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2 Electrical characteristics
TC = 25 °C unless otherwise specified
Table 4: Static characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)CES
Collector-emitter breakdown
voltage
VGE = 0 V, IC = 2 mA
1200
V
VCE(sat)
Collector-emitter saturation
voltage
VGE = 15 V, IC = 8 A
1.85
2.3
V
VGE = 15 V, IC = 8 A,
TJ = 125 °C
2.1
VGE = 15 V, IC = 8 A,
TJ = 175 °C
2.2
VF
Forward on-voltage
IF = 8 A
2.4
3.35
V
IF = 8 A, TJ = 125 °C
1.75
IF = 8 A, TJ = 175 °C
1.55
VGE(th)
Gate threshold voltage
VCE = VGE, IC = 500 µA
5
6
7
V
ICES
Collector cut-off current
VCE = 1200 V
25
µA
IGES
Gate-emitter leakage
current
VGE = ± 20 V
±250
µA
Table 5: Dynamic characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Cies
Input capacitance
VCE = 25 V, f = 1 MHz,
VGE = 0 V
-
542
-
pF
Coes
Output capacitance
-
74.4
-
Cres
Reverse transfer
capacitance
-
21
-
Qg
Total gate charge
VCC = 960 V, IC = 8 A,
VGE = 15 V (see Figure 30: "
Gate charge test circuit")
-
32
-
nC
Qge
Gate-emitter charge
-
4.5
-
Qgc
Gate-collector charge
-
18.5
-
STGW8M120DF3, STGWA8M120DF3
Electrical characteristics
DocID029337 Rev 2
5/18
Table 6: IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VCE = 600 V, IC = 8 A,
VGE = 15 V, RG = 33 Ω
(see Figure 29: " Test circuit
for inductive load switching" )
20
-
ns
tr
Current rise time
8.4
-
ns
(di/dt)on
Turn-on current slope
800
-
A/µs
td(off)
Turn-off-delay time
126
-
ns
tf
Current fall time
136
-
ns
Eon(1)
Turn-on switching energy
0.39
-
mJ
Eoff(2)
Turn-off switching energy
0.37
-
mJ
Ets
Total switching energy
0.76
-
mJ
td(on)
Turn-on delay time
VCE = 600 V, IC = 8 A,
VGE = 15 V, RG = 33 Ω
TJ = 175 °C (see Figure 29: "
Test circuit for inductive load
switching" )
19
-
ns
tr
Current rise time
9.8
-
ns
(di/dt)on
Turn-on current slope
656
-
A/µs
td(off)
Turn-off-delay time
134
-
ns
tf
Current fall time
222
-
ns
Eon(1)
Turn-on switching energy
0.66
-
mJ
Eoff(2)
Turn-off switching energy
0.58
-
mJ
Ets
Total switching energy
1.24
-
mJ
tsc
Short-circuit withstand time
VCC ≤ 600 V, VGE = 15 V,
TJstart ≤ 150 °C
10
-
µs
Notes:
(1)Including the reverse recovery of the diode.
(2)Including the tail of the collector current.
Electrical characteristics
STGW8M120DF3, STGWA8M120DF3
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DocID029337 Rev 2
Table 7: Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery time
IF = 8 A, VR = 600 V, VGE = 15 V,
RG = 33 Ω ( di/dt = 1000 A/µs)
(see Figure 29: " Test circuit for
inductive load switching")
-
103
-
ns
Qrr
Reverse recovery
charge
-
0.87
-
µC
Irrm
Reverse recovery
current
-
19.2
-
A
dIrr/dt
Peak rate of fall of
reverse recovery
current during tb
-
720
-
A/µs
Err
Reverse recovery
energy
-
211
-
µJ
trr
Reverse recovery time
IF = 8 A, VR = 600 V, VGE = 15 V,
TJ = 175 °C, RG = 33 Ω
(di/dt = 840 A/µs) (see Figure 29: "
Test circuit for inductive load
switching")
-
280
-
ns
Qrr
Reverse recovery
charge
-
1.9
-
µC
Irrm
Reverse recovery
current
-
21.8
-
A
dIrr/dt
Peak rate of fall of
reverse recovery
current during tb
-
450
-
A/µs
Err
Reverse recovery
energy
-
404
-
µJ
STGW8M120DF3, STGWA8M120DF3
Electrical characteristics
DocID029337 Rev 2
7/18
2.1 Electrical characteristics (curves)
Figure 2: Power dissipation vs. case temperature
Figure 3: Collector current vs. case temperature
Figure 4: Output characteristics (TJ = 25 °C)
Figure 5: Output characteristics (TJ = 175 °C)
Figure 6: VCE(sat) vs. junction temperature
Figure 7: VCE(sat) vs. collector current
Electrical characteristics
STGW8M120DF3, STGWA8M120DF3
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Figure 8: Collector current vs. switching frequency
