BAW56
BAW56, Rev. C
Small Signal Diode
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
BAW56
2001 Fairchild Semiconductor Corporation
Thermal Characteristics
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VRRM Maximum Repetitive Reverse Voltage 85 V
IF(AV) Average Rectified Forward Current 200 mA
IFSM Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
2.0
A
A
Tstg Storage Temperature Range -55 to +150 °C
TJ Operating Junction Temperature 150 °C
Symbol
Parameter
Value
Units
PD Power Dissipation 350 mW
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
12
3
A1
12
3
Connection Diagram
3
1
2
SOT-23
Symbol
Parameter Test Conditions Min
Max
Units
VR Breakdown Voltage IR = 5.0 µA 85 V
VF Forward Voltage IF = 1.0 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
715
855
1.0
1.25
mV
mV
V
V
IR Reverse Current VR = 70 V
VR = 25 V, TA = 150°C
VR = 70 V, TA = 150°C 2.5
30
50
µA
µA
µA
CT Total Capacitance VR = 0, f = 1.0 MHz 2.0 pF
trr Reverse Recovery Time IF = IR = 10 mA, IRR = 1.0 mA,
RL = 100 Ω 6.0 ns
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OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
FAST
FASTr™
FRFET™
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GTO™
HiSeC™
ISOPLANAR™
LittleFET™
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MicroPak™
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Rev. H4
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VCX™