2SK3703
No.7681-1/7
Features
• ON-resistance RDS(on)1=20mΩ (typ.) • Input capacitance Ciss=1780pF (typ.)
• 4V drive
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 60 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID30 A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 120 A
Allowable Power Dissipation PD2.0 W
Tc=25°C
25 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Energy (Single Pulse) *1 EAS 135 mJ
Avalanche Current *2 IAV 30 A
Note :
*1 VDD=20V, L=200μH, IAV=30A (Fig.1)
*2 L≤200μH, Single pulse
Package Dimensions
unit : mm (typ)
7529-001
51612 TKIM TC-00002747/72506QA MSIM TC-00000067/61504 TSIM TA-100813
SANYO Semiconductors
DATA SHEET
2SK3703
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
Ordering number : EN7681B
Product & Package Information
• Package : TO-220F-3SG
• JEITA, JEDEC : SC-67
•
Minimum Packing Quantity
: 50 pcs./magazine
Marking
Electrical Connection
K3703
LOT No. 1
3
2
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220F-3SG
10.16
0.8
15.8712.98
3.3
6.68
3.23
1.47 MAX
15.8
4.7 2.54
2.76
123 0.5
2.54 2.54
3.18
( 1.0)
(0.84)
DETAIL-A
A
EMC
FRAME
2SK3703-1E
2SK3703
No.7681-2/7
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 60 V
Zero-Gate Voltage Drain Current IDSS V
DS=60V, VGS=0V 1μA
Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V
Forward T ransfer Admittance | yfs |VDS=10V, ID=15A13 22 S
Static Drain-to-Source On-State Resistance
RDS(on)1 ID=15A, VGS=10V 20 26 mΩ
RDS(on)2 ID=15A, VGS=4V 28 40 mΩ
Input Capacitance Ciss VDS=20V, f=1MHz 1780 pF
Output Capacitance Coss 266 pF
Reverse Transfer Capacitance Crss 197 pF
Turn-ON Delay Time td(on)
See Fig.2
16.5 ns
Rise Time tr 110 ns
Turn-OFF Delay Time td(off) 166 ns
Fall Time tf144 ns
Total Gate Charge Qg VDS=30V, VGS=10V, ID=30A 40 nC
Gate-to-Source Charge Qgs 6.5 nC
Gate-to-Drain “Miller” Charge Qgd 11.5 nC
Diode Forward Voltage VSD IS=30A, VGS=0V 1.0 1.2 V
Fig.1 Avalanche Resistance Test Circuit Fig.2 Switching Time Test Circuit
Ordering Information
Device Package Shipping memo
2SK3703-1E TO-220F-3SG 50pcs./magazine Pb Free
50Ω
10V
0V
≥50Ω
VD
D
L
2SK3703 PW=10μs
D.C.≤1%
P.G 50Ω
G
S
D
ID=15A
RL=2Ω
VDD=30V
VOU
T
2SK3703
VIN
10V
0V
VIN
2SK3703
No.7681-3/7
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V IT05388
0
70
60
50
40
30
10
20
2345678910
RDS(on) -- Tc
Case Temperature, Tc -- °CIT05389
0
60
50
40
30
20
10
--50 --25 0 25 50 75 100 125 150
--25°C
25°C
Tc=75
°
C
ID=15A
ID=15A, VGS=4V
ID=15A, VGS=10V
Static-Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static-Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
| yfs | -- ID
Forward T ransfer Admittance, | yfs | -- S
Drain Current, ID -- A IT05390
IS -- VSD
Source Current, IS -- A
Diode Forward Voltage, VSD -- V IT05391
100
2
3
5
7
3
5
7
10
5
7
1.0
2
0.1 1.0
23 57 23 57 23
10 5 0 0.3 0.6 0.9 1.2
0.001
0.01
2
3
5
7
0.1
2
3
5
7
1.0
2
3
5
7
10
2
3
5
7
2
3
5
Tc= --25°C
75°C
Ciss, Coss, Crss -- VDS
Ciss, Coss, Crss -- pF
Drain-to-Source Voltage, VDS -- V IT05393
SW Time -- ID
Drain Current, ID -- A
Switching Time, SW Time -- ns
IT05392
10
7
2
2
3
5
100
5
3
7532 101.00.1 5327532
tr
tf
td(on)
td(off)
VDD=30V
VGS=10V
VGS=0V
Tc=75
°
C
25°C
--25°C
1000
100
2
3
5
7
7
2
3
5
0 5 10 15 20 25 30
Crss
Coss
Ciss
f=1MHz
25°C
ID -- VDS
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V IT05386
0
50
45
40
35
30
25
20
15
10
5
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 2.01.6 1.8
ID -- VGS
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V IT05387
0
50
45
40
35
30
25
20
15
10
5
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 5.04.0 4.5
Tc=25°C
Tc= --25°C
--25°C
Tc=75°C
75°C
25
°
C
25°C
VGS=3V
4V
6V
8V
10V
VDS=10V
2SK3703
No.7681-4/7
Case Temperature, Tc -- °C
PD -- Tc
Allowable Power Dissipation, PD -- W
IT05396
0 20 40 60 80 100 120 140 160
0
35
30
25
20
15
10
5
Ambient Temperature, Ta -- °C
PD -- Ta
Allowable Power Dissipation, PD -- W
IT05397
0 20 40 60 80 100 120 140 160
0
0.5
1.0
1.5
2.0
2.5
0
025 50 75 100 125 150
100
80
60
20
40
120
175
EAS -- Ta
Avalanche Energy derating factor -- %
IT10478
Ambient Temperature, Ta -- °C
VGS -- Qg
Gate-to-Source Voltage, VGS -- V
Total Gate Charge, Qg -- nC IT05394
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30 35 40
VDS=30V
ID=30A
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
IT16832
A S O
0.1
2
3
5
5
7
2
3
7
2
3
1.0
10
100
1000
5
7
3
5
7
2
23 5723 57 23 57
0.1 1.0 10 100
ID=30A
Operatuon in this
area is limited by RDS(on).
Tc=25°C
Single pulse
10
μ
s
100μs
1ms
100ms
10ms
DC operation
IDP=120A(PW≤10μs)
2SK3703
No.7681-5/7
Magazine Specifi cation
2SK3703-1E
2SK3703
No.7681-6/7
Outline Drawing
2SK3703-1E
Mass (g) Unit
1.8
* For reference
mm
2SK3703
PS No.7681-7/7
This catalog provides information as of May, 2012. Specifi cations and information herein are subject
to change without notice.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
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grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
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Note on usage : Since the 2SK3703 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