Figure 9: Forward bias safe operating area
Figure 10: Transfer characteristics
Figure 11: Diode VF vs. forward current
Figure 12: Normalized VGE(th) vs. junction
temperature
Figure 13: Normalized V(BR)CES vs. junction
temperature
STGW8M120DF3, STGWA8M120DF3
Electrical characteristics
DocID029337 Rev 2
9/18
Figure 14: Capacitance variations
Figure 15: Gate charge vs. gate-emitter voltage
Figure 16: Switching energy vs. collector current
Figure 17: Switching energy vs. gate resistance
Figure 18: Switching energy vs. temperature
Figure 19: Switching energy vs. collector emitter
voltage
Electrical characteristics
STGW8M120DF3, STGWA8M120DF3
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DocID029337 Rev 2
Figure 20: Short-circuit time and current vs. VGE
Figure 21: Switching times vs. collector current
Figure 22: Switching times vs. gate resistance
Figure 23: Reverse recovery current vs. diode
current slope
Figure 24: Reverse recovery time vs. diode current
slope
Figure 25: Reverse recovery charge vs. diode
current slope
STGW8M120DF3, STGWA8M120DF3
Electrical characteristics
DocID029337 Rev 2
11/18
10-5 10-4 10-3 10-2 10-1 tp(s)
10-2
10-1
K
0.2
0.05
0.02
0.01
0.1
Zth=k Rthj-c
δ=tp/t
tp
t
Single pulse
δ=0.5
ZthTO2T_B
CG20930
tp
Zth = k Rthj-C
δ = tp/Ƭ
10-5 10-4 10-3 10-2
10-2
10-1
K
10-1 tp(s)
Ƭ
δ = 0.5
δ = 0.2
δ = 0.1
δ = 0.01
δ = 0.02
δ = 0.05
SINGLE PULSE
Zth = k Rthj-C
δ = tp/Ƭ
tpƬ
Figure 26: Reverse recovery energy vs. diode current slope
Figure 27: Thermal impedance for IGBT
Figure 28: Thermal impedance for diode
Test circuits
STGW8M120DF3, STGWA8M120DF3
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DocID029337 Rev 2
3 Test circuits
Figure 29: Test circuit for inductive load
switching
Figure 30: Gate charge test circuit
Figure 31: Switching waveform
Figure 32: Diode reverse recovery waveform
A A
C
E
G
B
RG
+
-
G
C3.3
µF 1000
µF
L=100 µH
VCC
E
D.U.T
B
AM01504v1
STGW8M120DF3, STGWA8M120DF3
Package information
DocID029337 Rev 2
13/18
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
4.1 TO-247 package information
Figure 33: TO-247 package outline
Package information
STGW8M120DF3, STGWA8M120DF3
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DocID029337 Rev 2
Table 8: TO-247 package mechanical data
Dim.
mm
Min.
Typ.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
5.45
5.60
L
14.20
14.80
L1
3.70
4.30
L2
18.50
ØP
3.55
3.65
ØR
4.50
5.50
S
5.30
5.50
5.70
STGW8M120DF3, STGWA8M120DF3
Package information
DocID029337 Rev 2
15/18
4.2 TO-247 long leads package information
Figure 34: TO-247 long lead package outline
Package information
STGW8M120DF3, STGWA8M120DF3
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DocID029337 Rev 2
Table 9: TO-247 long lead package mechanical data
Dim.
mm
Min.
Typ.
Max.
A
4.90
5.00
5.10
A1
2.31
2.41
2.51
A2
1.90
2.00
2.10
b
1.16
1.26
b2
3.25
b3
2.25
c
0.59
0.66
D
20.90
21.00
21.10
E
15.70
15.80
15.90
E2
4.90
5.00
5.10
E3
2.40
2.50
2.60
e
5.34
5.44
5.54
L
19.80
19.92
20.10
L1
4.30
P
3.50
3.60
3.70
Q
5.60
6.00
S
6.05
6.15
6.25
STGW8M120DF3, STGWA8M120DF3
Revision history
DocID029337 Rev 2
17/18
5 Revision history
Table 10: Document revision history
Date
Revision
Changes
11-May-2016
1
First release.
19-Sep-2016
2
Datasheet promoted from preliminary to production data.
Updated Table 2: "Absolute maximum ratings".
Updated Section 2: "Electrical characteristics".
Added Section 2.1: "Electrical characteristics (curves)".
STGW8M120DF3, STGWA8M120DF3
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DocID029337 Rev 2
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