SQM70060EL
www.vishay.com Vishay Siliconix
S16-0653-Rev. A, 18-Apr-16 1Document Number: 67764
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET® power MOSFET
• Package with low thermal resistance
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
PRODUCT SUMMARY
VDS (V) 100
RDS(on) () at VGS = 10 V 0.0059
RDS(on) () at VGS = 4.5 V 0.0080
ID (A) 75
Configuration Single
Package TO-263
D
G
S
N-Channel MOSFET
TO-263
Top View G
D
S
G
D
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current TC = 25 °C a
ID
75
A
TC = 125 °C 67
Continuous Source Current (Diode Conduction) a IS75
Pulsed Drain Current bIDM 180
Single Pulse Avalanche Current L = 0.1 mH IAS 60
Single Pulse Avalanche Energy EAS 180 mJ
Maximum Power Dissipation bTC = 25 °C PD
166 W
TC = 125 °C 55
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB mount c RthJA 40 °C/W
Junction-to-Case (Drain) RthJC 0.9
SQM70060EL
www.vishay.com Vishay Siliconix
S16-0653-Rev. A, 18-Apr-16 2Document Number: 67764
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0, ID = 250 μA 100 - - V
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5
Gate-Source Leakage IGSS V
DS = 0 V, VGS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VGS = 0 V VDS = 100 V - - 1
μA VGS = 0 V VDS = 100 V, TJ = 125 °C - - 50
VGS = 0 V VDS = 100 V, TJ = 175 °C - - 500
On-State Drain Current a I
D(on) V
GS = 10 V VDS 5 V 50 - - A
Drain-Source On-State Resistance a R
DS(on)
VGS = 10 V ID = 30 A - 0.0046 0.0059
VGS = 10 V ID = 30 A, TJ = 125 °C - - 0.0099
VGS = 10 V ID = 30 A, TJ = 175 °C - - 0.0123
VGS = 4.5 V ID = 20 A - 0.0056 0.0080
Forward Transconductance bgfs VDS = 15 V, ID = 25 A - 95 - S
Dynamic b
Input Capacitance Ciss
VGS = 0 V VDS = 25 V, f = 1 MHz
- 4170 5500
pF Output Capacitance Coss - 1935 2600
Reverse Transfer Capacitance Crss - 160 220
Total Gate Charge cQg
VGS = 10 V VDS = 50 V, ID = 50 A
-66100
nC Gate-Source Charge c Qgs -14-
Gate-Drain Charge cQgd -12-
Gate Resistance Rgf = 1 MHz 0.90 1.92 3
Turn-On Delay Time c td(on)
VDD = 50 V, RL = 1.08
ID 50 A, VGEN = 10 V, Rg = 1
-1325
ns
Rise Time c tr -2135
Turn-Off Delay Time c td(off) -3460
Fall Time c tf -1325
Source-Drain Diode Ratings and Characteristics b
Pulsed Current a ISM --180A
Forward Voltage VSD IF = 50 A, VGS = 0 - 0.90 1.5 V
SQM70060EL
www.vishay.com Vishay Siliconix
S16-0653-Rev. A, 18-Apr-16 3Document Number: 67764
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
10
100
1000
10000
0
40
80
120
160
200
0246810
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
2nd line
V
GS
= 10 V thru 5 V
V
GS
= 4 V
V
GS
= 3 V
10
100
1000
10000
0
25
50
75
100
125
0 6 12 18 24 30
Axis Title
1st line
2nd line
2nd line
gfs - Transconductance (S)
ID- Drain Current (A)
2nd line
T
C
= 25 °C
TC=-55 °C
TC= 125 °C
10
100
1000
10000
0
1600
3200
4800
6400
8000
0 20406080100
Axis Title
1st line
2nd line
2nd line
C - Capacitance (pF)
VDS - Drain-to-Source Voltage (V)
2nd line
Crss
Coss
Ciss
10
100
1000
10000
0
35
70
105
140
175
0246810
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VGS - Gate-to-Source Voltage (V)
2nd line
T
C
= 25 °C
T
C
=-55 °C
T
C
= 125 °C
10
100
1000
10000
0
0.003
0.006
0.009
0.012
0.015
0 20406080100120
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
ID- Drain Current (A)
2nd line
VGS = 4.5 V
VGS = 10 V
10
100
1000
10000
0
2
4
6
8
10
0 20406080100
Axis Title
1st line
2nd line
2nd line
VGS - Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
2nd line
ID= 50 A
VDS = 50 V
SQM70060EL
www.vishay.com Vishay Siliconix
