SEMICONDUCTOR MPSA27 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR DARLINGTON TRANSISTOR B C FEATURES A Complementary to MPSA77. N E K G J D MAXIMUM RATINGS (Ta=25) UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCES 60 V Emitter-Base Voltage VEBO 10 V Collector Current IC 500 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 Tstg -55150 Storage Temperature Range H F F 1 2 3 C RATING MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M SYMBOL L CHARACTERISTIC DIM A B C D E F G H J K L M N 1. EMITTER 2. BASE 3. COLLECTOR TO-92 ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCE=50V, IE=0 - - 100 nA Emitter Cut-off Current IEBO VEB=10V, IB=0 - - 100 nA Collector-Emitter Breakdown Voltage V(BR)CES IC=100 A, IE=0 60 - - V Collector-Base Breakdown Voltage V(BR)CBO IC=100 A, IE=0 60 - - V hFE(1) * VCE=5V, IC=10mA 10K - - hFE(2) * VCE=5V, IC=100mA 10K - - VCE(sat) * IC=100mA, IB=0.1mA - - 1.5 V VCE=5V, IC=100mA - - 2 V DC Current Gain Collector-Emitter Saturation Voltage VBE * Base-Emitter Voltage * Pulse Test : PW300 S, Duty Cycle2%. 2002. 2. 20 Revision No : 1 1/2 h FE - I C VCE =5V 300K 100K 30K 10K 3K 1K 1 3 10 30 100 300 1K COLLECTOR CURRENT I C (mA) VBE(sat) , VCE(sat) - I C 10 I C /I B =1000 5 3 V BE(sat) 1 V CE(sat) 0.5 0.3 0.1 4 100 300 500 SAFE OPERATING AREA 2K 200 100 5 3 0.4 0.8 1.2 1.6 2.0 BASE-EMITTER VOLTAGE V BE (V) 2.4 100S 10 I C MAX(PULSED) * 1K I C MAX(CONTINUOUS) 500 DC O Tc PE Ta =2 RA =2 5 TI 5 C O C N 300 100 * * S 1m 50 30 COLLECTOR CURRENT I C (mA) VCE =5V 1S COLLECTOR CURRENT I C (mA) 30 COLLECTOR CURRENT I C (mA) I C - V BE 1 0 10 * * SINGLE NONREPETITIVE PULSE Tc=25 C 50 30 VCEO MAX. DC CURRENT GAIN h FE 1000k BASE-EMITTER SATURATION VOLTAGE V BE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) MPSA27 CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 10 1 3 5 10 30 50 100 COLLECTOR-EMITTER VOLTAGE VCE (V) 2002. 2. 20 Revision No : 1 2/2