STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z N-channel 600 V, 0.65 typ., 10 A SuperMESHTM Power MOSFET in I2PAK, D2PAK, TO-220, TO-220FP, TO-247 packages Datasheet - production data Features TAB Type VDSS RDS(on) max STB10NK60Z-1 600 V < 0.75 10 A 115 W STB10NK60ZT4 600 V < 0.75 10 A 115 W STP10NK60Z 600 V < 0.75 10 A 115 W STP10NK60ZFP 600 V < 0.75 10 A STW10NK60Z 600 V < 0.75 10 A 156 W Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Zener-protected Pw ID 3 1 2 TO-220FP I2PAK 3 TAB 1 35 W 2 TO-220 3 3 1 2 1 D2PAK Figure 1. Applications TAB 3 12 TO-247 Internal schematic diagram Switching applications Description These devices are N-channel Zener-protected Power MOSFET developed using STMicroelectronics' SuperMESHTM technology, achieved through optimization of ST's wellestablished strip-based PowerMESHTM layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Table 1. Device summary Order codes Marking Package Packaging STB10NK60Z-1 B10NK60Z IPAK Tube STB10NK60ZT4 B10NK60Z DPAK Tape and reel STP10NK60Z P10NK60Z TO-220 Tube STP10NK60ZFP P10NK60ZFP TO-220FP Tube STW10NK60Z W10NK60Z TO-247 Tube November 2012 This is information on a product in full production. Doc ID 8526 Rev 11 1/24 www.st.com 24 Contents STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ............................. 7 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 2/24 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Doc ID 8526 Rev 11 STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter IPAK DPAK Unit TO-220FP TO-247 TO-220 VDS Drain-source voltage 600 V VGS Gate-source voltage 30 V ID Drain current (continuous) at TC = 25 C ID IDM Drain current (continuous) at TC = 100 C (2) PTOT 10(1) 10 5.7 dv/dt (3) 5.7 5.7 A 36 (1) 36 A 36 Total dissipation at TC = 25 C 115 35 156 W Derating factor 0.92 0.28 1.25 W/C Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink VISO A Drain current (pulsed) Gate-source human body model (R = 1,5 k, C = 100 pF) ESD 10 (1) -- 4 kV 4.5 V/ns 2500 -- V (t=1 s;TC=25 C) Tj Tstg Operating junction temperature Storage temperature -55 to 150 C 1. Limited by maximum junction temperature 2. Pulse width limited by safe operating area 3. ISD < 10A, di/dt < 200A/s, VDD =80% V(BR)DSS Table 3. Thermal data Value Symbol Parameter IPAK DPAK Rthj-case Thermal resistance junction-case max Rthj-pcb Thermal resistance junction-pcb max (when mounted on minimum footprint) Rthj-amb Thermal resistance junction-amb max Doc ID 8526 Rev 11 Unit TO-220 TO-220FP TO-247 1.09 3.6 0.8 35 C/W C/W 62.5 50 C/W 3/24 Electrical ratings Table 4. Symbol 4/24 STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Avalanche characteristics Parameter Max value Unit 9 A IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) EAS Single pulse avalanche energy (starting Tj=25 C, ID=IAR, VDD= 50 V) 300 mJ EAR Repetitive avalanche energy (pulse width limited by Tj max) 3.5 mJ Doc ID 8526 Rev 11 STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z 2 Electrical characteristics Electrical characteristics (Tcase = 25 C unless otherwise specified) Table 5. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown ID = 250 A, VGS= 0 voltage Min. Typ. Max. Unit 600 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 600 V, VDS = 600 V, TC=125 C 1 50 A A IGSS Gate body leakage current (VDS = 0) VGS = 20 V 10 A VGS(th) Gate threshold voltage VDS= VGS, ID = 250 A 3.75 4.5 V RDS(on) Static drain-source onresistance VGS= 10 V, ID= 4.5 A 0.65 0.75 Typ. Max. Unit Table 6. Symbol Dynamic Parameter Test conditions gfs (1) Forward transconductance VDS =15 V, ID = 4.5 A Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f=1 MHz, VGS=0 Equivalent output capacitance Total gate charge Gate-source charge Gate-drain charge Coss eq(2) Qg Qgs Qgd 3 Min. 7.8 S 1370 156 37 pF pF pF VGS=0, VDS =0 to 480 V 90 pF VDD=480 V, ID = 8 A VGS =10 V (see Figure 20) 50 10 25 - 70 nC nC nC 1. Pulsed: pulse duration = 300s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% Doc ID 8526 Rev 11 5/24 Electrical characteristics STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Table 7. Switching times Symbol Parameter td(on) tr Test conditions Turn-on delay time Rise time VDD=300 V, ID=4 A, RG=4.7 , VGS=10 V (see Figure 19) Turn-off delay time Fall time VDD=300 V, ID=4 A, RG=4.7 , VGS=10 V (see Figure 19) Min. Typ. 20 20 td(off) tf Table 8. Parameter ISD Source-drain current Source-drain current (pulsed) ISDM VSD(2) trr Qrr IRRM ns ns - 55 30 ns ns Source drain diode Symbol (1) Max. Unit Test conditions Forward on voltage ISD=10 A, VGS=0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD=8 A, di/dt = 100 A/s, VDD=40 V, Tj=150 C Min. Typ. - Max. Unit 10 36 A A 1.6 V 570 4.3 15 ns C