S16-0653-Rev. A, 18-Apr-16 4Document Number: 67764
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Source Drain Diode Forward Voltage
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
10
100
1000
10000
0.5
0.9
1.3
1.7
2.1
2.5
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
TJ- Junction Temperature (°C)
2nd line
VGS = 10 V
VGS = 4.5 V
ID= 30 A
10
100
1000
10000
0.00
0.01
0.02
0.03
0.04
0.05
0246810
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
2nd line
TJ= 25 °C
TJ= 150 °C
10
100
1000
10000
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2
Axis Title
1st line
2nd line
2nd line
IS- Source Current (A)
VSD - Source-to-Drain Voltage (V)
2nd line
TJ= 150 °C
TJ= 25 °C
10
100
1000
10000
-1.5
-1.1
-0.7
-0.3
0.1
0.5
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
VGS(th) Variance (V)
TJ- Temperature (°C)
2nd line
ID= 5 mA
ID= 250 µA
10
100
1000
10000
105
109
113
117
121
125
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
TJ- Junction Temperature (°C)
2nd line
I
D
= 1 mA
SQM70060EL
www.vishay.com Vishay Siliconix
S16-0653-Rev. A, 18-Apr-16 5Document Number: 67764
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
100
1000
10000
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100 1000
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified
IDM limited
Limited by RDS(on) (1)
TC= 25 °C
Single pulse BVDSS limited
100 ms, 1 s, 10 s, DC
10 ms
1 ms
100 µs
IDlimited
10-4 10-3 10-2 10-1 1 10 100 1000
1
0.01
0.001
0.1
0.0001
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
SQM70060EL
www.vishay.com Vishay Siliconix
S16-0653-Rev. A, 18-Apr-16 6Document Number: 67764
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67764.
Square Wave Pulse Duration (s)
2
1
0.1
0.01
10-4 10-3 10-2 10-1 10
Normalized Effective Transient
Thermal Impedance
0.2
0.1
Duty cycle = 0.5
Single pulse
0.05
0.02
1
Package Information
www.vishay.com Vishay Siliconix
Revison: 30-Sep-13 1Document Number: 71198
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-263 (D2PAK): 3-LEAD
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8 mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
-A-
-B-
D1 D4
AA
eb2
b
EAc2
c
L2
D
L3
L
Detail “A”
E1
E2
K
E3
D2
D3
6
0.010 M A M
2 PL
DETAIL A (ROTATED 90°)
SECTION A-A
0° - 5°
L1
L4
M
c1
c
b1
b
INCHES MILLIMETERS
DIM. MIN. MAX. MIN. MAX.
A 0.160 0.190 4.064 4.826
b 0.020 0.039 0.508 0.990
b1 0.020 0.035 0.508 0.889
b2 0.045 0.055 1.143 1.397
c* Thin lead 0.013 0.018 0.330 0.457
Thick lead 0.023 0.028 0.584 0.711
c1 Thin lead 0.013 0.017 0.330 0.431
Thick lead 0.023 0.027 0.584 0.685
c2 0.045 0.055 1.143 1.397
D 0.340 0.380 8.636 9.652
D1 0.220 0.240 5.588 6.096
D2 0.038 0.042 0.965 1.067
D3 0.045 0.055 1.143 1.397
D4 0.044 0.052 1.118 1.321
E 0.380 0.410 9.652 10.414
E1 0.245 - 6.223 -
E2 0.355 0.375 9.017 9.525
E3 0.072 0.078 1.829 1.981
e 0.100 BSC 2.54 BSC
K 0.045 0.055 1.143 1.397
L 0.575 0.625 14.605 15.875
L1 0.090 0.110 2.286 2.794
L2 0.040 0.055 1.016 1.397
L3 0.050 0.070 1.270 1.778
L4 0.010 BSC 0.254 BSC
M - 0.002 - 0.050
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
AN826
Vishay Siliconix
Document Number: 73397
11-Apr-05
www.vishay.com
1
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
0.635
(16.129)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.420
(10.668)
0.355
(9.017)
0.145
(3.683)
0.135
(3.429)
0.200
(5.080)
0.050
(1.257)
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Revision: 01-Jan-2021 1Document Number: 91000
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