© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 11 1Publication Order Number:
2N4921/D
2N4921, 2N4922, 2N4923
2N4923 is a Preferred Device
Medium−Power Plastic
NPN Silicon Transistors
These high−performance plastic devices are designed for driver
circuits, switching, and amplifier applications.
Features
•Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A
•Excellent Power Dissipation Due to Thermopad Construction −
PD = 30 W @ TC = 25_C
•Excellent Safe Operating Area
•Gain Specified to IC = 1.0 A
•Complement to PNP 2N4918, 2N4919, 2N4920
•Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Voltage 2N4921
2N4922
2N4923
ÎÎÎ
Î
Î
Î
ÎÎÎ
VCEO
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
40
60
80
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Voltage 2N4921
2N4922
2N4923
ÎÎÎ
Î
Î
Î
ÎÎÎ
VCB
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
40
60
80
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Base Voltage
ÎÎÎ
ÎÎÎ
VEB
ÎÎÎÎ
ÎÎÎÎ
5.0
ÎÎÎÎ
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current − Continuous (Note 1)
ÎÎÎ
Î
Î
Î
ÎÎÎ
IC
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
1.0
3.0
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current − Continuous
ÎÎÎ
ÎÎÎ
IB
ÎÎÎÎ
ÎÎÎÎ
1.0
ÎÎÎÎ
ÎÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ TC = 25_C
Derate above 25_C
ÎÎÎ
ÎÎÎ
PD
ÎÎÎÎ
ÎÎÎÎ
30
0.24
ÎÎÎÎ
ÎÎÎÎ
W
mW/_C
ÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
Temperature Range
ÎÎÎ
Î
Î
Î
ÎÎÎ
TJ, Tstg
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
–65 to +150
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
_C
THERMAL CHARACTERISTICS (Note 2)
Characteristic Symbol Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction−to−Case
ÎÎÎ
ÎÎÎ
qJC
ÎÎÎÎ
ÎÎÎÎ
4.16
ÎÎÎÎ
ÎÎÎÎ
_C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. The 1.0 A maximum IC value i s b ased u pon J EDEC c urrent g ain r equirements.
The 3.0 A maximum value is based upon actual current handling capability of
the device (see Figures 5 and 6).
2. Recommend use of thermal compound for lowest thermal resistance.
*Indicates JEDEC Registered Data.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
1.0 AMPERE
GENERAL PURPOSE
POWER TRANSISTORS
40−80 VOLTS, 30 WATTS
http://onsemi.com
TO−225
CASE 77
STYLE 1
21
3
MARKING DIAGRAM
YWW
2
N492xG
Y = Year
WW = Work Week
2N492x = Device Code
x = 1, 2, or 3
G = Pb−Free Package
1
Preferred devices are recommended choices for future use
and best overall value.
Device Package Shipping
ORDERING INFORMATION
2N4921 TO−225 500 Units / Box
2N4921G TO−225
(Pb−Free) 500 Units / Box
2N4922 TO−225 500 Units / Box
2N4922G TO−225
(Pb−Free) 500 Units / Box
2N4923 TO−225 500 Units / Box
2N4923G TO−225
(Pb−Free) 500 Units / Box
2N4921, 2N4922, 2N4923
http://onsemi.com
2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
Min
ÎÎÎ
ÎÎÎ
Max
ÎÎÎÎ
ÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 0.1 Adc, IB = 0) 2N4921
2N4922
2N4923
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VCEO(sus)
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
40
60
80
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
−
−
−
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Collector Cutoff Current
(VCE = 20 Vdc, IB = 0) 2N4921
(VCE = 30 Vdc, IB = 0) 2N4922
(VCE = 40 Vdc, IB = 0) 2N4923
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ICEO
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
−
−
−
ÎÎÎ
Î
Î
Î
Î
Î
Î
0.5
0.5
0.5
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = Rated VCEO, VEB(off) = 1.5 Vdc)
(VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 125_C
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICEX
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
−
−
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
0.1
0.5
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCB = Rated VCB, IE = 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
ICBO
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
0.1
ÎÎÎÎ
ÎÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
IEBO
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
−
ÎÎÎ
Î
Î
Î
ÎÎÎ
1.0
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain (Note 3)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
hFE
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
40
30
10
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
−
150
−
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage (Note 3)
(IC = 1.0 Adc, IB = 0.1 Adc)
ÎÎÎÎÎ
ÎÎÎÎÎ
VCE(sat)
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
0.6
ÎÎÎÎ
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter Saturation Voltage (Note 3)
(IC = 1.0 Adc, IB = 0.1 Adc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VBE(sat)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
−
ÎÎÎ
Î
Î
Î
ÎÎÎ
1.3
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter On Voltage (Note 3)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VBE(on)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
−
ÎÎÎ
Î
Î
Î
ÎÎÎ
1.3
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SMALL−SIGNAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current−Gain − Bandwidth Product
(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
fT
ÎÎÎÎ
ÎÎÎÎ
3.0
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
MHz
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 100 kHz)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
Cob
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
−
ÎÎÎ
Î
Î
Î
ÎÎÎ
100
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small−Signal Current Gain
(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
hfe
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
25
ÎÎÎ
Î
Î
Î
ÎÎÎ
−
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
−
3. Pulse Test: PW ≈ 300 ms, Duty Cycle ≈ 2.0%.
*Indicates JEDEC Registered Data.
2N4921, 2N4922, 2N4923
http://onsemi.com
3
40
30
20
10
025 50 75 100 125 150
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.
