AT-41435
Up to 6 GHz Low Noise Silicon Bipolar Transistor
Data Sheet
Features
• Low Noise Figure:
1.7 dB Typical at 2.0 GHz
3.0 dB Typical at 4.0 GHz
• High Associated Gain:
14.0 dB Typical at 2.0 GHz
10.0 dB Typical at 4.0 GHz
• High Gain-Bandwidth Product: 8.0 GHz Typical fT
• Cost Eective Ceramic Microstrip Package
Description
Avago’s AT-41435 is a general purpose NPN bipolar tran-
sistor that oers excellent high frequency performance.
The AT-41435 is housed in a cost eective surface mount
100 mil micro-X package. The 4 micron emitter-to-emitter
pitch enables this transistor to be used in many dierent
functions. The 14 emitter nger interdigitated geometry
yields an intermediate sized transistor with impedances
that are easy to match for low noise and moderate power
applications. This device is designed for use in low noise,
wideband amplier, mixer and oscillator applications in the
VHF, UHF, and microwave frequencies. An optimum noise
match near 50Ω at 1 GHz, makes this device easy to use as
a low noise amplier.
The AT-41435 bipolar transistor is fabricated using Avago’s
10 GHz fT Self-Aligned-Transistor (SAT) process. The die is
nitride passivated for surface protection. Excellent device
uniformity, performance and reliability are produced by the
use of ion-implantation, self-alignment techniques, and gold
metalization in the fabrication of this device.
35 micro-X Package
2
AT-41435 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum[1]
VEBO Emitter-Base Voltage V 1.5
VCBO Collector-Base Voltage V 20
VCEO Collector-Emitter Voltage V 12
IC Collector Current mA 60
PT Power Dissipation[2,3] mW 500
Tj Junction Temperature °C 150
TSTG Storage Temperature[4] °C -65 to 150
Thermal Resistance[2,5]:
θjc = 200°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. Tcase = 25°C.
3. Derate at 5 mW/°C for Tc > 100°C.
4. Storage above +150°C may tarnish the leads of this package making it dicult to
solder into a circuit.
5. The small spot size of this technique results in a higher, though more accurate
determination of θjc than do alternate methods. See MEASUREMENTS section
“Thermal Resistance” for more information.
Electrical Specications, TA = 25°C
Symbol Parameters and Test Conditions Units Min. Typ. Max.
|S21E|2 Insertion Power Gain; VCE = 8 V, IC = 25 mA f = 2.0 GHz dB 11.5
f = 4.0 GHz 6.0
P1 dB Power Output @ 1 dB Gain Compression f = 2.0 GHz dBm 19.0
VCE = 8 V, IC = 25 mA f = 4.0 GHz 18.5
G1 dB 1 dB Compressed Gain; VCE = 8 V, IC = 25 mA f = 2.0 GHz dB 14.0
f = 4.0 GHz 9.5
NFO Optimum Noise Figure: VCE = 8 V, IC = 10 mA f = 1.0 GHz dB 1.3
f = 2.0 GHz 1.7 2.0
f = 4.0 GHz 3.0
GA Gain @ NFO; VCE = 8 V, IC = 10 mA f = 1.0 GHz dB 18.5
f = 2.0 GHz 13.0 14.0
f = 4.0 GHz 10.0
fT Gain Bandwidth Product: VCE = 8 V, IC = 25 mA GHz 8.0
hFE Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA — 30 150 270
ICBO Collector Cuto Current; VCB = 8 V µA 0.2
IEBO Emitter Cuto Current; VEB = 1 V µA 1.0
CCB Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz pF 0.2
Note:
1. For this test, the emitter is grounded.
3
AT-41435 Typical Performance, TA = 25°C
FREQUENCY (GHz)
Figure 1. Noise Figure and Associated
Gain vs. Frequency.
VCE = 8 V, IC = 10�mA.
GAIN (dB)
IC (mA)
Figure 3. Optimum Noise Figure and
Associated Gain vs. Collector Current
and Collector Voltage. f = 2.0 GHz.
GAIN (dB)
0 10 20 30 40
FREQUENCY (GHz)
Figure 5. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VCE = 8 V, IC = 25 mA.
GAIN (dB)
0.1 0.50.3 1.0 3.0 6.0
24
21
18
15
12
9
6
3
0
8
6
4
2
0
NF (dB)
4
3
2
1
NFO (dB)
0.5 2.01.0 3.0 4.0 5.0
16
15
14
13
12
GA
NFO
NF50
IC (mA)
Figure 6. Insertion Power Gain vs.
Collector Current and Frequency.
VCE = 8 V.