A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300s, duty cycle 1.5% Table 9. Symbol V(BR)GSO Gate-source Zener diode Parameter Test conditions Gate-source breakdown voltage Igs= 1 mA, (ID = 0) Min. Typ. 30 - Max. Unit - V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components 6/24 Doc ID 8526 Rev 11 STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for IPAK, DPAK and TO-220 Figure 3. Thermal impedance for IPAK, DPAK and TO-220 Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 Doc ID 8526 Rev 11 7/24 Electrical characteristics Figure 8. Output characteristics Figure 10. Transconductance STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Figure 9. Transfer characteristics Figure 11. Static drain-source on-resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations 8/24 Doc ID 8526 Rev 11 STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on-resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Maximum avalanche energy vs temperature Figure 18. Normalized BVDSS vs temperature Doc ID 8526 Rev 11 9/24 Test circuits 3 STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit VDD 12V 47k 1k 100nF 3.3 F 2200 RL F VGS IG=CONST VDD 100 Vi=20V=VGMAX VD RG 2200 F D.U.T. D.U.T. VG 2.7k PW 47k 1k PW AM01468v1 AM01469v1 Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100H S 3.3 F B 25 1000 F D VDD 2200 F 3.3 F VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 23. Unclamped inductive waveform AM01471v1 Figure 24. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 10/24 0 Doc ID 8526 Rev 11 10% AM01473v1 STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. Table 10. IPAK (TO-262) mechanical data mm. DIM. min. typ max. A 4.40 4.60 A1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 D 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 E 10 10.40 L 13 14 L1 3.50 3.93 L2 1.27 1.40 Doc ID 8526 Rev 11 11/24 Package mechanical data STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Figure 25. IPAK (TO-262) drawing 0004982_Rev_H 12/24 Doc ID 8526 Rev 11 STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Table 11. Package mechanical data DPAK (TO-263) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 0.4 0 8 Doc ID 8526 Rev 11 13/24 Package mechanical data STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Figure 26. DPAK (TO-263) drawing 0079457_T Figure 27. DPAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 a. All dimensions are in millimeters 14/24 Doc ID 8526 Rev 11 Footprint STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Table 12. Package mechanical data TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 P 3.75 3.85 Q 2.65 2.95 Doc ID 8526 Rev 11 15/24 Package mechanical data STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Figure 28. TO-220 type A drawing 0015988_typeA_Rev_S 16/24 Doc ID 8526 Rev 11 STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Table 13. Package mechanical data TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Doc ID 8526 Rev 11 17/24 Package mechanical data STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Figure 29. TO-220FP drawing 7012510_Rev_K_B 18/24 Doc ID 8526 Rev 11 STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Table 14. Package mechanical data TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 5.60 18.50 P 3.55 3.65 R 4.50 5.50 S 5.30 5.50 Doc ID 8526 Rev 11 5.70 19/24 Package mechanical data STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Figure 30. TO-247 drawing 0075325_G 20/24 Doc ID 8526 Rev 11 STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z 5 Packaging mechanical data Packaging mechanical data Table 15. DPAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 Doc ID 8526 Rev 11 Min. Max. 330 13.2 26.4 30.4 21/24 Packaging mechanical data STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Figure 31. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F W K0 B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 32. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 22/24 Doc ID 8526 Rev 11 STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z 6 Revision history Revision history Table 16. Document revision history Date Revision 29-Sep-2005 6 Inserted ecopack indication 29-Oct-2005 7 New value inserted in Table 6 11-Apr-2006 8 New template 19-Sep-2006 9 Unit changed in Table 5 17-Nov-2008 10 Updated Section 4: Package mechanical data 11 Updated Table 2: Absolute maximum ratings, Table 3: Thermal data, Table 5: On /off states and Table 9: Gate-source Zener diode. Updated Section 4: Package mechanical data and Section 5: Packaging mechanical data. Minor text changes. 15-Nov-2012 Changes Doc ID 8526 Rev 11 23/24 STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. 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