Copyright & Copy;2002 Shindengen Electric Mfg.Co.,Ltd.
RATINGS
SHINDENGEN
OUTLINE DIMENSIONS
Unit : mm
Case : ITO-3P
Darlington Transistor
15A NPN
2SD2196
(TP15L20)
Absolute Maximum Ratings
Item Symbol Conditions Ratings Unit
Storage Temperature Tstg -55`+150
Junction Temperature Tj +150
Collector to Base Voltage VCBO 200 V
Collector to Emitter Voltage VCEO 200 V
Emitter to Base Voltage VEBO 7V
Collector Current DC IC15 A
Collector Current Peak ICP 22 A
Base Current DC IB1A
Base Current Peak IBP 2A
Total Transistor Dissipation PTTc = 2565 W
Dielectric Strength Vdis Terminals to case AC 1 minute 2kV
Mounting Torque TOR (Recommended torque : 0.5N¥mj0.8 N¥m
Electrical Characteristics (Tc=25)
Item Symbol Conditions Ratings Unit
Collector Cutoff Current ICBO VCB = 200V Max 0.1 mA
ICEO VCE = 200V Max 0.1
Emitter Cutoff Current IEBO VEB = 7V Max 5 mA
DC Current Gain hFE VCE = 3V, IC = 10A Min 1,500
Max 30,000
Collector to Emitter Saturation Voltage VCE(sat) IC = 10A Max 1.5 V
Base to Emitter Saturation Voltage VBE(sat) IB = 30mA Max 2.0 V
Thermal Resistance Æjc Junction to case Max 1.92 /W
Transition Frequency fTVCE = 10V, IC = 1.5A TYP 20 MHz
Turn on Time ton Max 2
IC = 10A
Sto rag e Ti me ts IB1 = IB2 = 30mA Max 12 Ês
RL = 3¶
Fall Time tf VBB2 = 4V Max 5
100
1000
10000
2SD2196
0.1 1 10
V
CE = 3V
hFE
- IC
Tc = 150°C
100°C
50°C
25°C
0°C
−25°C
−55°C
22
Collector Current IC [A]
DC Current Gain hFE
0
0.5
1
1.5
2
2.5
3
2SD2196
0.1 1 10 100 1000
0
0.5
1
1.5
2
2.5
3
0.05 0.50.2 20 5052 200 500 2000 5000
0.02 0.05 0.50.2 20520.0050.002
IC = 0.5A 1.5A 5A 7.5A 10A 15A
Tc = 25°C
Saturation Voltage
22A
IC = 0.5A
1.5A 5A
7.5A 10A 15A
22A
2000
Base Current IB [mA]
Collector-Emitter Voltage VCE
[V]
Base-Emitter Voltage VBE
[V]
0.1
1
10
0 5 10 15 20
2SD2196
IB1 = 0.333IC
IB2 = 0.333IC
VBB2 = 4V
VCC = 50V
Tc = 25°C
ts
ton
tf
Switching Time - IC
Collector Current IC [A]
Switching Time tSW [µs]
Switching Time
0.1
1
10
0 50 100 150 200
2SD2196
IC = 10A
IB1 = 0.033A
IB2 = 0.033A
VBB2 = 4V
Tc = 25°C
RL = 3Ω
ts
ton
tf
Collector Voltage VCC [V]
Switching Time tSW [µs]
0.1
1
10
0 50 100 150
2SD2196
IC = 10A
IB1 = 0.033A
IB2 = 0.033A
VBB2 = 4V
RL = 5Ω
ts
ton
tf
Switching Time - Tc
Case Temperature Tc [°C]
Switching Time tSW [µs]
Transient Thermal Impedance
0.001
0.01
0.1
1
10
2SD2196
10-5 10-4 10-3 10-2 10-1 100101102
0.05 0.50.2 20 5052 200 500 2000 5000
0.02 0.05 0.50.2 20520.0050.002
Time t [s]
Transient Thermal Impedance θjc(t) [°C/W]
Forward Bias SOA
0.01
0.1
1
10
1 10 100
2SD2196
Tc = 25°C
Single Pulse
150µs
1ms10ms
DC
20
200
Collector-Emitter Voltage VCE [V]
Collector Current IC [A]
PT limit
IS/B limit
0
20
40
60
80
100
050 100 150
2SD2196 Collector Current Derating
Collector Current Derating [%]
VCE = fixed
PT limit
IS/B limit
Case Temperature Tc [°C]
0
4
8
12
16
20
24
0 50 100 150 200
2SD2196
IB1 = 0.002IC
IB2 = 0.03A
VBB2 = 5V
Tc = 25°C
Reverse Bias SOA
Collector-Emitter Voltage VCE [V]
Collector Current IC [A]