20
16
12
8
4
0
|S21E|2 GAIN (dB)
0 10 20 30 40
2.0 GHz
4.0 GHz
40
35
30
25
20
15
10
5
0
MSG
MAG
|S21E|2
1.0 GHz
10 V
4 V
GA
NFO
6 V
10 V
4 V
6 V
IC (mA)
Figure 2. Output Power and 1 dB
Compressed Gain vs. Collector Current
and Frequency. VCE = 8 V.
24
20
16
12
8
4
G1 dB (dB) P1 dB (dBm)
0 10 20 30 40
P1dB
G1dB
2.0 GHz
2.0 GHz
4.0 GHz
4.0 GHz
Figure 4. Optimum Noise Figure and
Associated Gain vs. Collector Current
and Frequency. VCE = 8 V.
IC (mA)
GAIN (dB)
0 10 20 30 40
6
4
2
0
NFO (dB)
16
14
12
10
8
GA
NFO
2.0 GHz
2.0 GHz
4.0 GHz
4.0 GHz
4
AT-41435 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC = 10 mA
Freq. S11 S21 S12 S22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
0.1 .80 -32 28.0 24.99 157 -39.2 .011 82 .93 -12
0.5 .50 -110 21.8 12.30 108 -29.6 .033 52 .61 -28
1.0 .40 -152 16.6 6.73 85 -26.2 .049 56 .51 -30
1.5 .38 -176 13.3 4.63 71 -24.0 .063 59 .48 -32
2.0 .39 166 11.0 3.54 60 -21.9 .080 58 .46 -37
2.5 .41 156 9.3 2.91 53 -20.4 .095 61 .44 -40
3.0 .44 145 7.9 2.47 43 -18.8 .115 61 .43 -48
3.5 .46 137 6.7 2.15 33 -17.5 .133 58 .43 -58
4.0 .46 127 5.6 1.91 23 -16.0 .153 53 .45 -68
4.5 .47 116 4.7 1.72 13 -15.0 .178 50 .46 -75
5.0 .49 104 4.0 1.58 3 -13.9 .201 47 .48 -82
5.5 .52 91 3.3 1.45 -7 -13.0 .224 40 .47 -89
6.0 .59 81 2.5 1.34 -17 -12.1 .247 36 .43 -101
AT-41435 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC = 25 mA
Freq. S11 S21 S12 S22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
0.1 .63 -50 31.8 39.08 146 -40.0 .010 83 .84 -18
0.5 .39 -137 22.9 13.97 99 -31.4 .027 60 .50 -26
1.0 .36 -171 17.2 7.28 80 -27.1 .044 67 .45 -26
1.5 .36 171 13.9 4.94 68 -23.5 .067 66 .43 -30
2.0 .38 156 11.5 3.76 58 -21.6 .083 63 .41 -34
2.5 .40 149 9.8 3.08 52 -19.6 .105 63 .39 -38
3.0 .43 140 8.3 2.61 43 -18.3 .122 64 .38 -47
3.5 .45 132 7.2 2.28 33 -16.8 .144 59 .39 -57
4.0 .46 122 6.1 2.02 23 -15.6 .165 55 .40 -67
4.5 .46 112 5.2 1.82 14 -14.6 .185 50 .42 -75
5.0 .47 101 4.4 1.66 4 -13.7 .207 45 .43 -81
5.5 .51 89 3.7 1.54 -5 -12.6 .233 39 .42 -89
6.0 .58 79 3.0 1.41 -15 -11.8 .257 33 .37 -101
A model for this device is available in the DEVICE MODELS section.
AT-41435 Noise Parameters:
VCE = 8 V, IC = 10 mA
Freq. NFO Γopt
GHz dB Mag Ang RN/50
0.1 1.2 .12 3 0.17
0.5 1.2 .10 14 0.17
1.0 1.3 .05 28 0.17
2.0 1.7 .30 -154 0.16
4.0 3.0 .54 -118 0.35
35 micro-X Package Dimensions
Ordering Information
Part Numbers No. of Devices
AT-41435G 100
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries.
Data subject to change. Copyright © 2005-2008 Avago Technologies Limited. All rights reserved.
Obsoletes 5989-2647EN
AV02-0298EN - April 29, 2008
1 3
4
2
EMITTER
DIA.
EMITTER
COLLECTOR
BASE
.085
2.15
016
.083
2.11
.020
.508
.100
2.54
.455 ± .030
11.54 ± .75
.006 ± .002
.15 ± .05
Notes:
(unless otherwise specified)
1. Dimensions are in
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
mm
.022
.56
.057 ± .010
1.45 ± .25