Figure 2. Switching Time Equivalent Circuit
5.0
10
Figure 3. Turn−On Time
IC, COLLECTOR CURRENT (mA)
VCC = 30 V
IC/IB = 20
t, TIME (s)μ
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.05 20 30 50 70 100 200 700 1000
VCC
SCOPE
RB
Cjd<<Ceb
−4.0 V
t1 ≤ 15 ns
100 < t2 ≤ 500 ms
t3 ≤15 ns
DUTY CYCLE ≈ 2.0%
Vin
RC
0.07
3.0 IC/IB = 10, UNLESS NOTED
VCC = 30 V
VCC = 60 V
VBE(off) = 2.0 V
VCC = 30 V
VBE(off) = 0
300 500
tr
td
t1
VBE(off)
APPROX 9.0 V
TURN−ON PULSE
t3
t2
Vin
APPROX
+11 V
Vin
TURN−OFF PULSE
APPROX
+11 V
RB and RC varied to
obtain desired
current levels
TJ = 25°C
TJ = 150°C
VCC = 60 V
2N4921, 2N4922, 2N4923
http://onsemi.com
4
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.03
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 1000500
qJC(t) = r(t) qJC
qJC = 4.16°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.01
0.1
SINGLE PULSE
10
1.0
Figure 5. Active−Region Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
5.0
2.0
1.0
0.5
0.1 2.0 3.0 5.0 10 20 30 50 10070
0.2
IC, COLLECTOR CURRENT (AMP)
TJ = 150°Cdc
5.0 ms
7.0
PULSE CURVES APPLY BELOW
RATED VCEO
SECOND BREAKDOWN
LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
7.0
3.0
0.7
0.3
1.0 ms 100 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I C − V CE
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
TJ(pk) v 150_C. At high case temperatures, thermal
limitations will reduce the power that can be handled to
values less than the limitations imposed by second
breakdown.
tμ
s, STORAGE TIME (s)
′
5.0
10
Figure 6. Storage Time
IC, COLLECTOR CURRENT (mA)
2.0
1.0
0.5
0.3
0.2
0.1
0.05 20 30 50 70 500 700 1000
0.07
100
3.0
0.7
200 300
TJ = 25°C
TJ = 150°C
IC/IB = 10 IC/IB = 20
5.0
10
Figure 7. Fall Time
IC, COLLECTOR CURRENT (mA)
2.0
1.0
0.5
0.3
0.2
0.1
0.05 20 30 50 70 500 700 1000
0.07
100
3.0
0.7
200 300
TJ = 25°C
TJ = 150°C
IC/IB = 20
IC/IB = 10
IC/IB = 20
tμ
f, FALL TIME (s)
IB1 = IB2
ts′ = ts − 1/8 tf
VCC = 30 V
IB1 = IB2
2N4921, 2N4922, 2N4923
http://onsemi.com
5
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS
)
RBE, EXTERNAL BASE−EMITTER RESISTANCE (OHMS)
1000
2.0
Figure 8. Current Gain
IC, COLLECTOR CURRENT (mA)
10 3.0 5.0 10 20 30 200 300 500 2000
500
200
100
70
Figure 9. Collector Saturation Region
1.0
0.2
IB, BASE CURRENT (mA)
00.3 0.5 1.0 2.0 5.0 10 20 50 200
0.8
0.6
0.4
0.2
IC = 0.1 A
TJ = 25°C
0.25 A 0.5 A 1.0 A
700
300
hFE, DC CURRENT GAIN
TJ = 150°C
25°C
−55 °C
VCE = 1.0 V
50
30
20
50 100 1000 3.0 30 100
108
0
Figure 10. Effects of Base−Emitter Resistance
TJ, JUNCTION TEMPERATURE (°C)
30 60 90 120 150
107
105
104
103
VCE = 30 VIC = 10 x ICES
IC = 2 x ICES
IC ≈ICES
ICES VALUES
OBTAINED FROM
FIGURE 12
106
1.5
2.0
IC, COLLECTOR CURRENT (mA)
5.0 10 20 30 50 100 200 300 2000
1.2
0.9
0.6
0.3
0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VOLTAGE (VOLTS)
Figure 11. “On” Voltage
3.0 500 1000
VBE @ VCE = 2.0 V
104
−0.2
Figure 12. Collector Cut−Off Region
VBE, BASE−EMITTER VOLTAGE (VOLTS)
103
102
10−1
, COLLECTOR CURRENT (A)μIC
−0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5
VCE = 30 V
TJ = 150°C
100°C
25°C
REVERSE FORWARD
IC = ICES
+2.5
2.0
Figure 13. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
3.0 5.0 10 20 30 50 100 200 2000
−55 °C to +100°C
TEMPERATURE COEFFICIENTS (mV/ C)°
+2.0
+1.5
+0.5
0
−0.5
−1.0
−1.5
−2.0
−2.5
qVB FOR VBE
TJ = 100°C to 150°C
*APPLIES FOR IC/IB ≤hFE@VCE +1.0V
2
+1.0
300 500 1000
101
100
10− 2
*qVC FOR VCE(sat)
2N4921, 2N4922, 2N4923
http://onsemi.com
6
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
077−09.
−B−
−A− M
K
FC
Q
H
V
G
S
D
JR
U
132
2 PL
M
A
M
0.25 (0.010) B M
M
A
M
0.25 (0.010) B M
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.425 0.435 10.80 11.04
B0.295 0.305 7.50 7.74
C0.095 0.105 2.42 2.66
D0.020 0.026 0.51 0.66
F0.115 0.130 2.93 3.30
G0.094 BSC 2.39 BSC
H0.050 0.095 1.27 2.41
J0.015 0.025 0.39 0.63
K0.575 0.655 14.61 16.63
M5 TYP 5 TYP
Q0.148 0.158 3.76 4.01
R0.045 0.065 1.15 1.65
S0.025 0.035 0.64 0.88
U0.145 0.155 3.69 3.93
V0.040 −−− 1.02 −−−
__
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
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For additional information, please contact your
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