Ordering number : ENN6959 2SK3491 N-Channel Silicon MOSFET 2SK3491 Ultrahigh-Speed Switching Applications Features Low ON-resistance. Low Qg. unit : mm 2083B [2SK3491] 2.3 0.5 7.0 5.5 1.5 6.5 5.0 4 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 1 : Gate 2 : Drain 3 : Source 4 : Drain 3 2.3 2.3 SANYO : TP Package Dimensions unit : mm 2092B [2SK3491] 6.5 5.0 4 0.5 0.5 0.85 1 0.6 2.3 2 1.2 7.0 5.5 1.5 2.3 2.5 * Package Dimensions 0.8 * 3 1.2 0 to 0.2 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA 2.3 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52101 TS IM TA-3255 No.6959-1/4 2SK3491 Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 600 V Gate-to-Source Voltage VGSS 30 V ID 1.0 A 4.0 A Drain Current (DC) Drain Current (Pulse) IDP Allowable Power Dissipation PD PW10s, duty cycle1% Tc=25C 1.0 W 20 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Ratings Conditions min V(BR)DSS IDSS ID=1mA, VGS=0 VDS=600V, VGS=0 IGSS VGS(off) VGS=30V, VDS=0 VDS=10V, ID=1mA 2.5 yfs RDS(on) VDS=10V, ID=0.5A 430 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge typ 600 V 100 A 100 nA 3.5 850 VDS=10V, ID=0.5A VDS=20V, f=1MHz V mS 8.5 VDS=20V, f=1MHz VDS=20V, f=1MHz Qg Unit max 11 135 pF 40 pF 20 pF VDS=200V, VGS=10V, ID=1.0A 6 nC ns Turn-ON Delay Time td(on) See specified Test Circuit 8 Rise Time tr td(off) See specified Test Circuit 7 ns See specified Test Circuit 17 ns Turn-OFF Delay Time Fall Time tf VSD Diode Forward Voltage See specified Test Circuit 30 IS=1.0A, VGS=0 ns 0.83 1.2 V Marking : K3491 Switching Time Test Circuit 10V 0V VDD=200V VIN ID=0.5A RL=400 VOUT D PW=1s D.C.0.5% VIN G RGS 50 P.G 2SK3491 S ID -- VDS 2.0 1.8 0V 10. 6.0V V 0 20. 1.2 5.5V 1.0 0.8 5.0V 0.6 0.4 VDS=10V Tc= --25C 1.4 Drain Current, ID -- A Drain Current, ID -- A 1.6 1.4 ID -- VGS 1.6 VGS=4.5V 1.2 25C 1.0 75C 0.8 0.6 0.4 0.2 0.2 0 0 0 5 10 15 Drain-to-Source Voltage, VDS -- V 20 IT02865 0 5 10 15 Gate-to-Source Voltage, VGS -- V 20 IT02866 No.6959-2/4 2SK3491 RDS(on) -- VGS 25 0.5A Static Drain-to-Source On-State Resistance, RDS(on) -- Static Drain-to-Source On-State Resistance, RDS(on) -- 0.1A 20 Tc=25C 20 15 ID=1.0A 10 5 18 RDS(on) -- Tc ID=0.5A VGS=10V 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 Gate-to-Source Voltage, VGS -- V 3 2 1 50 100 Forward Transfer Admittance, yfs -- S Cutoff Voltage, VGS(off) -- V 4 0 Switching Time, SW Time -- ns 5C 25C --25C Tc=7 0.2 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V 7 5 Crss 10 7 5 3 2 1.0 5 10 15 20 25 Drain-to-Source Voltage, VSD -- V C C 75 C 25 3 2 0.1 2 3 5 7 2 1.0 3 IT02870 SW Time -- ID VDD=200V VGS=10V 3 2 100 7 5 tf 3 2 td (off) 10 7 5 td(on) tr 3 2 10 7 5 2 3 5 7 2 1.0 3 IT02872 30 35 IT02873 10s 10 0 s 1m s IDP=4A 3 2 1.0 7 5 ID=1A 0.1 7 5 0.01 1.0 10 m 0m s s 10 DC 3 2 3 2 0 --25 Drain Current, ID -- A Drain Current, ID -- A Coss 3 2 150 IT02868 Forward Bias A S O Ciss 100 7 5 Tc= IT02871 f=1MHz 3 2 Ciss, Coss, Crss -- pF 1.4 Ciss, Coss, Crss -- VDS 1000 7 5 1.0 1.0 0.1 0.001 0 125 100 Drain Current, ID -- A VGS=0 0.01 7 5 3 2 75 VDS=10V 1000 7 5 1.0 7 5 3 2 50 2 IT02869 IF -- VSD 0.1 7 5 3 2 25 yfs -- ID 7 0.1 150 Case Temperature, Tc -- C 10 7 5 3 2 0 3 VDS=10V ID=1mA 0 --50 --25 Case Temperature, Tc -- C VGS(off) -- Tc 5 Forward Current, IF -- A 0 --50 20 IT02867 op era tio n Operation in this area is limited by RDS(on). Tc=25C Single pulse 2 3 5 7 10 2 3 5 7 100 2 3 Drain-to-Source Voltage, VDS -- V 5 7 1000 IT02874 No.6959-3/4 2SK3491 PD -- Ta PD -- Tc 30 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 25 20 15 10 5 0 0 20 40 60 80 100 120 Amibient Temperature, Ta -- C 140 160 IT02876 0 20 40 60 80 100 120 140 Case Temperature, Tc -- C 160 IT02875 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 2001. Specifications and information herein are subject to change without notice. PS No.6959-4/4